Al2O3衬底上生长ZnO薄膜的结构和光学特性

用脉冲激光沉积法在Al2O3（0001）衬底上沉积了ZnO薄膜。衬底温度分别为300℃、400℃、500℃、600℃和700℃。利用X射线衍射（XRD）和光致发光谱（PL）对薄膜的结构和光学性能进行研究。X射线衍射的结果表明在不同温度下生长的ZnO薄膜均具有高度c轴择优取向，衬底温度400℃时，膜的应力较小质量较高。ZnO薄膜有很强的紫外发光峰，紫外发光峰的强度与衬底温度密切相关，并发现当衬底温度从300℃增到400℃时，紫外发射峰出现6nm的蓝移。

Effects of annealing on laser-induced damage threshold of TiO2/SiO2 high reflectors

The mechanism of improving 1064 nm, 12 ns laser-induced damage threshold (LIDT) of TiO2/SiO2 high reflectors (HR) prepared by electronic beam evaporation from 5.1 to 13.1 J/cm(2) by thermal annealing is discussed. Through optical properties, structure and chemical composition analysis, it is found that the reduced atomic non-stoichiometric defects are the main reason of absorption decrease and LIDT rise after annealing. A remarkable increase of LIDT is found at 300 degrees C annealing. The refractive index and film inhomogeneity rise, physical thickness decrease, and film stress changes from compress stress to tensile stress due to the structure change during annealing. (c) 2007 Elsevier B.V. All rights reserved.

云南高黎贡山白颌大角蟾的核型、C-带及Ag-NORs的研究

比较了云南高黎贡山地区的贡山独龙江和腾冲大蒿坪白颌大角蟾（Megophryslateralis）两个地理种群的核型、C-带和Ag-NORs结果表明，两个地理种群在核型和带型上都有差异两个地理种群的核型均为2n＝26，NF＝52染色体形态差异不明显，而次缢痕的位置完全不同，贡山独龙江标本的次缢痕位于No．2的长臂上近着丝点处，腾冲标本的次缢痕位于No．5的短臂上近着丝点的部位在腾冲标本中发现一雄性个体中有一条额外的染色体，可能是B染色体两地标本的C-带差异不太显著，贡山独龙江标本的C-带相对较为显著．贡山独龙江标本的Ag-NORs位于No．2长臂近着丝点处，与次缢痕的部位对应，两条同源染色体上大小有显著差异．腾冲标本的Ag-NORs位于No．5短臂上近着丝点处，与次缢痕的部位对应依据核型和带型的比较，对白颌大角蟾的分类和进化问题进行了讨论。

银额果蝇的B染色体研究 1: 昆明群体的Bs数目和频率

银额果蝇昆明群体有丝分裂中期核型中存在B染色体, 出现频率为69.1%在已 研究过的来自各个地区的银额果蝇中, 昆明群体的B染色体频率最高。B染色体 数目为1—6条。该群体内单雌系间的B染色体数目不同, 个体间和细胞间的B染色 体数目也不同。在核型中, B染色体最小, 形态稳定, 点状, C-带和G-带呈阳性 。 图版1图2表1参12

基于细胞色素b基因序列的鲤科鱼类系统发育研究(鱼纲:鲤形目)

鲤科是鱼类最大的科,在中国淡水鱼类组成中鲤科鱼类的成分占一半以上.鲤科鱼类的演化过程代表了东亚淡水鱼类的整体演化过程.为探讨东亚鲤科鱼类系统发育关系,共分析了包括18种新测序列在内的54种鲤科鱼类细胞色素b基因的全序列.分析的物种涵盖了鲤科鱼类的12个亚科并对问题较多的(鱼丹)亚科(Danioninae)和雅罗鱼亚科(Leuciscinae)进行了广泛的采样.系统发育树的建立使用了多种方法,包括邻接法、最大简约法和最大似然法.亚口鱼科(Catostomidae)的胭脂鱼(Myxocyprinus asia

Promoting strain relaxation of Si0.72Ge0.28 film on Si (100) substrate by inserting a low-temperature Ge islands layer in UHVCVD

A flat, fully strain-relaxed Si0.72Ge0.28 thin film was grown on Si (1 0 0) substrate with a combination of thin low-temperature (LT) Ge and LT-Si0.72Ge0.28 buffer layers by ultrahigh vacuum chemical vapor deposition. The strain relaxation ratio in the Si0.72Ge0.28 film was enhanced up to 99% with the assistance of three-dimensional Ge islands and point defects introduced in the layers, which furthermore facilitated an ultra-low threading dislocation density of 5 x 10(4) cm (2) for the top SiGe film. More interestingly, no cross-hatch pattern was observed on the SiGe surface and the surface root-mean-square roughness was less than 2 nm. The temperature for the growth of LT-Ge layer was optimized to be 300 degrees C. (C) 2008 Elsevier B.V. All rights reserved.

