用电子散斑干涉法测量材料热膨胀系数

利用双光束电子散斑干涉法(ESPI)对试件受热变形进行了实时观测,针对一次实验过程中得到的图片较多(300～500幅)的特点,在图像处理时摒弃了以往的手动识别等位移线的办法,用MATLAB语言编写了批处理程序,能够在采集的大量散斑图片中自动快速准确地标定等位移线.得到相应的位移和应变.并结合实时测量的温度值,获得了45钢和LY12铝合金在不同温升率下的热膨胀系数及其随温度的变化.实验结果表明,在涉及的温升率范围内,温升率的改变对材料热膨胀系数的影响不明显.材料的热膨胀系数随温度的升高略有上升.

Shock Tube Studies on Recombination Kinetics of Sodium Ion with Electron

The ionization kinetics of sodium diluted in argon is studied in a shock tube, in which the test gas mixture is ionized by a reflected shock wave and subsequently quenched by a strong rarefaction wave. A Langmuir electrostatic probe is used to monitor the variation of the ion number density at the reflection shock wave region. The working state of the probe is in the near fi-ee fall region and a correction for reduction of the probe current due to elastic scattering in the probe sheath is introduced. At the temperature range of 800 to 2600 K and in the ambience of argon gas, the three-body recombination rate coefficient of the sodium ion with electron is determined: 3.43 x 10(-14)T(-3.77) cm(6).s(-1).

Analysis of Instabilities in Non-Equilibrium Plasmas

Plasma instabilities with charged particle production processes in non-equilibrium plasma are analysed. A criterion on plasma instabilities is deduced by 6rst-order perturbation theory. The relationship between plasma instabilities and certain factors (degree of non-equilibrium in Plasma, the electron attachment rate coefficient and electron temperature) are described.

在激波波面中氧分子的非平衡离解

对强激波作用下双原子分子振动与离解耦合的非平衡离解过程进行了理论计算.本工作的特点是将计算起点建立在分子基本参数上,采用主方程理论处理振动与离解的耦合,振动跃迁几率用SSH理论计算,在离解限附近考虑多量子数跃迁并计及原子复合的影响.对O2-Ar体系,计算给出了在正激波后O2分子振动能级分布、振动弛豫时间、离解孕育时间、离解产物浓度、离解速率系数等物理量随时间的演化.计算结果分别与Camac和Wray的实验相符.计算显示,在激波作用的后期,有准稳态的振动能级布居分布.计算结果显示,Park模型低估了非平衡离解速率系数,Hansen模型则高估了非平衡离解速率系数.

Optical properties of zirconia-titania-ORMOSIL films for temperature tuning distributed feedback waveguide lasers

The zirconia-titania-ORMOSIL waveguide thin films with considerable optical quality were prepared by the sol-gel process. The refractive index (n) and the extinction coefficient (k) were determined by a scanning ellipsometer. Wavelength tunable output of distributed feedback waveguide lasing was demonstrated in Rhodamine 6G doped ZrO2 TiO2-ORMOSIL thin films by varying the temperature, and about 5.5 nm wavelength tuning range was achieved around the emission wavelength of 599 nm. The thermal-optic coefficient (dn/dT) of the active ZrO2-TiO2-ORMOSIL films was deduced. (c) 2005 Elsevier B.V. All rights reserved.

高硅氧发光玻璃的制备及其荧光性能

abstract {Silica glass is an attractive host matrix for the emission ions of rare earth and transition metal ions because it has small thermal expansion coefficient, strong thermal resistance, large fracture strength and good chemical durability and so on. However, a major obstacle to using it as the host matrix is a phenomenon of concentration quenching. In this paper, we introduces a novel method to restrain the concentration quenching by using a porous glass with SiO₂ content > 95% (in mass) and prepare intense fluorescence high-SiO₂ glasses and high-SiO₂ laser glass. The porous glass with high-SiO₂ content was impregnated with rare-earth and transition metal ions, and consequently sintered into a compact non-porous glass in reduction or oxidization atmospheres. Various intense fluorescence glasses with high emission yields, a vacuum ultraviolet-excited intensely luminescent glass, high silica glass containing high concentration of Er³⁺ ion, ultrabroad infrared luminescent Bi-doped high silica glass and Nd³⁺-doped silica microchip laser glass were obtained by this method. The porous glass is also favorable for co-impregnating multi-active-ions. It can bring effective energy transferring between various active ions in the glass and increases luminescent intensity and extend range of excitation spectrum. The luminescent active ions-doped high-SiO₂ glasses are potential host materials for high power solid-state lasers and new transparent fluorescence materials.}

