Sputtering induced by highly charged Pb-208(q+) bombardment on Al surface

Highly charged ions (HCls) carrying high Coulomb potential energy (E-p) could cause great changes in the physical and chemical properties of material surface when they bombard on the solid surface. In our work, the secondary ion yield dependence on highly charged Pbq+ (q = 4-36) bombardment on Al surface has been investigated. Aluminum films (99.99%) covered with a natural oxide film was chosen as our target and the kinetic energy (E-k) was varied between 80 keV and 400 keV. The yield with different incident angles could be described well by the equation developed by us. The equation consists of two parts due to the kinetic sputtering and potential sputtering. The physical interpretations of the coefficients in the said equation are discussed. Also the results on the kinetic sputtering produced by the nuclear energy loss on target Surface are presented.

Potential sputtering by Highly Charged Ion bombardment on Au surface

The sputtered particle yields produced by Pbq+ (q=4-36) with constant kinetic energy bombardment on An surface were measured. The sputtering Could be separated to two parts: no potential sputtering is observed when q<24 (E-pot = 9.6 keV) and the sputtering yield increases with E-pot(1.2) for the higher charge states of q >= 24. The potential sputtering is mainly contributed by the relaxation of electronic excitations on target surface produced by the potential energy transfer from projectile to target atoms.

Structural stability of C-60 films under the bombardment of 1.95 GeV Kr ions

The structural stability of C-60 films under the bombardment of 1.95 GeV Kr ions is investigated. The irradiated C-60 films were analyzed by Fourier Transform Infrared (FTIR) spectroscopy and Raman scattering technique. The analytical results indicate that the irradiation induced a decrease of icosahedral symmetry of C-60 molecule and damage of C-60 films; different vibration modes of C-60 molecule have different irradiation sensitivities; the mean efficient damage radius obtained from experimental data is about 1.47 nm, which is in good agreement with thermal spike model prediction.

Establishment of a micro-particle bombardment transformation system for Dunaliella saliva

In this study, we chronicle the establishment of a novel transformation system for the unicellular marine green alga, Dunaliella salina. We introduced the CaMV35S promoter-GUS construct into D. saliva with a PDS1000/He micro-particle bombardment system. Forty eight h after transformation, via histochemical staining, we observed the transient expression of GUS in D. salina cells which had been bombarded under rupture-disc pressures of 450 psi and 900 psi. We observed no GUS activity in either the negative or the blank controls. Our findings indicated that the micro-particle bombardment method constituted a feasible approach to the genetic transformation of D. salina. We also conducted tests of the cells' sensitivity to seven antibiotics and one herbicide, and our results suggested that 20 mu g/ ml of Basta could inhibit cell growth completely. The bar gene, which encodes for phosphinothricin acetyltransferase and confers herbicide tolerance, was introduced into the cells via the above established method. The results of PCR and PCR-Southern blot analyses indicated that the gene was successfully integrated into the genome of the transformants.

Genetic transformation in Kappaphycus alvarezii using micro-particle bombardment: a potential strategy for germplasm improvement

This study investigated the delivery of a SV40 promoter driving lacZ gene into cells of Kappaphycus alvarezii using particle bombardment. Thallus pieces 0.5-0.8 mm in diameter and 1 cm in length were prepared as gene recipients. Bombardment parameters of 450 psi (rupture pressures) x 6 cm (particle travel distances), 650 psi x 6 cm, 1,100 psi x 6 cm and 1,100 psi x 9 cm were used. A significant increase in transformation efficiency from about 33% under the rupture pressure of 450 psi to 87% at 650 psi was observed in transformed thalli. Most of the positive cells appeared in epidermal cells bombarded at 450 psi, whereas positive signals were seen in both epidermal and medullary cells at 650 psi. No positive transient expression was detected at a bombardment of 1,100 psi, or in negative or blank controls. For the conditions tested, the best parameter was obtained at 650 psi at a distance of 6 cm. Thus, the strategy of taking vegetative thalli as recipients, using particle bombardment, and combining this with micro-propagation, together with developing an in vivo selectable marker, is a viable way to produce stable transformants, to eliminate chimeric expression, and to achieve transgenic breeding in K. alvarezii.