InAs/GaSb superlattices for photodetection in short wavelength infrared range

The first report of a short wavelength infrared detector based on type II InAs/GaSb superlattices is presented. Very short period superlattices containing InAs (2ML)/GaSb (8ML) superlattices (SLs) were grown by molecular-beam epitaxy on GaSb substrates. The photoluminescence showed a cut-off wavelength at 2.1 mu m at 10 K and 2.6 mu m at 300 K. Room-temperature optical transmittance spectra shows obvious absorption in InAs (2ML)/GaSb (8ML) SL in the range of 450-680 meV, i.e. 1.8-2.7 mu m. The cut-off wavelength moved from 2.3 mu m to 2.6 mu m with temperature rising from 77 K to 300 K in photoresponse spectra. The blackbody response R-v exponentially decreased as a function of 1/T in two temperature sections (130-200 K and 230-300 K). The blackbody detectivity D-bb(center dot) was beyond 1 x 10(8) cmHz(1/2)/W at room temperature. (C) 2009 Elsevier B.V. All rights reserved.

InAs self-assembled quantum dots grown on an InP (311)B substrate by molecular beam epitaxy

Self-assembled InAs quantum dots (QDs) have been grown by solid-source molecular beam epitaxy on a (311)B InP substrate. Transmission electron microscopy clearly shows that a high density of smaller InAs islands can be obtained by using such a high index substrate. After introducing a lattice-matched underlying In0.52Al0.24Ga0.24As layer, the InAs QDs are much more uniform in size and form two-dimensional well ordered arrays. The photoluminescence (PL) spectra also confirm that the InAs QDs grown on underlying In0.52Al0.24Ga0.24As have a better quality than those grown in the In0.52Al0.48As matrix. A simple calculation indicates that the redshift of the PL peak energy mainly results from InAs QDs on underlying In0.52Al0.24Ga0.24As of large size. (C) 2001 American Institute of Physics.

Two-dimensional ordering of self-assembled InAs quantum dots grown on (311)B InP substrate

Self-assembled InAs quantum dots (QDs) in InAlAs grown on (001) and (311)B InP substrates by molecular beam epitaxy (MBE) have been comparatively investigated. A correlated study of atomic force microscopy (AFM) and photoluminescence (PL) disclosed that InAs QDs grown on high-index InP substrates can lead to high density and uniformity. By introducing a lattice-matched InAlGaAs overlayer on InAlAs buffer, still more dense and uniform InAs QDs were obtained in comparison with InAs QDs formed with only InAlAs matrix. Moreover, two-dimensional well-ordered InAs dots with regular shape grown on (311)B InP substrates are reported for the first time. We explained this exceptional phenomenon from strain energy combined with kinetics point of view. (C) 2000 Elsevier Science B.V. All rights reserved.

Anomalous temperature dependence of photoluminescence from InAs quantum dots

Self-assembled InAs quantum dots are fabricated on a GaAs substrate by molecular beam epitaxy. The dots are covered by several monolayers of In0.2Ga0.8As before a GaAs cap layer and an in situ postgrowth annealing is performed to tune the emission to higher energy. The temperature dependence of photoluminescence from this structure demonstrates a slower redshift rate of the peak position, a gradual broadening of the linewidth and an abnormal enhancement of integrated intensity as the temperature is increased from 15 to 300 K. These phenomena are closely related to the introduction of an InGaAs layer and to the intermixing of In and Ga atoms during annealing. We propose a model to explain the unusual increase in PL intensity, which fits the experimental data well. (C) 2000 American Institute of Physics. [S0021-8979(00)04618-1].

