Enhanced hydrogen desorption from Si sites during low-temperature Si1-xGex growth by disilane and solid-Ge molecular beam epitaxy

A phenomenological model is proposed to explain quantitatively the interesting compositional dependence on the Ge incorporation rate during low-temperature growth of Si1-xGex by disilane and solid-Ge molecular beam epitaxy, based on enhanced hydrogen desorption from Si sites due to the presence of Ge atoms. The hydrogen desorption rate constant for disilane on Si sites is fitted to an exponential function of Ge incorporation rate and a possible physical explanation is discussed. Simulated results are in excellent agreement with experimental data. (C) 1999 American Institute of Physics. [S0021-8979(99)02109-X].

Temperature dependence of the Fermi level in low-temperature-grown GaAs

A variable-temperature reflectance difference spectroscopy study of GaAs grown by molecular beam epitaxy at low-temperature GaAs (LT-GaAs) shows that the Fermi level is mostly determined by the point defects in samples annealed at below 600 degrees C and can be shifted by photoquenching the defects. The Fermi level is otherwise almost temperature independent, leading to an estimated width of the defect band of 150 meV in the as-grown sample, For LT-GaAs annealed at 850 degrees C, the Fermi level is firmly pinned, most Likely by the As precipitates. (C) 1998 American Institute of Physics.

Twinning in Low-Temperature MOCVD Grown GaN on (001) GaAs Substrate

GaN buffer layers (thickness ～60nm) grown on GaAs(001) by low-temperature MOCVD are investigated by X-ray diffraction pole figure measurements using synchrotron radiation in order to understand the heteroepitaxial growth features of GaN on GaAs(001) substrates. In addition to the epitaxially aligned crystallites,their corresponding twins of the first and the second order are found in the X-ray diffraction pole figures. Moreover, { 111 } q scans with χ at 55° reveal the abnormal distribution of Bragg diffractions. The extra intensity maxima in the pole fig ures shows that the process of twinning plays a dominating role during the growth process. It is suggested that the polarity of { 111 } facets emerged on (001) surface will affect the growth-twin nucleation at the initial stages of GaN growth on GaAs(001) substrates. It is proposed that twinning is prone to occurring on { 111 } B, N-terminated facets.

Low-temperature relaxation of polymers around doped dyes studied by persistent spectral hole burning

Persistent spectral hole burning spectroscopy is applied to evaluate the low-temperature relaxation around the dye molecules doped in several types of polymers. The doped dye is tetraphenylporphine, and the measured polymers are vinyl polymers and main chain aromatic polymers. The changes of microscopic environments around the dye are evaluated from the changes in the hole profiles during temperature cycling experiments. The relaxation behavior of the polymers is discussed in relation to their chemical structures. (C) 1999 John Wiley & Sons, Inc.

Low-temperature molten salt synthesis and characterization of CoWO4 nano-particles

CoWO4 nano-particles were successfully synthesized at a low temperature of 270 degrees C by a molten salt method, and effects of such processing parameters as holding time and salt quantity on the crystallization and development Of CoWO4 crystallites were initially studied. The products were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM). and photoluminescent spectra techniques (PL), respectively. Experimental results showed that the well-crystallized CoWO4 nano-particles with ca. 45 nm in diameter could be obtained at 270 degrees C for a holding time of 8 h with 6:1 mass ratio of the salt to CoWO4 precursor, and XRD analysis evidenced that the as-prepared sample was a pure monoclinic phase Of CoWO4 with wolframite structure. Their PL spectra revealed that the CoWO4 nano-particles displayed a very strong PL peak at 453 nm with the excitation wavelength of 230 nm, and PL properties of CoWO4 crystallites relied on their crystalline state, especially on their particle size. (C) 2009 Elsevier B.V. All rights reserved.

Ice induced low temperature fatigue crack propagation in offshore structural steel A131

To investigate the low temperature fatigue crack propagation behavior of offshore structural steel A131 under random ice loading, three ice failure modes that are commonly present in the Bohai Gulf are simulated according to the vibration stress responses induced by real ice loading. The test data are processed by a universal software FCPUSL developed on the basis of the theory of fatigue crack propagation and statistics. The fundamental parameter controlling the fatigue crack propagation induced by random ice loading is determined to be the amplitude root mean square stress intensity factor K-arm. The test results are presented on the crack propagation diagram where the crack growth rate da/dN is described as the function of K-arm. It is evident that the ice failure modes have great influence on the fatigue crack propagation behavior of the steel in ice-induced vibration. However, some of the experimental phenomena and test results are hard to be physically explained at present. The work in this paper is an initial attempt to investigate the cause of collapse of offshore structures due to ice loading.

