Thermodynamic analysis of GaSb-GaCl3 vapor phase epitaxy

A thermodynamic model for the GaSb-GaCl3 system in a closed quartz ampoule was proposed. The species in the gas phase are GaCl, GaCl3, Sb-4, Sb-2. The partial pressures of these species and total pressure in the ampoule have been calculated. The calculated results indicate that the equilibrium partial pressures of GaCl, GaCl3, Sb4, Sb2 and the total pressure in the ampoule have strong dependence on temperature, free volume inside the closed ampoule and amount of transport agent GaCl3. The total pressure will give strong influence not only on the flow pattern in the ampoule, but also on the uniformity of the epilayer.

Stoichiometry in GaAs grown in outer space measured nondestructively

A semi-insulating (SI) GaAs single crystal ingot was successfully grown in a recoverable satellite. The two-dimensional distribution of stoichiometry in space-grown SI-GaAs single crystal wafer was studied nondestructively based upon x-ray Band diffraction. The avenge stoichiometry in the space-grown crystal is 0.50007 with mean square deviation of 6 x 10(-6), and shows a better stoichiametric property than the ground-grown SI-GaAs. The average etch pit density (EPD) of dislocations in the crystal revealed by molten KOH is 2.0 x 10(4) cm(-2), and the highest EPD is 3.1 x 10(4) cm(-2). This result indicates that the structural properly of the crystal is quite good.

Space grown semi-insulating gallium arsenide single crystal and its application

Low noise field effect transistors and analogue switch integrated circuits (ICs) have been fabricated in semi-insulating gallium arsenide (SI-GaAs) wafers grown in space by direct ion-implantation. The electrical behaviors of the devices and the ICs have surpassed those fabricated in the terrestrially grown SI-GaAs wafers. The highest gain and the lowest noise of the transistors made from space-grown SI-GaAs wafers are 22.8 dB and 0.78 dB, respectively. The threshold back-gating voltage of the ICs made from space-grown SI-GaAs wafers is better than 8.5 V The con-elation between the characterizations of materials and devices is studied systematically. (C) 2002 COSPAR. Published by Elsevier Science Ltd. All rights reserved.

Semi-insulating GaAs grown in outer space

A semi-insulating GaAs single crystal ingot was grown in a recoverable satellite, within a specially designed pyrolytic boron nitride crucible, in a power-traveling furnace under microgravity. The characteristics of a compound semiconductor single crystal depends fundamentally on its stoichiometry, i.e. the ration of two types of atoms in the crystal. a practical technique for nondestructive and quantitative measuring stoichiometry in GaAs single crystal was used to analyze the space-grown GaAs single crystal. The distribution of stoichiometry in a GaAs wafer was measured for the first time. The electrical, optical and structural properties of the space-grown GaAs crystal were studied systematically, Device fabricating experiments prove that the quality of field effect transistors fabricated from direct ion-implantation in semi-insulating GaAs wafers has a close correlation with the crystal's stoichiometry. (C) 2000 Elsevier Science S.A. All rights reserved.

Structural properties of SI-GaAs grown in space

The structural properties of Semi-insulating gallium arsenide (SI-GaAs) crystal grown with power-travelling technique in space have been studied by double-crystal x-ray diffractometry and chemical etching. The quality of the crystal was first evaluated by x-ray rocking-curve method. The full width at half maximum of x-ray rocking curve in space-grown SI-GaAs is 9.4+/-0.08 are seconds. The average density of dislocations revealed by molten KOH is 2.0 X 10(4) cm(-2), and the highest density is 3.1 X 10(4) cm(-2). The stoichiometry in the single crystal grown in space is improved as well. Unfortunately, the rear of the ingot grown in space is polycrystalline owing to being out of control of power. (C) 1999 COSPAR. Published by Elsevier Science Ltd.

Development and transition of spiral wave in the coupled Hindmarsh-Rose neurons in two-dimensional space

The dynamics and the transition of spiral waves in the coupled Hindmarsh-Rose (H-R) neurons in two-dimensional space are investigated in the paper. It is found that the spiral wave can be induced and developed in the coupled HR neurons in two-dimensional space, with appropriate initial values and a parameter region given. However, the spiral wave could encounter instability when the intensity of the external current reaches a threshold value of 1.945. The transition of spiral wave is found to be affected by coupling intensity D and bifurcation parameter r. The spiral wave becomes sparse as the coupling intensity increases, while the spiral wave is eliminated and the whole neuronal system becomes homogeneous as the bifurcation parameter increases to a certain threshold value. Then the coupling action of the four sub-adjacent neurons, which is described by coupling coefficient D', is also considered, and it is found that the spiral wave begins to breakup due to the introduced coupling action from the sub-adjacent neurons (or sites) and together with the coupling action of the nearest-neighbour neurons, which is described by the coupling intensity D.

Short-term effects of sheep excrement on carbon dioxide, nitrous oxide and methane fluxes in typical grassland of Inner Mongolia

Excrement patches of grazing animals play an important role in greenhouse gas (GHG) fluxes due to the high nitrogen (N) and available carbon (C) deposited in small areas, but little information is available for the effect of excrement in the Inner Mongolian grassland (43 26 degrees N, 116 degrees 40'E). To elucidate the effect of grazing sheep urine, fresh dung and compost on fluxes of methane (CH4), carbon dioxide (CO2), and nitrous oxide (N2O), a short-term field study (65 days) was carried out in the typical grassland of Inner Mongolia with the optimised closed chamber/GC technique. Compared with the control, cumulative net CH4 consumption decreased 36, 31, and 18% from urine, fresh dung, and compost plots, respectively; net CO2-C output increased by 6.5, 1.5, and 1.2% from urine, fresh dung, and compost treated soil, respectively; about three times as much N2O-N was emitted from urine and the fresh dung treatments during 65 days. Nitrous oxide emission was positively correlated with CO, emission (R = 0.691, P < 0.01) and water-filled pore space (R = 0.698, P < 0.01). The percentages of N2O-N loss of applied-N were 0.44 and 1.05% for urine and fresh dung, respectively. Our results suggest that in autumn in the degraded grassland of Inner Mongolia, the effect of sheep excrement may be ignored when evaluating the total GHG emissions.