COMPARISON OF MASTICATORY MORPHOLOGY BETWEEN RHINOPITHECUS-BIETI AND R-ROXELLANA

The masticatory apparatus for two endemic species of golden monkey in China, Rhinopithecus bieti and Rhinopithecus roxellana, were compared with those of macaques, Macaca and leaf monkeys, Presbytis. Multivariate analyses demonstrated that the two golden monkey species are distinct. Interspecies allometric analyses revealed that golden monkeys differ in their masticatory apparatus from both macaques and leaf monkeys. The prominent symphysial fusion, corpus, and sagittal condylar dimension of R. roxellana may produce efficient biting force on the incisal and posterior canine teeth, with the heavy reaction force barn on the temporomandibular joint. However, the well-developed bizygamatic width and mandibular height in R. bieti suggest that posterior canine function is similarly prominent in R. roxellana, while incisal function is not. (C) 1995 Wiley-Liss, Inc.

鱼类病原菌中R~+质粒的检出及其特性

本文研究了5个属的15株鱼类病原菌对17种抗菌药物的耐药性。其中，对β-内酰胺类和红霉素的耐药率最高，对妥布霉素最敏感。以E．coliK-12RC85为受体菌，鱼类病原菌为供体菌，采用细菌接合试验，从耐氨苄青霉素、四环素和磺胺的嗜水气单胞菌CJ26株中检测到一株耐四环素和磺胺的可自身传递的R���粒pWH9601。它对四环素的抗性可被四环素类药物所诱导。pWH9601上的耐药基因在供体菌和受体菌中的表达水平有所不同。该质粒可在37℃下，15min内通过接合方式，转移到E．coliK－12RC85中，而且这种转

武汉东湖浮游植物的演变(1956-1975年)和富营养化问题

本文根据1956—1957、1962—1963和1973—1975年在湖北省武汉市东湖进行的三次调查资料,总结了过去二十年内在东湖两个代表性采样站上浮游植物群落生态学的主要变化(包括数量、种类组成、优势种类、多样性指数和初级生产力)。年平均总数在二十年内由每毫升几百个增为几千个。由甲藻和硅藻占优势逐步转变为以绿藻和蓝藻占优势,蓝藻中的大型种类明显增加。年数量变动曲线原来呈春季和秋季两个高峰,但60年代后,已变为夏、秋季的一个蓝藻高峰,而且数量大,延续时间长。浮游植物的年初级生产量和日最高初级生产量也有明显

Strain Effects on the Optical Polarization Properties of R-Plane Wurtzite GaN

Using the effective-mass Hamiltonian for an arbitrary direction wurtzite semiconductor on the basis of k.p theory, we investigate the strain effects on the transition energies and optical properties in the R-plane ([1012]-oriented plane) GaN. The results show that (1) the transition energies decrease with the biaxial strains changing from -0.5 to 0.5%; and (2) giant optical anisotropy appears in the R-plane which is significantly affected by the biaxial strains. We clarify the relation between the strains and the polarization properties. Finally, we discuss the application of these properties to the R-plane GaN based devices. (c) 2009 The Japan Society of Applied Physics

Growth of nonpolar a-plane GaN on nano-patterned r-plane sapphire substrates

Sapphire substrates were nano-patterned by inductive coupled plasma etching process. Nonpolar a-plane GaN films were grown on planar and nano-patterned r-plane sapphire substrates by metal organic chemical vapor deposition. The anisotropic characteristic and the crystalline quality of the a-plane GaN films were studied through XRD rocking curves. The cross section and surface morphologies of the a-plane GaN films were studied using SEM and AFM measurements, respectively. The crystal quality and surface flatness of the nonpolar a-plane GaN were greatly improved through the usage of the nano-patterned r-plane sapphire substrates. (C) 2008 Elsevier B.V. All rights reserved.

Low-threshold-current and high-out-power 660 nm laser diodes with a p-GaAs current blocking layer for DVD-RAM/R

We investigate a new structure of high-power 660-nm AlGaInP laser diodes. In the structure, a p-GaAs layer is grown on the ridge waveguide serving as the current-blocking layer, and nonabsorbing windows are only fabricated near the cavity facets to increase the catastrophic-optical-damage level. Stable fundamental mode operation was achieved at up to 80 mW without kinks, and the maximum output power was 184 mW at 22 degrees C. The threshold current was 40 mA.

