Evolution of structural defects in SiOx films fabricated by electron cyclotron resonance plasma chemical vapour deposition upon annealing treatment

We study the structural defects in the SiOx film prepared by electron cyclotron resonance plasma chemical vapour deposition and annealing recovery evolution. The photoluminescence property is observed in the as-deposited and annealed samples. [-SiO3](2-) defects are the luminescence centres of the ultraviolet photoluminescence (PL) from the Fourier transform infrared spectroscopy and PL measurements. [-SiO3](2-) is observed by positron annihilation spectroscopy, and this defect can make the S parameters increase. After 1000 degrees C annealing, [-SiO3](2-) defects still exist in the films.

The wave function evolution of an exciton in a bilayer system: Turning on a static in-plane electric field

The time evolution of the ground state wave function of an exciton in an ideal bilayer system is investigated within the framework of the effective-mass approximation. All of the moduli squared of the ground state wave functions evolve with time as cosine functions after an in-plane electric field is applied to the bilayer system. The variation amplitude and period of the modulus squared of the ground state wave function increase with the in-plane electric field F-r for a fixed in-plane relative coordinate r and fixed separation d between the electron and hole layers. Moreover, the variation amplitude and period of the modulus squared of the ground state wave function increase with the separation d for a fixed r and fixed in-plane electric field. Additionally, the modulus squared of the ground state wave function decreases as r increases at a given time t for fixed values of d and F-r. (c) 2007 American Institute of Physics.

Evolution of wetting layer in InAs/GaAs quantum dot system

For InAs/GaAs quantum dot system, the evolution of the wetting layer (WL) with the InAs deposition thickness has been studied by reflectance difference spectroscopy (RDS). Two transitions related to the heavy-and light-hole in the WL have been distinguished in RD spectra. Taking into account the strain and segregation effects, a model has been presented to deduce the InAs amount in the WL and the segregation coefficient of the indium atoms from the transition energies of heavy-and light-holes. The variation of the InAs amount in the WL and the segregation coefficient are found to rely closely on the growth modes. In addition, the huge dots also exhibits a strong effect on the evolution of the WL. The observed linear dependence of In segregation coefficient upon the InAs amount in the WL demonstrates that the segregation is enhanced by the strain in the WL.

Evolution of mosaic structure in InN grown by metalorganic chemical vapor deposition

Mosaic structure in InN layers grown by metalorganic chemical vapor deposition at various temperatures has been investigated by X-ray diffraction (XRD). With a combination of Williamson-Hall measurement and fitting of twist angles, it was found that variation of growth temperature from 450 to 550 degrees C leads to the variation of the lateral coherence length, vertical coherence length, tilt and twist of mosaic blocks in InN films in a, respectively, monotonic way. In particular, mosaic tilt increases whereas mosaic twist decreases with elevating temperature. Atomic force microscopy shows the morphological difference of the InN nucleation layers grown at 450 and 550 degrees C. Different coalescence thickness and temperature-dependent in-plane rotation of InN nuclei are considered to account for the XRD results. (c) 2006 Elsevier B.V. All rights reserved.

Evolution of wetting layers in InAs/GaAs quantum-dot system studied by reflectance difference spectroscopy

The wetting layers (WL) in InAs/GaAs quantum-dot system have been studied by reflectance difference spectroscopy (RDS), in which two structures related to the heavy-hole (HH) and light-hole (LH) transitions in the WL have been observed. The evolution and segregation behaviors of WL during Stranski-Krastanow (SK) growth mode have been studied from the analysis of the WL-related optical transition energies. It has been found that the segregation coefficient of Indium atoms varies linearly with the InAs amount in WL. In addition, the effect of the growth temperature on the critical thickness for InAs island formation has also been studied. The critical thickness defined by the appearance of InAs dots, which is determined by AFM, shows a complex variation with the growth temperature. However, the critical thickness determined by RDS is almost constant in the range of 510-540 degrees C.

