138 resultados para lithography


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X-2-y(2)SiO(5):A (A = Eu3+, Tb3+, Ce3+) phosphor films and their patterning were fabricated by a sol-gel process combined with a soft lithography. X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), atomic force microscopy (AFM), scanning electron microscopy (SEM) optical microscopy and photoluminescence (PL) were used to characterize the resulting films. The results of XRD indicated that the films began to crystallize at 900 degreesC with X-1-Y2SiO5, which transformed completely to X-2-Y2SiO5 at 1250 degreesC. Patterned thin films with different band widths (5 pin spaced by 5 pm and 16 pm spaced by 24 pm) were obtained by a soft lithography technique (micromoulding in capillaries, MIMIC). The SEM and AFM study revealed that the nonpattemed phosphor films were uniform and crack free, and the films mainly consisted of closely packed grains with an average size of 350 run. The doped rare earth ions (A) showed their characteristic emissions in X-2-Y2SiO5 phosphor films, i.e., D-5(0)-F-7(J) (J = 0, 1, 2,3,4) for Eu3+, D-5(3), (4)-F-7(J) (J = 6, 5, 4, 3) for Tb3+ and 5d (D-2)-4f (F-2(2/5),(2/7)) for Ce3+, respectively. The optimum doping concentrations for EU3+, Tb3+ were determined to be 13 and 8 mol% of Y3+ in X-2-Y2SiO5 films, respectively.

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Scanning probe lithography (SPL), employing the tip of an atomic force microscope to mechanically pattern various materials in nanoscale region has provided a simple but significant method for making nanostructures. We use this technique for the lithography of several kinds of substrate surfaces. The tip performance has been found to be a crucial factor in the lithographic process. Four types of cantilevers are employed in nanolithography, including standard silicon nitride (DNP), tapping mode(TM) etched silicon (TESP(W)), uncoated silicon cantilever (NSC21/50) and conductive platinum/iridium-coated probe. Results demonstrate that tips with smaller spring constants can not be used for physically scribing and nanomanipulating in our experiment. The possible mechanism of our experiment is discussed.

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SOFT CONTACT LAMINATION; LIGHT-EMITTING DEVICES; LIFT-OFF; FABRICATION; TRANSISTORS; DIODES; FILMS; STAMP

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A modified tapping mode of the atomic force microscope (AFM) was introduced for manipulation, dissection, and lithography. By sufficiently decreasing the amplitude of AFM tip in the normal tapping mode and adjusting the setpoint, the tip-sample interaction can be efficiently controlled. This modified tapping mode has some characteristics of the AFM contact mode and can be used to manipulate nanoparticles, dissect biomolecules, and make lithographs on various surfaces. This method did not need any additional equipment and it can be applied to any AFM system.

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Perovskite-type organic/inorganic hybrid layered compound (C6H5C2H4NH3)(2)PbI4 was synthesized. The patterning Of (C6H5C2H4NH3)(2)PbI4 thin films on silicon substrate was realized by the micromolding in capillaries (MIMIC) process, a kind of soft lithography. Bright green luminescent stripes with different widths (50, 15, 0.8 mum) have been obtained. The structure and optical properties Of (C6H5C2H4NH3)(2)PbI4 films were characterized by X-ray diffraction (XRD), UV/Vis absorption and photoluminescence excitation and emission spectra, respectively. It is shown that the organic-inorganic layered (C6H5C2H4NH3)(2)PbI4 film was c-axis oriented, paralleling to the substrate plane. Green exciton emission at 525 nm was observed in the film, and the explanations for it were given.

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Silicate oxyapatite La-9.33 (SiO6)(4)O-2:A (A = Eu3+, Tb3+ and/or Ce3+) phosphor films and their patterning were fabricated by a sol-gel process combined with soft lithography. X-ray diffraction (XRD), Fourier transform infrared spectroscopy, atomic force microscopy, optical microscopy and photoluminescence spectra, as well as lifetimes, were used to characterize the resulting films. The results of XRD indicated that the films began to crystallize at 800degreesC and the crystallinity increased with the increase in annealing temperatures. Transparent nonpatterned phosphor films were uniform and crack-free, which mainly consisted of rodlike grains with a size between 150 and 210 nm. Patterned thin films with different bandwidths (20, 50 mum) were obtained by the micromoulding in capillaries technique. The doped rare earth ions (Eu3+, Tb3+ and Ce3+) showed their characteristic emission in crystalline La-9.33(SiO6)(4)O-2 phosphor films, i.e. Eu3+ D-5(0)-F-7(J) (J = 0, 1, 2, 3, 4), Tb3+ D-5(3,4)-F-7(J) (J = 3, 4, 5, 6) and Ce3+ 5d (D-2)-4f (F-2(2/5), F-2(2/7)) emissions, respectively. Both the lifetimes and PL intensity of the Eu3+, Tb3+ ions increased with increasing annealing temperature from 800 to 1100 degreesC, and the optimum concentrations for Eu3+, Tb3+ were determined to be 9 and 7 mol% of La3+ in La-9.33(SiO6)(4)O-2 films, respectively. An energy transfer from Ce3+ to Tb3+ was observed in the La-9.33(SiO6)(4)O-2:Ce, Tb phosphor films, and the energy transfer efficiency was estimated as a function of Tb3+ concentration.

