Impact of laser-accelerated micron-size projectile on dense plasma

The impact of a laser-accelerated micron-size projectile on a dense plasma target is studied using two-dimensional particle-in-cell simulations. The projectile is first accelerated by an ultraintense laser. It then impinges on the dense plasma target and merges with the latter. Part of the kinetic energy of the laser-accelerated ions in the projectile is deposited in the fused target, and an extremely high concentration of plasma ions with a mean kinetic energy needed for fusion reaction is induced. The interaction is thus useful for laser-driven impact fusion and as a compact neutron source.

基于同步移相技术的1/4波片快轴方位角的实时测量

提出了一种基于同步移相技术的1/4波片快轴方位角的实时测量方法。由正交光栅、光阑、检偏器组和四象限探测器实现同步移相功能。检偏器组由4个不同方位角的检偏器组成。通过检偏器组的四束光束的光强由四象限探测器同时测量。1/4波片的快轴方位角由这四光束的光强得到。由于该方法不需旋转偏振器件，从而实现的1/4波片的快轴方位角的实时测量。

基于同步移相技术的1/4波片相位延迟量的快速测量

提出了一种基于同步移相技术的1/4波片相位延迟量的快速测量方法。由正交光栅、光阑、检偏器组和四象限探测器实现同步移相功能。检偏器组由4个不同方位角的检偏器组成。通过检偏器组的四束光束的光强由四象限探测器同时测量。1/4波片的相位延迟量由这四光束的光强得到。该方法中波片的快轴不需被事先确定。另外光源光强的波动对测量结果没有影响。通过实验验证了该方法的有效性。

Even aberration measurement of lithographic projection system based on optimized phase-shifting marks

In the present paper, we propose a novel method for measuring the even aberrations of lithographic projection optics by use of optimized phase-shifting marks on the test mask. The line/space ratio of the phase-shifting marks is optimized to obtain the maximum sensitivities of Zernike coefficients corresponding to even aberrations. Spherical aberration and astigmatism can be calculated from the focus shifts of phase-shifting gratings oriented at 0 degrees, 45 degrees, 90 degrees and 135 degrees at multiple illumination settings. The PROLITH simulation results show that, the measurement accuracy of spherical aberration and astigmatism obviously increase, after the optimization of the measurement mark. (C) 2008 Elsevier B.V. All rights reserved.

Characterization of a dissolved oxygen sensor made of plastic optical fiber coated with ruthenium-incorporated solgel

A dissolved oxygen sensor made of plastic optical fiber as the substrate and dichlorotris (1, 10-phenanthroline) ruthenium as a fluorescence indicator is studied. Oxygen quenching characteristics of both intensity and phase were measured; the obtained characteristics showed deviation from the linear relation described by the Stern-Volmer equation. A two-layer model is proposed to explain the deviation, and main parameters can be deduced with the model. (C) 2009 Optical Society of America

数值模拟探针诱导表面等离子体共振耦合纳米光刻

采用有损耗介质和色散介质的二维时域有限差分方法,数值模拟了以光波长514.5 nm的p偏振基模高斯光束为入射光源,激发Kretschmann型表面等离子体共振,并通过探针的局域场增强效应实现纳米光刻的新方法——探针诱导表面等离子体共振耦合纳米光刻.分别就探针与记录层的间距以及探针针尖大小,模拟分析了不同情况下探针的局域场增强效应和记录层表面的相对电场强度振幅分布.结果表明,探针工作在接触模式时,探针的局域场增强效应最明显,记录层表面的相对电场强度振幅的对比度最大;当探针针尖距记录层5 nm时,针尖下方记录层表面的相对电场强度振幅大于光刻临界值的分布宽度与针尖尺寸相近.

Novel method for design of surface relief guided-mode resonant gratings at normal incidence

We demonstrate that the surface relief guided-mode resonant gratings with specified central wavelength and FWHM in the visible wavelength range can be designed by analyzing the complex poles of Reflectance and transmission coefficient matrix algorithm (RTCM), a variant of S-matrix propagation algorithm proposed for calculation of multilayer gratings. In addition, FWHM is computed with couple-mode (CM) theory of resonant gratings which is firstly extended by Norton et al. in calculation of waveguide grating. Furthermore, the side band reflections of the filter can be reduced to less than 5% in the visible wavelength with the antireflection (AR) design technique widely used in the thin-film field. (C) 2008 Elsevier B.V. All rights reserved.

Acute toxicity of beta gamma-CAT, a naturally existing non-lens beta gamma-crystallin and trefoil factor complex from frog Bombina maxima skin secretions

In vertebrates, non-lens beta gamma-crystallins are widely expressed in various tissues, but their functions are unknown. The molecular mechanisms of trefoil factors, initiators of mucosal healing and being greatly involved in tumorigenesis, have remained

Efficient synthesis and utilization of phenyl-substituted heteroaromatic carboxylic acids as aryl diketo acid isosteres in the design of novel HIV-1 integrase inhibitors

Three new types of aryl diketo acid (ADK) isosteres were designed by conversion of the biologically labile 1,3-diketo unit into heteroaromatic motif such as isoxazole, isothiazole, or 1H-pyrazole to improve the physicochemical property of ADK-based HIV-1

HSPC117 deficiency in cloned embryos causes placental abnormality and fetal death

