Temperature Insensitivity of Optical Properties of InAs/GaAs Quantum Dots due to a Pregrown InGaAs Quantum Well

Both the peak position and linewidth in the photoluminescence spectrum of the InAs/GaAs quantum dots usually vary in an anomalous way with increasing temperature. Such anomalous optical behaviour is eliminated by inserting an In0.2Ga0.8As quantum well below the quantum dot layer in molecular beam epitaxy. The insensitivity of the photoluminescence spectra to temperature is explained in terms of the effective carrier redistribution between quantum dots through the In0.2Ga0.8As quantum well.

Effects of lattice vibration on the effective mass of quasi-two-dimensional strong-coupling polaron

The effects of lattice vibration on the system in which the electron is weakly coupled with bulk longitudinal optical phonons and strongly coupled with interface optical phonons in an infinite quantum well were studied by using Tokuda' linear-combination operator and a modified LLP variational method. The expressions for the effective mass of the polaron in a quantum well QW as functions of the well's width and temperature were derived. In particular, the law of the change of the vibration frequency of the polaron changing with well' s width and temperature are obtained. Numerical results of the effective mass and the vibration frequency of the polaron for KI/AgCl/Kl QW show that the vibration frequency and the effective mass of the polaron decrease with increasing well's width and temperature, but the contribution of the interaction between the electron and the different branches of phonons to the effective mass and the vibration frequency and the change of their variation with the well's width and temperature are greatly different.

Temperature-independent fiber Bragg grating strain sensor using bimetal cantilever

A new packaged fiber Bragg grating using bimetal cantilever beam as the strain agent is presented. The grating is two-point attached on one specific surface of the bimetal beam which consists of two metallic material with different thermal-expansion coefficient. Thereby the grating can be compressed or stretched along with the cantilever beam while temperature varies and temperature compensation can be realized. At the same time, grating chirping can be avoided for the particular attaching method. Experiment results demonstrated that the device is able to automatically compensate temperature induced wavelength shift. The temperature dependence of Bragg wavelength reduced to -0.4 pm/degrees C over the temperature range from -20 to 60 degrees C. This fiber grating package technique is cost effective and can be used in strain sensing. (c) 2005 Elsevier Inc. All rights reserved.

Design of the low-temperature AlN interlayer for GaN grown on Si(111) substrate

We have investigated the effect of the thickness and layer number of the low-temperature A1N interlayer (LT-A1N IL) on the stress relaxation and the crystal quality of GaN epilayers grown on Si (111) substrate by metalorganic chemical vapor deposition. It is found that the stress decreases with the increase of the LT-AIN IL thickness, but the crystal quality of the GaN epilayer goes worse quickly when the LT-AIN IL thickness is larger than 16 nm. This is because the increase of the LT-AIN IL thickness will increase the coalescence thickness of its upper GaN layer, which sensitively affects the crystal quality of the epilayer. Using multiple LT-AIN ILs is an effective method not only to reduce the stress, but also to improve the crystal quality of the GaN epilayer. With the increase of the interlayer number, the probability that dislocations are blocked increases and the probability that dislocations are produced at interfaces decreases. Thus, dislocations in the most upper part of GaN are reduced, resulting in the improvement of the crystal quality. Finally, it is suggested that when the total thickness of the epilayer is fixed, both the thickness and the number of the LT-AIN IL should be carefully designed to reduce the stress and improve the crystal quality of the epilayer simultaneously. (c) 2004 Elsevier B.V.. All rights reserved.

Synthesis and temperature-dependent near-band-edge emission of chain-like Mg-doped ZnO nanoparticles

Chain-like Mg-doped ZnO nanoparticles were prepared using a wet chemical method combined with subsequent heat treatment. The blueshifted near-band-edge emission of the doped ZnO sample with respect to the undoped one was investigated by temperature-dependent photoluminescence. Based on the energy shift of the free-exciton transition, a band gap enlargement of similar to 83 meV was estimated, which seems to result in the equivalent shift of the bound-exciton transition. At 50 K, the transformation from the donor-acceptor-pair to free-to-acceptor emissions was observed for both the undoped and doped samples. The results show that Mg doping leads to the decrease of the acceptor binding energy. (c) 2006 American Institute of Physics.

