Modeling of a Laminar DC Arc Plasma Torch

In recent years, stable and long laminarplasma jets have been successfully generated, and thus it is possible to achieve low-noise working surroundings, better process repeatability and controllability, and reduced metal-oxidation degree in plasma materials processing. With such a recent development in thermal plasma science and technology as the main research background, modeling studies are performed concerning the DCarcplasmatorch for generating the long laminar argon plasma jet. Two different two-dimensional modeling approaches are employed to deal with the arc-root attachment at the anode surface. The first approach is based on circumferentially uniform arc-root attachment, while the second uses the so-called fictitious anode method. Modeling results show that the highest temperature and maximum axial-velocity at the plasmatorch exit are ～15000 K and ～1100 m/s, respectively, for the case with arc current of 160 A and argon flow rate of 1.95×10{sup}(-4)kg/s.

DC dielectrophoretic focusing of particles in a serpentine microchannel

Focusing particles into a tight stream is usually a necessary step prior to separating and sorting them. We present herein a proof-of-concept experiment of a novel particle focusing technique in DC electrokinetic flow through a planar serpentine microchannel. This focusing stems from the cross-stream dielectrophoretic motion induced within the channel turns. The observed particle focusing behavior is consistent with the predicted particle trajectories from a numerical modeling.

Fluctuation characteristics of arc voltage and jet flow in a non-transferred dc plasma generated at reduced pressure

A torch with a set of inter-electrode inserts between the cathode and the anode/nozzle with a wide nozzle exit was designed to generate plasma jets at chamber pressures of 500–10 000 Pa. The variation of the arc voltage was examined with the change in working parameters such as gas flow rate and chamber pressure. The fluctuation in the arc voltage was recorded with an oscilloscope, and the plasma jet fluctuation near the torch exit was observed with a high-speed video camera and detected with a double-electrostatic probe. Results show that the 300 Hz wave originated from the tri-phase rectified power supply was always detected under all generating conditions. Helmholtz oscillations over 3000 Hz was detected superposed on the 300 Hz wave at gas flow rates higher than 8.8 slm with a peak to valley amplitude lower than 5% of the average voltage value. No appreciable voltage fluctuation caused by the irregular arc root movement is detected, and mechanisms for the arc voltage and jet flow fluctuations are discussed.

Thermal, structural and optical properties of NiOx thin films deposited by reactive dc-magnetron sputtering

The NiOx thin films were deposited by reactive dc-magnetron sputtering from a nickel metal target in Ar + O-2 with the relative O-2 content 5%. The as-deposited NiOx, thin films could represent a two-component system comprising crystalline NiO particles dispersed in an amorphous Ni2O3. Decomposition temperature of the as-deposited NiO, thin films was at about 263 degrees C. After annealed at 400 degrees C for 30 min in air, the surface morphology of the films became very rough due to the decomposition of the Ni2O3, leading to the changes of the optical properties of the NiO, thin films. The reflectivity of the films annealed at 400 degrees C was lower than that of the as-deposited one and the optical contrast was 52% at 405 nm. (c) 2006 Elsevier B.V. All rights reserved.

Write-once blue laser recording using silicon doped SbOx thin films prepared by reactive dc-magnetron sputtering

Si:SbOx films have been deposited by reactive dc-magnetron sputtering from a Sb target with Si chips attached in Ar + O-2 with the relative O-2 content 7%. The as-deposited films contained Sb metal, Sb2O3, SiO, Si2O3 and SiO2. The crystallization of Sb was responsible for the changes of optical properties of the films. The results of the blue laser recording test showed that the films had good writing sensitivity for blue laser beam (406.7 nm), and the recording marks were still clear even if the films were deposited in air 60 days, which demonstrated that doping silicon in SbOx films can improve the stability of SbOx films. High reflectivity contrast of about 36% was obtained at a writing power 6 mW and writing pulse width 300 ns. (c) 2007 Elsevier B.V. All rights reserved.

The effects of oxygen partial pressure on the optical absorption edge and the UV emission energy of ZnO films

The optical absorption edge and ultraviolet (UV) emission energy of ZnO films deposited by direct current (DC) reactive magnetron sputtering at room temperature have been investigated. With the oxygen ratio increasing, the structure of films changes from zinc and zinc oxide coexisting phase to single-phase ZnO and finally to the highly (002) orientation. Both the grain size and the stress of ZnO film vary with the oxygen partial pressure. Upon increasing the oxygen partial pressure in the growing ambient, the visible emission in the room-temperature photoluminescence spectra was suppressed without sacrificing the band-edge emission intensity in the ultraviolet region. The peaks of photoluminescence spectra were located at 3.06---3.15 eV. From optical transmittance spectra of ZnO films, the optical band gap edge was observed to shift towards shorter wavelength with the increase of oxygen partial pressure.