The effects of carbonized buffer layer on the growth of SiC on Si

Carbonized buffer layers were formed with C2H4 on Si(100) and Si(111) substrates using different methods and SIC epilayers were grown on each buffer layer at 1050 degrees C with simultaneous supply of C2H4 and Si2H6. The structure of carbonized and epitaxy layers was analyzed with in situ RHEED. The buffer layers formed at 800 degrees C were polycrystalline on both Si(100) and Si(111) substrates whereas they were single crystals, with twins on Si(100) and without tu ins on Si(111)substrates. when formed with a gradual rise in substrate temperature from 300 degrees C to growth temperature. Raising the substrate temperature slowly results in the formation of more twins. Epilayers grown on carbonized polycrystalline lavers are polycrystalline. Single crystal epilayers without twins grow on single crystalline buffer layers without twins or with a few twins. (C) 1999 Elsevier Science B.V. All rights reserved.

The effects of carbonized buffer layer on the growth of SiC on Si

Carbonized buffer layers were formed with C2H4 on Si(100) and Si(111) substrates using different methods and SIC epilayers were grown on each buffer layer at 1050 degrees C with simultaneous supply of C2H4 and Si2H6. The structure of carbonized and epitaxy layers was analyzed with in situ RHEED. The buffer layers formed at 800 degrees C were polycrystalline on both Si(100) and Si(111) substrates whereas they were single crystals, with twins on Si(100) and without tu ins on Si(111)substrates. when formed with a gradual rise in substrate temperature from 300 degrees C to growth temperature. Raising the substrate temperature slowly results in the formation of more twins. Epilayers grown on carbonized polycrystalline lavers are polycrystalline. Single crystal epilayers without twins grow on single crystalline buffer layers without twins or with a few twins. (C) 1999 Elsevier Science B.V. All rights reserved.

