36 resultados para OUTER GALACTIC DISK


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The heat generation in a flashlamp-pumped Nd:glass disk amplifier is studied by the simulation of the whole pumping process, which is based on the ray-tracing method. The results of temperature rise distribution as well as gain distribution are presented. The evolution of heat generation in disk during the pumping process is discussed in detail. Some main factors related with the thermal effect, such as the quantum efficiency, fluorescence lifetime, and pulse duration, are investigated through studying the ratio of the heat generation to energy storage in the gain medium. The influence of each parameter on heat generation is studied carefully, and the results provide ways to decrease the heat generation during the pumping process. (c) 2005 Society of Photo-Optical Instrumentation Engineers.

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In this paper, we demonstrated a dual-wavelength competitive output in Nd:Y3SC1.5Al3.5O12 ceramic disk laser. Different dual-wavelength output behaviors for Nd:YSAG and Nd:YAG ceramic disk laser were investigated and discussed. By applying the energy transfer model, we suggested the reasonable explanation for this new phenomenon as the disordered replacing of Al3+ ions by Sc3+ ions. The main advantage of the dual-wavelength ceramic laser is the possibility to serve as the seed source to generate Terahertz radiation. (C) 2008 Elsevier B.V. All rights reserved.

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Iron deficiency can induce cyanobacteria to synthesize siderophore receptor proteins on the outer membrane to enhance the uptake of iron. In this study, an outer membrane of high purity was prepared from Anabaena sp. PCC 7120 based on aqueous polymer two-phase partitioning and discontinuous sucrose density ultra-centrifugation, and the induction of outer membrane proteins by iron deficiency was investigated using 2-D gel electrophoresis. At least. five outer membrane proteins were newly synthesized or significantly up-regulated in cells transferred to iron-deficient conditions, which were all identified to be siderophore receptor proteins according to MALDI-TOF-MS analyses. Bacterial luciferase reporter genes luxAB were employed to monitor the transcription of the encoding genes. The genes were induced by iron deficiency at the transcriptional level in different responsive modes. Luciferase activity expressed from an iron-regulated promoter may be used as a bioreporter for utilizable iron in natural water samples. (C) 2009 National Natural Science Foundation of China and Chinese Academy of Sciences. Published by Elsevier Limited and Science in China Press. All rights reserved.

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Outer membrane proteins (OMPs) of bacteria are key molecules interacting with the host environment. Flavobacterium columnare, a pathogen-causing columnaris disease of fish worldwide, was studied in order to understand the composition of its OMPs. The sarcosine-insoluble membrane fraction of the OMPs was analysed using sodium dodecyl sulphate polyacrylamide gel electrophoresis (SDS-PAGE) in combination with reverse-phase high-performance liquid chromatography-tandem mass spectrometry (RP-HPLC MS/MS). Thirty-six proteins were identified, including proteins involved in cell wall/membrane biogenesis, specific transport of various nutrients and in essential metabolism. The present study is the first report on the OMPs of F. columnare, and may serve as the basis for understanding the pathogenesis of the bacterium.

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ZnO films were grown at low pressure in a vertical metal-organic vapor deposition (MOCVD) reactor with a rotating disk. The structural and morphological properties of the ZnO films grown at different disk rotation rate (DRR) were investigated. The growth rate increases with the increase of DRR. The ZnO film grown at the DRR of 450 revolutions per minute (rpm) has the lowest X-ray rocking curve full width at half maximum and shows the best crystalline quality and morphology. In addition, the crystalline quality and morphology are improved as the DRR increased but both are degraded when the DRR is higher than 450 rpm. These results can help improve in understanding the rotation effects on the ZnO films grown by MOCVD. (C) 2007 Elsevier B.V. All rights reserved.

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We have studied the single-electron and two-electron vertically assembled quantum disks in an axial magnetic field using the effective mass approximation. The electron interaction is treated accurately by the direct diagonalization of the Hamiltonian matrix. We calculate the six energy levels of the single-electron quantum disks and the two lowest energy levels of the two-electron quantum disks in an axial magnetic field. The change of the magnetic field strongly modifies the electronic structures as an effective potential, leading to the splitting of the levels and the crossings between the levels. The effect of the vertical alignment on the electronic structures is discussed. It is demonstrated that the switching of the ground-state spin exists between S=0 and S=1. The energy difference DeltaE between the lowest S=0 and S=1 states is shown as a function of the axial magnetic field. It is also found that the variation of the energy difference between the lowest S=0 and S=1 states in the strong-B S=0 state is fairly linear. Our results provide a possible realization for a qubit to be fabricated by current growth techniques. (C) 2004 American Institute of Physics.

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A semi-insulating GaAs single crystal ingot was grown in a recoverable satellite, within a specially designed pyrolytic boron nitride crucible, in a power-traveling furnace under microgravity. The characteristics of a compound semiconductor single crystal depends fundamentally on its stoichiometry, i.e. the ration of two types of atoms in the crystal. a practical technique for nondestructive and quantitative measuring stoichiometry in GaAs single crystal was used to analyze the space-grown GaAs single crystal. The distribution of stoichiometry in a GaAs wafer was measured for the first time. The electrical, optical and structural properties of the space-grown GaAs crystal were studied systematically, Device fabricating experiments prove that the quality of field effect transistors fabricated from direct ion-implantation in semi-insulating GaAs wafers has a close correlation with the crystal's stoichiometry. (C) 2000 Elsevier Science S.A. All rights reserved.

