Phase shift caused by microwave field based on light storage

We have theoretically investigated the phase shift of a probe field for a four-level atomic system interacting successively with two fields tuned near an EIT resonance of an atom, a microwave field, and a coupling field. It has been found that the phase of retrieved signal has been shifted due to the cross-phase modulation when the stored spin wave was disturbed by a microwave. Because of the low relaxation rates of the ground hyperfine state, our proposed technique can impart a large phase rotation onto the probe field with low absorption of retrieved field and very low intensity of the microwave field.

Ultranarrow absorptive spectral line induced by microwave field

This paper investigates the absorptive spectral lines of four-level atomic system driven by a coupling, probe and microwave fields. Due to the perturbation of the microwave field, the original electromagnetically induced transparency is changed to electromagnetically induced absorption and the absorptive spectral line can be very narrow. This ultranarrow spectral line has potential applications to the microwave atomic frequency standard and the measurement of very weak magnetic field.

Growth of composite sapphire/Ti : sapphire by the hydrothermal method

Composite sapphire/Ti:sapphire crystals for high-power laser application were grown by the hydrothermal method. The results of the X-ray rocking curve analysis indicate high crystalline quality of the surface Al2O3 material. The strong bonding between the overgrown Al2O3 and seed Ti:Al2O3 crystals is indispensable for withstanding high thermal stresses produced by intense optical pumping. The optical loss at the boundary of the composite crystal is considerably low, indicating the lack of scattering centers. (c) 2005 Elsevier B.V. All rights reserved.

Effect of La3+ on microwave dielectric properties of (Pb0.45Ca0.55) (Fe0.5Nb0.5)O-3 ceramics

In this work, microwave dielectric properties of A-site substitution by La3+ in (Pb0.45Ca0.55) (Fe0.5Nb0.5) 03 system were investigated. Microwave dielectric properties of A-site charge unbalance substitution of [(Pb0.45Ca0.55)(1-x) La-x] (Fe0.5Nb0.5)O-3(+) (P45CLFN) were improved because the solid solution of small amount of surplus La3+ with (Pb, Ca)(2+) could eliminate oxygen vacancies, and the formation of secondary phase (pyrochlore) was also caused by surplus La3+. The decreasing of dielectric constant with the increase of La3+ content is due to the formation of pyrochlore. The grain size is changed slightly and Q(f) values (7000 similar to 7300 GHz) are almost unchanged at x = 0.02 similar to 0.10, but the temperature coefficient of resonant frequency (TCF) are increased and changed from negative to positive. TCF is zero at x 0.075 with Q(f) = 7267 GHz and K = 89. TCF of all specimens are within +/- 5 x 10(-6)degrees C-1.

Low-temperature hydrothermal growth of oriented [0001] ZnO film

Well-aligned ZnO films have been successfully prepared by using low-temperature hydrothermal approach on (0001) sapphire substrates that were pre-coated with a ZnO nano-layer by dip-coating. The characterizations of scanning electron microscopy (SEM) and X-ray diffraction (XRD) indicate that the ZnO films consist of hexagonal rods that grow along the c axis based on the sapphire substrates. It is found that the size of ZnO rods can be adjusted by an aqueous solution with some methenamine. (c) 2006 Elsevier B.V. All rights reserved.

Hydrothermal growth and characterization of ZnO crystals

ZnO crystals with dimensions of 30 x 38 x 8 turn 3 have been grown by the hydrothermal method using a mixed solution of KOH, LiOH and H2O2. The growing rates for +c(0001) and -c(000 (1) over bar) were 0.17 and 0.09 mm/day, respectively. The crystal color was very light green for +c sector and dark brown for -c sector. For the +c sector, the resistivity at room temperature was 80 0 cm, the carrier concentration was about 10(4)/cm(3), and the mobility was about 100 cm(2)/Vs. The full-width at half-maximum (FWHM) of double axis X-ray rocking curve for the polished Zn face cut from +c sector was 45 arcsec. The photoluminescence (PL) spectrum and the absorption spectrum of +c part of the crystals at room temperature were also reported and discussed in this paper. (c) 2008 Elsevier B.V. All rights reserved.

