Investigation of the electrocatalytic effect of polyaniline on the redox reaction of 2,5-dimercapto-1,3,4-thiadiazole by cyclic voltammetry

Electrochemical polymerized polyaniline(PAn) film electrode was used to investigate the electrocatalytic effect of PAn on the electrochemical redox reaction of 2,5-dimercapto-1,3,4-thiadiazole (DMcT), PAn film electrode was electrochemically treated or immersed in DMcT solution before it was scanned in 1.0 mol/L HCl electrolyte. The cyclic voltammograms of PAn film electrode in 1.0 mol/L HCl solution changed with the above treatment, implying the electrocatalytic effect of PAn on the redox reaction of DMcT, The formation of electron-donor-acceptor adducts through the interaction between thiol or disulfide groups of DMcT and amine or imine groups of PAn during the treatment was probably the reason of the catalysis, The electrochemical properties of the adduct were different from those of PAn and DMcT, The adduct possessed a higher electrochemical activity and a better electrochemical reversibility than DMcT or PAn used alone.

Synthesis and characterization of side chain liquid crystal M5MPP/MMEANB copolymers containing NLO active group

A new series of side chain liquid crystal polymers based on the backbone of polymethacrylate containing 4-nitroazobenzene and 4-methoxybiphenyl group as side chain mesogen were prepared and characterized, FTIR, H-1 NMR, POM and WAXD were used to study the structure, phase behavior and mesophase texture of this series of SCLC copolymers. The researches show that polymer PM5MPP and copolymer M5MPP/MMEANB are enantiotropic liquid crystalline polymers, but polymer PMMEANB has no liquid crystalline properties. DSC results showed that the thermal stability of the mesophase of this series of copolymers was enhanced by the existence of intermolecular electron donor-acceptor interaction. It was found that the temperature range of the mesophase of the copolymers was broadened with increasing 4-nitroazobenzene units. The focal-conic texture observed by POM indicated that this series of the copolymers possessed the characteristics of smectic liquid crystal.

Fluorescence and aggregation behavior of a polyimide in solutions

The UV-visible absorption and fluorescence spectra of a soluble polyimide, YS-30, in several organic solvents were measured over a wide range of concentration. The experimental results show that there exist both intramolecular and intermolecular electron donor acceptor interactions for YS-30 molecules. The fluorescence behavior of YS-30 in N,N-dimethylacetamide and in chloroform solutions is similar in general, except that its ground-state intermolecular charge transfer emission is more obvious in N,N-dimethylacetamide solution. This difference is attributed to the greater extent of disruption of the chain packing by solvent or/and the more efficient radiationless energy dissipation process from the excited state complexes to chloroform. The intensity ratio of intermolecular charge transfer emission to intramolecular charge transfer emission is used to characterize the state of aggregation of YS-30 molecules in solutions. The plot of this ratio versus concentration indicates the existence of two critical concentrations. It is also found from the same plot that the decrease of coil size is very pronounced during the initial stage of shrinkage.

Synthesis and characterization of aromatic liquid crystalline poly(ester-imide)s derived from an imidodicarboxylic acid

A new class of liquid crystalline poly(ester-imide)s was synthesized by melt polycondensation. The basic physical properties of the resulting polymers were investigated by differential scanning calorimetry (d.s.c.), wide-angle X-ray diffraction (WAXD), polarized light microscopy, scanning electron microscopy (SEM), thermogravimetric analysis (t.g.a.), and rheological and mechanical testing. All of these poly(ester-imide)s were amorphous, as reflected by the results obtained from the WAXD and d.s.c. studies. Characterization and comparison of these poly(ester-imide)s with the corresponding polyesters suggested that the introduction of imide groups into the polyester chain is favourable for the formation of liquid crystalline phases. These results, together with the rheological studies, suggested that there existed a form of strong inter- or intramolecular electron donor-acceptor interaction which played a significant role in the liquid crystalline properties of the poly(ester-imide)s. The polymer products thus obtained exhibited good mechanical properties, with flexural strengths and moduli as high as 174 MPa and 6.9 GPa, respectively. The morphology of the fracture surfaces of extruded rod samples showed a sheet-like structure which consisted of ribbons and fibres oriented along the flow direction. The glass transition temperatures and thermal stabilities of the polymers were improved by the incorporation of imide groups. Copyright (C) 1996 Elsevier Science Ltd.