OLAND���物脱氮系统运行条件及其微生物群落结构的研究

OLAND���阶段生物脱氮系统是一项正在开发且极具应用前景的处理高氨氮、低COD废水的新技术。在实验室水平，对OLAND���统限氧亚硝化阶段MBR反应器和厌氧氨氧化阶段SBR反应器的启动和运行进行了系统研究。MBR反应器控制参数在DO0.1-0.3mg/L，pH7.8±0.1，温度30±0.5℃，SRT无穷大的条件下，可实现在较高的容积负荷By＝IO00mgN／L，水力停留时间HRT：ld下稳定的亚硝酸型硝化，使NH4+-N和NO2-N的出水比例达到理想的比值（1:1.20±0.20），保证厌氧氨氧化阶段SBR反应器的理想进水；SBR反应器在完全厌氧、pH7.8-8.2，温度30±0．5℃，SRT无穷大的条件下，无需外加任何有机碳源，在较高总氮负荷550mgN／L下，可实现NH4+-N和NO2--N同时稳定的去除，二者的消耗比例为1:（1.21±0.05），总氮去除率高达92％。采用巢式PCR、DGGE、 FISH等分子技术对MBR反应器硝化菌群随溶解氧的动态变化规律和SBR反应器厌氧氨氧化菌群结构、组成进行了研究，并探讨了硝化菌群与氮素组成变化之间的内在联系。结果表明：在限氧亚硝化阶段硝化菌群中氨氧化菌受溶解氧浓度的影响较大，其种群结构从反应器启动初期到稳定后期发生了非常明显的变化。亚硝酸氧化菌NOB的种群组成受溶氧影响并不明显，从启动初期到稳定后期其种群结构无明显变化。硝化菌群中氨氧化菌 AOB与亚硝酸氧化菌NOB的数量比例关系随溶解氧的降低而不断升高，从最初的3.6:1升高到稳定后期的5.5:1。MBR反应器优势硝化菌群主要由A、B、C三类氨氧化菌和硝化杆菌D、硝化螺菌F组成，其中优势菌C为维持MBR反应器稳定出水比例的主要功能菌。硝化菌群组成和结构的变化，带来了不同N素之间组成和比例的规律性变化。厌氧氨氧化阶段基本由厌氧氨氧化菌AnAOB和ANAMMOX两类菌组成，二者空间结构紧密，在反应器中的活菌数量比例分别为55％和42％。厌氧氨氧化菌AnAOB种群多样性相对比较丰富，主要由条带I和H所代表的两种优势菌组成；ANAMMOX菌种群多样性变化较小，其种群主要由优势菌K和J组成。对MBR和SBR反应器中的优势菌进行了克隆、测序和系统发育学分析，结果表明：限氧亚硝化阶段MBR反应器启动初期的优势菌A属于Nitrosomonadaceae科，是否是一个新属，还有待于进一步鉴定。运行中期优势菌B与Nitroso）nonaseurooaea亲缘关系最近，同源性高达99.1％，暂命名为Nilrosomonas sp.BI。稳定后期优势菌C与Nitrosomonas eutroPha亲缘关系最近，同源性为96.3％，暂命名为Nifrosomonas sp．cl。硝化杆菌属优势菌D与Nitrobacter alkalicus、Nitrobacter hambllrgensts和Nitlobac招rwinograsky 亲缘关系较近，同源性分别为95.5-97％、96.5～97％和95.8～96.8％。SBR反应器中AnAOB优势菌I与MBR反应器优势菌B亲缘关系最近，同源性高达98.7％，与Nitlosomonas euroPaea同源性为98.3％。根据序列比较和生理特性分析，优势菌I与优势菌B应为Nitrosomonas属两个不同的种，暂将优势菌I命名为Nitrosomonas sp．II。优势菌H与MBR反应器优势菌C亲缘关系最近，同源性达97.9％，与Nitrosomonas eutropha同源性为96.3％。结合其生理特性分析，二者应为Nitrosomonas属两个不同的种，暂将优势菌H命名为Nitrosomollas sp．Hl。ANAMMox优势菌K与未培养的 Planctomycete和已鉴定的另一种ANAMMoX菌尤uenenia sf况ttgartiensis亲缘关系较近，同源性分别为99.8％和96.6％。优势菌J与Gen bank收录的所有菌的相似性均低于76％，说明该菌是OLAND���统厌氧氨氧化阶段比较独特的菌，是迄今为止在厌氧反应过程中未发现的一个新菌。

