75 resultados para Nonequilibrium Transitions


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A shock tube method is introduced to study the ionization–recombination kinetics of high temperature gas, in which a test gas is heated and ionized by a reflected shock wave and subsequently quenched by a strong rarefaction wave reflected on the end wall of the driver section as the main cooling wave associated with a rarefaction wave incident back into region 5 when the reflected shock wave interacts with the contact surface. As the quenching rate of the strong rarefaction wave reaches 106 K/s, a nonequilibrium ionization-recombination process occurs, during which the ion recombination with electrons dominates.

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Coherent population accumulations of multiphoton transitions induced by an ultrashort pulse train in a two-level polar molecule are investigated theoretically by solving the density-matrix equations without invoking any of the standard approximations. It is shown due to the effects of permanent dipole moments, that the population accumulation of multiphoton transitions can be obtained in the polar molecule. Moreover, the population accumulations depend crucially on the relative phase between two sequential pulses, and the period in which the maximum population accumulation occurs is 2 pi/N in N-photon transitions.

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Er3+-doped halide modified tellurite glasses were synthesized by conventional melting and quenching method. The Judd-Ofelt analysis was performed on the absorption spectra and the transition probabilities, excited state lifetimes, and the branching ratios were calculated and discussed. The intense infrared and visible fluorescence spectra under 980 nm excitation were obtained. Strong upconversion signal was observed at pumping power as low as 30 mW in the glasses with halide ions. The upconversion mechanisms and power dependent intensities were discussed, which showed two-photon process are involved for the green and red emissions. The decay times of the emitting states and the corresponding quantum efficiency were determined and explained. (C) 2004 American Institute of Physics.

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Er3+/Yb3+-codoped novel oxyfluoride bismuth-germanium glass was prepared and its up-conversion fluorescence property under 975 nm excitation has been studied. Intense green and weak red emissions centered at 525, 546, and 657 nm, corresponding to the transitions 2H(11/2) -> I-4(15/2), S-4(3/2) -> I-4(15/2), and F-4(9/2) -> I-4(15/2), respectively, were observed at room temperature. The possible up-conversion mechanism was also evaluated. The optimal Yb3+-Er3+ concentration ratio is found based on the direct lifetime measurements of excited levels for Er3+ ion. The structure of this novel oxyfluoride bismuth-germanium glass has been investigated by peak-deconvolution of FT-Raman spectrum, and the structural information was obtained from the peak wavenumbers. This novel oxyfluoride bismuth-germanium glass with relatively lower maximum phonon energy (similar to 731 cm(-1)) can be used as potential host material for up-conversion lasers. (c) 2005 Elsevier B.V. All rights reserved.

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By means of the second derivative of the ground-state and first-excited energy, the quantum phase transitions (QPTs) for the distorted diamond chain (DDC) with ferromagnetic and antiferromagnetic frustrated interactions and the trimerized case are investigated, respectively. Our results show the plentiful quantum phases owing to the spin interaction competitions in the model. Meanwhile, by using the transfer-matrix renormalization-group technique, we study the two-site thermal entanglement of the DDC model in the thermodynamic limit for a further understanding of the QPTs.

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In this Letter, the classical two-site-ground-state fidelity (CTGF) is exploited to identify quantum phase transitions (QPTs) for the transverse field Ising model (TFIM) and the one-dimensional extended Hubbard model (EHM). Our results show that the CTGF exhibits an abrupt change around the regions of criticality and can be used to identify QPTs in spin and fermionic systems. The method is especially convenient when it is connected with the density-matrix renormalization group (DMRG) algorithm. (C) 2008 Elsevier B.V. All rights reserved.

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Photoluminescence (PL) spectra of the GaInNAs/GaAs single quantum well (SQW) with different N compositions are carefully studied in a range of temperatures and excitation power densities. The anomalous S-shape temperature dependence of the PL peak is analysed based on the competition and switching-over between the peaks related to N-induced localized states and the peak related to interband excitonic recombination. It is found that with increasing N composition, the localized energy increases and the turning point of the S-shape temperature dependence occurs at higher temperature, where the localized carriers in the bandtail states obtain enough thermal activation energy to be dissociated and delocalized. The rapid thermal annealing (RTA) effectively reduces the localized energy and causes a decrease of the switching-over temperature.

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A self-consistent calculation of the subband energy levels of n-doped quantum wells is studied. A comparison is made between theoretical results and experimental data. In order to account for the deviations between them, the ground-state electron-electron exchange interactions, the ground-state direct Coulomb interactions, the depolarization effect, and the exciton-like effect are considered in the simulations. The agreement between theory and experiment is greatly improved when all these aspects are taken into account. The ground-to-excited-state energy difference increases by 8 meV from its self-consistent value if one considers the depolarization effect and the exciton-like effect only. It appears that the electron-electron exchange interactions account for most of the observed residual blueshift for the infrared intersubband absorbance in AlxGa1-xN/GaN multiple quantum wells. It seems that electrons on the surface of the k-space Fermi gas make the main contribution to the electron-electron exchange interactions, while for electrons further inside the Fermi gas it is difficult to exchange their positions. (C) 2004 Elsevier B.V. All rights reserved.

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We introduce the concept of the Loschmidt echo (LE) to the space of the reduced density matrix of spin and fermionic systems to study the density matrix LEs (DMLEs) of the one-dimensional extended Hubbard model and the transverse field Ising model. Our results show that the DMLEs are remarkably influenced by the criticality of the system, and the method is a convenient way to study quantum phase transitions.

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Infrared absorption in GaAs/AlxGa1-xAs multiple quantum wells is investigated using a polarizer. Two main peaks, with wave numbers 723 and 1092 cm(-1), are observed. The peak with wave number 1092 cm(-1) corresponds to the 0 -> 1 intersubband transition, while the other one corresponds to the intrasubband transition. The polarized absorbance is one order of magnitude higher than the unpolarized one. The authors attribute the intrasubband transition to the plasma oscillation in the quantum wells.

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Major State Basic Research Project 973 program of China 2006CB604907;National Science Foundation of China 60776015 60976008;863 High Technology R&D Program of China 2007AA03Z402

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National Basic Research Program of China 2007CB924904;Chinese Academy of Sciences KICX2.YW.W09-1

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We have investigated transitions above and below band edge of GaNAs/GaAs and InGaNAs/GaAs single quantum wells (QWs) by photoluminescence (PL) as well as by absorption spectra via photovoltaic effects. The interband PL peak is observed to be dominant under high excitation intensity and at low temperature. The broad luminescence band below band edge due to the nitrogen-related potential fluctuations can be effectively suppressed by increasing indium incorporation into InGaNAs. In contrast to InGaNAs/GaAs QWs, the measured interband transition energy of GaNAs/GaAs QWs can be well fitted to the theoretical calculations if a type-II band lineup is assumed. (C) 2001 Elsevier Science B.V. All rights reserved.

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Photoluminescence measurements have been performed on cubic GaN films with carrier concentration as low as 3 x 10(13) cm(-3). From the temperature and excitation intensity dependence, the emission lines at 3.268, 3.150 and 3.081 eV were assigned to the excitonic, donor-acceptor pair, and free-to-acceptor transitions, respectively Additionally, we observed two additional emission lines at 2.926 and 2.821 eV, and suggested that they belong to donor-acceptor pair transitions. Furthermore, from the temperature dependence of integral intensities, we confirmed that three donor-acceptor pair transitions (3.150, 2.926, and 2.821 eV) are from a common shallow donor to three different accepters. The excitonic emission at 3.216 eV has a full-width-at-half-maximum value of 41 meV at room temperature, which indicates a good optical quality of our sample.