The correlation between preferred orientation and performance of ITO thin films

The tin-doped indium oxide (ITO) thin films were prepared by reactive thermal evaporation on the glass substrates. The effects of substrate temperatures (T-s) on the grain preferred orientation, the electrical and optical properties of ITO films were studied. X-ray diffraction (XRD) patterns indicated that the preferred orientation of film changes from (222) to (400) as T, > 200 degrees C. It can be explained by that the low-index crystallographic planes are easier to be formed when the adatoms have high surface mobility. The Hall measurements indicated that both the concentration and mobility of carrier increase with increasing T,,,. The grain orientation of film does not influence the transmissivity and the carrier concentration, but enhances the carrier mobility. The transmissivity of ITO films is over 90% in the visible wavelength region (except that of the film deposited at 125 degrees C). A minimum resistivity of 5 X 10-4 Omega cm is achieved for the (400) preferred orientation film. Thus, the highest figure of merit of 3.5 x 10(-2) square/Omega is obtained for the film with (400) preferred orientation. The correlation between the preferred orientation and electrical and optical properties are discussed.

Optical analysis of dislocation-related physical processes in GaN-based epilayers

In this paper, recent progresses in optical analysis of dislocation-related physical properties in GaN-based epilayers are surveyed with a brief review. The influence of dislocations on both near-band edge emission and yellow luminescence (YL) is examined either in a statistical way as a function of dislocation density or focused on individual dislocation lines with a high spatial resolution. Threading dislocations may introduce non-radiative recombination centers and enhance YL, but their effects are affected by the structural and chemical environment. The minority carrier diffusion length may be dependent on either dislocation density or impurity doping as confirmed by the result of photovoltaic spectra. The in situ optical monitoring of the strain evolution process is employed during GaN heteroepitaxy using an AIN interlayer. A typical transition of strain from compression to tension is observed and its correlation with the reduction and inclination of threading dislocation lines is revealed. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

The effects of LT AlN buffer thickness on the optical properties of AlGaN grown by MOCVD and Al composition inhomogeneity analysis

We have investigated the growth of AlGaN epilayers on a sapphire substrate by metalorganic chemical vapour deposition using various low-temperature ( LT) AlN buffer thicknesses. Combined scanning electron microscopy and cathodoluminescence investigations reveal the correlation between the surface morphology and optical properties of AlGaN films in a microscopic scale. It is found that the suitable thickness of the LT AlN buffer for high quality AlGaN growth is around 20 nm. The Al compositional inhomogeneity of the AlGaN epilayer is attributed to the low lateral mobility of Al adatoms on the growing surface.

Correlated structural and optical investigation of terbium-doped zinc oxide nanocrystals

Tb3+-doped zinc oxide nanocrystals with a hexagonal wurzite structure were successfully prepared by reaction between Zn-O-Tb precursors and LiOH in ethanol. Good incorporation of Tb3+ in ZnO nanocrystals is proved by XRD, FTIR, PL and PLE measurements. The presence of acetate complexes to zinc atoms on particle surfaces is disclosed by FTIR results. Emission from both Tb3+ ions and surface states in ZnO matrix, as well as their correlation were observed. The luminescence mechanism is discussed. (C) 2000 Elsevier Science B.V. All rights reserved.

Nonlinear optical properties of semiconductor quantum wells under intense terahertz radiation

The nonlinear optical properties of semiconductor quantum wells driven by intense in-plane terahertz electric fields are investigated theoretically by employing the extended semiconductor Bloch equations. The dynamical Franz-Keldysh effect of the optical absorption near the band edge is analyzed with Coulomb correlation among the carriers included. The in-plane terahertz field induces a variety of behavior in the absorption spectra, including terahertz replicas of the (dark) 2p exciton and terahertz sidebands of the 1s exciton. The dependence of these interesting features on the intensity, frequency, and phase of the terahertz field is explored in detail.

Six-wave mixing phase-dispersion by optical heterodyne detection in dressed reverse N-type four-level system

We have investigated the dressed effects of non-degenerate four-wave mixing (NDFWM) and demonstrated a phase-sensitive method of studying the fifth-order nonlinear susceptibility due to atomic coherence in RN-type four-level system. In the presence of a strong coupling field, NDFWM spectrum exhibits Autler-Townes splitting, accompanied by either suppression or enhancement of the NDFWM signal, which is directly related to the competition between the absorption and dispersion contributions. The heterodyne-detected nonlinear absorption and dispersion of six-wave mixing signal in the RN-type system show that the hybrid radiation-matter detuning damping oscillation is in the THz range and can be controlled and modified through the colour-locked correlation of twin noisy fields.

Structural and optical changes in GaAs/InAs/GaAs structure induced by thermal annealing

Self-organized InAs quantum; dots sheets are grown on GaAs(100) substrate and tapped by 80nm GaAs layer with molecular beam epitaxy. Samples were annealed and characterized with Raman spectra, transmission electron microscopy (TEM) and photolumincscence (PL). The Raman spectra indicates arsenic clusters in the GaAs capping layer. The TEM analysis revealed the relaxation of strain in some InAs islands with the introduction of the network of 90 dislocations. In addition, the structural changes also lead to the changes of the PL spectra from me InAs islands. Their correlation was discussed, Our results suggest:est that annealing may be used to intentionally modify me properties of self-organized InAs islands on GaAs.

