Characterization of strain relaxation in As ion implanted Si1-xGex epilayers grown by gas source molecular beam epitaxy

Strain relaxation in the As ion implanted Si0.57Ge0.43 epilayers was studied by double-crystal x-ray diffractometry and transmission electron microscopy, and was compared to that in the nonimplanted Si0.57Ge0.43 epilayers. Experimental results show that after rapid thermal annealing (RTA) the x-ray linewidth of the As+-implanted Si0.57Ge0.43 epilayers is narrower than that of the nonimplanted epilayers, and than that of the partially relaxed as-grown samples, which is due primarily to low density of misfit dislocations in the As+-implanted SiGe epilayers. RTA at higher than 950 degrees C results in the formation of misfit dislocations for the nonimplanted structures, and of combinations of dislocations and precipitates (tentatively identified as GeAs) for the As+-implanted epilayers. The results mean that the strain relaxation mechanism of the As+-implanted Si1-xGex epilayers may be different from that of the nonimplanted Si1-xGex epilayers. (C) 1998 American Institute of Physics.

High-speed photodetector characterization using tunable laser by optical heterodyne technique - art. no. 60200A

An ultra-wide-band frequency response measurement system for optoelectronic devices has been established using the optical heterodyne method utilizing a tunable laser and a wavelenath-fixed distributed feedback laser. By controlling the laser diode cavity length, the beat frequency is swept from DC to hundreds GHz. An outstanding advantage is that this measurement system does not need any high-speed light modulation source and additional calibration. In this measurement, two types of different O/E receivers have been tested. and 3 dB bandwidths measured by this system were 14.4GHz and 40GHz, respectively. The comparisons between experimental data and that from manufacturer show that this method is accurate and easy to carry out.

Kinetic characterization of photoinduced anisotropy in diarylethene film

Based on the theoretical model we have proposed, a complete study on the kinetics of photoincluced anisotropy in diarylethene films is performed. The kinetic curves of molecular concentration, photoincluced dichroism and birefringence are calculated, respectively. It is found that the colored molecular concentration decreases with the increase of the excitation exposure until saturation, and the photoincluced anisotropy increases to a maximum and then decreases gradually. The optimal exposure is 260 J/cm(2). In addition, the transmittance of probe beam reflecting the anisotropy is measured by experiment. The theoretical results are compared with experimental data, and basic concordance is found between both sets of data. (C) 2008 Elsevier B.V. All rights reserved.

CHARACTERIZATION OF PHOTOCONDUCTIVE SEMICONDUCTOR SWITCHES UNDER NONLINEAR MODE CONDITION

A photoconductive semiconductor switch (PCSS) would work in a nonlinear mode under high biased electrical field. The experimental results of nonlinear critical state have shown that both the biased voltage and the laser energy may have working thresholds to turn on the nonlinear modes. The relation between the biased voltage (aid the laser energy is inverse ratio, i.e., higher biased field need lower laser energy for nonlinear mode, and vise versa. At the nonlinear critical point, the output of PCSS is unstable, as both the linear and nonlinear pulse may occur. As the laser energy and biased field increase, the PCSS would work in the nonlinear mode steadily. (C) 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 56-59 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOT 10.1002/mop.24001

Optical characterization of InAs monolayer quantum structures grown on (311)A, (311)B, and (100)GaAs substrates

Low-temperature photoluminescence and excitation spectra from InAs monolayer quantum structures, grown on (311)A, (311)B, and (100) GaAs substrates, are investigated, The structures were grown simultaneously by conventional molecular-beam epitaxy (MBE), The experimental results show that the quality of InAs monolayer on (311)B GaAs substrate is obviously better in crystal quality than those on the two other oriented GaAs substrates. In addition, the transition peaks of the InAs layer grown on (311) GaAs substrates shift to higher energy with respect to that from the InAs layer grown on (100) GaAs substrate.

Characterization of deep centers in AlGaAs/InGaAs/GaAs pseudomorphic HEMT structures grown by molecular beam epitaxy and hydrogen treatment

In AlGaAs/InGaAs/GaAs PM-HEMT structures, the characterization of deep centers, the degradation in electrical and optical properties and their effects on electrical performance of the PM-HEMTs have been investigated by DLTS, SIMS, PL and conventional van der Pauw techniques. The experimental results confirm that the deep level centers correlate strongly with the oxygen content in the AlGaAs layer, the PL response of PM-HEMTs, and the electrical performance of the PM-HEMTs. Hydrogen plasma treatment was used to passivate/annihilate these centers, and the effects of hydrogenation were examined.

Characterization and improvement of GaAs layers grown on Si using an ultrathin a-Si film as a buffer layer

GaAs epilayers grown on Si by metalorganic chemical vapor deposition (MOCVD) using an ultrathin a-Si buffer layer were characterized by deep-level transient spectroscopy (DLTS). Six electron traps with activation energies of 0.79, 0.67, 0.61, 0.55, 0.53 and 0.32 eV below the conduction band were determined by fitting the experimental spectra. Two of the levels, C (0.61 eV) and F (0.32 eV), were first detected in GaAs epilayers on Si and identified as the metastable defects M3 and M4, respectively. In order to improve the quality of GaAs/Si epilayers, another GaAs layer was grown on the GaAs/Si epilayers grown using MOCVD. The deep levels in this regrown GaAs epilayer were also studied using DLTS. Only the EL2 level was found in the regrown GaAs epilayers. These results show that the quality of the GaAs epilayer was greatly improved by applying this growth process.

