High-performance EML grown on taper-masked pattern substrates by ultra-low-pressure MOCVD

A novel in-plane bandgap energy controlling technique by ultra-low pressure (22 mbar) selective area growth (SAG) has been developed. To our knowledge, this is the lowest pressure condition during SAG process ever reported. In this work, high crystalline quality InGaAsP-InP MQWs with a photoluminescence (PL) full-width at half-maximum (FWHM) of less than 35meV are selectively grown on mask-patterned planar InP substrates by ultra-low pressure (22 mbar) metal-organic chemical vapor deposition (MOCVD). In order to study the uniformity of the MQWs grown in the selective area, novel tapered masks are designed and used. Through optimizing growth conditions, a wide wavelength shift of over 80 nm with a rather small mask width variation (0-30 mu m) is obtained. The mechanism of ultra-low pressure SAG is detailed by analyzing the effect of various mask designs and quantum well widths. This powerful technique is then applied to fabricate an electroabsorption-modulated laser (EML). Superior device characteristics are achieved, such as a low threshold current of 19mA and an output power of 7mW. (c) 2005 Elsevier B.V. All rights reserved.

High-performance 980-nm quantum-well lasers using a hybrid material system of an Al-free InGaAs-InGaAsP active region and AlGaAs cladding layers grown by metal-organic chemical vapor deposition

We report on the material growth and fabrication of high-performance 980-nm strained quantum-well lasers employing a hybrid material system consisting of an Al-free InGaAs-InGaAsP active region and AlGaAs cladding layers. The use of AlGaAs cladding instead of InGaP provides potential advantages in flexibility of laser design, simple epitaxial growth, and improvement of surface morphology and laser performance. The as-grown InGaAs-InGaAsP(1.6 eV)-AlGaAs(1.95 eV) lasers achieve a low threshold current density of 150 A/cm(2) (at a cavity length of 1500 mu m), internal quantum efficiency of similar to 95%, and low internal loss of 1.8 cm(-1). Both broad-area and ridge-waveguide laser devices are fabricated. For 100-mu m-wide stripe lasers with a cavity length of 800 Irm, a slope efficiency of 1.05 W/A and a characteristic temperature coefficient (T-0) of 230 K are achieved. The lifetime test demonstrates a reliable performance. The comparison with our fabricated InGaAs-InGaAsP(1.6 eV)-AlGaAs(1.87 eV) lasers and Al-free InGaAs-InGaAsP (1.6 eV)-InGaP lasers are also given and discussed. The selective etching between AlGaAs and InGaAsP is successfully used for the formation of a ridge-waveguide structure. For 4-mu m-wide ridge-waveguide laser devices, a maximum output power of 350 mW is achieved. The fundamental mode output power can be up to 190 mW with a slope efficiency as high as 0.94 W/A.

Improvement of GaN-based light emitting diodes performance grown on sapphire substrates patterned by wet etching - art. no. 684107

An effective approach to enhance the light output power of InGaN/GaN light emitting diodes (LED) was proposed using pyramidal patterned sapphire substrates (PSS). The sapphire substrates were patterned by a selective chemical wet etching technique. GaN-based LEDs were fabricated on patterned sapphire substrates through metal organic chemical deposition (MOCVD). The LEDs fabricated on patterned sapphire substrates exhibit excellent device performance compared to the conventional LEDs fabricated on planar sapphire substrates in the case of the same growth and device fabricating conditions. The light output power of the LEDs fabricated on patterned sapphire substrates was about 37% higher than that of LEDs on planar sapphire substrates at an injection current of 20 mA. The significant enhancement is attributable to the improvement of the quality of GaN-based epilayers and improvement of the light extraction efficiency by patterned sapphire substrates.

