Realization of low threshold of InGaAs/InAlAs quantum cascade laser

By optimizing the molecule beam epitaxy growth condition, the quality of quantum cascade (QC) material has greatly been improved. The spectrum of double x-ray diffraction indicates that the interface between the constituent layers is very smooth, the lattice mismatch between the epilayer and the substrate is less than 0.1%, and the periodicity fluctuation of the active region is not more than 4.2%. The QC laser with the emission wavelength of about 5.1 mum is operated at the threshold of 0.73 kA/cm(2) at liquid nitrogen temperature with the repetition rate of 10kHz and at a duty cycle of 1%. Meanwhile, the performance of the laser can be improved with suitable post process techniques such as the metallic ohmic contact technology.

Correlation of structural and optical investigation of InGaAs/InAlAs quantum cascade laser

Double X-ray diffraction has been used to investigate InGaAs/InAlAs quantum cascade (QC) laser grown on InP substrate by molecule beam epitaxy, by means of which, excellent lattice matching, the interface smoothness, the uniformity of the thickness and the composition of the epilayer are disclosed. What is more, these results are in good agreement with designed value. The largest lattice mismatch is within 0.18% and the intersubband absorption wavelength between two quantized energy levels is achieved at about lambda = 5.1 mum at room temperature. At 77 K, the threshold density of the QC laser is less than 2.6 kA/cm(2) when the repetition rate is 5 kHz and the duty cycle is 1%. (C) 2003 Elsevier Science B.V. All rights reserved.

Realization of quantum cascade laser operating at room temperature

X-ray diffraction, as an effective probe and simple method, is used to ascertain the precise control of the epilayer thickness and composition. Intersubband absorption from the whole structure of the QC laser is used to monitor the wavelength of the QC laser and the material quality. Path for growth of high-quality InP-based InGaAs/InAlAs quantum cascade laser material is realized. The absorption between two quantized energy levels is achieved at similar to4.7 mum. Room temperature laser action is achieved at lambda approximate to 5.1 - 5.2 mum. For some devices, if the peak output power is kept at 2 mW, quasi-continuous wave operation at room temperature can persist for more than I It. (C) 2002 Elsevier Science B.V. All rights reserved.

Growth and characterization of InGaAs/InAlAs quantum cascade lasers

The growth and characterization of quantum cascade (QC) lasers based on InGaAs/InAlAs material system are investigated. Pronounced intersubband absorption from stacked active region of QC structure is used to monitor the wavelength of QC laser and disclose the material quality. The precise control of the epilayer thickness and the good quality of interfaces are demonstrated by the abundant narrow satellite peaks of X-ray diffraction. Laser action in quasi-continuous wave operation is achieved at lambda approximate to 5.1-5.2 mum up to 300 K. For 10 x 800 mum(2) laser device, peak output power of similar to7.2 mW and threshold current density of 3 kA/cm(2) at room temperature are obtained. For some devices, if keep the peak output powers at the similar to2 mW level, quasi-continuous wave operation at room temperature persists more than 1 h are recorded. (Q) (C) 2001 Elsevier Science Ltd. All rights reserved.

Optical properties and band lineup in GaNxAs1-x/GaAs single quantum wells

The optical properties and the band lineup in GaNAs/GaAs single quantum wells (SQWs) grown by molecular beam epitaxy (MBE) using photoluminescence (PL) technique were investigated. It was found that the low-temperature PL is dominated by the intrinsic localized exciton emission. By fitting the experimental datawith a simple calculation, band offset of the GaN0.015As0.985/GaAs heterostructure was estimated. Moreover, DeltaE(c), the discontinuity of the conduction band was found to be a nonlinear function of the nitrogen composition (chi) and the average variation of DeltaE(c) is about 0. 110eV per % N, such smaller than that reported on the literature to (0.156 similar to 0.175 eV/N %). In addition, Qc has little change whtn N composition increares, with an experimential relation of QC approximate tox(0.25). The band bowing coefficient (b) was also studied in this paper. The measured band bowing coefficient shows a strong function of chi, giving an experimental support to the theoretic calculation of Wei Su-Huai and Zunger Alex (1996).