不同氧磷比对磷酸盐包边玻璃性质的影响规律

包边技术是提高大尺寸激光玻璃饱和增益系数的关键技术。采用传统的方法熔制玻璃,研究了 P2O5含量对 P2O5-Al2O3-B2O3-CuCl-Na2O-ZnO磷酸盐包边玻璃的折射率、热膨胀系数、玻璃转变温度、膨胀软化温度以及化学稳定性的影响。结果表明：当 P2O5的摩尔分数为 60%左右,玻璃样品具有最高的折射率（1.522 0）、最低的玻璃转变温度（352.4 ℃）、较好的化学稳定性[0.52 mg/（cm^2·d）]和适宜的热膨胀系数（128.427×10^-7/℃）,是用作钕磷酸盐激光玻璃硬包边的理

Crystal growth and properties of Yb : FAP laser crystal

A large and transparent Yb:FAP crystal with dimensions up to circle divide 30 mm x 85 mm has been grown by the Czochralski method. The preparation of the raw material has been investigated. X-ray power diffraction studies of Yb:FAP crystal confirm that the as-grown crystal is isostructural with the FAP crystal. The crystalline quality has been studied using X-ray rocking curve analysis. The segregation coefficient of Yb3+ in the Yb:FAP crystal has been also determined. Linear thermal expansion coefficients in [001] and [100] directions have been measured in the 30-800 degrees C temperature range. (c) 2005 Elsevier B.V. All rights reserved.

γ-LiAlO2晶体生长、改性和热学性质研究

采用快速提拉法生长出了透明、完整的γ-LIAlO2晶体，但是晶体的高熔点和易挥发性限制了γ-LiAlO2晶体质量．采用气相传输平衡法（vapor transport equilibration technique，VTE）工艺对晶体改性，半高宽（FWHM）值从116．9arcsec降至44．2arcsec，继续升高VTE处理温度至1300℃，FWHM值反而升高至55．2arcsec．快速提拉法生长出来晶体，[100]方向和[001]方向的热膨胀系数分别为17．2398×10^-6／K，10．7664×10

武汉东湖透明薄皮溞的捕食效率

本文在室内模拟自然水温研究了东湖透明薄皮溞(Leptodora Kindti)对优势枝角类短尾秀体溞(Diaphanosoma brachyurum)和微型裸腹溞(Moina micrura)的捕食效率。实验结果表明,在17℃和21℃时透明薄皮溞对短尾秀体溞的捕食率系数(predation rate coefficient)或称滤过率(clearance rate)分别为15.9和18.2mL predator~(-1)day~(-1)。17℃时透明薄皮溞对微型裸腹溞的捕食率系数为30.1mL preda

Fiber Bragg grating pressure sensor with ultrahigh sensitivity and reduced temperature sensitivity

A fiber Bragg grating (FBG) pressure sensing scheme based on a flat diaphragm and an L-shaped lever is presented. An L-shaped lever transfers the pressure-induced defection of the flat diaphragm to the axial elongation of the FBG. The curve where the L-shaped lever contacts the diaphragm is a segment of an Archimedes spiral, which is used to enhance the responsivity. Because the thermal expansion coefficient of the quartz-glass L-shaped lever and the steel sensor shell is different, the temperature effect is compensated for by optimizing the dimension parameters. Theoretical analysis is presented, and the experimental results show that an ultrahigh pressure responsivity of 244 pm/kPa and a low temperature responsivity of 2.8 pm/degrees C are achieved. (c) 2009 Society of Photo-Optical Instrumentation Engineers. [DOI 10.1117/1.3081058]