Realization of quantum cascade laser operating at room temperature

X-ray diffraction, as an effective probe and simple method, is used to ascertain the precise control of the epilayer thickness and composition. Intersubband absorption from the whole structure of the QC laser is used to monitor the wavelength of the QC laser and the material quality. Path for growth of high-quality InP-based InGaAs/InAlAs quantum cascade laser material is realized. The absorption between two quantized energy levels is achieved at similar to4.7 mum. Room temperature laser action is achieved at lambda approximate to 5.1 - 5.2 mum. For some devices, if the peak output power is kept at 2 mW, quasi-continuous wave operation at room temperature can persist for more than I It. (C) 2002 Elsevier Science B.V. All rights reserved.

Conduction band offset and electron effective mass in GaInNAs/GaAs quantum-well structures with low nitrogen concentration

We have investigated the optical transitions in Ga1-yInyNxAs1-x/GaAs single and multiple quantum wells using photovoltaic measurements at room temperature. From a theoretical fit to the experimental data, the conduction band offset Q(c), electron effective mass m(e)*, and band gap energy E-g were estimated. It was found that the Q(c) is dependent on the indium concentration, but independent on the nitrogen concentration over the range x=(0-1)%. The m(e)* of GaInNAs is much greater than that of InGaAs with the same concentration of indium, and increases as the nitrogen concentration increases up to 1%. Our experimental results for the m(e)* and E-g of GaInNAs are quantitatively explained by the two-band model based on the strong interaction of the conduction band minimum with the localized N states. (C) 2001 American Institute of Physics.

Effective method for evaluation of semiconductor laser quality

The measurements of one hundred 1.3 mu m planar buried crescent (PBC) structure InGaAsP/InP lasers demonstrate that parameters given by the electrical derivative of varied temperature and the variation of the parameters with temperature can be used to appraise the quality and reliability of semiconductor lasers effectual. By measurement of electrical derivative curves one can evaluate the quality of epitaxial wafer and chip, find the problems in the material and the technology, offer the useful information on increasing the quality and improving the technology of devices. (C) 2000 Elsevier Science Ltd. All rights reserved.

Observation of photogalvanic current for interband absorption in InN films at room temperature

The linear and circular photogalvanic effects have been observed in undoped InN films for the interband transition by irradiation of 1060 nm laser at room temperature. The spin polarized photocurrent depends on the degree of polarization, and changes its sip when the radiation helicity changes from left-handed to right-handed. This result indicates the sizeable spin-orbit interaction in the InN epitaxial layer and provides an effective method to generate spin polarized photocurrent and to detect spin-splitting effect in semiconductors with promising applications on spintronics.

Substrate temperature dependence of ZnTe epilayers grown on GaAs(001) by molecular beam epitaxy

ZnTe thin films have been grown on GaAs(0 0 1) substrates at different temperatures with constant Zn and Te beam equivalent pressures (BEPs) by molecular beam epitaxy (MBE). In situ reflection high-energy electron diffraction (RHEED) observation indicates that two-dimensional (2D) growth mode can be established after around one-minute three-dimensional (3D) nucleation by increasing the substrate temperature to 340 degrees C. We found that Zn desorption from the ZnTe surface is much greater than that of Te at higher temperatures, and estimated the Zn sticking coefficient by the evolution of growth rate. The Zn sticking coefficient decreases from 0.93 to 0.58 as the temperature is elevated from 320 to 400 degrees C. The ZnTe epilayer grown at 360 degrees C displays the narrowest full-width at half-maximum (FWHM) of 660 arcsec from (0 0 4) reflection in double-crystal X-ray rocking curve (DCXRC) measurements. The surface morphology of ZnTe epilayers is strongly dependent on the substrate temperature, and the root-mean-square (RMS) roughness diminishes drastically with the increase in temperature.