Strain-compensated quantum cascade lasers operating at room temperature

Quantum cascade (QC) lasers based on strain-compensated InxGa(1-x)As/InyAl(1-y)As grown on InP substrate using molecular beam epitaxy is reported. The epitaxial quality is demonstrated by the abundant narrow satellite peaks of double-crystal X-ray diffraction and cross-section transmission electron microscopy of the QC laser wafer. Laser action in quasi-continuous wave operation is achieved at lambda approximate to 3.6-3.7 mum at room temperature (34 degreesC) for 20 mum x 1.6 mm devices, with peak output powers of similar to 10.6mW and threshold current density of 2.7kA/cm(2) at this temperature. (C) 2000 Published by Elsevier Science B.V.

High-performance strain-compensated InGaAs/InAlAs quantum cascade lasers

We report on the realization of quantum cascade (QC) lasers based on strain-compensated InxGa(1-x)As/In(y)A((1-y))As grown on InP substrates using molecular beam epitaxy. X-ray diffraction and cross section transmission electron microscopy have been used to ascertain the quality of the QC laser materials. Quasi-continuous wave lasing at lambda approximate to 3.54-3.7 mum at room temperature was achieved. For a laser with 1.6 mm cavity length and 20 mum ridge-waveguide width,quasi-continuous wave lasing at 34 degreesC persists for more than 30 min, with a maximum power of 11.4 mW and threshold current density of 1.2 kA cm(-2), both record values for QC lasers of comparable wavelength.

纳米半导体技术

本书介绍了纳米半导体材料的定义、性质及其在未来信息技术中的地位的同时，主要介绍了纳米半导体材料制备的方法和共性关键技术，几种常用的纳米半导体材料的评价技术和应变自组装半导体量子点(线)的尺寸、密度分布、形貌、组分及结构特性的实验研究，纳米半导体材料的电子结构、光学和电学性质，基于子带跃迁的量子级联激光器的工作原理、特性和它的发展现状及其应用前景分析，最后重点介绍了纳米半导体器件及应用。本书适合于从事或对纳米半导体科学技术有兴趣的科研工作者、教师、研究生、本科生和工程技术人员阅读，有些章节可作为科普读物。

Homoepitaxial growth and characterization of 4H-SiC epilayers by low-pressure hot-wall chemical vapor deposition

Horizontal air-cooled low-pressure hot-wall CVD (LP-HWCVD) system is developed to get high quality 4H-SiC epilayers. Homoepitaxial growth of 4H-SiC on off-oriented Si-face (0001) 4H-SiC substrates purchased from Cree is performed at a typical temperature of 1500 degrees C with a pressure of 40 Torr by using SiH4+C2H4+H-2 gas system. The surface morphologies and structural and optical properties of 4H-SiC epilayers are characterized with Nomarski optical microscope, atomic force microscopy (AFM), x-ray diffraction, Raman scattering, and low temperature photoluminescence (LTPL). The background doping of 32 pm-thick sample has been reduced to 2-5 x 10(15) cm(-3). The FWHM of the rocking curve is 9-16 arcsec. Intentional N-doped and B-doped 4H-SiC epilayers are obtained by in-situ doping of NH3 and B2H6, respectively. Schottky barrier diodes with reverse blocking voltage of over 1000 V are achieved preliminarily.

Morphological defects and uniformity issues of 4H-SiC homoepitaxial layers grown on off-oriented (0001)Si faces

The morphological defects and uniformity of 4H-SiC epilayers grown by hot wall CVD at 1500 degrees C on off-oriented (0001) Si faces are characterized by atomic force microscope, Nomarski optical microscopy, and Micro-Raman spectroscopy. Typical morphological defects including triangular defects, wavy steps, round pits, and groove defects are observed in mirror-like SiC epilayers. The preparation of the substrate surface is necessary for the growth of high-quality 4H-SiC epitaxial layers with low-surface defect density under optimized growth conditions. (c) 2006 Elsevier Ltd. All rights reserved.