Temperature-independent fiber Bragg grating strain sensor using bimetal cantilever

A new packaged fiber Bragg grating using bimetal cantilever beam as the strain agent is presented. The grating is two-point attached on one specific surface of the bimetal beam which consists of two metallic material with different thermal-expansion coefficient. Thereby the grating can be compressed or stretched along with the cantilever beam while temperature varies and temperature compensation can be realized. At the same time, grating chirping can be avoided for the particular attaching method. Experiment results demonstrated that the device is able to automatically compensate temperature induced wavelength shift. The temperature dependence of Bragg wavelength reduced to -0.4 pm/degrees C over the temperature range from -20 to 60 degrees C. This fiber grating package technique is cost effective and can be used in strain sensing. (c) 2005 Elsevier Inc. All rights reserved.

Characterization of stress induced in SOS and Si/gamma-Al2O3/Si heteroepitaxial thin films by Raman spectroscopy

Raman spectroscopy technique has been performed to investigate the stress induced in as-grown silicon-on-sapphire (SOS), solid-phase-epitaxy (SPE) re-grown SOS, and Si/gamma-Al2O3/Si double-heteroepitaxial thin films. It was demonstrated that the residual stress in SOS film, arising from mismatch and difference of thermal expansion coefficient between silicon and sapphire, was reduced efficiently by SPE process, and that the stress in Si/gamma-Al2O3/Si thin film is much smaller than that of as-grown SOS and SPE upgraded SOS films. The stress decrease for double heteroepitaxial film Si/gamma-Al2O3/Si mainly arises from the smaller lattice mismatching of 2.4% between silicon top layer and the gamma-Al2O3/Si epitaxiial composite substrate, comparing with the large lattice mismatch of 13% for SOS films. It indicated that gamma-Al2O3/Si as a silicon-based epitaxial substrate benefits for reducing the residual stress for further growth of silicon layer, compared with on bulk sapphire substrate. (c) 2005 Elsevier B.V. All rights reserved.

Study on surface morphology of GaN growth by MOCVD on GaN/Si(111) template

The surface morphology of GaN grown by MOCVD on GaN/Si template was studied. Rough morphology and deep pinhole defects on some surface areas of the samples were observed and studied. The formation of rough morphology is possibly related to Ga-Si alloy produced due to poor thermal stability of template at high temperature. The deep pinhole defects generated are deep down to the surface of MBE-grown GaN/Si template. The stress originated from the large thermal expansion coefficient difference between GaN and Si may be related to the formation of the pinhole defects. The surface morphology of the GaN can be improved by optimizing the GaN/Si template and decreasing the growth temperature.

Study of GaN thin films grown on vicinal SiC (0001) substrates by molecular beam epitaxy

A detailed study of the characteristics of undoped GaN films, grown on either vicinal or nominal flat SiC (0001) substrates by molecular beam epitaxy, has been carried out using photoluminescence and Raman scattering techniques. The I I K photoluminescence spectra of the GaN film grown on the vicinal SiC (0001) substrate show a strong and sharp near-bandgap peak (full width at half maximum (FWHM) similar to 16 meV). This feature contrasts with that of the GaN film grown on the nominal flat SiC (0001) substrate where the I I K photoluminescence spectra exhibit the near-bandgap peak (FWHM similar to 25 meV) and the intensity is approximately seven times weaker than that of the vicinal film sample. The redshift of the near-bandgap peak associated with excitons bound to shallow donors is related to the stress caused by both the lattice mismatch and the thermal expansion coefficient difference between GaN and SiC substrates. The measured thermal activation energy of the shallow donor of 33.4 meV is determined by using an Arrhenius plot of the near-bandgap luminescence versus I IT from the slope of the graph at high temperature. The temperature dependence of the FWHM of the near-bandgap luminescence has also been studied. The Raman scattering measurements from the vicinal film reveal that the E-2 phonon peak is strengthened and the A(1)(LO) phonon peak is shifted towards the low-frequency side with enhanced intensity, in comparison to that from the nominal flat film, suggesting a reduction in the density of defects and a lower free carrier concentration in the vicinal GaN film.