158 resultados para Electron density
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We have studied the scattering process of AlGaAs/GaAs two-dimensional electron gas with the nearby embedded GaSb/GaAs type-II quantum dots (QDs) at low temperature. Quantum Hall effect and Shubnikov-de Haas oscillation were performed to measure the electron density n(2D), the transport lifetime tau(t) and the quantum lifetime tau(q) under various biased gate voltage. By comparing measured results of QDs sample with that of reference sample without embedded QDs, mobilities (transport mobility mu(t) and quantum mobility mu(q)) dominated by GaSb QDs scattering were extracted as functions of n(2D). It was found that the ratios of tau(t) to tau(q) were varying within the range of 1-4, implying the scattering mechanism belonging to the sort of short-range interaction. In the framework of Born approximation, a scattering model considering rectangular-shaped potential with constant barrier height was successfully applied to explain the transport experimental data. In addition, an oscillating ratio of tau(t)/tau(q) with the increasing n(2D) was predicted in the model.
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Photoluminescence (PL) and temperature-dependent Hall effect measurements were carried out in (0001) and (11 (2) over bar0) AlGaN/GaN heterostructures grown on sapphire substrates by metalorganic chemical vapor deposition. There are strong spontaneous and piezoelectric electric fields (SPF) along the growth orientation of the (0001) AlGaN/GaN heterostructures. At the same time there are no corresponding SPF along that of the (1120) AlGaN/GaN. A strong PL peak related to the recombination between two-dimensional electron gas (2DEG) and photoexcited holes was observed at 3.258 eV at room temperature in (0001) AlGaN/GaN heterointerfaces while no corresponding PL peak was observed in (11 (2) over bar0). The existence of a 2DEG was observed in (0001) AlGaN/GaN multi-layers with a mobility saturated at 6000 cm(2)/V s below 80 K, whereas a much lower mobility was measured in (11 (2) over bar0). These results indicated that the SPF was the main element to cause the high mobility and high sheet-electron-density 2DEG in AlGaN/GaN heterostructures. (C) 2004 Elsevier B.V. All rights reserved.
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A two-dimensional quantum model based on the solution of Schrodinger and Poisson equations is first presented for In0.52Al0.48As/In0.53Ga0.47As/InP HEMT. According to the model, the two-dimensional distributions of electron density and transverse electric field in the channel of InAlAs/InGaAs HEMT are discussed.
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In this paper, the calculated results about the propagation properties of electromagnetic wave in a plasma slab are described. The relationship of the propagation properties with frequencies of electromagnetic wave, and parameters of plasma (electron temperature, electron density, dimensionless collision frequency and the size of the plasma slab) is analyzed.
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The experimental results for the excited time of the nonequlibrium radiation and the ionization behind strong shock waves are presented. Using an optical multichannel analyzer, InSb infrared detectors and near-free-molecular Langmuir probes, the infrared radiation, the electron density of air and the nonequilibrium radiation spectra at different moments of the relaxation process in nitrogen test gas behind normal shock waves were obtained, respectively, in hydrogen oxygen combustion driven shock tubes.
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This paper presents the electromagnetic wave propagation characteristics in plasma and the attenuation coefficients of the microwave in terms of the parameters n(e), v, w, L, w(b). The phi800 mm high temperature shock tube has been used to produce a uniform plasma. In order to get the attenuation of the electromagnetic wave through the plasma behind a shock wave, the microwave transmission has been used to measure the relative change of the wave power. The working frequency is f = (2 similar to 35) GHz (w = 2pif, wave length lambda = 15 cm similar to 8 mm). The electron density in the plasma is n(e) = (3 x 10(10) similar to 1 x 10(14)) cm(-3). The collision frequency v = (1 x 10(8) similar to 6 x 10(10)) Hz. The thickness of the plasma layer L = (2 similar to 80) cm. The electron circular frequency w(b) = eB(0)/m(e), magnetic flux density B-0 = (0 similar to 0.84) T. The experimental results show that when the plasma layer is thick (such as L/lambda greater than or equal to 10), the correlation between the attenuation coefficients of the electromagnetic waves and the parameters n(e), v, w, L determined from the measurements are in good agreement with the theoretical predictions of electromagnetic wave propagations in the uniform infinite plasma. When the plasma layer is thin (such as when both L and lambda are of the same order), the theoretical results are only in a qualitative agreement with the experimental observations in the present parameter range, but the formula of the electromagnetic wave propagation theory in an uniform infinite plasma can not be used for quantitative computations of the correlation between the attenuation coefficients and the parameters n(e), v, w, L. In fact, if w < w(p), v(2) much less than w(2), the power attenuations K of the electromagnetic waves obtained from the measurements in the thin-layer plasma are much smaller than those of the theoretical predictions. On the other hand, if w > w(p), v(2) much less than w(2) (just v approximate to f), the measurements are much larger than the theoretical results. Also, we have measured the electromagnetic wave power attenuation value under the magnetic field and without a magnetic field. The result indicates that the value measured under the magnetic field shows a distinct improvement.
