Correlation of structural and optical investigation of InGaAs/InAlAs quantum cascade laser


Autoria(s): Li CM; Liu FQ; Zhang ZY; Meng XQ; Jin P; Wang ZG
Data(s)

2003

Resumo

Double X-ray diffraction has been used to investigate InGaAs/InAlAs quantum cascade (QC) laser grown on InP substrate by molecule beam epitaxy, by means of which, excellent lattice matching, the interface smoothness, the uniformity of the thickness and the composition of the epilayer are disclosed. What is more, these results are in good agreement with designed value. The largest lattice mismatch is within 0.18% and the intersubband absorption wavelength between two quantized energy levels is achieved at about lambda = 5.1 mum at room temperature. At 77 K, the threshold density of the QC laser is less than 2.6 kA/cm(2) when the repetition rate is 5 kHz and the duty cycle is 1%. (C) 2003 Elsevier Science B.V. All rights reserved.

Identificador

http://ir.semi.ac.cn/handle/172111/11548

http://www.irgrid.ac.cn/handle/1471x/64744

Idioma(s)

英语

Fonte

Li CM; Liu FQ; Zhang ZY; Meng XQ; Jin P; Wang ZG .Correlation of structural and optical investigation of InGaAs/InAlAs quantum cascade laser ,JOURNAL OF CRYSTAL GROWTH,2003,253 (1-4):198-202

Palavras-Chave #半导体材料 #lattice-mismatch #microstructure #radiation #X-ray diffraction #molecular beam epitaxy #infrared devices #quantum cascade laser #MU-M
Tipo

期刊论文