Second-harmonic generation in Ge20As25S55 glass irradiated by an electron beam

Second-harmonic generation was observed in Ge(20)AS(25)S(55) chalcogenide glass irradiated by an electron beam. The second-harmonic intensity increased with increasing electron-beam current and accelerating voltage. The second-harmonic generation in Ge20As25S55 glass was caused by the space-charge electrostatic field that was generated by irradiation of an electron beam. Second-order nonlinearity chi ((2)) as great as 0.8 pm/V was obtained. The results of measurements of thermally stimulated depolarization current indicated that the glass was poled in the thin layers of its surface (several micrometers) and that the nonlinearity was stable. (C) 2001 Optical Society of America.

Generation of periodic ultrashort electron bunches and strongly asymmetric ion Coulomb explosion in nanometer foils interacting with ultra-intense laser pulse

The interaction of a linearly polarized intense laser pulse with an ultrathin nanometer plasma layer is investigated to understand the physics of the ion acceleration. It is shown by the computer simulation that the plasma response to the laser pulse comprises two steps. First, due to the vxB effect, electrons in the plasma layer are extracted and periodic ultrashort relativistic electron bunches are generated every half of a laser period. Second, strongly asymmetric Coulomb explosion of ions in the foil occurs due to the strong electrostatic charge separation, once the foil is burnt through. Followed by the laser accelerated electron bunch, the ion expansion in the forward direction occurs along the laser beam that is much stronger as compared to the backward direction. (c) 2008 American Institute of Physics.

A new strategy of enhancing two-photon absorption in benzothiazole-containing fluorene molecules: Introduction of auxiliary donor-acceptor effects

A series of benzothiazole-containing fluorene molecules have been designed and their one- and two-photon absorption properties have been investigated theoretically by using the ZINDO method. The effects of electron-excessive/deficient heterocyclic bridges as auxiliary donors (auxD)/acceptors (auxA) on TPA cross-sections were studied. The results show that the molecules with D-pi-auxA-A, D-aux D-pi-A, or D-auxD-pi-auxA-A structure types have large TPA cross-section, which can be a valuable strategy in the design of two-photon absorption materials. Also, a linear relationship between the first hyperpolarizability and the TPA cross-section is observed. (c) 2006 Elsevier B.V. All rights reserved.

Spin-orbit splitting of a hydrogenic donor impurity in GaAs/GaAlAs quantum wells

The electronic states of a hydrogenic donor impurity in GaAs/GaAlAs quantum wells are investigated theoretically in the framework of effective-mass envelope function theory, including the effect of Rashba spin-orbit coupling. The splits of electron energy levels are calculated. The results show that (1) the split energy of the excited state is larger than that of the ground state; (2) the split energy peak appears as the GaAs well width increases from zero; and (3) the maximum split energy reaches about 1.6 meV. Our results are useful for the application of Rashba spin-orbit coupling to photoelectric devices. (c) 2008 American Institute of Physics.

Properties of AlyGa1-yN/AlxGa1-xN/AlN/GaN Double-Barrier High Electron Mobility Transistor Structure

Electrical properties of AlyGa1-yN/AlxGa1-xN/AlN/GaN structure are investigated by solving coupled Schrodinger and Poisson equation self-consistently. Our calculations show that the two-dimensional electron gas (2DEG) density will decrease with the thickness of the second barrier (AlyGa1-yN) once the AlN content of the second barrier is smaller than a critical value y(c), and will increase with the thickness of the second barrier (AlyGa1-yN) when the critical AlN content of the second barrier y(c) is exceeded. Our calculations also show that the critical AlN content of the second barrier y(c) will increase with the AlN content and the thickness of the first barrier layer (AlxGa1-xN).

Magnetointersubband oscillations of the two-dimensional electron gas in AlxGa1-xN/GaN heterostructures

Shubmkov-de Haas (SdH) measurements are performed over a temperature range of 1.5-20K in AL(0.22)Ga(0.78)N/GaN heterostructures with two subbands occupied. In addition to an intermodulation between two sets of SdH oscillations from the first and second subbands, a beating in oscillatory magnetoresistance at 12K is observed, due to the mixing of the first subband SdH oscillations and 'magnetointersubband' (MIS) oscillations. A phase shift of pi between the SdH and MIS oscillations is also clearly identified. Our experimental results, i.e. that the SdH oscillations dominate at low temperature and MIS oscillations dominate at high temperature, fully comply with the expected behaviour of MIS oscillations.

Theoretical analysis about the influence of channel layer thickness on the 2D electron gas and its distribution in InP-based high-electron-mobility transistors

The principle of high-electron-mobility transistor (HEMT) and the property of two-dimensional electron gas (2DEG) have been analyzed theoretically. The concentration and distribution of 2DEG in various channel layers are calculated by numerical method. Variation of 2DEG concentration in different subband of the quantum well is discussed in detail. Calculated results show that sheet electron concentration of 2DEG in the channel is affected slightly by the thickness of the channel. But the proportion of electrons inhabited in different subbands can be affected by the thickness of the channel. When the size of channel lies between 20-25 nm, the number of electrons occupying the second subband reaches the maximum. This result can be used in parameter design of materials and devices.

