Growth and properties of ZnO thin film on beta-Ga2O3(100) substrate by pulsed laser deposition

Zinc oxide (ZnO) thin films were grown on the beta-Ga2O3 (100) substrate by pulsed laser deposition (PLD). X-ray diffraction (XRD) indicated that the ZnO films are c-axis oriented. The optical and electrical properties of the films were investigated. The room temperature Photoluminescence (PL) spectrum showed a near band emission at 3.28 eV with two deep level emissions. Optical absorption indicated a visible exciton absorption at room temperature. The as-grown films had good electrical properties with the resistivities as low as 0.02 Omega cm at room temperature. Thus, beta-Ga2O3 (100) substrate is shown to be a suitable substrate for fabricating ZnO film. (c) 2006 Elsevier B.V. All rights reserved.

Growth and spectral characterization of beta-Ga2O3 single crystals

Beta gallium oxide (beta-Ga2O3) single crystals were grown by the floating zone technique. The absorption spectra and the luminescence of the crystals were measured. The absorption spectra showed an intrinsic short cutoff edge around 260 nm with two shoulders at 270 and 300 nm. Not only the characteristic UV (395 nm), blue (471 nm) and green (559 nm) lights, but also the red (692 nm) light can be seen in the emission spectra. The deep UV light was attributed to the existing of quantum wells above the valence band and the red light was owed to the electron-hole recombination via the vicinity donors and acceptors. (c) 2006 Elsevier Ltd. All rights reserved.

Preparation of crystalline beta barium borate thin films on Sr2+-doped alpha barium borate substrates by liquid phase epitaxy

Thin films of beta barium borate have been prepared by liquid phase epitaxy on Si2+-doped alpha-BaB2O4 (alpha-BBO, the high temperature phase of barium berate) (001) and (110) substrates. The results of X-ray diffraction indicate that the films show highly (001) preferred orientation on (001)-oriented substrates while the films grown on (110) substrates are textured with (140) orientation. The crystallinity of these films was found to depend on growth temperature, rotation rate, dip time and orientation of substrate. Growth conditions were optimized to grow films with (001) orientation on (001) substrates reproducibly. The films show second harmonic generation of 400 nm light upon irradiation with 800 nm Ti: Sapphire femtosecond laser light. (c) 2005 Elsevier B.V. All rights reserved.

Composite substrate LiGaO2(001)/beta-Ga2O3(100) fabricated by vapor transport equilibration

Highly (001) orientation LiGaO2 layers have been successfully fabricated on (100) beta-Ga2O3 surface by vapor transport equilibration (VTE) technique. The temperature is very important for the WE treatment. At low temperature (800 degrees C), LiGaO(2)layers are textured. As the temperature was raised to 1100 C the layer becomes highly oriented in the [100] direction. It shows that the best temperature for WE treatment is 1100 degrees C. This technique is promising to fabricate small lattice mismatch composite substrate of LiGaO2 (001)//beta-Ga2O3 (100) for GaN films. (c) 2006 Elsevier B.V. All rights reserved.

Fabrication of beta-BaB2O4 layers on (001) Sr2+-doped alpha-BaB2O4 by vapor transport equilibration (VTE)

Crystalline beta-BBO layers have been successfully prepared on (0 0 1)-oriented Sr2+-doped alpha-BBO substrates using vapor transport equilibration technique. The layers were characterized by X-ray diffraction, X-ray rocking curve and transmission spectra. The present results manifest that the VTE treatment time and powder ratio are important factors on the preparation of beta-BBO layers. beta-BBO layers with a highly (0 0 l) preferred orientation were obtained according to XRD profiles. The full width at half-maximum of the rocking curve for the layer is as low as about 1000 in., which shows the high crystallinity of the layer. These results reveal the possibility of fabricating beta-BBO (0 0 1) layers on (0 0 1)-oriented Sr2+-doped alpha-BBO substrates by VTE. (C) 2006 Elsevier Ltd. All rights reserved.