High-performance EML grown on taper-masked pattern substrates by ultra-low-pressure MOCVD

A novel in-plane bandgap energy controlling technique by ultra-low pressure (22 mbar) selective area growth (SAG) has been developed. To our knowledge, this is the lowest pressure condition during SAG process ever reported. In this work, high crystalline quality InGaAsP-InP MQWs with a photoluminescence (PL) full-width at half-maximum (FWHM) of less than 35meV are selectively grown on mask-patterned planar InP substrates by ultra-low pressure (22 mbar) metal-organic chemical vapor deposition (MOCVD). In order to study the uniformity of the MQWs grown in the selective area, novel tapered masks are designed and used. Through optimizing growth conditions, a wide wavelength shift of over 80 nm with a rather small mask width variation (0-30 mu m) is obtained. The mechanism of ultra-low pressure SAG is detailed by analyzing the effect of various mask designs and quantum well widths. This powerful technique is then applied to fabricate an electroabsorption-modulated laser (EML). Superior device characteristics are achieved, such as a low threshold current of 19mA and an output power of 7mW. (c) 2005 Elsevier B.V. All rights reserved.

Structural and Optical Performance of GaN Thick Film Grown by HVPE

Thick GaN films were grown on GaN/sapphire template in a vertical HVPE reactor. Various material characterization techniques,including AFM, SEM, XRD, RBS/Channeling, CL, PL, and XPS, were used to characterize these GaN epitaxial films. It was found that stepped/terraced structures appeared on the film surface,which were indicative of a nearly step-flow mode of growth for the HVPE GaN despite the high growth rate. A few hexagonal pits appeared on the surface, which have strong light emission. After being etched in molten KOH, the wavy steps disappeared and hexagonal pits with {1010} facets appeared on the surface. An EPD of only 8 ×10~6cm~(-2) shows that the GaN film has few dislocations. Both XRD and RBS channeling indicate the high quality of the GaN thick films. Sharp band-edge emission with a full width at half maximum（FWHM）of 67meV was observed, while the yellow and infrared emissions were also found. These emissions are likely caused by native defects and C and O impurities.

High performance 1.55 mu m InGaAsP/InP strained layer quantum well laser diodes fabricated by MOCVD overgrowth method

High performance uncooled 1.55 mu m InGaAsP/InP strained layer quantum well (SL-QW) lasers grown by low pressure metal organic chemical vapor deposition (LP-MOCVD) were reported in this paper. Whole MOCVD over growth method were applied in this work. The threshold currents of 5mA and the highest lasing temperature of 122 degrees C were obtained.

Enhancing the Performance of the Organic Light-emitting Device (OLED) by Thermal Treatment

A comparative study on the annealing of the ITO substrates and the organic layers were conducted on Organic light-emitting device (OLED). We fabricated four devices with the structure of Al/Alq(3)/TPD: PVK/NiO/ITO/Glass, and investigated the effect of heat on device performance by selectively annealing. When the TPD: PVK layers were annealed at 90 degrees C with 30 min annealing time and the ITO substrates were annealed at 300 degrees C with a constant annealing time (100 min). We find the OLED shows obvious performance improvement in brightness and current efficiency, which is attributable to the fact that annealing reduces defects and improves the interface structures of the organics and the organic/ITO interfaces. On the other hand, an appropriate annealing would slow the transportation of the hole, thus finally leads to more balanced electron and hole.

Determination and identification of isoflavonoids in Radix astragali by matrix solid-phase dispersion extraction and high-performance liquid chromatography with photodiode array and mass spectrometric detection

The isoflavonoids in Radix astragali were determined and identified by HPLC-photodiode array detection-MS after extraction employing matrix solid-phase dispersion (MSPD). As a new sample preparation method for R. astragali, the MSPD procedure was optimized, validated and compared with conventional methods including ultrasonic and Soxhlet extraction. The amounts of two major components in this herb, formononetin (6) and ononin (2), were determined based on their authentic standards. Four major isoflavonoids, formononetin (6), ononin (2), calycosin (5) and its glycoside (1), and three minor isoflavonoids, (6aR,11aR)-3-hydroxy-9, 10-dimethoxypterocarpan (7), its glycoside (3), and (3R)-7,2'-dihydroxy-3',4'-dimethoxyisoflavone-7-O-beta-D-glycoside (4), were identified based on their characteristic two-band UV spectra and [M + H](+), [aglycone + H](+) and [A1 + H](+) ions, etc. The combined MSPD and HPLC-DAD-MS method was suitable for quantitative and qualitative determination of the isoflavonoids in R. astragali. (C) 2003 Elsevier B.V. All rights reserved.