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GaAs single crystal has been grown in recoverable satellite. Hall measurements indicate that the GaAs shows semi-insulating behavior. The structural properties of the crystal have been improved obviously, and their uniformity has been improved as well. The stoichiometry and its distribution in space-grown GaAs are improved greatly compared with the GaAs single crystal grown terrestrially. The properties of integrated circuits made by direct ion-implantation on space-grown GaAs are better than those made on ground-grown materials. These results show that the stoichiometry in semi-insulating GaAs seriously affects the properties of related devices.

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Polycrystalline silicon (polysilicon) has been used as an important structural material for microelectro-mechnical systems (MEMS) because of its compatibility with standard integrated circuit (IC) processes. As the structural layer of micromechanical high resonance frequency (high-f) and high quality factor (high-Q) disk resonators, the low residual stress and low resistivity are desired for the polysilicon thin films. In the present work, we investigate the effect of deposition and annealing conditions on the residual stress and resistivity for in-situ deposited low pressure chemical vapor deposition (LPCVD) polysilicon films. Low residual stress (-100 MPa) was achieved in in-situ boron-doped polysilicon films deposited at 570 degrees C and annealed at 1000 degrees C for 4 hr. The as-deposited amorphous polysilicon films were crystallized by the rapid thermal annealing and have the (111)-preferred orientation, the low tensile residual stress is expected for this annealed film, the detailed description on this work will be reported soon. The controllable residual stress and resistivity make these films suitable for high-Q and bigh-f micro-mechanical disk resonators.

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The basic principle and critical characteristics of unattended ground sensors (UGS) based on fiber optic disk accelerometers are introduced. Mechanical principles of fiber optic disk accelerometers (FODA) and calculation methods are presented. An FODA with a high sensitivity of 120rad/g and a resonance frequency of 300Hz is designed and used for detection in military affair.

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We have studied the single-electron and two-electron vertically-assembled quantum disks in an axial magnetic field using the effective mass approximation. The electron interaction is treated accurately by the direct diagonalization of the Hamiltonian matrix. We calculate the six criergy levels of single-electron quantum disks and the two lowest energy levels of two-electron quantum disks in an axial magnetic field. The change of the magnetic field as an effective potential strongly modifies the electronic structures. leading to splittings and crossings between levels The results demonstrate the switching between the around states with the total spins S = 0 and S = 1. The switching results in a qubit allowed to fabricate by current growth techniques.

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The effects ofdisk flexibility and multistage coupling on the dynamics of bladed disks with and without blade mistuning are investigated. Both free and forced responses are examined using finite element representations of example single and two-stage rotor models. The reported work demonstrates the importance of proper treatment of interstage (stage-to-stage) boundaries in order to yield adequate capture of disk-blade modal interaction in eigenfrequency veering regions. The modified disk-blade modal interactions resulting from interstage-coupling-induced changes in disk flexibility are found to have a significant impact on (a) tuned responses due to excitations passing through eigenfrequency veering regions, and (b) a design's sensitivity to blade mistuning. Hence, the findings in this paper suggest that multistage analyses may be required when excitations are expected to fall in or near eigenfrequency veering regions or when the sensitivity to blade mistuning is to be accounted for Conversely, the observed sensitivity to disk flexibility also indicates that the severity of unfavorable structural interblade coupling may be reduced significantly by redesigning the disk(s) and stage-to-stage connectivity. The relatively drastic effects of such modifications illustrated in this work indicate that the design modifications required to alleviate veering-related response problems may be less comprehensive than what might have been expected.

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A semi-insulating (SI) GaAs single crystal ingot was successfully grown in a recoverable satellite. The two-dimensional distribution of stoichiometry in space-grown SI-GaAs single crystal wafer was studied nondestructively based upon x-ray Band diffraction. The avenge stoichiometry in the space-grown crystal is 0.50007 with mean square deviation of 6 x 10(-6), and shows a better stoichiametric property than the ground-grown SI-GaAs. The average etch pit density (EPD) of dislocations in the crystal revealed by molten KOH is 2.0 x 10(4) cm(-2), and the highest EPD is 3.1 x 10(4) cm(-2). This result indicates that the structural properly of the crystal is quite good.

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A semi-insulating GaAs single crystal ingot was grown in a recoverable satellite, within a specially designed pyrolytic boron nitride crucible, in a power-traveling furnace under microgravity. The characteristics of a compound semiconductor single crystal depends fundamentally on its stoichiometry, i.e. the ration of two types of atoms in the crystal. a practical technique for nondestructive and quantitative measuring stoichiometry in GaAs single crystal was used to analyze the space-grown GaAs single crystal. The distribution of stoichiometry in a GaAs wafer was measured for the first time. The electrical, optical and structural properties of the space-grown GaAs crystal were studied systematically, Device fabricating experiments prove that the quality of field effect transistors fabricated from direct ion-implantation in semi-insulating GaAs wafers has a close correlation with the crystal's stoichiometry. (C) 2000 Elsevier Science S.A. All rights reserved.

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Rotating minidisk-disk electrode (RMDDE) was developed by replacing ring electrode of rotating ring-disk electrode (RRDE) with a minidisk electrode. Its applications were demonstrated by studying electrochemical reactions of ferricyanide and divalent copper. The replacement of ring electrode by minidisk electrode results in following advantages. First, the fabrication of RMDDE is easier than that of RRDE with the same electrode material. Second, there is more freedom in choosing electrode materials and sizes, since it is difficult to make thin ring electrodes of RRDE with fragile materials. Third, the replacement of ring electrode by minidisk electrode saves electrode materials, especially rare materials. Finally, the substitution of minidisk electrode for ring electrode allows using multiple minidisks for simultaneous monitoring of multiple components. Therefore, RMDDE is a promising generator-collector system, especially when special generator-collector systems are not commercially available, such as corrosion study and electrocatalysis study of new electrode materials.