Thermally induced evolution of phase transformations in gas hydrate sediment

Thermally induced evolution of phase transformations is a basic physical-chemical process in the dissociation of gas hydrate in sediment (GHS). Heat transfer leads to the weakening of the bed soil and the simultaneous establishment of a time varying stress field accompanied by seepage of fluids and deformation of the soil. As a consequence, ground failure could occur causing engineering damage or/and environmental disaster. This paper presents a simplified analysis of the thermal process by assuming that thermal conduction can be decoupled from the flow and deformation process. It is further assumed that phase transformations take place instantaneously. Analytical and numerical results are given for several examples of simplified geometry. Experiments using Tetra-hydro-furan hydrate sediments were carried out in our laboratory to check the theory. By comparison, the theoretical, numerical and experimental results on the evolution of dissociation fronts and temperature in the sediment are found to be in good agreement.

ENVIRONMENTAL EVOLUTION OF ORDOS DESERT IN CHINA SINCE 1.1MA B. P. AS INDICATED BY YULIN STRATIGRAPHICAL SECTION AND ITS GRAIN-SIZE ANALYSIS RESULTS

IEECAS SKLLQG

Shape evolution of CdSe nanocrystals in vegetable oils: A synergistic effect of selenium precursor

In this contribution, common vegetable oils are used as coordination solvents for synthesis of high quality CdSe nanocrystals. Various shaped nanocrystals (quantum dots, quantum rods, multipods, arc structure, etc.) can be produced free of alkylphosphonic acids. Shape evolution can be induced by three types of selenium precursors: ODE-Se, VO-Se and TOP-Se (ODE, 1-octadecene; VO, vegetable oil; TOP, trio-n-octylphosphine). The quantum yields of NCs are 15-40%. The full width at half-maximum (fwhm) of the photoluminescence spectra are 27 +/- 1 nm for quantum clots and 23 +/- 1 nm for quantum rods/multipods.

Nd isotope as the tracer of seawater evolution of early Miocene in the eastern Pacific Ocean

Fifty-six samples of nannofossil ooze were collected from Core PC5794 in the northern equatorial Pacific at 5 em intervals. With the methods of mass spectrometer (VG354) and ICP, the Nd isotopic compositions (epsilon(Nd)(t)), Mn contents and Mg/Sr ratios of carbonate phase have been analyzed. CaCO3 contents of bulk sediments were obtained by dissolution of 0.5 mol/L HCl. Based on these data, the high-resolution epsilon(Nd)(t) profile of seawater in early Miocene with core depth(or time) have been established. The values of epsilon(Nd)(t) range from -6.2 to -2.97 and 4 fluctuation cycles existed during 24.06-22.02 Ma. 4 low epsilon(Nd)(t) values (about -6.4) correspond to high CaCO3 contents, which implicates that there were 4 cold epochs or 4 times of Antarctic Bottom Water activity. They occurred at the time of 24.06 Ma, 23.85 Ma, 22.88 Ma and 22.26 Ma, respectively. High epsilon(Nd)(t) values correspond to the high Mn contents and high values of Mg/Sr ratio, which indicates the existence of 4 intense hydrothermal activity periods during 24.06-22 Ma, the durations of them are 4.05-23.98 Ma, 23.69-23.15 Ma, 22.74-22.37 Ma and 22.06-22.02 Ma, respectively.

Numerical research of heat generation in flashlamp-pumped Nd : glass disk amplifiers

The heat generation in a flashlamp-pumped Nd:glass disk amplifier is studied by the simulation of the whole pumping process, which is based on the ray-tracing method. The results of temperature rise distribution as well as gain distribution are presented. The evolution of heat generation in disk during the pumping process is discussed in detail. Some main factors related with the thermal effect, such as the quantum efficiency, fluorescence lifetime, and pulse duration, are investigated through studying the ratio of the heat generation to energy storage in the gain medium. The influence of each parameter on heat generation is studied carefully, and the results provide ways to decrease the heat generation during the pumping process. (c) 2005 Society of Photo-Optical Instrumentation Engineers.