Low Temperature Properties of PI/SiO_2 Nanocomposite Films

In this paper, the mechanical properties of PI/Si_O, nanocomposite hybrid films with different silica doping levels are experimentally studied at low temperature. Experimental results show that the coefficient of thermal expansion (CTE) of the PI/Si_O, nanocomposite hybrid films gradually reduces when the ambiance temperature is decreased. At the liquid nitrogen temperature (77 K), the CTE value is about five times less than that at room temperature (287 K). The measured CTEs of hybrid films greatly decrease when doped with inorganic silica, especially when the silica doping level is more than 1 wt.%. However, too high silica contents (more than 10 wt.%) can cause problem to disperse effectively and the specimens become quite opaque. Experimental results also show that the effects of the pre-applied stress levels can be neglected on the CTE testing. When the ambient temperature changes from 287 to 77 K, the measured average values of the films' ultimate tensile strength (UTS) and Young's modulus increase about 60 and 90%, respectively, while the breaking elongation decreases about 42%.

Experimental investigation on low-temperature fatigue crack propagation in offshore structural steel A131 under random sea ice loading

An apparatus of low-temperature controlling for fatigue experiments and its crack measuring system were developed and used for offshore structural steel A131 under conditions of both low temperature and random sea ice. The experimental procedures and data processing were described, and a universal random data processing software for FCP under spectrum loading was written. Many specific features of random ice-induced FCP which differed with constant amplitude FCP behaviours were proposed and temperature effect on ice-induced FCP was pointed out with an easily neglected aspect in designing for platforms in sea ice emphasized. In the end, differences of FCP behaviours between sea ice and ocean wave were presented.

Low-temperature hydrothermal growth of oriented [0001] ZnO film

Well-aligned ZnO films have been successfully prepared by using low-temperature hydrothermal approach on (0001) sapphire substrates that were pre-coated with a ZnO nano-layer by dip-coating. The characterizations of scanning electron microscopy (SEM) and X-ray diffraction (XRD) indicate that the ZnO films consist of hexagonal rods that grow along the c axis based on the sapphire substrates. It is found that the size of ZnO rods can be adjusted by an aqueous solution with some methenamine. (c) 2006 Elsevier B.V. All rights reserved.

Homoepitaxial growth of ZnO films via low-temperature liquid-phase epitaxy

Homoepitaxial ZnO films have been grown via liquid-phase epitaxy (LPE) on (000 1) oriented ZnO substrates. X-ray rocking curve revealed the high quality of the ZnO films with a FWHM of 40 arc sec. Films of thickness about 20 gm were gown in the temperature range 700-720 degrees C. The growth rate of ZnO films was estimated to be 0.3 mu m h(-1). Atomic force microscope analysis showed that the surface roughness of ZnO films was very low, which further confirmed the high crystallinity of ZnO films. (c) 2006 Elsevier B.V. All rights reserved.

Low temperature growth of c-axis oriented AlN films on gamma-LiAlO2 by radio frequency magnetron sputtering

Aluminum nitride (AlN) films were prepared on gamma-LiAlO2 substrates by radio frequency (rf) magnetron sputtering. The influence of substrate temperature (T-s) and nitrogen (N-2) concentration on film growth was investigated. The X-ray diffraction (XRD) results reveal that highly c-axis oriented AlN films can be obtained in the temperature range from room temperature (RT) to 300 degrees C. A smoother surface and a crystalline quality decrease with increasing N-2 concentration have been observed by XRD and atomic force microscopy (AFM) for the films deposited at lower substrate temperature. On the contrary, the degradation of the surface smoothness and the higher crystalline quality can be observed for the films deposited at a higher substrate temperature with N-2-rich ambient. The growth mechanism which leads to different crystalline quality of the films is discussed. (C) 2008 Elsevier B.V. All rights reserved.