120 resultados para Step Uniformity


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A two-step digit-set-restricted modified signed-digit (MSD) adder based on symbolic substitution is presented. In the proposed addition algorithm, carry propagation is avoided by using reference digits to restrict the intermediate MSD carry and sum digits into {(1) over bar ,0} and {0, 1}, respectively. The algorithm requires only 12 minterms to generate the final results, and no complementarity operations for nonzero outputs are involved, which simplifies the system complexity significantly. An optoelectronic shared content-addressable memory based on an incoherent correlator is used for experimental demonstration. (c) 2005 Society of Photo-Optical Instrumentation Engineers.

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The formation of the non-uniformity of the non-volatile volume grating in doubly doped LiNbO3 crystals is studied in detail. We find that the non-uniformity of the grating is mainly caused by strong ultraviolet light absorption, and the average saturation space-charge field is small and the diffraction efficiency is low as a result of the non-uniformity of the grating. In order to optimize the uniformity of the grating, we propose the recording scheme by using two sensitizing beams simultaneously from the two opposite sides of the crystals. Theoretical simulations and experimental verifications are performed. Results show that the well uniformed grating with high diffraction efficiency can be obtained by using this optimization scheme. (c) 2004 Elsevier B.V. All rights reserved.

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A novel phase-step calibration technique is presented on the basis of a two-run-times-two-frame phase-shift method. First the symmetry factor M is defined to describe the distribution property of the distorted phase due to phase-shifter miscalibration; then the phase-step calibration technique, in which two sets of two interferograms with a straight fringe pattern are recorded and the phase step is obtained by calculating M of the wrapped phase map, is developed. With this technique, a good mirror is required, but no uniform illumination is needed and no complex mathematical operation is involved. This technique can be carried out in situ and is applicable to any phase shifter, whether linear or nonlinear. (c) 2006 Optical Society of America.

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An FFT-based two-step phase-shifting (TPS) algorithm is described in detail and implemented by use of experimental interferograms. This algorithm has been proposed to solve the TPS problem with random phase shift except pi. By comparison with the visibility-function-based TPS algorithm, it proves that the FFT-based algorithm has obvious advantages in phase extracting. Meanwhile, we present a pi-phase-shift supplement to the TPS algorithm, which combines the two interferograms and demodulates the phase map by locating the extrema of the combined fringes after removing the respective backgrounds. So combining this method and FFT-based one, one could really implement the TPS with random phase shift. Whereafter, we systematically compare the TPS with single-interferogram analysis algorithm and conventional three-step phase-shifting one. The results demonstrate that the FFT-based TPS algorithm has a satisfactory accuracy. At last, based on the polarizing interferometry, a schematic setup of two-channel TPS interferometer with random phase shift is suggested to implement the simultaneous collection of interferograms. (c) 2007 Elsevier GrnbH. All rights reserved.

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A scheme using a lens array and the technique of spectral dispersion is presented to improve target illumination uniformity in laser produced plasmas. Detailed two-dimensional simulation shows that a quasi-near-field target pattern, of steeper edges and without side lobes, is achieved with a lens array, while interference stripes inside the pattern are smoothed out by the use of the spectral dispersion technique. Moving the target slightly from the exact focal plane of the principal focusing lens can eliminate middle-scale-length intensity fluctuation further. Numerical results indicate that a well-irradiated laser spot with small nonuniformity and great energy efficiency can be obtained in this scheme. (c) 2007 American Institute of Physics.

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Some results of an investigation on the layer thickness uniformity of glancing angle deposition are presented. A zirconia monolayer has been deposited by glancing angle deposition to analyze the layer thickness uniformity. The experimental results indicate that the thickness variation over the substrate is less than 0. 1%, which is considered as good uniformity. It is found that the non-uniformity of experimental results is larger than that of the theoretical results. (c) 2005 Elsevier Ltd. All rights reserved.

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Three groups of gynogenetic diploid bighead carp were successfully obtained by means of artificial gynogenesis. The activation rates of gynogenesis varied from 75.9% to 98.8%, and the frequency of spontaneous diploidization was around 0.4%. Over 2000 normally gynogenetic diploid fry were obtained in three gynogenetic groups. The haploid karyotype consisted of nine metacentric, 12 submetacentric, three subtelocentric chromosomes and 45 arms. The chromosome number was 48 from gynogenetic diploid. The results showed that the genetic material of offspring was maternal. The aneuploid hybrid embryos of bighead carp and Xingguo red common carp with chromosome numbers ranging from 28 to 73 did not survive post hatch, likely the result of incompatibility between the nucleus and the cytoplasm of two parents. Sixty RAPD primers from three groups were used for total DNA amplification of gynogenetic offspring, maternal and 'paternal' fish. A total of 451 bands were amplified from three kinds of samples above. From maternal bighead carp, 256 bands were amplified; however, there were 251 shared bands between maternal and gynogenetic bighead carp. From artificial gynogenetic offspring, two 'paternal' DNA segments without an expression function were found. An UPGMA tree showed that gynogenetic offspring were closely clustered and the genetic identity among them was very high (0.956).

