MEASUREMENT AND CALCULATION OF SPONTANEOUS EMISSION BRANCHING RATIOS, RELATIVE OSCILLATOR-STRENGTHS, TRANSITION-PROBABILITIES AND LEVEL LIFETIMES FOR ATOMIC URANIUM

We propose a laser induced sensitized fluorescence spectrometry for measuring the spontaneous emission branching ratios o?the transitions from the ten levels 5f36d7s7p-7M7, 5f36d7s7p-7L6, 5f37s27p-5K6, 5f26d27s2 - 5L7, 5f46d7s - 7L6, (17,070cm-1)-5L6, 5f26d27s2-5K6, 6d7s7p-7L5, 5f36d7s7p-7K5 and 5f26d27s2-5I5 to the ground state of atomic uranium (UI) for the first time. Their relative oscillator strengths have been measured by means of hollow cathode discharge (HCD) emission spectrometry. The radiative...

Distribution of uranium isotopes in the main channel of Yellow river (Huanghe), China

Uranium isotopes were measured in waters and suspended particulate matters (SPM) of the main channel of Yellow River, China that were sampled during four field trips between August 2005 and July 2006. The results show that the concentration of dissolved U (2.04-7.83 mu g/l) and the activity ratio of U-234/U-238 (1.36-1.67) are much higher than the average U concentrations and activity ratios of global major rivers. Mass balance calculations using the results of simulated experiments and measurement data show that the section of the Yellow River between Lanzhou and Sanmenxia has its dissolved U derived from two sources: suspended sediments (68%) and groundwater/runoff from loess deposits (32%). Both sources are related to the heavy erosion of the Chinese Loess Plateau. (C) 2008 Elsevier Ltd. All rights reserved.

Isotopic feature and uranium dating of the volcanic rocks in the Okinawa Trough

Volcanic rocks from the northern and middle Okinawa Trough were dated by uranium-series dating method. Differential fractions using magnetic procedure were designed to separate samples. New report on the ages and isotopic data of rocks in the northern trough (especially black pumice) was discussed. Based on the uranium dates and Sr-Nd isotopic ratio, magmatic evolution process of the Okinawa Trough was noted. Firstly, there have been wide silicic volcanic activities in the Okinawa Trough from late Pleistocene to present, and the volcanic rocks can be divided into three subgroups. Secondly, magma generally came from PREMA source area under the Okinawa Trough. Magmatic evolution in the northern trough was similar to the middle, but different to the south. Finally, volcanic activities indicated that opening of the southern Okinawa Trough did not happen due to the collision between Luson Arc and Eurasian Plate until the early Pleistocene.

Behavior of uranium in the Yellow River plume (Yellow river estuary)

The Yellow River (Huanghe) is the second largest river in China and is known for its high turbidity. It also has remarkably high levels of dissolved uranium (U) concentrations (up to 38 nmol l(-1)). To examine the mixing behavior of dissolved U between river water and seawater, surface water samples were collected along a salinity gradient from the Yellow River plume during September 2004 and were measured for dissolved U concentration, U-234:U-238 activity ratio, phosphate (PO43-), and suspended particulate matter. Laboratory experiments were also conducted to simulate the mixing process in the Yellow River plume using unfiltered Yellow River water and filtered seawater. The results showed a nonconservative behavior for dissolved U at salinities < 20 with an addition of U to the plume waters estimated at about 1.4 X 10(5) mol yr(-1). A similarity between variations in dissolved U and PO43- with salinity was also found. There are two major mechanisms, desorption from suspended sediments and diffusion from interstitial waters of bottom sediments, that may cause the elevated concentrations of dissolved U and PO43- in mid-salinity waters. Mixing experiments indicate that desorption seems more responsible for the elevated dissolved U concentrations, whereas diffusion influences more the enrichment of PO43-.

Mantle-derived gaseous components in ore-forming fluids of the Xiangshan uranium

The Xiangshan U deposit, the largest hydrothermal U deposit in China, is hosted in late Jurassic felsic volcanic rocks although the U mineralization post dates the volcanics by at least 20 Ma. The mineralization coincides with intrusion of local mantle-derived mafic dykes formed during Cretaceous crustal extension in South China. Ore-forming fluids are rich in CO2, and U in the fluid is thought to have been dissolved in the form of UO2 (CO3)22− and UO2 (CO3) 34− complexes. This paper provides He and Ar isotope data of fluid inclusions in pyrites and C isotope data of calcites associated with U mineralization (pitchblende) in the Xiangshan U deposit. He isotopic compositions range between 0.1 and 2.0Ra (where Ra is the 3He/4He ratio of air=1.39×10−6) and correlates with 40Ar/36Ar; although there is potential for significant 3He production via 6Li(n,α)3H(β)3He reactions in a U deposit (due to abundant neutrons), nucleogenic production cannot account for either the 3He concentration in these fluids, nor the correlations between He and Ar isotopic compositions. It is more likely that the high 3He/4He ratios represent trapped mantle-derived gases. A mantle origin for the volatiles of Xiangshan is consistent with the δ13C values of calcites, which vary from −3.5‰ to −7.7‰, overlapping the range of mantle CO2. The He, Ar and CO2 characteristics of the ore-forming fluids responsible for the deposit are consistent with mixing between 3He- and CO2-rich mantle-derived fluids and CO2-poor meteoric fluids. These fluids were likely produced during Cretaceous extension and dyke intrusion which permitted mantle-derived CO2 to migrate upward and remobilize U from the acid volcanic source rocks, resulting in the formation of the U deposit. Subsequent decay of U within the fluid inclusions has reduced the 3He/4He ratio, and variations in U/3He result in the range in 3He/4He observed with U/3He ratios in the range 5–17×103 likely corresponding to U concentrations in the fluids b0.2 ppm.