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Nanocrystalline Y2O3:Eu3+ phosphor films and their patterning were fabricated by a Pechini sol-gel process combined with a soft lithography. X-ray diffraction (XRD), thermogravimetric and differential thermal analysis (TG-DTA), atomic force microscopy (AFM), optical microscopy, UV/vis transmission and photoluminescence (PL) spectra as well as lifetimes were used to characterize the resulting films. The results of XRD indicated that the films began to crystallize at 500 degreesC and the crystallinity increased with the elevation of annealing temperatures. Uniform and crack free non-patterned phosphor films were obtained, which mainly consisted of grains with an average size of 70 nm. Using micro-molding in capillaries technique, we obtained homogeneous and defects-free patterned gel and crystalline phosphor films with different stripe widths (5, 10, 20 and 50 mum). Significant shrinkage (50%) was observed in the patterned films during the heat treatment process. The doped Eu3+ showed its characteristic emission in crystalline Y2O3 phosphor films due to an efficient energy transfer from Y2O3 host to them. Both the lifetimes and PL intensity of the Eu3+ increased with increasing the annealing temperature from 500 to 900 degreesC, and the optimum concentrations for Eu3+ were determined to be 5 mol%.

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Nanocrystalline Gd2O3:A (A = Eu3+, Dy3+, Sm3+, Er3+) phosphor films and their patterning were fabricated by a Pechini sol-gel process combined with a soft lithography. X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM) and optical microscopy, UV/vis transmission and photoluminescence (PL) spectra as well as lifetimes were used to characterize the resulting films. The results of XRD indicated that the films began to crystallize at 500 degreesC and that the crystallinity increased with the elevation of annealing temperatures. Uniform and crack free non-patterned phosphor films were obtained by optimizing the composition of the coating sol, which mainly consisted of grains with an average size of 70 nm and a thickness of 550 nm. Using micro-molding in capillaries technique, we obtained homogeneous and defects-free patterned gel and crystalline phosphor films with different stripe widths (5, 10, 20 and 50 mum). Significant shrinkage (50%) was observed in the patterned films during the heat treatment process. The doped rare earth ions (A) showed their characteristic emission in crystalline Gd2O3 phosphor films due to an efficient energy transfer from Gd2O3 host to them. Both the lifetimes and PL intensity of the rare earth ions increased with increasing the annealing temperature from 500 to 900 degreesC, and the optimum concentrations for Eu3+, Dy3+, sm(3+), Er3+ were determined to be 5, 0.25, 1 and 1.5 mol% of Gd3+ in Gd2O3 films, respectively.

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Rhodamine B (RB)-doped organic-inorganic silica films and their patterning were fabricated by a sol-gel process combined with a soft lithography. The resulted film samples were characterized by atomic force microscope (AFM), optical microscope and UV/Vis absorption and photoluminescence excitation and emission spectra. The effects of the concentration of the RB dye and heat treatment temperature on the optical properties of the hybrid silica films have been studied. Four kinds of patterning structures with film line widths of 5, 10, 20 and 50 mum have been obtained by micromolding in capillaries by a soft lithography technique. The RB-doped hybrid silica films present a red color, with an excitation and emission bands around 564 and 585 mum, respectively. With increasing the RB concentration, the emission intensity of the RB-doped hybrid silica films increases and the emission maximum presents a red shift. The emission intensity of the films decreases with increasing the heat treatment temperatures.