Interplay between partial incoherence, partial inelasticity, resonance, and heterogeneity in long-range electron transfer and transport

A generalized scattering matrix formalism is constructed to elucidate the interplay of electron resonance, coherence, dephasing, inelastic scattering, and heterogeneity, which play important roles in the physics of long-range electron transfer/transport. The theory consists of an extension of the standard Buttiker phase-breaking model and an analytical expression of the electron transmission coefficient for donor-bridge-acceptor systems with arbitrary length and sequence. The theory incorporates the following features: Dephasing-assisted off-resonance enhancement, inelasticity-induced turnover, resonance enhancement and its dephasing-induced suppression, dephasing-induced smooth superexchange-hopping transition, and heterogeneity effects. (C) 2002 American Institute of Physics.

Residual donors and compensation in metalorganic chemical vapor deposition as-grown n-GaN

In our recent report, [Xu , Appl. Phys. Lett. 76, 152 (2000)], profile distributions of five elements in the GaN/sapphire system have been obtained using secondary ion-mass spectroscopy. The results suggested that a thin degenerate n(+) layer at the interface is the main source of the n-type conductivity for the whole film. The further studies in this article show that this n(+) conductivity is not only from the contribution of nitride-site oxygen (O-N), but also from the gallium-site silicon (Si-Ga) donors, with activation energies 2 meV (for O-N) and 42 meV (for Si-Ga), respectively. On the other hand, Al incorporated on the Ga sublattice reduces the concentration of compensating Ga-vacancy acceptors. The two-donor two-layer conduction, including Hall carrier concentration and mobility, has been modeled by separating the GaN film into a thin interface layer and a main bulk layer of the GaN film. The bulk layer conductivity is to be found mainly from a near-surface thin layer and is temperature dependent. Si-Ga and O-N should also be shallow donors and V-Ga-O or V-Ga-Al should be compensation sites in the bulk layer. The best fits for the Hall mobility and the Hall concentration in the bulk layer were obtained by taking the acceptor concentration N-A=1.8x10(17) cm(-3), the second donor concentration N-D2=1.0x10(18) cm(-3), and the compensation ratio C=N-A/N-D1=0.6, which is consistent with Rode's theory. Saturation of carriers and the low value of carrier mobility at low temperature can also be well explained. (C) 2001 American Institute of Physics.

Shallow donor defect formation and its influence on semi-insulating indium phosphide after high temperature annealing with long duration

Fe-doped semi-insulating (SI) InP has become semi-conducting (SC) material completely after annealing at 900 V for 10 hours. Defects in the SC and SI InP materials have been studied by deep level transient spectroscopy (DLTS) and thermally stimulated current spectroscopy (TSC) respectively. The DLTS only detected Fe acceptor related deep level defect with significant concentration, suggesting the formation of a high concentration of shallow donor in the SC-InP TSC results confirmed the nonexistence of deep level defects in the annealed SI-InP. The results demonstrate a significant influence of the thermally induced defects on the electrical properties of SI-InP. The formation mechanism and the nature of the shallow donor defect have been discussed based on the results.

Self-consistent analysis of AlSb/InAs high electron mobility transistor structures

The influences of channel layer width, spacer layer width, and delta-doping density on the electron density and its distribution in the AlSb/InAs high electron mobility transistors (HEMTs) have been studied based on the self-consistent calculation of the Schrodinger and Poisson equations with both the strain and nonparabolicity effects being taken into account. The results show that, having little influence on the total two dimensional electron gas (2DEG) concentration in the channel, the HEMT's channel layer width has some influence on the electron mobility, with a channel as narrow as 100-130 angstrom being more beneficial. For the AlSb/InAs HEMT with a Te delta-doped layer, the 2DEG concentration as high as 9.1 X 10(12) cm(-2) can be achieved in the channel by enhancing the delta-doping concentration without the occurrence of the parallel conduction. When utilizing a Si delta-doped InAs layer as the electron-supplying layer of the AlSb/InAs HEMT, the effect of the InAs donor layer thickness is studied on the 2DEG concentration. To obtain a higher 2DEG concentration in the channel, it is necessary to use an InAs donor layer as thin as 4 monolayer. To test the validity of our calculation, we have compared our theoretical results (2DEG concentration and its distribution in different sub-bands of the channel) with the experimental ones done by other groups and show that our theoretical calculation is consistent with the experimental results.