Pressure Effects on the Structural, Electronic, and Optical Properties of Si-n@SWCNTs

Well-ordered single, double/four parallel, three/four-strands helical chains, and five-strand helical chain with a single atom chain at the center of Si nanowires (NWs) inside single-walled carbon nanotubes (Si-n@SWCNTs) are obtained by means of molecular dynamics. On the basis of these optimized structures, the structural evolution of Si-n@SWCNTs subjected to axial stress at low temperature is also investigated. Interestingly, the double parallel chains depart at the center and transform into two perpendicular parts, the helical shell transformed into chain, and the strand number of Si NWs increases during the stress load. Through analyzis of pair correlation function (PCF), the density of states (DOS), and the z-axis polarized absorption spectra of Si-n@SWCNTs, we find that the behavior of Si-n@SWCNTs under stress strongly depends on SWCNTs' symmetry, diameter, as well as the shape of Nws, which provide valuable information for potential application in high pressure cases such as seabed cable.

Theoretical studies of nonlinear optical properties of compounds K(4)Ln(2)(CO3)(3)F-4 (Ln=Pr, Nd, Sm, Eu, Gd)

K(4)Ln(2)(CO3)(3)F-4 (Ln=Pr, Nd, Sm, Eu, Gd) is a special type of frequency doubling compound, whose crystal structure exhibits a scarcity of fluorine ions. This leads to two different coordination polyhedrons in the general position of K(2) atoms: [K(2)O6F(1)(2)F(2)] and [K(21)O6F(1)(2)] in a 2/1 ratio. The chemical bonding structures of all constituent atoms of the compound K4Gd2(CO3)(3)F-4 (KGCOF) are comprehensively studied; moreover, the relationship between the chemical bonding structure and the nonlinear optical (NLO) properties is investigated from the chemical bond viewpoint. The theoretical prediction of the NLO tensor coefficient d(11) of KGCOF is in agreement with experimental observation. Theoretical analyses show that the nonlinearity of this crystal type mainly originates from K-O bonds. In addition, the correlation between the NLO tensor d(11) and the refractive index n(0) of KGCOF is discussed. (C) 2000 American Institute of Physics. [S0021-8979(00)07506-X].

Correlation between Discharging Property and Coatings Microstructure during Plasma Electrolytic Oxidation

The voltage-current properties during plasma electrolytic discharge were determined by measuring the current density and cell voltage as functions of processing time and then by mathematical transformation. Correlation between discharge I-V property and the coatings microstructure on aluminum alloy during plasma electrolfic oxidation was determined by comparing the voltage-current properties at different process stages with SEM results of the corresponding coatings. The results show that the uniform passive film corresponds to a I-V property with one critical voltage, and a compound of porous layer and shred ceramic particles corresponds to a I-Vproperty with two critical voltages. The growth regularity of PEO cermet coatings was also studied.

Optical Diagnostic and Modeling Solution Growth Process of Sodium Chlorate Crystals

Both a real time optical interferometric experiment and a numerical simulation of two-dimension non-steady state model were employed to study the growth process of aqueous sodium chlorate crystals. The parameters such as solution concentration distribution, crystal dimensions, growth rate and velocity field were obtained by both experiment and numerical simulation. The influence of earth gravity during crystal growth process was analyzed. A reasonable theory model corresponding to the present experiment is advanced. The thickness of concentration boundary layer was investigated especially. The results from the experiment and numerical simulation match well.

Growth and optical properties of peculiar ZnO tetrapods

Regular ZnO tetrapods with different morphologies have been obtained on Si(100) substrate via the chemical vapour deposition approach. Varying the growth temperature and gas rate, we have obtained different structured ZnO materials: tetrapods with a large hexagonal crown, a flat top and a small hexagonal crown. The results suggest that these tetrapods are all single crystals with a wurtzite structure that grow along the (0001) direction. However, photoluminescence spectra shows that their optical properties are quite different: for those with large hexagonal crown, the green emission overwhelms that of the near band-edge (NBE) ultraviolet (UV) peak, while others have only a strong NBE UV peak at ~386 nm.

Steady Patterns of Microparticles Formed by Optical Tweezers

In this paper, we propose a method for forming steady patterns of microparticles in a dispersion using optical tweezers. We demonstrate how to control the congregation of particles in a dispersion and to manually fabricate a pattern, The steady pattern (nay be useful for in-depth research, and the method will have applications in biology and nanotechnology.

Optical fringe multiplication technique with TEM nano-moiré method

In this paper, a nano-moiré fringe multiplication method is proposed, which can be used to measure nano-deformation of single crystal materials. The lattice structure of Si (111) is recorded on a film at a given magnification under a transmission microscope, which acts as a specimen grating. A parallel grating (binary type) on glass or film is selected as a reference grating. A multiplied nano-moiré fringe pattern can be reproduced in a 4f optical filter system with the specimen grating and the prepared reference grating. The successful results illustrate that this method can be used to measure deformation in nanometre scale. The method is especially useful in the measurement of the inhomogeneous displacement field, and can be utilized to characterize nano-mechanical behaviour of materials such as dislocation and atomic bond failure.