Evolution of structural defects in SiOx films fabricated by electron cyclotron resonance plasma chemical vapour deposition upon annealing treatment
Data(s) |
2008
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Resumo |
We study the structural defects in the SiOx film prepared by electron cyclotron resonance plasma chemical vapour deposition and annealing recovery evolution. The photoluminescence property is observed in the as-deposited and annealed samples. [-SiO3](2-) defects are the luminescence centres of the ultraviolet photoluminescence (PL) from the Fourier transform infrared spectroscopy and PL measurements. [-SiO3](2-) is observed by positron annihilation spectroscopy, and this defect can make the S parameters increase. After 1000 degrees C annealing, [-SiO3](2-) defects still exist in the films. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Hao, XP ; Wang, BY ; Yu, RS ; Wei, L ; Wang, H ; Zhao, DG ; Hao, WC .Evolution of structural defects in SiOx films fabricated by electron cyclotron resonance plasma chemical vapour deposition upon annealing treatment ,CHINESE PHYSICS LETTERS,2008 ,25(3): 1034-1037 |
Palavras-Chave | #半导体物理 #SILICON-OXIDE FILMS #POSITRON-ANNIHILATION #POROUS SILICON #THIN-FILMS #PHOTOLUMINESCENCE #LAYERS #BEAM |
Tipo |
期刊论文 |