STUDY ON MICROWAVE CYCLOTRON RESONANCE OF HIGH-MOBILITY GaAs/Al-0.35 Ga-0.65 As TWO-DIMENSIONAL ELECTRON GAS

The properties of electron states in the presence of microwave irradiation play a key role in understanding the oscillations of longitudinal resistance and the zero-resistance states in a high-mobility two-dimensional electron gas(2DEG) in low magnetic field. The properties of electron states in a high-mobility and low-density GaAs/Al0.35Ga0.65As 2DEG in the presence of Ka-band microwave irradiation were studied by reflectance-based optically detected cyclotron resonance(RODCR). The influences of the direction of microwave alternating electronic field, wavelength of the laser, and temperature on RODCR results were discussed. The results show that RODCR measurements provide a convenient and powerful method for studying electron states in 2DEG.

Choice of calibration equations in calibrating microwave test fixtures

The error theory of linear equation system has been applied to the calibration procedure of microwave network analyser in this article. A new explanation for the choice of the linear calibration equations is proposed and a general principle for choosing calibration equations is presented. The method can also be used to predict the occurrence of the problem of frequency limitation at some periodic frequencies. This principle is employed to the thru-short-delay (TSD) method and the solution using the chosen equations gives the most accurate results. A good agreement between the theory and the experiment has been obtained.

Optical microwave generation based on DFB lasers

A new device of two parallel distributed feedback ( DFB) laser integrated monolithically with Y-branch waveguide coupler was fabricated by means of quantum well intermixing. Optical microwave signal was generated in the Y-branch waveguide coupler through frequency beating of the two laser modes coming from two DFB lasers in parallel, which had a small difference in frequency. Continuous rapidly tunable optical microwave signals from 13 GHz to 42 GHz were realized by adjusting independently the driving currents injected into the two DFB lasers.

Narrow-Linewidth Microwave Generation Using a Self-Injected DBR Laser Diode

A novel technique for generating narrow-linewidth microwave or millimeter-wave signals is proposed. In this scheme, a delayed self-injected distributed Bragg reflector laser diode, which is tuned by a low-frequency square-wave voltage, is used to generate two correlated lightwaves simultaneously. Experiments show that the 10-dB linewidth of generated microwave signals is reduced from 147 MHz to 68 kHz utilizing the proposed self-injection technique.

Effect of Ka-band microwave on the spin dynamics of electrons in a GaAs/Al0.35Ga0.65As heterostructure

We report experimental results of the effect of Ka-band microwave on the spin dynamics of electrons in a two-dimensional electron system (2DES) in a GaAs/Al0.35Ga0.65As heterostructure via time-resolved Kerr rotation measurements. While the microwave reduces the transverse spin lifetime of electrons in the bulk GaAs, it significantly increases that in the 2DES, from 745 to 1213 ps, when its frequency is close to the Zeeman splitting of the electrons in the magnetic field. Such a microwave-enhanced spin lifetime is ascribed to the microwave-induced electron scattering which leads to a "motional narrowing" of spins via D'yakonov-Perel' mechanism.

Microwave generation in an electro-absorption modulator integrated with a DFB laser subject to optical injection

This paper presents a new technique to generate microwave signal using an electro-absorption modulator (EAM) integrated with a distributed feedback (DFB) laser subject to optical injection. Experiments show that the frequency of the generated microwave can be tuned by changing the wavelength of the external laser or adjusting the bias voltage of the EAM. The frequency response of the EAM is studied and found to be unsmooth due to packaging parasitic effects and four-wave mixing effect occurring in the active layer of the DFB laser. It is also demonstrated that an EA modulator integrated in between two DFB lasers can be used instead of the EML under optical injection. This integrated chip can be used to realize a monolithically integrated tunable microwave source. (C) 2009 Optical Society of America

Calibration of microwave network analyzer

This paper presents a systematic description of the methods for calibrating microwave network analyzer and test fixtures, and discusses the problems arising in the calibration. The general criteria for choosing calibration standards and corresponding algorithms are discussed and suggestions to overcome these problems and improve the calibration accuracy are also given. It has been found that for reciprocal test fixtures, the four equations obtained with the thru standard can be used at the same time. Meanwhile, the calibration accuracy can be improved. It has been shown that using the same calibration procedures but different algorithms may lead to the occurrence of frequency limitation.

Optical microwave generation using two parallel DFB lasers integrated with Y-branch waveguide coupler

A new device of two parallel distributed feedback (DFB) lasers integrated monolithically with Y-branch waveguide coupler was fabricated by means of quantum well intermixing. Optical microwave signal was generated in the Y-branch waveguide coupler through frequency beating of the two laser modes coming from two DFB laser in parallel, which had a small difference in frequency. Continuous rapid tuning of optical microwave signal from 13 to 42 GHz were realized by adjusting independently the driving currents injected into the two DFB lasers.