Multi-exponentially photoelectric response of bacteriorhodopsin

A thin oriented bacteriorhodopsin (bR) him is deposited on a stainless steel slide by use of the electrophoretic sedimentation method. A junction is made with electrolyte gels having a counterelectrode to construct a bR-based photoelectric detector;. The photoelectric response signal to a 10 ns laser pulse is measured. A theory on the photoelectric kinetics of bR is developed based on the concept of the charge displacement current and the bR photocycle rate equations. Comparison between the theoretical and experimental results proves that the bR photoelectric response to a short laser pulse is a multi-exponential process. The decay time constants and amplitudes of each, exponential component are obtained by data fitting.

Photoelectric behaviour of lattice-matched GaAs/AlxGa1-xAs quantum well electrodes

The photoelectric properties of the lattice-matched GaAs/AlxGa1-xAs quantum well electrodes and the influence of the electrode structure such as well width, the thickness of outer barrier and the number of period were studied in a nonaqueous electrolyte. A new kind of structure of multiple quantum well electrode with varied well width, possessing the quantum yield three times that of GaAs bulk materials, was designed and fabricated.

Photoelectric Conversion Efficiency Enhanced by Tilting Monocrystalline Silicon Photovoltaic Device

Based on the idea of tilting a photoelectric conversion device,the monocrystalline silicon p-n junction device was tilted to make light incident upon the device at an angle of 45° with the normal of the device surface,resulting in infrared multiple-internal-reflection inside the device.The internal reflection leads to path length increase of infrared light,making the enhancement of infrared absorption of the device.An increase of 11% in energy conversion efficiency has been obtained through tilting the device.

Structural and photoelectric studies on double barrier quantum well infrared detectors

GaAs/AlAs/GaAlAs double barrier quantum well (DBQW) structures are employed for making the 3 similar to 5 mu m photovoltaic infrared (IR) detectors with a peak detectivity of 5x10(11) cmHz(1/2)/W at 80K. The double crystal x-ray diffraction is combined with synchrotron radiation x-ray analysis to determine the exact thickness of GaAs, AlAs and GaAlAs sublayers. The interband photovoltaic (PV) spect ra of the DBQW sample and the spectral response of the IR photocurrent of the devices are measured directly by edge excitation method, providing the information about spatial separation processes of photogenerated carriers in the multiquantum wells and the distribution of built-in field in the active region.

Fast simulation of the forward tracking detector of HPLUS

The necessity of installing a forward tracking detector stack is discussed for the Hadron Physics LanzhoU Spectrometer(HPLUS). A local tracker is developed to solve the multi-track finding problem. The track candidates are searched iteratively via Hough Transform. The fake tracks are removed by a least square fitting process. With this tracker we have studied the feasibility of pp -> pp + phi(-> K+K-), a typical physical channel proposed on HPLUS. The single track momentum resolution due to the uncertainty of the positioning in FTD is 1.3%. The multiple scattering effect contributes about 20% to the momentum resolution in the FTD coverage. The width and the signal-to-background ratio of the reconstructed phi are 1.51 MeV and 4.36, respectively, taking into account the direct Kaon channel pp -> pp + K+K- as background. The geometry coverage of FTD for phi events is about 85.4%. Based on the current fast simulation and estimation, the geometrical configuration of FTD meets the physical requirement of HPLUS under the current luminosity and multiplicity conditions. The tracker is applicable in the full simulation coming next and is extendable to other tracking component of HPLUS.

Incremental pairwise discriminant analysis based visual tracking

The distinguishment between the object appearance and the background is the useful cues available for visual tracking in which the discriminant analysis is widely applied However due to the diversity of the background observation there are not adequate negative samples from the background which usually lead the discriminant method to tracking failure Thus a natural solution is to construct an object-background pair constrained by the spatial structure which could not only reduce the neg-sample number but also make full use of the background information surrounding the object However this Idea is threatened by the variant of both the object appearance and the spatial-constrained background observation especially when the background shifts as the moving of the object Thus an Incremental pairwise discriminant subspace is constructed in this paper to delineate the variant of the distinguishment In order to maintain the correct the ability of correctly describing the subspace we enforce two novel constraints for the optimal adaptation (1) pairwise data discriminant constraint and (2) subspace smoothness The experimental results demonstrate that the proposed approach can alleviate adaptation drift and achieve better visual tracking results for a large variety of nonstationary scenes (C) 2010 Elsevier B V All rights reserved

Rectangular AgIn(WO4)(2) nanotubes: A promising photoelectric material

Rectangular AgIn(WO4)(2) nanotubes with a diameter range of 80 to 120 nm and length up to 2 mu m have been synthesized by a hydrothermal method. These nanotubes exhibit interesting white light emissions when using 320 nm as the excitation wavelength. A photocatalytic reaction for water decomposition to evolve K, was performed under UV irradiation, and the rate of H, evolution is nearly seven times that of the sample prepared by a solid-state reaction, which shows much higher photocatalytic activities compared with their bulk counterparts.

THE PHOTOELECTRIC PROPERTIES OF THIN-FILMS OF RARE-EARTH MONOPHOSPHIDES

The optical, electrical and photoelectric properties of rare earth monophosphides (LnP, Ln = La, Nd, Sm, Y, Dy and Yb) have been studied in thin films. The films exhibit semiconducting behaviour with energy gaps of 1.0-1.46 eV and n-type electrical conduction. Their resistivities are 10(-2) OMEGA-cm with corresponding Hall mobilities of 8.5-400 cm2 V-1 s-1. The films are deposited on a p-type silicon substrate in vacuum. Voltage-current characteristic measurements show that a p-n junction has been formed between LnP and silicon. Spectral sensitivity and a photovoltaic effect have been observed in LnP-Si junctions. They may be useful photoelectric materials.