吲哚生物碱Desbromoarborescidine A 的全合成及烯胺C-亚磺酰化反应研究

从新几内亚核桃木的树皮中分离得到的吲哚类喹诺里西定生物碱10-Desbromoarborescidine A，因发现其具有阻滞钙离子通道的活性而倍受关注。10-Desbromoarborescidine A由A、B、C、D四个环组成，只有一个手性中心，是吲哚生物碱中结构较简单的一种，常作为此类生物碱全合成方法的模型化合物。但迄今为止，能高效而简便的实现手性10-Desbromoarborescidine A不对称全合成方法线路不多，大多数以不对称诱导的方式建立其手性中心，手性催化的方式仅有一例金属催化。从逆合成分析可知，Desbromoarborescidine A的全合成可以通过亚胺不对称催化还原进行关键的手性中心构建，而本课题组在之前的研究中通过手性有机小分子催化剂的发展，已将三氯硅烷氢转移还原亚胺发展成了一类简便实用、高效、高对映选择性并具有优良底物适应范围的不对称催化反应，我们希望以这一反应作为关键手段，发展一条Desbromoarborescidine A及其类似物不对称合成新路线。 根据我们设计的新路线，首先成功合成了其关键中间体，然后我们进行了关键的不对称催化尝试。用本实验室已有的高性能有机小分子催化剂虽得到了较好的对应选择性，但是产率很低。同时，为了验证整条线路的可行性，我们也用消旋的中间体进行拉通线路的尝试。但不幸的是，在脱除保护基时遇到了很大困难。尝试换不同的保护基，或改变脱保护基的顺序，都未能成功合成目标产物。究其原因可能是由于吲哚的特殊性造成的，吲哚类亚胺与常规的芳香亚胺有较大的差异，其NH基团无论保护还是不保护，对与其2位相联接的C=N双键均有很大的影响，导致其不对称催化还原难以进行。另外，由于所设计的还原产物含有处在吲哚苄位的胺基，稳定性较差，造成保护基脱除困难。 烯胺C-亚磺酰化反应是本课题组最近发现的一个新反应，之前未见文献报道。本研究对该反应进行了反应条件优化和底物扩展，发现带Cbz，Ac，COt-Bu，CO2Et，Bz等保护基的一系列环状和非环状烯胺在亚磺酸钠、DMAc和MeSiCl3的共同作用下能高效高产率生成β-胺基烯基亚砜类新化合物，为合成多官能团化的烯基亚砜新化合物提供了一条简便实用的途径。 The main constituent of Dracontomelum mangiferum B1, indoloquinolizidine alkaloid 10-Desbromoarborescidine A, has drawn great attention due to its calcium channel blocking activity. Its molecular structure is relatively simple compared with the other alkaloids of the same type, which has only one chiral center, albeit with four cycles A, B, C, and D. This compound is often used as a model target for exploring different strategies for the total synthesis of indole alkaloids. Nevertheless, so far there still lack practical and highly efficient methods for the asymmetric total synthesis of 10-Desbromoarborescidine A. Most of the current available methods rely on stoichiometric asymmetric synthesis for the construction of the chiral center. There is only one example reporting utilization of asymmetric catalysis, but with transition metal complex as the catalyst. Our retrosynthetic analysis shows that catalytic asymmetric reduction of imine could be used as the key step for the construction of the chiral center of Desbromoarborescidine A. Since in the previous studies our group has developed the asymmetric reduction of imines by trichlorosilane into a practical and highly efficient and enantioselective method using newly designed chiral organocatalysts, we hope to apply this method to develop a novel synthetic route for the total synthesis of Desbromoarborescidine A and its analogues in this study. According to the newly designed synthetic route, we first accomplished the synthesis of the key intermediates which was then examined for the critical asymmetric catalysis. The asymmetric reduction using the highly efficient organocatalysts, developed in our lab afforded high ee but poor yield. We tried different reaction conditions to improve the yield, but failed to get any good results. Simultaneously, to vertify the feasibility of the synthetic route we designed, we also tired to go through the route toward the racemic synthesis of Desbromoarborescidine A. But unfortunately, protection and deprotection proved to be big hurdles. All the different protection groups and different sequences of protection and deprotection we tried failed to get us through the designed synthetic sequence and furnish the final product. Most likely, the indole part is the culprit behind the failures.The NH group of the indole, no matter protected or not, may impact the catalytic asymmetric reduction of C-N double bond connected with 2-C. Additionally, the reduction product we designed contains an amino group in the β-position of the indole, which may cause problems due to its instability. C-sulfenylation of enamines is a novel reaction discovered recently by our group, which has not been seen before in the literature. In this study, optimization of the reaction conditions and exploration of the substrate scope were further undertaken for this reaction, which reveal that a series of enamines with N-Cbz, Ac, COt-Bu, CO2Et protection groups could all undergo smooth C-sulfinylations with the comined use of sodium benzene sulphinate, DAMc and MeSiCl3, efficiently furnishing the β-amino vinylsulfoxide products in high yield, affording a practical and highly efficient methods for synthesis of functional vinylsulfoxides.