STUDY OF THE LONG-TERM STABILITY OF THE EFFECTIVE CONCENTRATION OF IONIZED SPACE CHARGES (N-EFF) OF NEUTRON-IRRADIATED SILICON DETECTORS FABRICATED BY VARIOUS THERMAL-OXIDATION PROCESSES

Experimental study of the reverse annealing of the effective concentration of ionized space charges (N-eff, also called effective doping or impurity concentration) of neutron irradiated high resistivity silicon detectors fabricated on wafers with various thermal oxides has been conducted at room temperature (RT) and elevated temperature (ET). Various thermal oxidations with temperatures ranging from 975 degrees C to 1200 degrees C with and without trichlorethane (TCA), which result in different concentrations of oxygen and carbon impurities, have been used. It has been found that, the RT annealing of the N-eff is hindered initially (t < 42 days after the radiation) for detectors made on the oxides with high carbon concentrations, and there was no carbon effect on the long term (t > 42 days after the radiation) N-eff reverse annealing. No apparent effect of oxygen on the stability of N-eff has been observed at RT. At elevated temperature (80 degrees C), no significant difference in annealing behavior has been found for detectors fabricated on silicon wafers with various thermal oxides. It is apparent that for the initial stages (first and/or second) of N-eff reverse annealing, there may tie no dependence on the oxygen and carbon concentrations in the ranges studied.