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In this article we present a mechanical pattern transfer process where a thermosetting polymer mold instead of a metal, dielectric, ceramic, or semiconductor master made by conventional lithography was used as the master to pattern thermoplastic polymers in hot embossing lithography. The thermosetting polymer mold was fabricated by a soft lithography strategy, microtransfer molding. For comparison, the thermosetting polymer mold and the silicon wafer master were both used to imprint the thermoplastic polymer, polymethylmethacrylate. Replication of the thermosetting polymer mold and the silicon wafer master was of the same quality. This indicates that the thermosetting polymer mold could be used for thermoplastic polymer patterning in hot embossing lithography with high fidelity.

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软刻蚀是一类基于自组装和复制模塑等原理的非光刻微米和纳米加工方法。

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Nanocrystalline YVO4:A (A = Eu3+, Dy3+, Sm3+, Er3+) phosphor films and their patterning were fabricated by a Pechini sol-gel process combined with soft lithography. X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), thermogravimetric and differential thermal analysis (TG-DTA), atomic force microscopy (AFM) and optical microscopy, UV/vis transmission and absorption spectra, photoluminescence (PL) spectra, and lifetimes were used to characterize the resulting films. The results of XRD indicated that the films began to crystallize at 400 degreesC and the crystallinity increased with the increase of annealing temperatures. Transparent nonpatterned phosphor films were uniform and crack-free, which mainly consisted of grains with an average size of 90 nm. Patterned gel and crystalline phosphor film bands with different widths (5-60 mum) were obtained. Significant shrinkage and a few defects were observed in the patterned films during the heat treatment process. The doped rare earth ions (A) showed their characteristic emission in crystalline YVO4 phosphor films because of an efficient energy transfer from vanadate groups to them. The Sm3+ and Er3+ ions also showed upconversion luminescence in a YVO4 film host. Both the lifetimes and PL intensity of the rare earth ions increased with increasing annealing temperature from 400 to 800 degreesC, and the optimum concentration for Eu3+ was determined to be 7 mol % and those for Dy3+, Sm3-, and Er3+ were 2 Mol % of Y3- in YVO4 films, respectively.

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In this presentation, nanocrystalline YVO4:A (A=Eu3+, Dy3+, SM3+, Er3+) phosphor films and their patterning were fabricated by a Pechini sol-gel process combined with a soft lithography (micro-molding in capillaries). XRD, FT-IR, AFM and optical microscope, absorption spectra, photoluminescence (PL) spectra as well as lifetimes were used to characterize the resulting films. The results of XRD indicated that the films began to crystallize at 400 degrees C and the crystallinity increased with the increase of annealing temperatures. Transparent nonpattemed phosphor films were uniform and crack free, which mainly consisted of grains with an average size of 90nm. Patterned crystalline phosphor film bands with different widths (5-30 mu m) were obtained. The doped rare earth ions (A) showed their characteristic emission in crystalline YVO4 phosphor films due to an efficient energy transfer from vanadate groups to them. The Sm3+ and Er3+ ions also showed upconversion luminescence in YVO4 film host. The optimum concentration for Eu3+ was determined to be 7 mol% and those for Dy3+, Sm3+, Er3+ were 2 Mol% of Y3+ in YVO4 films, respectively.

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Protein-Chip as micro-assays for the determination of protein interaction, the analysis, the identification and the purification of proteins has large potential applications. The Optical Protein-Chip is able to detect the multi-interaction of proteins and multi-bio-activities of molecules directly and simultaneously with no labeling. The chip is a small matrix on solid substrate containing multi-micro-area prepared by microfabrication with photolithography or soft lithography for surface patterning, and processed with surface modification which includes the physical, chemical, and bio-chemical modifications, etc. The ligand immobilization, such as protein immobilization, especially the oriented immobilization with low steric hindrance and high bio-specific binding activity between ligand and receptor is used to form a sensing surface. Each area of the pattern is corresponding to only one bioactivity. The interval between the areas is non-bioactive and optically extinctive. The affinity between proteins is used to realize non-labeling microassays for the determination of protein identification and protein interaction. The sampling of the chip is non-disturbing, performed with imaging ellipsometry and image processing on a database of proteins.

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The macrostructure can be changed by changing the morphology of its units. In this article, we use a colloidal template route, combined with hydrothermal growth method, to get the hexagonally arrayed ZnO nanorods on the polycrystalline ZnO substrate. More significantly, through controlling the morphology of ZnO crystals by adding structure-directing agent in the precursor solution, the highly ordered porous ZnO films were obtained instead of ZnO nanorods. This templated solvent-thermal method has great potential in micro/nano-fabrication. (C) 2008 Elsevier B.V. All rights reserved.