Defects in LPE-grown beta-barium borate (beta-BaB2O4) thin films

Morphological defects in beta-barium borate (beta-BBO) thin films grown on Sr2+ -doped alpha-BBO substrates by liquid phase epitaxy (LPE) technique were studied by scanning electron micrograph (SEM), atomic force microscopy (AFM) and optical spectroscopy. The present results indicate that the main defects exit in beta-BBO thin films are microcracks and hollow structure. The formation of microcrack is due to the lattice mismatch and the difference of thermal expansion coefficients between substrate and film. The hollow structure might be caused during the combination of islands, which formed in the initial stage. (C) 2006 Elsevier GmbH. All rights reserved.

Single crystal beta-Ga2O3: Cr grown by floating zone technique and its optical properties

beta-Ga2O3: Cr single crystals were grown by floating zone technique. Absorption spectra and fluorescence spectra were measured at room temperature. The values of field splitting parameter Dq and Racah parameter B were obtained by the peak values of absorption spectra. The value 10Dq/B=23.14 manifests that in beta-Ga2O3 crystals Cr3+ ions are influenced by low energy crystal field. After high temperature annealing in air, the Cr3+ intrinsic emission was enhanced and the green luminescence disappeared. The strong and broad 691 nm emission was obtained at 420 nm excitation due to the electron transition occurred from T-4(2) to (4)A(2). The studies manifest that the beta-Ga2O3 crystals have the potential application for tunable laser.

Demonstration of GaN/InGaN light emitting diodes on (100) beta-Ga2O3 substrates by metalorganic chemical vapour deposition

The growth and fabrication of GaN/InGaN multiple quantum well (MQW) light emitting diodes ( LEDs) on ( 100) beta-Ga2O3 single crystal substrates by metal-organic chemical vapour deposition (MOCVD) technique are reported. x-ray diffraction (XRD) theta-2 theta. scan spectroscopy is carried out on the GaN buffer layer grown on a ( 100) beta-Ga2O3 substrate. The spectrum presents several sharp peaks corresponding to the ( 100) beta-Ga2O3 and ( 004) GaN. High-quality ( 0002) GaN material is obtained. The emission characteristics of the GaN/InGaN MQW LED are measurement. The first green LED on beta-Ga2O3 with vertical current injection is demonstrated.

The separation of beta-BBO phase in alpha-BBO crystal by the irradiation of femtosecond laser

We observed and described some phenomena, which were that when a alpha-BBO crystal was irradiated by a focused femtosecond laser beam, the temperature effect happened in a minute area of focus, then the induced beta-BBO phase was separated within the minute area in the alpha-BBO crystal. (C) 2007 Elsevier B.V. All rights reserved.

Studies of magnetic interactions in Mn-doped β-Ga2O3 from first-principles calculations

The magnetic behavior of Mn-doped beta-Ga2O3 is Studied from first-principles calculations within the generalized gradient approximation method. Calculations show that ferromagnetic ordering is always favorable for configurations in which two Mn ions substitute either tetrahedral or octahedral sites, and the ferromagnetic ground state is also sometimes favorable for configurations where one Mn ion substitutes a tetrahedral site and another Mn ion substitutes an octahedral site. However, the configurations of the latter case are less stable than those of the former. (c) 2008 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