川西亚高山两种针叶树幼苗对增温和施氮的响应

人类活动引起全球大气中温室气体（CO2、CH4、NOx）浓度不断增加，致使地球表面温度在过去的100 年中已经增长了0.74 ± 0.18℃，预计到本世纪末将会增加1.1-6.4℃。此外，氮沉降也是当今社会的重要环境问题，随着经济发展的全球化, 高氮沉降也呈现出全球化趋势。全球气候变暖和氮沉降给陆地生态系统的地上、地下生物学和生物地球化学过程所带来巨大影响越来越引起人们的关注。 本文以川西亚高山针叶林的两个重要树种云杉和油松幼苗为研究对象，采用红外辐射增温（空气增温2.1℃，土壤增温2.6℃）和根部施氮（施氮量25 g N m-2yr-1）的方法，从生长形态、光合作用、抗氧化能力和矿质营养等方面研究这两种幼苗对气候变暖和氮沉降的响应。该实验为室外控制实验，包括四个处理：(1)不增温+不施氮（UU）；(2) 不增温+施氮（UF）；(3) 增温+不施氮（WU）；(4) 增温+施氮（WF）。本研究旨在从生理生化、物质代谢 、生长及形态等不同水平上研究模拟增温和施氮对两种树苗的联合效应，提高我们对全球变化下亚高山针叶林早期更新过程的理解，同时也为森林管理提供科学依据。具体研究结果如下： 单独增温处理显著提高了云杉和油松幼苗的地茎、叶重、茎重、根重以及总生物量；单独施氮处理也增加了两种幼苗的株高和总生物量。而增温和施氮联合作用对两种幼苗生长的影响并不相同，联合作用对云杉幼苗生长指标的正效应显著低于单独施氮处理，但是联合作用比单独增温或施氮更大程度的促进了油松幼苗生物量的积累。 单独增温和施氮都有利于提高云杉和油松叶片中叶绿素含量、净光合速率(A)、最大净光合速率(Amax)、表观量子效率（Φ）、最大光能转化效率（Fv/Fm）和量子产量（Y）。与对两种幼苗生长指标的影响相似，加氮和增温共同作用下油松幼苗的以上光合指标比在单独增温或施氮处理下有更大程度的提高；而联合作用下云杉幼苗叶绿素含量、净光合速率、最大净光合速率、表观量子效率、最大光能转化效率以及量子产量比单独施氮处理明显地降低。 增温和施氮都显著地降低了云杉和油松幼苗针叶组织中活性氧和丙二醛的积累。交互作用降低了云杉幼苗叶片的抗氧化酶活性、脯氨酸和ASA 的含量，却显著提高了油松幼苗SOD、POD、APX 等抗氧化酶的活性，并且对油松幼苗脯氨酸和ASA 积累的促进作用比单一因子更加明显。因此，增温和施氮共同作用下油松幼苗叶片中O2-产生速率、H2O2 及MDA 含量明显降低，而云杉叶片中只有O2-产生速率出现降低趋势。 增温和施氮都降低了云杉体内的P、Ca、Mg 元素的含量，增加了Cu、Zn、Mn 在各器官内的积累。对油松幼苗而言，增温和加氮单独作用也显著降低了Ca 含量增加了Cu、Zn、Mn 的积累，但是不同于云杉幼苗的是P、Mg 也显著增加。增温和施氮联合作用对云杉幼苗体内元素的影响与单一施氮处理或增温处理相似，不同的是比单一因子作用更为明显降低了P、Ca、Mg 含量，增加了植株中N、Cu、Zn、Mn 的含量，但是油松矿质元素含量在联合作用下并没有产生类似于云杉幼苗的双因子叠加效应。 总之，尽管单独增温或者施氮都有利于云杉和油松幼苗生长指标、光合能力以及抗氧化能力的提高。但是，增温和施氮对云杉幼苗生长生理的促进效应非但没有在交互作用下有更大的提高，反而低于单独氮处理。与此不同的是，增温和施氮联合作用比单因子作用更有利于油松幼苗生长及生理指标的提高。 With the continued increase in atmospheric concentrations of greenhouse gases (CO2、CH4、NOx), the mean global surface temperature has increased by about 0.74 ± 0.18℃ over the past century and is predicted to rise by as much as 6.4℃ during this century. Besides global warming, nitrogen deposition is another serious environmental problem caused by human activities, and high nitrogen load has become globalization as a result of global economy development. Global climate warming and nitrogen deposition have induced dramatic alternations in above - and below- ground biology and biogeochemistry process in terrestrial ecosystems, and more and more attention has been invited to those problems. This experiment mainly studies two important species Picea asperata and Pinus tabulaeformis in subalpine coniferous forest of western Sichuan, China. Infared heaters are induced to increase both air and soil temperature by 2.1℃ and 2.6 ℃, respectively. Ammonium nitrate solution (for a total equivalent to 25 g N m-2 year-1) is added to soil surface. There are four treatments in this study: (1) unwarmed unfertilized (UU); (2) unwarmed fertilized (UF); (3) warmed unfertilized (WU); (4) warmed fertilized (WF). This study is conducted to determine the influences of experimental warming and nitrogen fertilization on physiolchemistry, nutrition metabolism, growth and morphology in the two coniferous species seedlings. The current study is favorable for increasing our understanding on the early phase of regeneration behavior in subalpine coniferous forest, and it also provide scientific direction for forest management under future global changes. The results are as follows: Artificial warming alone significantly increased basal diameter, leaf mass, stem mass, root mass and total biomass for Picea asperata and Pinus tabulaeformis seedlings, and single nitrogen fertilization are also favorable for growth of the two species and stimulate plant hight and total biomass. The two species seedlings respond differently to the combination of elevated temperature and nitrogen addition. Warming combined with nitrogen fertilization weakens the positive effects of nitrogen addition for growth of Picea asperata seedlings. However, the combination of elevated temperature and nitrogen fertilization further increase biomass accumulation of Pinus tabulaeformis seedlings. Both elevated temperature alone and nitrogen fertilization alone can increase photosynthetic pigments contents, net photosynthetic rate (A), maximum net photosynthetic rate (Amax), apparent quantity yield (Φ), maximum photochemical efficiency of photosystem II (Fv/Fm) and effective quantum yield (Y). Similarly with growth parameters, the combination of warming and nitrogen addition induced more increment of these above photosynthetic parameters for Pinus tabulaeformis seedlings. However, these photosynthetic parameters of Picea asperata seedlings under the combination of warming and nitrogen addition are lower than those under nitrogen fertilization alone. The levels of active oxygen species (AOS) and malodiadehyde (MDA) in needles of the two coniferous species seedling are obviously decreased by experimental warming or additional nitrogen. Warming combined with nitrogen fertilizer reduces the activities of SOD, CAT and APX, and the contents of proline and ASA of Picea asperata seedlings, but the combination significantly increases activities of these antioxidant enzymes in needlels of Pinus tabulaeformis seedlings and further improves the accumulation of proline and ASA compared to either artificial warming or nitrogen addition. Therefore, the rate of O2 - production, the contents of H2O2 and MDA in needles of Pinus tabulaeformis seedlings are remarkably reduced by the combination of warming and nitrogen addition, but the combination only significantly decreased the rate of O2 - production of Picea asperata seedlings. Elevated temperature or nitrogen fertilization decrease the contents of P, Ca, Mg but increase Cu, Zn, Mn contents for Picea asperata seedlings. For Pinus tabulaeformis seedlings, elevated temperature alone and nitrogen fertilization alone decreased Ca, but increased P, Mg, Cu, Zn, Mn contents. The effects of the combination of warming and nitrogen addition on these element contents in needles of Picea asperata seedlings are added or multiplied the effects of warming and nitrogen addition alone, resulting in less contens of P, Ca, Mg and more contents of Cu, Zn, Mn than either elevated temperature or nitrogen fertilization. Howere, these adding or multipluing single-factor effects on contents of these elements are not observed in the case of Pinus tabulaeformis seedlings. In conclusion, growth parameters, photosynthetic capacities and antioxidant abilities of Picea tasperata and Pinus abulaeformis seedlings are improved by experimental warming or nitrogen fertilization. Interestingly, the positive effects of warming and nitrogen addition on growth and physiological performances are not multiplied by the combination of elevated temperature and nitrogen fertilization, even dempened for Picea asperata seedlings. However, for Pinus tabulaeformis seedlings, growth and physiological performances are further improved by the combination.