Defects in U3+: CaF2 single crystals grown under different conditions by the temperature gradient technique

Defects in as-grown U3+ : CaF2 crystals grown with or without PbF2 as an oxygen scavenger were studied using Raman spectra, thermoluminescence glow curves, and additional absorption (AA) spectra induced by heating and gamma-irradiation. The effects of heating and irradiation on as-grown U3+: CaF2 crystals are similar, accompanied by the elimination of H-type centers and production of F-type centers. U3+ is demonstrated to act as an electron donor in the CaF2 lattice, which is oxidized to the tetravalent form by thermal activation or gamma-irradiation. In the absence of PbF(2)as an oxygen scavenger, the as-grown U3+:CaF2 crystals contain many more lattice defects in terms of both quantity and type, due to the presence of O2- impurities. Some of these defects can recombine with each other in the process of heating and gamma-irradiation. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Optical properties of UO2 and PuO2

We perform first-principles calculations of electronic structure and optical properties for UO2 and PuO2 based on the density functional theory using the generalized gradient approximation (GGA) + U scheme. The main features in orbital-resolved partial density of states for occupied f and p orbitals, unoccupied d orbitals, and related gaps are well reproduced compared to experimental observations. Based on the satisfactory ground-state electronic structure calculations, the dynamical dielectric function and related optical spectra, i.e., the reflectivity, adsorption coefficient, energy-loss, and refractive index spectrum, are obtained. These results are consistent with the available experiments.

Magnetic properties of silicon doped with gadolinium

The magnetic semiconductor GdxSi1-x was prepared by low-energy dual ion-beam epitaxy. GdxSi1-x shows excellent magnetic properties at room temperature. A high magnetic moment of 10 mu(B) per Gd atom is observed. The high atomic magnetic moment is interpreted as being a result of the RKKY mechanism. The indirect exchange interaction between ions is strong at large distances due to the low state density of the carriers in the magnetic semiconductor.

Magnetic properties and rectifying behaviour of silicon doped with gadolinium

The magnetic/nonmagnetic p-n junction was prepared by implanting gadolinium into the n-type silicon with low-energy dual-ion-beam epitaxy technology. The magnetic layer GdxSi1-x shows excellent magnetic properties at room temperature. High magnetic moment 10mu(B) per Gd atom is observed, which is interpreted by RKKY mechanism. Magnetic/nonmagnetic p-n junctions show rectifying behaviour, but no magnetoresistance is observed.

GdxSi grown with mass-analyzed low energy dual ion beam epitaxy technique

Semiconducting gadolinium silicide GdxSi samples were prepared by mass-analyzed low-energy dual ion beam epitaxy technique. Auger electron spectroscopy depth profiles indicate that the gadolinium ions are implanted into the single-crystal silicon substrate and formed 20 nm thick GdxSi film. X-ray double-crystal diffraction measurement shows that there is no new phase formed. The XPS spectra show that one type of silicon peaks whose binding energy is between that of silicide and silicon dioxide, and the gadolinium peak of binding energy is between that of metal Gd and Gd2O3. All of these results indicate that an amorphous semiconductor is formed. (C) 2002 Elsevier Science B.V. All rights reserved.

MnSi similar to 1.73 grown on silicon with mass-analyzed low energy dual ion beam epitaxy technique

Semiconducting manganese silicide, Mn27Si47 and Mn15Si26, were obtained using mass-analyzed low energy dual ion beam epitaxy technique, Auger electron spectroscopy depth profiles showed that some of the Mn ions were deposited on single-crystal silicon substrate and formed a 37.5 nm thick Mn film, and the other Mn ions were successfully implanted into the Si substrate with the implantation depth of 618 nm. Some samples were annealed in the atmosphere of flowing N-2 at 840 degreesC. X-ray diffraction measurements showed that the annealing was beneficial to the formation of Mn27Si47 and Mn15Si26 (C) 2001 Published by Elsevier Science B.V.

Structural study of YSi1.7 layers formed by channeled ion beam synthesis

High quality YSi1.7 layers (chi(min) of Y is 3.5%) have been formed by 60 keV Y ion implantation in Si (111) substrates to a dose of 1.0 x 10(17)/cm(2) at 450 degrees C using channeled ion beam synthesis (CIBS). It shows that, compared to the conventional nonchanneled ion beam synthesis, CIBS is beneficial in forming YSi1.7 layers with better quality due to the lower defect density created in the implanted layer. Rutherford backscattering/channeling and x-ray diffraction have been used to study the structure and the strain of the YSi1.7 layers. The perpendicular and parallel elastic strains of the YSi1.7 epilayer are e(perpendicular to) = -0.67% +/- 0.02% and e(parallel to) = +1.04% +/- 0.08%. The phenomenon that a nearly zero mismatch of the YSi1.7/Si (111) system results in a nonpseudomorphic epilayer with a rather large parallel strain relative to the Si substrate (epsilon(parallel to) = +1.09%) is explained, and the model is further used to explain the elastic strain of epitaxial ErSi1.7 and GdSi1.7 rare-earth silicides. (C) 1998 American Vacuum Society.