Facile Synthesis and Characterization of Single Crystalline Bi2S3 with Various Morphologies

Single crystalline Bi2S3 With various morphologies (wires, rods, and flowers) has been successfully prepared via a simple polyol solution process and characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), and transmission electron microscopy (TEM) techniques. The morphologies of Bi2S3 crystals are highly dependent on the experimental parameters, including the reaction temperature, reactant ratio, sulfur source, and additive. The adjustment of these parameters can lead to an obvious shape evolution of products, and the growth mechanism has been proposed.

Fabrication, characterization, and application in surface-enhanced Raman spectrum of assembled type-I collagen-silver nanoparticle multilayered films

In this paper, we report a facile method for the fabrication of type-I collagen-silver nanoparticles (Ag NPs) multilayered films by utilizing type-I collagen as a medium. These samples were characterized by UV-vis spectra photometer, atomic force microscopy, scanning electron microscopy, and Fourier transform IR spectrum. Experimental results show that collagen molecules serve as effective templates to assemble Ag NPs into multilayer films. These samples exhibit high surface-enhanced Raman scattering (SERS) enhancement abilities.

Application to polymer characterization by thermal analysis

The measured results of thermal analysis depend on experimental conditions. The international and national organizations have constituted a series of methods to characterize the physical and chemical properties for substances. The applications to physical transition, chemical reaction, and characteristic parameters of substances are given in the article as examples.

Physical and spectral characterization of the human cyclin A gene and its interactions with anthracycline anticancer drugs

Over expression of cyclin A in human tumors has been linked to cancer by various experimental lines of evidence. However, physical and spectral characterization of the human cyclin A gene and its interactions with anticancer drugs have not been reported. Our gene sequence analysis, singular value decomposition method and melting studies in the presence of antitumor agents, daunomycin, doxorubicin and Hoechst 33258 showed that cyclin A gene had both AT-rich and GC-rich domains. For a ligand with unknown DNA binding specificity, this gene sequence can be used to differentiate its DNA binding preference.

One-step synthesis and characterization of polyelectrolyte-protected gold nanoparticles through a thermal process

Polyelectrolyte-protected gold nanoparticles have been facilely obtained by heating an amine-containing polyelectrolyte/HAuCl4 aqueous solution without the additional step of introducing other reducing agents. All experimental data indicate that different initial molar ratio of polyelectrolyte to gold can lead to the formation of dispersed nanoparticles, quasi one-dimensional aggregates of nanoparticles or bulk metal deposits. More importantly, the growth kinetics of gold particles thus formed can be tuned by changing the initial molar ratio of polyelectrolyte to gold.

In situ synthesis and characterization of multiwalled carbon nanotube/Au nanoparticle composite materials

An effective and facile in Situ reduction approach for the fabrication of carbon nanotube-supported Au nanoparticle (CNT/Au NP) composite nanomaterials is demonstrated in this article. Linear polyethyleneimine (PEI) is ingeniously used as both a functionalizing agent for the multiwalled carbon nanotubes (MWNTs) and a reducing agent for the formation of An NPs. This method involves a simple mixing process followed by a mild heating process. This approach does not need the exhaustive surface oxidation process of CNTs. The coverage of Au NPs on CNTs is tunable by varying the experimental parameters, such as the initial molar ratio of PEI to HAuCl4, the relative concentration of PEI and HAUCl(4) to MWNTs, and the temperature and duration of the heat treatment. More importantly, even the heterogeneous CNT/Au composite nanowires are obtainable through this method. TEM, XPS, and XRD are all used to characterize the CNT/Au composite materials. In addition, the optical and electrocatalytic properties are investigated.

Detection and characterization of non-covalent complex between lappaconitine and beta-cyclodextrin by electrospray ionization tandem mass spectrometry

The non-covalent complexes between lappaconitine (LA) and beta-cyclodextrin (beta-CD) have been detected and characterized by electrospray ionization combined with ion trap tandem mass spectrometry (ESI-MSn). The experimental results showed that only 1:1 non-covalent complex can be formed in different starting molar ratios of LA to beta-CD. Furthermore, the diagnostic fragmentation of the beta-CD-LA complex, with a significant contribution of covalent fragmentation of LA leaving the N-acetyl anthranoyl (AN) moiety inserted to beta-CD, provided the convincing evidence for the formation of non-covalent complex between LA and beta-CD and the cite of LA molecule included to cavity of beta-CD assigned to AN residue.

The AFM characterization of Ni(phen)(3)(2+) fixing effects on DNA

In this paper, the fixing and stretching effect of Ni(phen)(2+)(3) with different concentrations on DNA had been studied by Tapping mode AFM. Under an ambient condition, the high-resolution DNA images were obtained, the average height, width and length of well spread DNA molecules were measured. The results showed that because of the variations of ionic concentration, the density and topography of DNA molecules on substrate had a great difference. The AFM and gel electrophoresis results also showed that, under our experimental condition, DNA molecules kept intact, Ni(phen)(2+)(3) did not catalyze the cleavage activity of EcoRI, therefore, Ni (phen)(2+)(3) would be used to make high-resolution physical mapping of DNA by AFM.