青藏高原东缘几种树苗对增强紫外线-B和氮供应的响应

大气臭氧的损耗导致了地球表面具有生物学效应的紫外线-B(UV-B)辐射增强。同时，大气成分变化中除了UV-B辐射增强外，氮沉降是一个新近出现而又令人担忧的环境问题，其来源和分布正在迅速扩展到全球范围，并不断向陆地和水生生态系统沉降。本试验在四川省境内的中国科学院茂县生态站内进行，以云山、冷杉、色木槭和红椋子幼苗为模式植物，从生长形态、光合作用、抗氧化能力和矿质营养等方面研究了青藏高原东缘4种树苗对全球变化－增强UV-B辐射和氮供应(氮沉降)的响应。该试验为室外盆栽试验，包括四个处理：(1)大气UV-B辐射+无额外的氮供应(C)；(2)大气UV-B辐射+额外的氮供应(N)；(3)增强UV-B辐射+无额外的氮供应(UV-B)；(4)增强UV-B辐射+额外的氮供应(UV-B+N)。其目的：一方面有助于丰富我国对全球变化及区域响应研究的全面认识，进一步完善在全球气候变化条件下臭氧层削减和氮沉降对陆地生态系统影响的内容；另一方面，在一定程度上有助于我们更好的理解在全球变化下森林更新的早期过程。具体结果如下： 增强的UV-B辐射在生长形态、光合、抗氧化能力、活性氧和矿质营养方面对4种幼苗都有显著的影响。UV-B辐射增强对幼苗的影响不仅与物种有关，而且，还与氮营养水平相关。总体表现为，高的UV-B辐射导致了色木槭和红椋子幼苗叶片的皱缩和卷曲，并降低了色木槭幼苗的叶片数和叶重，在额外的氮供应下，云杉、冷杉和红椋子的叶重也显著地降低了；色木槭和红椋子幼苗叶片的解剖结构受到了增强的UV-B辐射的影响，增强的UV-B辐射显著地降低了色木槭叶片的栅栏组织厚度，提高了红椋子叶片的厚度；增强的UV-B辐射显著地降低了4种幼苗的单株总生物量、植物地下部分的生长、总叶绿素含量 [Chl (a + b)]、净光合速率和最大量子产量(Fv/Fm)，提高了4种幼苗叶片的膜脂过氧化(MDA含量)，改变了植物体不同器官中的矿质元素含量；增强的UV-B辐射提高了冷杉、色木槭和红椋子叶片中的过氧化氢含量(H2O2)、超氧负离子(O2-)生成速率，在额外的氮供应下，云杉叶片中的活性氧含量也显著地提高了；在无额外的氮供应条件下，增强的UV-B辐射显著地提高了4种幼苗叶片中的UV-B吸收物质、脯氨酸含量和抗氧化酶的活性(SOD、POD、CAT、GR和APX)。在额外的氮供应条件下，UV-B辐射的增强却显著地降低了冷杉叶片中脯氨酸含量和红椋子叶片中UV-B吸收物质含量，但是，在4种幼苗叶片中，5种抗氧化酶的活性对UV-B辐射的增强没有明显的规律性，增强的UV-B辐射显著地提高了云杉叶片中的POD、SOD和GR的活性，提高了冷杉叶片中的POD和GR活性，提高了色木槭叶片中的POD、SOD和CAT活性和红椋子幼苗叶片中的POD和SOD活性。从这些结果可知，植物在遭受高的UV-B辐射导致的过氧化胁迫时，植物体内形成了一定的保护机制，但是，这种保护不能抵抗高的UV-B辐射对植物的伤害。 额外的氮供应在生长形态、光合、抗氧化能力、活性氧和矿质营养方面对4种幼苗都有一定的影响，不同幼苗对额外的氮供应响应不同，并且受到UV-B辐射水平的影响。在当地现有的UV-B辐射水平下，额外的氮供应显著地提高了幼苗的单株总生物量、植物地下部分的生长、Chl (a + b)、净光合速率(红椋子除外)、UV-B吸收物质(冷杉除外)、脯氨酸含量(红椋子除外)和部分抗氧化酶的活性，降低了H2O2的含量、O2-的生成速率和MDA含量(红椋子除外)，改变了植物体内部分矿质元素含量，显著地提高了云杉和冷杉叶片中的Fv/Fm。这些指标总体表明，在当地现有大气UV-B辐射水平下，额外的氮供应对植物的生长和发育是有利的。在增强的UV-B辐射水平下，4种幼苗的生长形态和光合大部分指标都没有受到额外氮供应的影响，额外的氮供应提高了红椋子幼苗的单株总生物量和Chl (a + b)含量，提高了冷杉和色木槭叶片中的活性氧含量和MDA含量，却降低了红椋子叶片中的活性氧含量；额外的氮供应也提高了云杉、色木槭和红椋子叶片中UV-B吸收物质和脯氨酸含量，降低了冷杉叶片中UV-B吸收物质和脯氨酸含量；在抗氧化酶活性方面，额外的氮供应降低了云杉、冷杉叶片中5种抗氧化酶的活性和红椋子叶片中POD和GR的活性，提高了色木槭叶片中的POD和SOD的活性；4种幼苗植物体内的矿质元素含量对额外的氮供应没有显著的规律性。从这些结果可知，在高的UV-B辐射下，额外的氮供应提高了云杉、冷杉和色木槭幼苗对高的UV-B辐射的敏感性，然而，额外的氮供应却促进了红椋子幼苗的生长，原因可能是，在高的UV-B辐射下，额外的氮供应增加了红椋子叶片的厚度、叶重和叶片数，降低了叶片中活性氧含量的结果。表明在高的UV-B辐射水平下，额外的氮供应降低了红椋子幼苗对高的UV-B辐射的敏感性。 在全球变化的趋势下，UV-B辐射增强和氮沉降可能同时存在，我们的研究表明，与大气UV-B辐射+无额外的氮供应处理相比，增强UV-B辐射+额外的氮供应处理显著地降低了幼苗的单株总生物量(红椋子除外)、Chl (a + b)、净光合速率、Fv/Fm(冷杉除外)和MDA含量(红椋子除外)，提高了活性氧含量 (云杉除外)、UV-B紫外吸收物质含量(冷杉除外)、脯氨酸含量和部分抗氧化酶的活性，改变了植物体不同器官中的矿质元素含量。结果表明，在当地现有条件下，全球变化(UV-B辐射增强和氮沉降)对云杉、冷杉和色木槭幼苗的生长是不利，尽管植物体内一些抗氧化性指标提高了，然而，却对红椋子幼苗的单株总生物量的累积没有显著的影响。 The depletion of the ozone led to the increase of ultraviolet-B (UV-B) with biological effects in the earth’s surface. At the same time, except for enhanced UV-B radiation, nitrogen deposition was an anxious environmental problem at present, rapidly expanding to the global scope and continuously depositing to land and aquatic ecosystem. The experiment was conducted in Maoxian Ecological Station of Chinese Academy of Sciences, Sichuan province, China. Picea asperata, Abies faxoniana, Acer mono Maxim and Swida hemsleyi (Schneid. et Wanger.) Sojak seedlings were selected as model plants to assess the effects of enhanced UV-B radiation and supplemental nitrogen supply on growth, morphological, photosynthesis, antioxidant and mineral nutrient traits of 4 species seedlings in east Qinghai-Tibetan Plateau. The experiment was potted outdoor, including 4 treatments: (1) ambient UV-B without supplemental nitrogen (control, C); (2) ambient UV-B with supplemental nitrogen (N); (3) enhanced UV-B without supplemental nitrogen (UV-B); (4) enhanced UV-B with supplemental nitrogen (UV-B+N). One hand, it was helpful for enriching our country to comprehensive understanding of the researches in the global change and the region response, further perfecting the effects of the depleted ozone layer and