表面热透镜技术应用于薄膜微弱吸收测量的理论和实验

由薄膜表面光热形变简化理论和表面热透镜衍射理论导出表面热透镜信号表达式,从理论上证明了表面热透镜信号和薄膜吸收率的线性关系.应用表面热透镜技术研制了薄膜吸收测量仪,测量结果表明其吸收率测量灵敏度和精度均达10-6量级.

High average power and short pulse duration continuous wave mode-locked Nd : GdVO4 laser with a semiconductor absorber mirror

Passive mode locking of a solid-state Nd:GdVO4 laser is demonstrated. The laser is mode locked by use of a semiconductor absorber mirror (SAM). A low Nd3+ doped Nd:GdVO4 crystal is used to mitigate the thermal lens effect of the laser crystal at a high pump power. The maximum average output power is up to 6.5 W, and the pulse duration is as short as 6.2 ps. The optic-to-optic conversion efficiency is 32.5% and the repetition rate is about 110 MHz.

The influence of the microstructure evolution on the surface morphology in the annealing process of helium-implanted spinel

Single-crystalline spinel (MgAl2O4) specimens were implanted with helium ions of 100 keV at three successively increasing fluences of (0.5, 2.0 and 8.0) x 10(16) ions/cm(2) at room temperature. The specimens were subsequently annealed in vacuum at different temperatures ranging from 500 to 1100 degrees C. Different techniques, including Fourier transformed infrared spectroscopy (FTIR), thermal desorption spectrometry (TDS), atomic force microscopy (AFM) and scanning electron microscopy (SEM) were used to investigate the specimens, It was found that the absorbance peak in the FTIR due to the stretching vibration of the Al-O bond shifts to smaller wave numbers with increasing fluence, shifting back to larger wave numbers with an increase of annealing temperature. The absorbance peak shift has a linear relationship with the fluence increase in the as-implanted state, while it does not have a linear relationship with the fluence increase after the annealing process. Surface deformation occurred in the specimens implanted with fluences of 2.0 and 8.0 x 10(16) ions/cm(2) in the annealing process. The phenomena described above can be attributed to differences in defect formation in the specimens. (C) 2008 Elsevier B.V. All rights reserved.

Investigation of thermal unfolding process of cyanic adduct of horseradish peroxidase by Fourier transform infrared and circular dichroism spectrometry

Detailed circular dichroism(CD) and Fourier transform infrared (FTIR) studies have been carried out to monitor thermal unfolding of horseradish peroxidase isoenzyme C(HRP) inhibited by CN(HRP-CN). The results suggest that HRP-CN is quite different from native HRP with different spin states of Fe of heme and different coordinated states. Cyanide becomes the sixth ligand of Fe(I) of heme and the hydrogen-binding network is destroyed partly at the same time, which cause the drastic decrease of thermal stability of HRP. The FTIR and Soret-CD spectra analysis demonstrate that during the heating process there is an intermediate state(I') which has both partly destroyed secondary and tertiary structures of native HRP, then it is the appearance of protein aggregation state(A) after fully unfolding. The unfolding pathway thus can be shown as follows: I -->I'-->U -->A.

THERMAL-DECOMPOSITION PROCESSES OF SOME ELECTRICALLY CONDUCTING POLYMERS INVESTIGATED BY DIRECT PYROLYSIS MASS-SPECTROMETRY

Thermal decomposition processes of poly(thio-1,4-phenylene) (PPS), polythiophene (PT) and polyaniline (PAn) were investigated by direct pyrolysis EI or CI mass spectrometry (DPMS). They can provide up to heptemer pyrolynates and give some structure properties. The results indicate that the thermal degradation all undergoes in radical decomposition, PPS pyrolyzes into linear and cyclic oligmers, but PT and PAn pyrolyze only into linear oligmers.

Thermal decomposition processes of polyaniline and poly-o-toluidine investigated by direct pyrolysis mass spectrometry

The thermal decomposition of polyaniline(PAn) and poly-o-toluidine(POT) was studied by means of direct pyrolysis mass spectrometry(DM) and MS/MS, The results showed that both benzene-diamine and quinone-diimine units were produced, and the intensities of fragments corresponding to quinone-diimine units increased as the oxidation degrees increased, The mechanism of thermal decomposition of PAn and POT was given for the first time.

Thermal annealing behaviour of Pt on n-GaN Schottky contacts

The structural evolution and temperature dependence of the Schottky barrier heights of Pt contacts on n-GaN epilayer at various annealing temperatures were investigated extensively by Rutherford backscattering spectrometry, x-ray diffraction measurements, Auger electron spectroscopy, scanning electron microscopy and current-voltage measurements. The temperature dependence of the Schottky barrier heights may be attributed to changes of surface morphology of Pt films on the surface and variation of nonstoichiometric defects at the interface vicinity. Experimental results indicated the degradation of Pt contacts on n-GaN above 600 degreesC.

Microstructure studies of PdGe/Ge ohmic contacts to n-type GaAs formed by rapid thermal annealing

A low resistance and shallow ohmic contact to n-GaAs is performed by using Ge/Pd/GaAs trilayer structure and rapid thermal annealing process. The dependence of specific contact resistivity on the temperature of rapid thermal annealing is investigated. A good ohmic contact is formed after annealing at 400-500 degrees C for 60 s. The best specific contact resistivity is 1.4 x 10(-6) Omega cm(2). Auger electron spectroscopy (AES), secondary ion mass spectrometry (SIMS) and scanning electron microscopy (SEM) are used to analyze the interfacial microstructure. A strong correlation between the contact resistance and the film microstructure is observed.

Formation of Au nanoparticles in sapphire by using Ar ion implantation and thermal annealing

In this paper, we present results of the synthesis of gold nanoclusters in sapphire, using Ar ion implantation and annealing in air. Unlike the conventional method of Au implantation followed by thermal annealing, Au was deposited on the surface of m- and a- cut sapphire single crystal samples including those pre-implanted with Ar ions. Au atoms were brought into the substrate by subsequent implantation of Ar ions to form Au nanoparticles. Samples were finally annealed stepwisely in air at temperatures ranging from 400 to 800 C and then studied using UV–vis absorption spectrometry, transmission electron microscopy and Rutherford backscattered spectrometry. Evidence of the formation Au nanoparticles...

Sulfonated poly(ether ether ketone)/aminopropyltriethoxysilane/phosphotungstic acid hybrid membranes with non-covalent bond: Characterization, thermal stability, and proton conductivity

Sulfonated poly(ether ether ketone) (SPEEK) and aminopropyltriethoxysilane (KH550) hybrid membranes doped with different weight ratio of phosphotungstic acid (PWA) were prepared by the casting procedure, as well as PWA as a catalyst for sol-gel process of KH550. The chemical structures of hybrid membranes were characterized by energy dispersive X-ray spectrometry (EDX) and Fourier transform infrared spectroscopy (FTIR). The morphology of hybrid membranes was investigated by scanning electron microscopy (SEM) and atomic force microscopy (AFM). The results had proved the uniform and homogeneous distribution of KH550 and PWA in these hybrid membranes.