Somatic cell nuclear transfer (SCNT) has been successfully used in many species to produce live cloned offspring, albeit with low efficiency. The low frequency of successful development has usually been ascribed to incomplete or inappropriate reprogramming of the transferred nuclear genome. Elucidating the genetic differences between normal fertilized and cloned embryos is key to understand the low efficiency of SCNT. Here, we show that expression of HSPC117, which encodes a hypothetical protein of unknown function, was absent or very low in cloned mouse blastocysts. To investigate the role of HSPC117 in embryo development, we knocked-down this gene in normal fertilized embryos using RNA interference. We assessed the post-implantation survival of HSPC117 knock-down embryos at 3 stages: E9 (prior to placenta formation); E12 (after the placenta was fully functional) and E19 (post-natal). Our results show that, although siRNA-treated in vivo fertilized/produced (IVP) embryos could develop to the blastocyst stage and implanted without any difference from control embryos, the knock-down embryos showed substantial fetal death, accompanied by placental blood clotting, at E12. Furthermore, comparison of HSPC117 expression in placentas of nuclear transfer (NT), intracytoplasmic sperm injection (ICSI) and IVP embryos confirmed that HSPC117 deficiency correlates well with failures in embryo development: all NT embryos with a fetus, as well as IVP and ICSI embryos, had normal placental HSPC117 expression while those NT embryos showing reduced or no expression of HSPC117 failed to form a fetus. In conclusion, we show that HSPC117 is an important gene for post-implantation development of embryos, and that HSPC117 deficiency leads to fetal abnormalities after implantation, especially following placental formation. We suggest that defects in HSPC117 expression may be an important contributing factor to loss of cloned NT embryos in vivo. (C) 2010 Elsevier Inc. All rights reserved.

Identification of an additional two-cysteine containing type I interferon in rainbow trout Oncorhynchus mykiss provides evidence of a major gene duplication event within this gene family in teleosts

Multiple type I interferons (IFNs) have recently been identified in salmonids, containing two or four conserved cysteines. In this work, a novel two-cysteine containing (2C) IFN gene was identified in rainbow trout. This novel trout IFN gene (termed IFN5) formed a phylogenetic group that is distinct from the other three salmonid IFN groups sequenced to date and had a close evolutionary relationship with IFNs from advanced fish species. Our data demonstrate that two subgroups are apparent within each of the 2C and 4C type I IFNs, an evolutionary outcome possibly due to two rounds of genome duplication events that have occurred within teleosts. We have examined gene expression of the trout 2C type I IFN in cultured cells following stimulation with lipopolysaccharide, phytohaemagglutinin, polyI:C or recombinant IFN, or after transfection with polyI:C. The kinetics of gene expression was also studied after viral infection. Analysis of the regulatory elements in the IFN promoter region predicted several binding sites for key transcription factors that potentially play an important role in mediating IFN5 gene expression.

Effect of indium-doped interlayer on the strain relief in GaN films grown on Si(111)

Crack-free GaN films have been achieved by inserting an Indoped low-temperature (LT) AlGaN interlayer grown on silicon by metalorganic chemical vapor deposition. The relationship between lattice constants c and a obtained by X-ray diffraction analysis shows that indium doping interlayer can reduce the stress in GaN layers. The stress in GaN decreases with increasing trimethylindium (TMIn) during interlayer growth. Moreover, for a smaller TMIn flow, the stress in GaN decreases dramatically when In acts as a surfactant to improve the crystallinity of the AlGaN interlayer, and for a larger TMIn flow, the stress will increase again. The decreased stress leads to smoother surfaces and fewer cracks for GaN layers by using an In-doped interlayer than by using an undoped interlayer. In doping has been found to enhance the lateral growth and reduce the growth rate of the c face. It can explain the strain relief and cracks reduction in GaN films. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Narrowing of band gap and low-temperature spin glass behavior of FeNi co-doped ZnO nanowires

This letter reports on the Raman, optical and magnetic properties of FeNi co-doped ZnO nanowires prepared via a soft chemical solution method. The microstructural investigations show that the NiFe co-dopants are substituted into wurtzite ZnO nanostructure without forming any secondary phase. The co-doped nanowires show a remarkable reduction of 34 nm (267.9 meV) in the optical band gap, while suppression in the deep-level defect transition in visible luminescence. Furthermore, these nanowires exhibit ferromagnetism and an interesting low-temperature spin glass behavior, which may arise due to the presence of disorder and strong interactions of frustrated spin moments of Ni and Fe co-dopants on the ZnO lattice sites. Copyright (C) EPLA, 2009

Mn-AlInN: a new diluted magnetic semiconductor

Mn ions have been incorporated into MOCVD grown Al1-x In (x) N/GaN thin films by ion implantation to achieve the room temperature ferromagnetism in the samples. Magnetic characterizations revealed the presence of two ferromagnetic transitions one has Curie points at similar to 260 K and the other above room temperature. In-diffusion of indium caused by the Mn implantation leads to the partition of AlInN epilayer into two diluted magnetic semiconductor sub-layers depending on the Mn concentration. The Curie temperature of 260 K is assigned to the layer having lower concentration, whereas T (c) above room temperature is assumed to be associated to the layer having higher Mn concentration.

Room Temperature Ferromagnetism of Mn Implanted AlInN

Ferromagnetic properties of Mn-implanted wurtzite AlxIn1-xN/GaN thin films grown by metal organic chemical vapor deposition (MOCVD) were observed using a quantum design superconducting quantum interference device (SQUID) magnetometer. Hysteresis behavior with a reasonably high saturation magnetic moment at room temperature for all the samples was noted, Two optical thresholds were observed at 1.58 and 2.64 eV, which are attributed to internal transition (E-5 -> T-5(2)) of Mn3+ (d(4)) and hole emission from the neutral Mn acceptor level to the valence band respectively. Bound magnetic polaron formation is considered to be the origin of ferromagnetism in our samples. (c) 2009 The Japan Society of Applied Physics