碱金属在[110]单轴应力下的理论强度

<正> 我们知道,晶须的强度远远大于大晶体的强度,很可能接近于理想晶体的理论强度.而晶须的轴线则通常平行于晶体的三个主要方向[100],[110]或[111]。因此当计算理想晶体在单轴应力下的理论强度时,也必须考虑不同的应力方向.七十年代,Milstein等人利用Morse势和Born稳定性判据计算了立方晶体分别在[100],[110]和[111]单轴应力下的理论强度.由于有心力近似受到Cauchy关系的限制,我们在文献

1.55-mu m InGaAs/InGaAlAs MQW vertical-cavity surface-emitting lasers with InGaAlAs/InP distributed Bragg reflectors

High-performance InGaAs/InGaAlAs multiple-quantum-well vertical-cavity surface-emitting lasers (VCSELs) with lnGaAlAs/InP distributed Bragg reflectors are proposed for operation at the wavelength of 1.55 mum. The lasers have good heat diffusion characteristic, large index contrast in DBRs, and weak temperature sensitivity. They could be fabricated either by metal-organic chemical vapor deposition (MOCVD) or by molecular beam epitaxy (MBE) growth. The laser light-current characteristics indicate that a suitable reflectivity of the DBR on the light output side in a laser makes its output power increase greatly and its lasing threshold current reduce significantly, and that a small VCSEL could output the power around its maximum for the output mirror at the reflectivity varying in a broader range than a large VCSEL does. (C) 2004 Elsevier Ltd. All rights reserved.

110-W fiber laser with homemade double-clad fiber

A high-power ytterbium-doped fiber laser (YDFL) with homemade double-clad fiber (DCF) is introduced in this letter. The geometric parameter and laser characteristics of the fiber have been studied. With one-end-pumping scheme, pumped by a high-power laser diode with launching power of 280 W, a maximum continuous wave (CW) output of 110 W is obtained with an optical-to-optical efficiency of 40%.

InP/InGaAsP双区共腔双稳态激光器放大特性及调制特性研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

InGaAs/InP系材料的MCVPE生长及特性研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

正面进光InGaAs/InP SAGM APD器件的研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

LEC-InP单晶的红外光谱研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

半绝缘InP注硅包退火的研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

应变异质结构(In(GaAs/InAlAs/InP)材料的分子束外延生长.性质及其相关器件的研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

InGaAsP/InP半导体光波导开关

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

等电子杂质Ga 、Sb对InP 中缺陷的影响

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

InP-氧化铝界面特性研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

光通信用1.55微米InGaAsP/InP DH激光器中的0.95微米发光和俄歇复合

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

1.3μm In1-x Gax Asx P1-y/InP 应变MQW激光器及偏振补偿的源介质的研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

金属有机气相外延InGaAsP/InP应变量子阱分布反馈激光器与光放大器集

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z