nitrogen deposition on land ecosystem under the global change; the other hand, it was favorable for us to better understanding of the early process of forest renews under the global change. The results were as follows: Enhanced UV-B radiation had significant effects on 4 species seedlings in growth, morphological, photosynthesis, antioxidant and mineral nutrient traits of 4 species seedlings. The effects of enhanced UV-B on plants were not only related with species, but also related with nitrogen nutrient level. Generally, the increase of UV-B radiation led to the shrinkage and curl of leaves in Acer mono Maxim and Swida hemsleyi (Schneid. et Wanger.) Sojak seedlings, and reduced the number of leaf and leaf weight of Acer mono Maxim seedlings, under supplemental nitrogen supply, leaf weight of Picea asperata, Abies faxoniana and Swida hemsleyi (Schneid. et Wanger.) Sojak seedlings significantly also reduced; the anatomical features of leaf in Acer mono Maxim and Swida hemsleyi (Schneid. et Wanger.) Sojak seedlings affected by enhanced UV-B radiation, the increase of UV-B radiation markedly reduced the palisade tissue thickness of Acer mono Maxim leaf and enhanced the leaf thickness of Swida hemsleyi (Schneid. et Wanger.) Sojak seedlings; the enhanced UV-B radiation significantly reduced total biomass per plant of 4 species seedlings, the growth of the underground parts, Chl (a + b), net photosynthetic rate and maximum potential quantum yield of photosynthesis (Fv/Fm), and increased the degree of lipid peroxidation (MDA content) and changed the content of mineral elements in different parts of plants; the enhanced UV-B radiation also increased the rate of superoxide radical (O2-) production and hydrogen peroxide (H2O2) content in leaves of Abies faxoniana, Acer mono Maxim, Swida hemsleyi (Schneid. et Wanger.) Sojak seedlings, under supplemental nitrogen supply, the reactive oxygen species in leaves of Picea asperata seedlings also significantly increased by enhanced UV-B radiation; under without supplemental nitrogen supply, enhanced UV-B radiation evidently induced an increase in UV-B absorbing compounds, proline content and the activities of antioxidant enzymes (SOD, POD, CAT, GR and APX) of leaves in 4 species seedlings. Under supplemental nitrogen supply, enhanced UV-B radiation induced a decrease in proline content of leaves in Abies faxoniana seedlings and UV-B absorbing compounds of leaves in Swida hemsleyi (Schneid. et Wanger.) Sojak seedlings, but, there were no obvious rules in the activities of five antioxidant enzymes of 4 species seedling leaves to enhanced UV-B radiation, enhanced UV-B radiation significantly increased the activities of POD, SOD and GR in Picea asperata leaves, the activities of POD and GR in Abies faxoniana leaves and the activities of POD, SOD and CAT in Acer mono Maxim leaves. The results indicated that some protective mechanism was formed when plants were exposed to enhanced UV-B radiation, but the protection could not counteract the harm of high UV-B radiation on plants. Supplemental nitrogen supply had some effects on 4 species seedlings in growth, morphological, photosynthesis, antioxidant and mineral nutrient traits. The response of 4 species seedlings was different to supplemental nitrogen supply, and was affected by UV-B levels. Under local ambient UV-B radiation, supplemental nitrogen supply significantly increased the total biomass per plant, the growth of underground parts, Chl (a + b), net photosynthetic rate (except for Acer mono Maxim seedlings), UV-B absorbing compounds (except for Abies faxoniana seedlings), proline content (except