High repetition rate Q-switched microchip Nd:YVO4 laser with pulse duration as short as 1.1 ns

We have demonstrated a compact and an efficient passively Q-switched microchip Nd:YVO4 laser by using a composite semiconductor absorber as well as an output coupler. The composite semiconductor absorber was composed of an LT (low-temperature grown) In0.25Ga0.75As absorber and a pure GaAs absorber. To our knowledge, it was the first demonstration of the special absorber for Q-switching operation of microchip lasers. Laser pulses with durations of 1.1 ns were generated with a 350 mu m thick laser crystal and the repetition rate of the pulses was as high as 4.6 MHz. The average output power was 120 mW at the pump power of 700 mW. Pulse duration can be varied from 1.1 to 15.7 ns by changing the cavity length from 0.45 to 5 mm. Pulses with duration of 1.67 and 2.41 ns were also obtained with a 0.7 mm, thick laser crystal and a 1 mm thick laser crystal, respectively. (C) 2007 Elsevier GmbH. All rights reserved.

Q-switched and mode-locked diode-pumped Nd : YVO4 laser with an intracavity composite semiconductor saturable absorber

We have demonstrated a passively Q-switched and mode-locked Nd:YVO4 laser with an intracavity composite semiconductor saturable absorber (ICSSA). Stable Q-switched and mode-locked pulses with Q-switched envelope pulse duration of 180 ns and pulse repetition rate of 72KHz have been obtained. The maximum average output power was 1.45W at 8W incident pump power. The repetition rate of the mode-locked pulses inside the Q-switched envelope was 154 MHz. Experimental results revealed that this ICSSA was suitable for Q-switched and mode-locked solid-state lasers. (c) 2007 Elsevier Ltd. All rights reserved.

Experiments of a diode-pumped Nd : GdVO4/LT-GaAs Q-switched and mode-locked laser

A diode-pumped passively Q-switched mode-locked (QML) Nd:GdVO4 laser with a low temperature GaAs (LT-GaAs) saturable absorber is presented. The maximal Q-switched mode-locked average output power was 798 mW with the Q-switched envelop having a repetition rate of 125 kHz. The mode-locked pulse trains inside the Q-switched pulse envelope had a repetition rate of similar to 750 MHz. The laser properties of the operational parameters on the pump power were also investigated experimentally.

High-repetition rate Q-switched Nd : YVO4 laser with a composite semiconductor absorber

A diode-pumped Nd:YVO4 laser passively Q switched by a semiconductor absorber is demonstrated. The Q-switched operation of the laser has an average output power of 135 mW with a 1.6 W incident pump power. The minimum pulse width is measured to be about 8.3 ns with a repetition rate of 2 MHz. To our knowledge, this is the first demonstration of a solid-state laser passively Q-switched by such a composite semiconductor absorber. (c) 2006 Optical Society of America.

Efficient Mode-locked and Q-switched Nd∶YVO_4 Laser with Semiconductor Saturable Absorber Mirror

We reported an efficient diode pumped Nd ! YVO, 1 064 nm laser passively mode-locked and Q-switched by a semiconductor saturable absorber mirror(SESAM). At the incident pump power of 7. 5 W, 2. 81 W average output power was obtained during stable CW mode locking with a repetition rate of 111 MHz. The optical conversion efficiency was 37. 5% , and the slope efficiency was 39%. So far as we know, this is the highest optical-optical conversion efficiency with a SESAM at home.

Research on Q-Switched Nd : YAG laser engraving

IN this paper, the engraving process with Q-Switched Nd:YAG laser is investigated. High power density is the pre- requisition to vapor materials, and high repetition rate makes the engraving process highly efficient. An acousto- optic Q-Switch is applied in the cavity of CW 200 W Nd:YAG laser to achieve the high peak power density and the high pulse repetition rate. Different shape craters are formed in a patterned structure on the material surface when the laser beam irradiates on it by controlling power density, pulse repetition rate, pulse quantity and pulse interval. In addition, assisting oxygen gas is used for not only improving combustion to deepen the craters but also removing the plasma that generated on the top of craters. Off-focus length classified as negative and positive has a substantial effect on crater diameters. According to the message of rotating angle positions from material to be engraved and the information of graph pixels from computer, a special graph is imparted to the material by integrating the Q- Switched Nd:YAG laser with the computer graph manipulation and the numerically controlled worktable. The crater diameter depends on laser beam divergence and laser focal length. The crater diameter changes from 50 micrometers to 300 micrometers , and the maximum of crater depth reaches one millimeter.