Luminescence properties of multi-layer InGaN quantum dots grown on C- and R-plane sapphire substrates

In this study, we report comparative luminescence properties of multi-layer InGaN quantum dots grown on C- and R-plane sapphire substrates by metal organic chemical vapor deposition (MOCVD). High-density InGaN quantum dots (QDs) are formed on GaN templates by decreasing the growth temperature and increasing the adatom hopping-barrier through surface passivation. Atomic force microscopy (AFM) has been employed to estimate the size and height of these dots. Photoluminescence (PL) spectra recorded from (1120) InGaN QDs/(1102) sapphire show much stronger emission intensity compared to spectra recorded from (0001) InGaN QDs/(0001) sapphire. Due to the absence of strong spontaneous polarization and piezoelectric field, such (1150) InGaN QDs in the active layers would lead to high efficiency light emitting devices. (c) 2005 Elsevier B.V. All rights reserved.

Structure and magnetic properties of ScFe6Ga6-type RCo5Ga7 (R = Y, Tb, Dy, Ho and Er)

The structure and magnetic properties of the RCo5Ga7 (R = Y, Tb, Dy, Ho and Er) compounds with the ScFe6Ga6-type structure have been studied. The stability of RCo5Ga7 is closely related with the ratio of the metal radii R-RE/R-(Co,R-Ga). With R-RE/R-(Co,R-Ga) less than or equal to 1.36, the compounds can be stabilized in the ScFe6Ga6-type structure. The lattice of RCo5Ga7 shrinks as the atomic order of R increases, and it is consistent with the lanthanide contraction. The structure analysis based on X-ray diffraction patterns reveals that in the orthorhombic RCo5Ga7 (Immm), R occupies the 2a site, and Co enters into the 8k and the 4h sites, and Ga is at the 4e, 4f, 4g, 4h and 8k sites. The interatomic distances and the coordination numbers of RCo5Ga7 are provided from the refinement results. The short interatomic distance (less than 2.480 Angstrom) between the Co ions results in the negative magnetic interaction, which does not favor ferromagnetic ordering. The magnetic moment of YCo5Ga7 is absent, and RCo5Ga7 (R = Tb, Dy, Ho and Er) may have long-range magnetic ordering with the paramagnetic Curie temperature lower than 5 K. (C) 2004 Elsevier Inc. All rights reserved.

Polarized Raman scattering studies of nonpolar a-plane GaN films grown on r-plane sapphire substrates by MOCVD

Nonpolar (1120) a-plane GaN thin films were grown on r-plane (1102) sapphire substrates by low-pressure metal organic chemical vapor deposition (MOCVD). The stress characteristics of the a-plane GaN films were investigated by means of polarized Raman scattering spectra in backscattering configurations. The experimental results show that there are strong anisotropic in-plane stresses within the epitaxial a-plane GaN films by calculating the corresponding stress tensors. The temperature dependence of Raman scattering spectra was studied in the range from 100 K to 550 K. The measurements reveal that the Raman phonon frequencies decrease with increasing temperature. The temperature at which nonpolar a-plane GaN films are strain free is discussed. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Heterojunction solar cells with n-type nanocrystalline silicon emitters on p-type c-Si wafers

Hydrogenated nanocrystalline silicon (nc-Si:H) n-layers have been used to prepare heterojunction solar cells on flat p-type crystalline silicon (c-Si) wafers. The nc-Si:H n-layers were deposited by radio-frequency (RF) plasma enhanced chemical vapor deposition (PECVD), and characterized using Raman spectroscopy, optical transmittance and activation energy of dark-conductivity. The nc-Si:H n-layers obtained comprise fine grained nanocrystallites embedded in amorphous matrix, which have a wider bandgap and a smaller activation energy. Heterojunction solar cells incorporated with the nc-Si n-layer were fabricated using configuration of Ag (100 nm)/1T0 (80 nm)/n-nc-Si:H (15 nm)/buffer a-Si:H/p-c-Si (300 mu m)/Al (200 nm), where a very thin intrinsic a-Si:H buffer layer was used to passivate the p-c-Si surface, followed by a hydrogen plasma treatment prior to the deposition of the thin nanocrystalline layer. The results show that heterojunction solar cells subjected to these surface treatments exhibit a remarkable increase in the efficiency, up to 14.1% on an area of 2.43 cm(2). (c) 2006 Elsevier B.V. All rights reserved.