MeV金离子辐照聚苯乙烯微球的各向异性形变

在低温条件下用Au离子辐照法实现了聚苯乙烯(PS)微球的各向异性形变.PS微球在离子辐照下呈现出不同于SiO2微球的形变特点.照后PS微球整体收缩,在平行于离子入射方向上收缩尤甚,使照后PS微球呈长轴垂直与离子入射方向的椭球.采用加掩膜辐照法,在同一晶体上特定区域实现微球的形变.此工作为重离子辐照在光子晶体中引入可控缺陷奠定了基础.

Influence of different post-treatments on the structure and optical properties of zinc oxide thin films

Zinc oxide (ZnO) films with c-oriented were grown on fused quartz glass substrates at room temperature using dc reactive magnetron sputtering. The as-grown films were annealed at 700 degrees C in air and bombarded by ion beam, respectively. The effects of post-treatments on the structural and optical properties of the ZnO films were investigated by X-ray diffraction (XRD), photoluminescence (PL), optical transmittance and absorption measurements. The XRD spectra indicate that the crystal quality of ZnO films has been improved by both the post-treatments. Compared with the as-grown sample, both annealed and bombarded samples exhibited blueshift in the UV emission peaks, and a strong green emission was found in the annealed ZnO film. In both optical transmittance and absorption spectra, a blueshift of the band-gap edge was observed in the bombarded film, while a redshift was observed in the annealed film. (c) 2004 Elsevier B.V. All rights reserved.

两种后处理方法对HfO2薄膜性能的影响

利用电子束蒸发和光电极值监控技术制备了氧化铪薄膜，并分别用两种后处理方法（空气中退火和氧等离子体轰击）对样品进行了处理．然后，对样品的透过率、吸收和抗激光损伤阈值进行了测试分析．实验结果表明，两种后处理方法都能不同程度地降低了氧化铪薄膜的吸收损耗、提高了抗激光损伤阈值．实验结果还表明，氧等离子体轰击的后处理效果明显优于热退火，样品的吸收平均值在氧等离子体后处理前后分别为34．8ppm和9．0ppm，而基频（1 064nm）激光损伤阈值分别为10．0J／cm^2和21．4J／cm^2．

谷子体细胞无性系变异和抗除草剂基因转化研究

谷子是我国北方具有区域重要性的禾谷类粮食作物。谷子的体细胞无性系变异和外源基因转化相对其它作物研究较少。本研究利用谷子生产的育种中应用的多个优良品种为材料，分析了谷子体细无性系变异发生的影响因素、变异性和频率、DNA分子水平变异和育种应用等问题;采用基因枪法和花粉管通道法，进行了谷子抗除草剂基因转化研究。 主要结果包括： 1. 通过几种外植体的愈伤组织诱导分析,找到了小花分化期前后的谷子幼穗是愈伤组织诱导的最好外植体.提出谷子愈伤组织可按生长状态和结构划分为质密型、松软型和松散型三种基本类型的观点。前两种为胚性愈伤组织并可相互转换，松软型愈伤组织生长状态稳定，可塑性好，是继代培养和因基化的首选类型。供试品种中豫谷1号、高39、郑407和矮宁黄为易培养品种，矮88、豫谷2号、系238、冀14号、C445和青丰谷为相对难培养品种。这些结果为谷子组织培养和生物技术操作提供了基础资料。 2. 首次对多个谷子品种较大群体的无性系变异进行了分析。结果表明，以R_2株系为单位的谷子体细胞无性系表现型变异频率平均为13.0%，不同基因型的变幅为4.3～32.9%;变异涉及株高、抽穗期、穗粒重、出谷率、叶鞘色、育性、抗病性、米色、穗型等多个性状，多数变异为株高和抽穗期等数量性状，少数为矮秆等质量性状：变异的性状多数能在R_3稳定并遗传给后代。从谷子体细胞无性系变异中选出了一批农艺性状得到改良的新品系，其中系103已进入省区域试验，并提供给多家育种单位作为亲本应用。 3. 将RAPD分析技术引入谷子体细胞无性系变异研究。豫谷2号无性系的RAPD多态性变化既有亲本带的缺失，也有新带的产生。用RAPD多态性变化的SMC值度量无性系同亲本相比DNA水平变异的大小，表现型发生变异的无性系,其SMC值分别为0.905～1.0;表现型未发生变异的无性系，RAPD多态性也可能发生变化，其SMC值分布为0.953～1.0。 4. 通过Gus基因瞬时表达单位数的比较，优化了JQ－700基因枪转化谷子松型愈伤组织的操作参数：质粒DNA用量3μg/mg钨粉，CaCl_2农度1.5M，亚精胺浓度40mM，样品室高度7cm，粗弹头为微弹载体，每皿愈伤组织用量1～2g，每次轰击钨粉用量50μg，轰击前4小时和轰击后16～20小时，用含蔗糖150g/l的高渗培养基处理。利用该技术体系，以bar基因为目的基因转化豫谷2号愈伤组织。经选择培养和植株再生，首次获得了抗0.1% bialaphos的正常可育植株，经PCR和Southern blot分析，bar基因已整合到转化体的基因组中，为创造抗除草剂的谷子新种质提供了材料和技术基础。 5. 研究了花粉管通道法转化和花粉介导的基因枪转化谷子的可行性。花粉管通道法转化后代中，获得了抗0.1% bialaphos的抗性植株，经X-gluc组织化学检测，抗性植株叶片的Gus反应为阳性。初步说明该植株可能为转化体，在谷子上为花粉管通道法转化的可行性提供了佐证。花粉介导的基因枪转化未获得转化体。 本文对体细胞无性系变异形成的原因和应用、无性系变异的分子生物学分析、以及谷子的外源基因转化方法等问题进行了讨论。

