Space-charge-limited currents in GaN Schottky diodes

Unusual dark current voltage (I-V) characteristics were observed in GaN Schottky diodes. I-V characteristics of the GaN Schottky diodes were measured down to the magnitude of 10(-14) A. Although these Schottky diodes were clearly rectifying, their I-V characteristics were non-ideal which can be judged from the non-linearity in the semi-logarithmic plots. Careful analysis of the forward bias I-V characteristics on log-log scale indicates space-charge-limited current (SCLC) conduction dominates the current transport in these GaN Schottky diodes. The concentration of the deep trapping centers was estimated to be higher than 10(15) cm(-3). In the deep level transient spectra (DLTS) measurements for the GaN Schottky diodes, deep defect levels around 0.20 eV below the bottom of the conduction band were identified, which may act as the trapping centers. The concentration of the deep centers obtained from the DLTS data is about 5 x 10(15) cm(-3). SCLC measurements may be used to probe the properties of deep levels in wide bandgap GaN-AlGaN compound semiconductors, as is the case with insulators in the presence of trapping centers. (c) 2005 Elsevier Ltd. All rights reserved.

Semi-insulating GaAs grown in outer space

A semi-insulating GaAs single crystal ingot was grown in a recoverable satellite, within a specially designed pyrolytic boron nitride crucible, in a power-traveling furnace under microgravity. The characteristics of a compound semiconductor single crystal depends fundamentally on its stoichiometry, i.e. the ration of two types of atoms in the crystal. a practical technique for nondestructive and quantitative measuring stoichiometry in GaAs single crystal was used to analyze the space-grown GaAs single crystal. The distribution of stoichiometry in a GaAs wafer was measured for the first time. The electrical, optical and structural properties of the space-grown GaAs crystal were studied systematically, Device fabricating experiments prove that the quality of field effect transistors fabricated from direct ion-implantation in semi-insulating GaAs wafers has a close correlation with the crystal's stoichiometry. (C) 2000 Elsevier Science S.A. All rights reserved.

One-dimensional modulation instability of broad optical beams in biased photorefractive-photovoltaic crystals under steady-state conditions

We present a comprehensive study of the one-dimensional modulation instability of broad optical beams in biased photo refractive-photovoltaic crystals under steady-state conditions. We obtain the one-dimensional modulation instability growth rate by globally treating the space-charge field and by considering distinction between values of Eo in nonlocal effects and local effects in the space-charge field, where Eo is the field constant correlated with terms in the space-charge field, which depends on the external bias field, the bulk photovoltaic effect, and the ratio of the optical beam's intensity to that of the dark irradiance. The one-dimensional modulation instability growth rate in local effects can be determined from that in nonlocal effects. When the bulk photovoltaic effect is neglectable, irrespective of distinction between values of Eo in nonlocal effects and local effects in the space-charge field, the one-dimensional modulation instability growth rates in nonlocal effects and local effects are those of broad optical beams studied previously in biased photorefractive-nonphotovoltaic crystals. When the external bias field is absent, the one-dimensional modulation instability growth rates in nonlocal effects and local effects predict those of broad optical beams in open- and closed-circuit photorefractive-photovoltaic crystals. (c) 2004 Elsevier B.V. All rights reserved.

Semi-insulating GaAs grown in outer space

A semi-insulating GaAs single crystal ingot was grown in a recoverable satellite, within a specially designed pyrolytic boron nitride crucible, in a power-traveling furnace under microgravity. The characteristics of a compound semiconductor single crystal depends fundamentally on its stoichiometry, i.e. the ration of two types of atoms in the crystal. a practical technique for nondestructive and quantitative measuring stoichiometry in GaAs single crystal was used to analyze the space-grown GaAs single crystal. The distribution of stoichiometry in a GaAs wafer was measured for the first time. The electrical, optical and structural properties of the space-grown GaAs crystal were studied systematically, Device fabricating experiments prove that the quality of field effect transistors fabricated from direct ion-implantation in semi-insulating GaAs wafers has a close correlation with the crystal's stoichiometry. (C) 2000 Elsevier Science S.A. All rights reserved.