for Swida hemsleyi (Schneid. et Wanger.) Sojak seedlings) and the activities of some antioxidant enzymes, and reduced H2O2 content, the rate of O2- production and MDA content (except for Swida hemsleyi (Schneid. et Wanger.) Sojak seedlings) and changed the content of mineral elemental in different parts; supplemental nitrogen supply also evidently increased Fv/Fm in Picea asperata and Abies faxoniana seedlings. These results indicated that supplemental nitrogen supply was favorable for the growth of plants under local ambient UV-B radiation. Under enhanced UV-B radiation, mostly parameters in growth and morphology of 4 species seedlings were not affected by supplemental nitrogen supply. Supplemental nitrogen supply increased the total biomass per plant and Chl (a + b) of Swida hemsleyi (Schneid. et Wanger.) Sojak seedling, increased the reactive oxygen species and MDA content in Abies faxoniana and Acer mono Maxim leaves, and reduced the reactive oxygen species in Swida hemsleyi (Schneid. et Wanger.) Sojak leaves; supplemental nitrogen supply also increased UV-B absorbing compounds and proline content in Picea asperata, Acer mono Maxim and Swida hemsleyi (Schneid. et Wanger.) Sojak leaves, decreased UV-B absorbing compounds and proline content in Abies faxoniana leaves; in the activities of antioxidant enzymes, supplemental nitrogen supply significantly reduced the activities of antioxidant enzymes in Picea asperata and Abies faxoniana leaves and the activities of POD and GR in Swida hemsleyi (Schneid. et Wanger.) Sojak leaves, and increased the activities of POD and SOD in Acer mono Maxim leaves; the content of mineral elements in 4 species seedlings was no significantly rule to supplemental nitrogen supply. We knew from the results, under enhanced UV-B radiation, supplemental nitrogen supply made Picea asperata, Acer faxoniana and Acer mono Maxim seedlings more sensitivity to enhanced UV-B radiation, however, accelerated the growth of Swida hemsleyi (Schneid. et Wanger.) Sojak seedlings. The reason was probably that supplemental nitrogen supply increased the leaf thickness, leaf weight and leaf number, reduced the reactive oxygen content of leaf in Swida hemsleyi (Schneid. et Wanger.) Sojak seedlings grown under high UV-B radiation. This showed that supplemental nitrogen supply reduced the sensitivity of Swida hemsleyi (Schneid. et Wanger.) Sojak seedlings to high UV-B radiation. Under the tendency of the global change, enhanced UV-B radiation and nitrogen deposition may probably coexist. The results showed, compared with the treatment of ambient UV-B radiation without supplemental nitrogen supply, the treatment of enhanced UV-B radiation with supplemental nitrogen supply significantly reduced the total biomass per plants (except for Swida hemsleyi (Schneid. et Wanger.) Sojak seedlings), Chl (a + b), net photosynthetic rate, Fv/Fm and MDA content (except for Swida hemsleyi (Schneid. et Wanger.) Sojak seedlings), and increased reactive oxygen content (except for Picea asperata seedlings), UV-B absorbing compounds (except for Abies faxoniana seedlings), proline content and part antioxidant enzymes, and changed the content of mineral elements of different parts. The results indicated that the global change (enhanced UV-B and nitrogen deposition) were not favorable for the growth of plants under local ambient UV-B radiation and nitrogen nutrient level,, though increased some antioxidant indexes, however, the treatment of enhanced UV-B with supplement nitrogen supply did not significantly affect on the biomass accumulation of Swida hemsleyi (Schneid. et Wanger.) Sojak seedlings.