A laser-diode-pumped acoustic-optic Q-switched Nd:YVO4 slab laser with a hybrid resonator

A 32.1 W laser-diode-stack pumped acoustic-optic Q-switched Nd:YVO4 slab laser with hybrid resonator at 1064 nm was demonstrated with the pumping power of 112 W and repetition rate of 40 kHz, the pulse duration was 32.47 ns. The slope efficiency and optical-to-optical efficiency were 37 and 28.7%, respectively. At the repetition rate of 20 kHz and pumping power of 90 W, the average output power and pulse duration were 20.4 W and 20.43 ns, respectively. With the pumping power of 112 W, the beam quality M-2 factors in CW operation were measured to be 1.3 in stable direction and 1.6 in unstable direction.

Repetition rate stabilization of the SBS Q-switched fiber laser by external injection

Repetition rate fluctuation is one of the main drawbacks of the low-threshold stimulated Brillouin scattering (SBS) Q-switched fiber laser. A method to stabilize the repetition rate is proposed in this paper by injecting a square-wave modulated light. It is measured experimentally that variance of the repetition rate can be improved from similar to 20% to similar to 1% of the period. It is also found that effectiveness of the method depends on modulation frequency and duty cycle of the injection. Its working mechanism is analyzed qualitatively. (C) 2009 Optical Society of America

Laser diode array side-pumped acousto-optic induced unidirectional operation Q-switched Nd : YAG slab ring laser

A laser-diode array (LDA) side-pumped Nd:YAG slab ring laser is described that incorporates a prism-shaped acousto-optic modulator to enforce unidirectional operation and Q-switching. When pumped by the maximum power of 50 W, Q-switched energies of 3.6 mJ and 50 ns duration, corresponding to a peak power of 72 kW, are obtained. (C) 1999 Society of Photo-Optical Instrumentation Engineers. [S0091-3286(99)01306-9].

LD抽运的Nd：YLF／Cr^4＋：YAG被动调Q激光器

报道了激光二极管（LD）抽运的Nd：YLF激光器，采用平凹腔结构，分别用两片Cr^4＋：YAG可饱和吸收晶体，实现了被动调Q，输出激光波长为1053nm。采用厚度为0．5mm小信号透过率为90％的Cr^4＋ YAG，在泵浦功率最大为17W时，输出脉冲宽度为60．6ns，平均功率为1．5W，重复频率为9．5kHz，单脉冲能量为157．9mJ；采用厚度为0．55mm小信号透过率为95％的Cr^4＋ YAG，在泵浦功率最大为17W时，输出脉冲宽度为68．6ns，平均功率为1．35W，重复频率为14kHz，单脉冲

边缘泵浦被动调Q的Nd：YAG薄片激光器

文中报道了一台采用激光二极管部分边缘泵浦方式的高功率薄片激光器，晶体尺寸是1 mm×10 mm×60 mm。Cr4+：YAG被用来作为被动调Q晶体，在重复频率高于10kHz时，获得了脉宽10ns，平均功率70W，斜线效率为36\%的激光输出。通过控制泵浦光束直径的大小，我们在厚度方向得到了近似衍射极限的光束输出。整个激光器结构紧凑，大小为60 mm×174 mm×150 mm。

Kilohertz electro-optic Q-switched Nd : YAG ceramic laser

We investigate the lasing characteristics of a laser-diode-array side-pumped electro-optic Q-switched Nd:Y3Al5O12 ceramic laser operating at 1000 Hz pulse repetition rate. Using a YAG poltcrystalline rod with Nd3+ concentration at 1 at.% as the gain medium, pumping with 808 nm laser-diode-arrays, the Q-switched laser output at 1064 nm wavelength with 23 mJ pulse energy and less than 12 ns FWHM pulse width are obtained at a pumping power of about 400 W, the slope efficiency is around 15%, the output beam divergence angle is about 1.2 mrad.