高赖氨酸蛋白基因的克隆及其转基因水稻植株的获得

水稻、玉米、小麦和大麦等许多主要禾本科作物的第一限制性氨基酸是赖氨酸。本文将一个来源于四棱豆的高赖氨酸蛋白基因导入水稻，以研究通过转基因改善蛋白质的可能，获得有经济价值和社会意义的转基因作物。 构建了含有高赖氨酸蛋白基因（Lys）、gus基因及植物选择标记潮霉素磷酸转移酶基因（hpt）的植物表达载体pBRLys;在pBRLys中，该高赖氨酸蛋白基因由目前已知最强的单子叶植物启动子玉米Ubiquitin 1启动子调控。用基因枪轰击法将pBRLys导入水稻幼胚或幼胚诱导的愈伤组织。共得到36株潮霉素抗性再生植株，经分子检测有22株为转基因植株。 实验中对影响水稻转化、再生和移栽一些条件进行了研究。从潮霉素筛选浓度、愈伤组织干燥处理、光照对分化的影响、多效唑的影响和移栽环境等做了一些简化和改善。 PCR检测、PCR-Southern杂交和Southern杂交表明潮霉素基因和Lys基因已经整合到转基因水稻的基因组中，外源基因在转基因水稻基因组中以1个拷贝以上的形式存在。同时，GUS组织化学染色表明转基因水稻植株的叶、茎和根中都有gus基因的表达。 初步对5株转基因植株进行赖氨酸含量测定，结果表明：与非转化对照相比，有两棵植株赖氨酸含量提高，分别增加6.0%和12.4%。对更多抗性转化植株的分子检测、GUS分析和赖氨酸含量测定正在进行之中。