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The growth and toxin content of the dinoflagellate Alexandrium tamarense ATHK was markedly affected by culture methods. In early growth phase at lower cell density static or mild agitation methods were beneficial to growth, but continuous agitation or aeration, to some extent, had an adverse effect on cell growth. Static culture in 2 L Erlenmeyer flasks had the highest growth rate (0.38 d(-1)) but smaller cell size compared with other culture conditions. Cells grown under aerated conditions possessed low nitrogen and phosphorus cell yields, namely high N and P cell-quota. At day 18, cells grown in continuous agitated and 1 h aerated culture entered the late stationary phase and their cellular toxin contents were higher (0.67 and 0.54 pg cell(-1)) compared with cells grown by other culture methods (0.27-0.49 pg cell(-1)). The highest cell density and cellular toxin content were 17190 cells mL(-1) and 1.26 pg cell(-1) respectively in an airlift photobioreactor with two-step culture. The results indicate that A. tamarense could be grown successfully in airlift photobioreactor by a two-step culture method, which involved cultivating the cells statically for 4 days and then aerating the medium. This provides an efficient way to enhance cell and toxin yield of A. tamarense.

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A two-step approach of preparation for SiGe/Si heterogeneous nanostructures, which combined with ultra-high vacuum chemical deposition and electrochemical anodization techniques, is demonstrated. Uniformly distributed nanostructures with a quite uniform distribution of size and morphology are obtained. A strong room-temperature photoluminescence from the nanostructures was observed with a narrow full-width at half-maximum of around 110 meV. The possible origins of the two main peaks at around 1.6 and 1.8 eV have been discussed in detail. The two-step approach is proved to be a promising method to fabricate new Si-based optoelectronic materials. (C) 2009 Elsevier B.V. All rights reserved.

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Spin splitting of the AlyGa1-yAs/GaAs/AlxGa1-xAs/AlyGa1-yAs (x not equal y) step quantum wells (QWs) has been theoretically investigated with a model that includes both the interface and the external electric field contribution. The overall spin splitting is mainly determined by the interface contribution, which can be well manipulated by the external electric field. In the absence of the electric field, the Rashba effect exists due to the internal structure inversion asymmetry (SIA). The electric field can strengthen or suppress the internal SIA, resulting in an increase or decrease of the spin splitting. The step QW, which results in large spin splitting, has advantages in applications to spintronic devices compared with symmetrical and asymmetrical QWs. Due to the special structure design, the spin splitting does not change with the external electric field.

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By means of the transfer matrix technique, interface-induced Rashba spin splitting of conduction subbands in Al0.3Ga0.7As/GaAs/AlxGa1-xAs/Al0.3Ga0.7As step quantum wells which contain internal structure inversion asymmetry introduced by the insertion of AlxGa1-xAs step potential is investigated theoretically in the absence of electric field and magnetic field. The dependence of spin splitting on the well width, step width and Al concentration is investigated in detail. We find that the sign of the first excited subband spin splitting changes with well width and step width, and is opposite to that of the ground subband under certain conditions. The sign and strength of the spin splitting are shown to be sensitive to the components of the envelope function at three interfaces. Copyright (C) EPLA, 2009

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By the method of finite difference, the anisotropic spin splitting of the AlxGa1-xAs/GaAs/AlyGa1-yAs/AlxGa1-xAs step quantum wells (QWs) are theoretically investigated considering the interplay of the bulk inversion asymmetry and structure inversion asymmetry induced by step quantum well structure and external electric field. We demonstrate that the anisotropy of the total spin splitting can be controlled by the shape of the QWs and the external electric field. The interface related Rashba effect plays an important effect on the anisotropic spin splitting by influencing the magnitude of the spin splitting and the direction of electron spin. The Rashba spin splitting presents in the step quantum wells due to the interface related Rashba effect even without external electric field or magnetic field.

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We study theoretically the low-temperature electronic transport property of a straight quantum wire under the irradiation of a finite-range transversely polarized external terahertz (THz) electromagnetic (EM) field. Using the free-electron model and the scattering matrix approach, we show an unusual behaviour of the electronic transmission of this system. A sharp step-structure appears in the electronic transmission probability as the EM field strength increases to a threshold value when a coherent EM field is applied. We demonstrate that this effect physically comes from the inelastic scattering of electrons with lateral photons through intersubband transitions.