Single nucleon potential and effective mass with ground state correlations in hot nuclear matter

In the framework of the finite temperature Brueckner-Hartree-Fock approach including the contribution of the microscopic three-body force, the single nuclear potential and the nucleon effective mass in hot nuclear matter at various temperatures and densities have been calculated by using the hole-line expansion for mass operator, and the effects of the three-body forces and the ground state correlations on the single nucleon potential have been investigated. It is shown that both the ground state correlations and the three-body force affect considerably the density and temperature dependence of the single nucleon potential. The rearrangement correction in the single nucleon potential is repulsive and it reduces remarkably the attraction of the single nucleon potential in the low-momentum region. The rearrangement contribution due to the ground state correlations becomes smaller as the temperature rises up and becomes larger as the density increases. The effect of the three-body force on the ground state correlations is to reduce the contribution of rearrangement. At high densities, the single nucleon potential containing both the rearrangement correction and the contribution of the three-body force becomes more repulsive as the temperature increases.

Room-temperature synthesis and luminescence properties of Eu3+/Tb3+-doped La(1,3,5-BTC)(H2O)(6)

The facile, rapid, and effective synthesis of coordination polymer La(1,3,5-BTC)(H2O)(6) has been realized via direct precipitation at room temperature. It is found that the crystal structure is of monoclinic, space group Cc. The doped Eu3+ or Tb3+ ions samples have the same phase and exhibit red and green emissions under UV light excitation, respectively.

Rare Earth Pyrophosphates: Effective Catalysts for the Production of Acrolein from Vapor-phase Dehydration of Glycerol

Vapor-phase dehydration of glycerol to produce acrolein was investigated at 320 A degrees C over rare earth (including La, Ce, Nd, Sm, Eu, Gd, Tb, Ho, Er, Tm, Yb, Lu) pyrophosphates, which were prepared by precipitation method. The most promising catalysts were characterized by means of XRD, FT-IR, TG-DTA, BET and NH3-TPD measurements. The excellent catalytic performance of rare earth pyrophosphate depends on the appropriate surface acidity which can be obtained by the control of pH value in the precipitation and the calcination temperature, e.g. Nd-4(P2O7)(3) precipitated at pH = 6 and calcined at 500 A degrees C in the catalyst preparation.