CYCLIC PEPTIDE HEPATOTOXINS FROM FRESH-WATER CYANOBACTERIAL (BLUE-GREEN-ALGAE) WATERBLOOMS COLLECTED IN CENTRAL CHINA

Toxic cyanobacteria (blue-green algae) waterblooms have been found in several Chinese water bodies since studies began there in 1984. Waterbloom samples for this study contained Anabaena circinalis, Microcystis aeruginosa and Oscillatoria sp. Only those waterblooms dominated by Microcystis aeruginosa were toxic by the intraperitoneal (i.p.) mouse bioassay. Signs of poisoning were the same as with known hepatotoxic cyclic peptide microcystins. One toxic fraction was isolated from each Microcystis aeruginosa sample. Two hepatotoxic peptides were purified from each of the fractions by high-performance liquid chromatography and identified by amino acid analysis followed by low and high resolution fast-atom bombardment mass spectrometry (FAB-MS). LD50 i.p. mouse values for the two toxins were 245-mu-g/kg (Toxin A) and 53-mu-g/g (Toxin B). Toxin content in the cells was 0.03 to 3.95 mg/g (Toxin A) and 0.18 to 3.33 mg/kg (Toxin B). The amino acid composition of Toxin A was alanine [1], arginine [2], glutamic acid [1] and beta-methylaspartic acid [1]; for Toxin B it was the same, except one of the arginines was replaced with a leucine. Low- and high-resolution FAB-MS showed that the molecular weights were 1,037 m/z (Toxin A) and 994 m/z (Toxin B), with formulas of C49H76O12N13 (Toxin A) and C49H75O12N10 (Toxin B). It was concluded that Toxin A is microcystin-RR and Toxin B is microcystin-LR, both known cyclic heptapeptide hepatotoxins isolated from cyanobacteria in other parts of the world. Sodium borohydride reduction of microcystin-RR yielded dihydro-microcystin-RR (m/z = 1,039), an important intermediate in the preparation of tritium-labeled toxin for metabolism and fate studies.

Growth-Parameter Spaces and Optical Properties of Cubic Boron Nitride Films on Si(001)

Cubic boron nitride (c-BN) films were deposited on Si(001) substrates in an ion beam assisted deposition (IBAD) system under various conditions, and the growth parameter spaces and optical properties of c-BN films have been investigated systematically. The results indicate that suitable ion bombardment is necessary for the growth of c-BN films, and a well defined parameter space can be established by using the P/a-parameter. The refractive index of BN films keeps a constant of 1.8 for the c-BN content lower than 50%, while for c-BN films with higher cubic phase the refractive index increases with the c-BN content from 1.8 at chi(c) = 50% to 2.1 at chi(c) = 90%. Furthermore, the relationship between n and rho for BN films can be described by the Anderson-Schreiber equation, and the overlap field parameter gamma is determined to be 2.05.

Effects of crystalline quality on the phase stability of cubic boron nitride thin films under medium-energy ion irradiation

To investigate the effect of radiation damage on the stability and the compressive stress of cubic boron nitride (c-BN) thin films, c-BN films with various crystalline qualities prepared by dual beam ion assisted deposition were irradiated at room temperature with 300 keV Ar+ ions over a large fluence range up to 2 x 10(16) cm(-2). Fourier transform infrared spectroscopy (FTIR) data were taken before and after each irradiation step. The results show that the c-BN films with high crystallinity are significantly more resistant against medium-energy bombardment than those of lower crystalline quality. However, even for pure c-BN films without any sp(2)-bonded BN, there is a mechanism present, which causes the transformation from pure c-BN to h-BN or to an amorphous BN phase. Additional high resolution transmission electron microscopy (HRTEM) results support the conclusion from the FTIR data. For c-BN films with thickness smaller than the projected range of the bombarding Ar ions, complete stress relaxation was found for ion fluences approaching 4 x 10(15) cm(-2). This relaxation is accompanied, however, by a significant increase of the width of c-BN FTIR TO-line. This observation points to a build-up of disorder and/or a decreasing average grain size due to the bombardment. (c) 2005 Elsevier B.V. All rights reserved.

The microstructure of hydrogenated microcrystalline silicon thin films studied by small-angle x-ray scattering

The microstructures of hydrogenated microcrystalline silicon (tic-Si: H) thin films, prepared by plasma-enhanced chemical vapor deposition (PECVD), hot wire CVD(HWCVD) and plasma assisted HWCVD (PE-HWCVD), have been analyzed by the small angle x-ray scattering(SAXS) measurement. The SAXS data show that the microstructures of the μ c-Si: H films display different characteristics for different deposition techniques. For films deposited by PECVD, the volume fraction of micro-voids and mean size are smaller than those in HWCVD sample. Aided by suitable ion-bombardment, PE-HWCVD samples show a more compact structure than the HWCVD sample. The microstructure parameters of the μ c-Si: H thin films deposited by two-steps HWCVD and PE-HWCVD with Ar ions are evidently improved. The result of 45&DEG; tilting SAXS measurement indicates that the distribution of micro-voids in the film is anisotropic. The Fouriertransform infrared spectra confirm the SAXS data.