Surface modelling of soil pH

In addition to classical methods, namely kriging, Inverse Distance Weighting (IDW) and splines, which have been frequently used for interpolating the spatial patterns of soil properties, a relatively more accurate surface modelling technique is being developed in recent years, namely high accuracy surface modelling (HASM). It has been used in the numerical tests, DEM construction and the interpolation of climate and ecosystem changes. In this paper, HASM was applied to interpolate soil pH for assessing its feasibility of soil property interpolation in a red soil region of Jiangxi Province, China. Soil pH was measured on 150 samples of topsoil (0-20 cm) for the interpolation and comparing the performance of HASM, kriging. IDW and splines. The mean errors (MEs) of interpolations indicate little bias of interpolation for soil pH by the four techniques. HASM has less mean absolute error (MAE) and root mean square error (RMSE) than kriging, IDW and splines. HASM is still the most accurate one when we use the mean rank and the standard deviation of the ranks to avoid the outlier effects in assessing the prediction performance of the four methods. Therefore, HASM can be considered as an alternative and accurate method for interpolating soil properties. Further researches of HASM are needed to combine HASM with ancillary variables to improve the interpolation performance and develop a user-friendly algorithm that can be implemented in a GIS package. (C) 2009 Elsevier B.V. All rights reserved.

Configuration-dependent diffusion can shift the kinetic transition state and barrier height of protein folding

We show that diffusion can play an important role in protein-folding kinetics. We explicitly calculate the diffusion coefficient of protein folding in a lattice model. We found that diffusion typically is configuration- or reaction coordinate-dependent. The diffusion coefficient is found to be decreasing with respect to the progression of folding toward the native state, which is caused by the collapse to a compact state constraining the configurational space for exploration. The configuration- or position-dependent diffusion coefficient has a significant contribution to the kinetics in addition to the thermodynamic free-energy barrier. It effectively changes (increases in this case) the kinetic barrier height as well as the position of the corresponding transition state and therefore modifies the folding kinetic rates as well as the kinetic routes. The resulting folding time, by considering both kinetic diffusion and the thermodynamic folding free-energy profile, thus is slower than the estimation from the thermodynamic free-energy barrier with constant diffusion but is consistent with the results from kinetic simulations. The configuration- or coordinate-dependent diffusion is especially important with respect to fast folding, when there is a small or no free-energy barrier and kinetics is controlled by diffusion.Including the configurational dependence will challenge the transition state theory of protein folding.

Crystallization and characterization of substoichiometric compound (W0.5Al0.5)C-0..5 obtained by solid-state reaction

(W0.5Al0.5)C-0.5 substoichiometric compound is synthesized by a combination of mechanical milling and high-pressure reactive sintering. X-ray diffraction is used to monitor the phase changes and crystallization of (W0.5Al0.5) C-0.5 during the whole reaction process. As a result, (W0.5Al0.5) C-0.5 is identified as the hexagonal WC-type belonging to the P-6m2 space group (No. 187), and the lattice parameters of (W0.5Al0.5)C-0.5 are calculated to be a = 2.907 (1) angstrom, c = 2.838 (1) angstrom, which are very similar to those of WC even if there are approximately 50 pct carbon vacancies in the cell of (W0.5Al0.5)C-0.5 as compared with WC. The substoichiometric (W0.5Al0.5)C-0.5 compound has a Vickers microhardness of 2385 +/- 70 kg mm(-2), which is as high as that of WC, while its density is far lower than that of WC.

Determination of electron mobility in a blue-emitting alternating block copolymer by space-charge-limited current measurements

In this communication we analyse current versus voltage data obtained using one carrier injection at metal/polymer/metal structures, The used polymer is a soluble blue-emitting alternating block copolymer, Our experimental results demonstrate that the electron current is limited by a large amount of traps with exponential energy distribution in the copolymer. The electron ;mobility of 5.1 x 10(-10) cm(2)/V s is directly determined by space-charge-limited current measurements. The electron mobility is at least three orders of magnitude smaller than that for holes in the copolymer. (C) 1999 Elsevier Science Ltd. All rights reserved.

The intermolecular coupling through space for stacked high spin molecules

Intermolecular ferromagnetic interactions in two stacking models for the dimer of high spin molecules are investigated by means of AM1-CI approach. It is shown that the stability of high spin ground state versus low spin state can be simply traced back to the number and the extent of atoms with reversed signs of pi-spin density in neighboring molecules coupled to each other in shortest distance.

THEORY OF STEADY-STATE CURRENT AT MULTIPLE MICROCYLINDER ELECTRODES COUPLED WITH A PARALLEL PLANAR ELECTRODE

A novel device of multiple cylinder microelectrodes coupled with a parallel planar electrode was proposed. The feedback diffusion current at this device was studied using bilinear transformation of coordinates in the diffusion space, where lines of mass flux and equiconcentration are represented by orthogonal circular functions. The derived expression for the steady-state current shows that as the gap between cylindrical microelectrodes and planar electrode diminishes, greatly enhanced currents can be obtained with high signal-to-noise ratio. Other important geometrical parameters such as distance between adjacent microcylinders, cylinder radius, and number of microcylinders were also discussed in detail.