Development of a precolumn derivatization method for the determination of free amines in wastewater by high-performance liquid chromatography via fluorescent detection with 9-(2-hydroxyethyl)acridone

A simple, sensitive, and mild method for the determination of amino compounds based on a condensation reaction with fluorescence detection has been developed. 9-(2-Hydroxyethyl)acridone reacts with coupling agent N,N-carbonyldiimidazole at ambient temperature to form activated amide intermediate 9-(2-acridone)oxyethylcarbonylimidazole (AOCD). The amide intermediate (AOCD) preferably reacts with amino compounds under mild reactions in the presence of 4-(dimethylamino)pyridine (base catalyst) in acetonitrile to give the corresponding sensitively fluorescent derivatives with an excitation maximum lambda(ex) 404 mn and an emission maximum at lambda(em) 440 nm. The labeled derivatives exhibit high stability under reversed-phase conditions. The fluorescence intensities of derivatives in various solvents or at different temperatures were investigated. The method, in conjunction with a gradient elution, offers a baseline resolution of the common amine derivatives on a reversed-phase C-18 column. The LC separation for the derivatized amines shows good reproducibility with acetonitrile-water including 2.5% DMF as mobile phase. The relative standard deviations (n = 6) for each amine derivative are <4.5%. The detection limits (at a signal-to-noise ratio of 3) per injection were 0.16-12.8 ng/mL. Further research for the field of application, based on the AOCD amide intermediate as derivatization reagent, for the determination of free amines in real water samples is achieved.

Analysis of aromatic amines by high-performance liquid chromatography with pre-column derivatization by 2-(9-carbazole)-ethyl-chloroformate

2-(9-Carbazole)-ethyl-chloroformate (CEOC), a novel pre-column fluorescence derivatization reagent, has been developed for the analysis of aromatic amines. Taking five monocyclic aromatic amines (o-toluidine, aniline, 3,4-dimethylaniline, N-ethyl-p-toluidine, and p-phenylenediamine) as testing compounds, derivatization conditions such as pH of borate buffer, reaction time and fluorescent tagging reagent concentration have been investigated. By a one-step procedure, CEOC reacts readily with the aromatic amines to form stable derivatives with excitation and emission wavelengths, respectively, at 293 and 360 nm. This derivatization reaction could be finished within 20 min even at room temperature. The peak shapes of the derivatized aromatic amines can be improved greatly without any addition of competition amines into the mobile phase. Furthermore, this method can offer excellent quantitative precision with high tolerance of the matrix of samples. (C) 2003 Elsevier B.V. All rights reserved.

Determination of peptides and amino acids from wool and beer with sensitive fluorescent reagent 2-(9-carbazole)-ethyl chloroformate by reverse phase high-performance liquid chromotography and liquid chromotography mass spectrometry

A new method for the sensitive determination of amino acids and peptides using the tagging reagent 2-(9-carbazole)-ethyl chloroformate (CEOC) with fluorescence (FL) detection has been developed. Identification of derivatives was carried out by liquid chromotography mass spectrometry. The chromophore in the 2-(9-fluorenyl)-ethyl chloroformate (FMOC) reagent was replaced by carbazole, which resulted in a sensitive fluorescence lerivatizing agent CEOC. CEOC can easily and quickly label peptides and amino acids. Derivatives are stable enough to be efficiently analyzed by high-performance liquid chromatography. Studies on derivatization demonstrate excellent derivative yields over the pH range 8.8-10.0. Maximal yields close to 100% are observed with three- to fourfold molar reagent excess. Derivatives exhibit strong fluorescence and allow direct injection of the reaction mixture with no significant disturbance from the major fluorescent reagent degradation by-products, such as 2(9-carbazole)-ethanol and bis-(2-(9-carbazole)-ethyl) carbonate. In addition, the detection responses for CEOC derivatives are compared to those obtained with FMOC. The ratios AC(CEOC)/AC(FMOC) = 1.00-1.82 for fluorescence (FL) response and AC'(CEOC)/AC'(FMOC) = 1.00-1.21 for ultraviolet (UV) response are observed (here, AC and AC' are, respectively, FL and UV F response). Separation of the derivatized peptides and amino acids has been optimized on a Hypersil BDS C18 column. Excellent linear responses are observed. This method was used successfully to analyze protein hydrolysates from wool and from direct-derivatized beer. (C) 2003 Elsevier Science (USA). All rights reserved.