冠醚修饰电极及其在分析化学中的应用

本论文较系统地研究了Naf:on聚合物薄膜冠醚修饰电极阳极溶出伏安法在分析中的应用。首次将Naf:on薄膜冠醚类化合物修饰电极应用于铊、银和铅三种离子的测定，得到了高灵敏度的分析方法亦用于实际样品测定。用涂层法制备了Naf:on聚合物薄膜冠醚（二环已基18－冠－6）化学修饰电极，用这种修饰电极测定金属离子的高灵敏度来源于将Naf:on对大阳离子的强离子交换能力、冠醚类化合物络合金属阳离子形成大阳离子的能力与溶出伏安法的高灵敏度三者的结合，冠醚化合物中性分子可与金属阳离子络合形成大络阳离子：M~(n+)＋qC=(MC_q)~(n+) Naf:on膜由于其具有的对大阳离子的强交换能力而将冠醚与和金属离子形成的大阳离子络合并吸附于电极表面，在溶出伏安法的富集过程中，电位置于是以令（MCq）~(n+)还原的位置以使（MCq）~(n+)还原：（MCq）~(n+)＋ne=M＋qC 析出的零价态的金属可在Naf:on膜内固定，同时又放出冠醚分子成为新的未被占据的络合吸附中心，继续捕获溶液中的阳离子从而起到富集作用。由于使用溶出伏安法排除电极表面络合吸附饱和的问题，从而使本方法灵敏度大大高于一般的使用化学修饰电极进行预富集的分析测定方法。提出了Naf:on薄膜冠醚修饰电极阳极溶出伏安法测定水溶液中Te(I)的方法，在电位为－1.30 Vvs.Ag/Ag ce处0.1高氯酸锂溶液中，用该修饰电极富集30分钟，检测下限可低至2×10~(-12)M（0.4 ppt）。溶液中Te(I)浓度在5×10(-12)M～1×10(-8)M范围内与溶出峰电流成良好的线性关系且通过原点，可以用标准加入法测定。常见共存元素Zn（II），Su（II），Cu（II），Fe（II），Co（II），Ni（II），In（III）等无干扰。Pb（II）与Cd（II）共存时对Te（I）有干扰，同1×10~(-3)M EDTA掩蔽可有消除干扰。测定了合成样品中的Te（I）含量，平行测定七组样品相对标准偏差4.2％。本文法是目前Te（I）的分析中最灵敏的电化学方法之一。提出了Naf:on薄膜冠醚修饰电极阳极溶出伏安法测定水溶液中Ag（I）的方法。在0.01MHNO_3 4～7×10~(-3)M Cl混合溶液中，检测电位在－0.30Vvs.SCE富集30分钟，检出下限可低至2×10~(-12)M，是迄今所见Ag（I）的分析中灵敏度最高的电分析方法。Ag（I）浓度在2×10~(-11)M～1×10~(-8)M范围内与溶出峰电流成良好的线性关系且通过原点。五到十倍量的Hg（II）和Au（II）有干扰。用本法测定了分析纯硝酸铵中的银含量为0.000048％，平行测定七组样品相对标准偏差为3.7％。提出用Naf:on薄膜冠醚修饰电极阳极溶出伏安法测定水样中铅的方法。在0.lMLiNO_3底液中，电位在－1.10Vvs.SCE富庥3分钟检测限达5×10~(-10)M，方法快速灵敏。Pb（II）浓度在1×10~(-9)～1×10~(-7)M范围内与溶出峰电流呈线性关系。1×10~(-6)以上Cu（II）存在使Pb（II）的峰电流时显增加。用本方法测定了自来水样中的铅含量，平行测定七组样品相对标准偏差8.0％。该修饰电极在K~+浓度为1×10~(-5)～1×10~(-7)M范围内对K~+有能斯特响应。本工作为铊、铅、银的痕量分析提供了高灵敏度的方法，为溶出伏安法摆脱汞污染的问题做出了贡献，为化学修饰电极用于分析化学领域提供了新的途径。

Sequential coupling transport for the dark current of quantum dots-in-well infrared photodetectors

The dark current characteristics and temperature dependence for quantum dot infrared photodetectors have been investigated by comparing the dark current activation energies between two samples with identical structure of the dots-in-well in nanoscale but different microscale n-i-n environments. A sequential coupling transport mechanism for the dark current between the nanoscale and the microscale processes is proposed. The dark current is determined by the additive mode of two activation energies: E-a,E-micro from the built-in potential in the microscale and E-a,E-nano related to the thermally assisted tunneling in nanoscale. The activation energies E-a,E-micro and E-a,E-nano decrease exponentially and linearly with increasing applied electric field, respectively.