水稻(Oryza sativa L. sspjaponica)成熟与萌发花粉的蛋白质组学研究

花粉是高度退化的两细胞或三细胞生物体。作为雄配子体，花粉储藏了父本的全部遗传信息，并通过与柱头识别、萌发和花粉管极性生长将精子送到雌性的胚囊中，完成双受精作用。由于花粉在植物有性生殖过程中的特殊作用和花粉管极性生长的独特细胞学过程，几十年来一直被作为研究这一系列精细细胞学过程的模式，但是其中关键事件的分子机制并不十分清楚。 我们利用蛋白质组学技术鉴定了水稻成熟花粉三个不同组分（花粉外被蛋白、花粉外被／细胞壁相关和可释放蛋白、花粉内在蛋白）中表达的共322种蛋白质。其中，参与信号转导(10%)、细胞壁重塑和代谢(11%)、蛋白质代谢(14%)以及糖类和能量代谢(25%)的蛋白质被高度代表。并且很多是首次被在成熟花粉中得到鉴定的具有重要功能的蛋白质，包括蛋白激酶、受体激酶相互作用蛋白、GDP解聚抑制因子、含有C2结构域蛋白质和亲环蛋白等参与信号转导的蛋白质，eIF4A、线粒体加工肽酶、UFD1和AAA+ATP酶等参与蛋白质合成、装配和降解的蛋白质，以及逆糖基化多肽、似纤维素合酶OsCsLF7等参与细胞壁重塑和代谢的蛋白质等。生物信息学分析表明，在我们鉴定的蛋白质中有11%的蛋白质功能未知并且不含有任何已知的功能结构域。另外，我们利用从头测序技术鉴定了5种新蛋白质。这些首次在花粉中被鉴定的蛋白质、未知功能蛋白质和新蛋白质在花粉萌发过程中的生物学功能值得进一步研究。 进而，我们利用比较蛋白质组学技术获得了水稻花粉体外萌发过程中差异表达的160个鉴定结果（代表120种蛋白质），生物信息学分析表明它们隶属于13个功能类群。其中，参与细胞壁代谢（占24%，如UDP-葡萄糖焦磷酸化酶和第三类过氧化物酶）、蛋白质代谢（占11%，如eIF4A和20S蛋白酶体的亚基）、细胞骨架动力学（占8%，如肌动蛋白、微管蛋白和profilin）和胁迫反应（占7%，如抗坏血酸过氧化物酶）以及糖类和能量代谢（占24%）的蛋白质被高度代表。共有94个鉴定结果(73种蛋白质)在花粉萌发过程中表达丰度上调，包括几乎全部参与蛋白质代谢的蛋白质，多数参与细胞骨架动态变化和离子转运的蛋白质，以及部分参与糖类和能量代谢的蛋白质等。并且有53个鉴定结果（41种蛋白质）可能在萌发过程中被释放到培养基中（柱头上），可能参与了柱头细胞和花粉管通道细胞细胞壁的松弛和水解（如第三类过氧化物酶家族成员、多聚半乳糖醛酸酶、1，4-beta-木聚糖酶和一些花粉过敏源蛋白），或者参与了花粉．柱头的信号识别过程（如钙网蛋白和含有C2结构域的蛋白）。有8种传统认为是参与糖类和能量代谢的酶可能在萌发过程中被释放到培养基中（柱头上），如烯醇酶、磷酸丙糖异构酶和磷酸甘油酸激酶。 同时，我们发现在鉴定的成熟花粉表达的蛋白质中，有23%的蛋白质以多个同工型的形式存在，并且有29种蛋白质的多个同工型的表达丰度在萌发过程中发生变化。它们主要参与了细胞壁代谢、糖类和能量代谢、细胞骨架、胁迫反应和离子运输等代谢过程。我们利用荧光染色技术，检测到其中14种蛋白质可能被磷酸化或者糖基化修饰。这意味着由于翻译后修饰形成的同工型蛋白质在花粉萌发和花粉管生长过程中具有重要作用。 总之，我们以水稻为模式研究其成熟花粉和萌发花粉的蛋白质表达特征，首次报道了单子叶植物成熟花粉不同组分中表达的蛋白质及其功能类群特征，并且首次报道了被子植物花粉萌发过程中表达丰度变化蛋白质的功能类群特征，为进一步揭示花粉萌发和花粉管生长的分子机制提供了重要的蛋白质水平信息。