Deformation behaviour of electrodeposited nanocrystalline Ni with broad grain size distribution

In the present work, nanocrystalline Ni (nc-Ni) with a broad grain size distribution (BGSD) of 5-120 nm and an average grain size of 27.2 nm was prepared. The BGSD nc-Ni sample shows a similar strength and good ductility in comparison with electrodeposited nc-Ni with a narrow grain size distribution. The intracrystalline dislocation network was observed in the post-deformed microstructure confirming the conventional intracrystalline dislocation sliding mechanism in BGSD nc-Ni. The uniaxial tensile loading-unloading-loading deformation shows BGSD nc-Ni has the capability to store dislocations in the grain interior, which is very limited compared with that of coarse grained metals. For BGSD nc-Ni, the strain rate sensitivity of flow stress m enhances with decreasing strain rate. At the strain rate of 5 x 10(-6) s(-1), m was estimated to be 0.055. At the corresponding strain rate, the enhanced ductility along with the decreased strength was achievable, indicating activation of other deformation mechanisms, e. g. grain boundary sliding or diffusion.

Measures for describing the size distribution of sediments

Numerous measures are used in the literature to describe the grain-size distribution of sediments. Consideration of these measures indicates that parameters computed from quartiles may not be as significant as those based on more rigorous statistical concepts. In addition, the lack of standardization of descriptive measures has resulted in limited application of the findings from one locality to another. The use of five parameters that serve as approximate graphic analogies to the moment measures commonly employed in statistics is recommended. The parameters are computed from five percentile diameters obtained from the cumulative size-frequency curve of a sediment. They include the mean (or median) diameter, standard deviation, kurtosis, and two measures of skewness, the second measure being sensitive to skew properties of the "tails" of the sediment distribution. If the five descriptive measures are listed for a sediment, it is possible to compute the five percentile diameters on which they are based (phi 5 , phi 16 , phi 50 , phi 84 , and phi 95 ), and hence five significant points on the cumulative carve of the sediment. This increases the value of the data listed for a sediment in a report, and in many cases eliminates the necessity of including the complete mechanical analysis of the sediment. The degree of correlation of the graphic parameters to the corresponding moment measures decreases as the distribution becomes more skew. However, for a fairly wide range of distributions, the first three moment measures can be ascertained from the graphic parameters with about the same degree of accuracy as is obtained by computing rough moment measures.

One-pot, high-yield synthesis of size-controlled gold particles with narrow size distribution

Here, we first report a facile one-step one-phase synthetic route to achieve size-controlled gold micro/nanoparticles with narrow size distribution by using o-diaminobenzene as a reducing agent in the presence of poly(N-vinyl-2-pyrrolidone) via a simple wet-chemical approach. All experimental data including that from scanning-electron microscopy, energy-dispersive X-ray spectroscopy, X-ray photoelectron spectroscopy, and X-ray diffraction techniques indicates that the gold micro/nanoparticles with a narrow size distribution were produced in high yield (similar to 100%).

Grain size distribution of quartz isolated from Chinese loess/paleosol

Grain size distribution of bulk loess-paleosol and quartz chemically extracted from the loess/paleosol shows that mean size of the bulk samples is always finer than that of the quartz, The original aeolian depositions have been modified to various degrees by post-depositional weathering and pedogenic processes. The grain size distribution of the isolated quartz should be close to that of the primary aeolian sediment because the chemical pretreatment excludes secondary produced minerals. Therefore, the grain size of the quartz may be considered to more clearly reflect the variations of winter monsoon intensity.

Shape stability of InAs self-assembled islands on vicinal GaAs(001) substrates

We have grown InAs self-assembled islands on vicinal GaAs( 001) substrates. Atomic force microscopy and photoluminescence studies show that the islands have a clear bimodal size distribution. While most of the small islands whose growth is limited by the width of one multi-atomic step have compact symmetric shapes, a large fraction of the large islands limited by the width of one step plus one terrace have asymmetric shapes which are elongated along the multi-atomic step lines. These results can be attributed to the shape-related energy of the islands at different states of their growth. (C) 2008 Elsevier B. V. All rights reserved.

Photoluminescence of Charged Low-Density InAs/GaAs Quantum Dots

We obtain low-density charged InAs quantum dots with an emission wavelength below 1 mu m using a low InAs growth rate. The quantum dots have a bimodal size distribution with an emission wavelength of around 1340 nm and 1000 nm, respectively. We observe the photoluminescence of the singly charged exciton in the modulation doped quantum dots in 77 K.

Comparative study of InAs quantum dots grown on different GaAs substrates by MOCVD

We present a comparative study of InAs quantum dots grown on Si-doped GaAs (10 0) substrates, Si-doped GaAs (10 0) vicinal substrates, and semi-insulating GaAs (10 0) substrates. The density and size distribution of quantum dots varied greatly with the different substrates used. While dots on exact substrates showed only one dominant size, a clear bimodal size distribution of the InAs quantum dots was observed on GaAs vicinal substrates, which is attributed to the reduced surface diffusion due to the presence of multiatomic steps. The emission wavelength is blueshifted during the growth of GaAs cap layer with a significant narrowing of FWHM. We found that the blueshift is smaller for QDs grown on GaAs (10 0) vicinal substrates than that for dots on exact GaAs (100) substrates. This is attributed to the energy barrier formed at the multiatomic step kinks which prohibits the migration of In adatoms during the early stage of cap layer growth. (c) 2005 Elsevier B.V. All rights reserved.