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An efficient method for solving the spatially inhomogeneous Boltzmann equation in a two-term approximation for low-pressure inductively coupled plasmas has been developed. The electron distribution function (EDF), a function of total electron energy and two spatial coordinates, is found self-consistently with the static space-charge potential which is computed from a 2D fluid model, and the rf electric field profile which is calculated from the Maxwell equations. The EDF and the spatial distributions of the electron density, potential, temperature, ionization rate, and the inductive electric field are calculated and discussed. (C) 1996 American Institute of Physics.
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A nonlinear theory of an intermediate pressure discharge column in a magnetic field is presented. Motion of the neutral gas is considered. The continuity and momentum transfer equations for charged particles and neutral particles are solved by numerical methods. The main result obtained is that the rotating velocities of ionic gas and neutral gas are approximately equal. Bohm's criterion and potential inversion in the presence of neutral gas motion are also discussed.
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采用黏性激波层基本方程组对有无泰氟龙烧蚀两种情况下的钝锥体化学非平衡绕流作了数值求解,以研究泰氟龙烧蚀对流场电子密度的影响规律。算例结果表明:泰氟龙烧蚀确有降低流场电子密度的效应。平衡催化壁工况下这种效应的强度,显著大于非催化壁工况下的强度;远下游截面处的这种效应的强度,显著大于驻点区的强度。此外,通过计算结果分析,对形成上述影响规律的原因作了初步讨论。
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二十世纪八十年代,当比利时冶金研究中心(CRM)开发出CO_2激光毛化冷轧辊技术后,尝试用YAG激光进行轧辊毛化一直吸引着众多的研究者,这是因为YAG(1.06μm)激光波长比CO_2(10.6μm)激光波长短一个量级,材料对YAG激光有更高的吸收率,并用YAG激光可以聚焦到更小的光斑尺寸,同时使用电信号驱动的声光开关技术便于对毛化分布进行可设定控制。但是用传统声光调制的YAG激光虽然可以碇以很高的脉冲频率(>30kHz),但单脉冲有量仅为10mJ左右,难以达到辊面毛化粗糙度的要求,因此人们认为YAG激光用于毛化的主要困难是脉冲能量太小。
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Space-resolved spectra of line-shaped laser-produced magnesium plasmas in the normal direction of the target have been obtained using a pinhole crystal spectrograph. These spectra are treated by a spectrum analyzing code for obtaining the true spectra and fine structures of overlapped lines. The spatial distributions of electron temperature and density along the normal direction of the target surface have been obtained with different spectral diagnostic techniques. Especially, the electron density plateaus beyond the critical surface in line-shaped magnesium plasmas have been obtained with a fitting technique applied to the Stark-broadened Ly-alpha wings of hydrogenic ions. The difference of plasma parameters between those obtained by different diagnostic techniques is discussed. Other phenomena, such as plasma satellites, population inversion, etc., which are observed in magnesium plasmas, are also presented.
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The variation of the energy interval between the intercombination line ( 1s2p(P-3(1))-> 1s(2)) and the resonance line ( 1s2p(P-1(1))-> 1s(2)) of He-like aluminium with plasma density and temperature is investigated. Since such energy interval is equivalent to the exchange energy of the state 1s2p(P-3(1)), we consider the dependence of this energy shift on the plasma environment. It was found that the shifts of exchange energy increase ( decrease) with the increase of electron density ( electron temperature), and the shifts of exchange energy become more sensitive to the electron density as the electron temperature decreases, i. e. in the strongly coupled plasma regime. An approximately linear relation is found between the shifts of exchange energy and the electron density. The results show that dense plasma effects are very important for the simulation of the spectral fine structure. The relative shifts between the intercombination ( 1s2p(P-3(1))-> 1s(2)) and the resonance line ( 1s2p(P-1(1))-> 1s(2)) are discussed for diagnostic applications.
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采用离子球模型,通过自洽求解Boltzmann方程和Poisson方程,得到类氦氖离子Kα线系的两条电偶极辐射光谱能量随等离子体环境的漂移.结果显示,Kα线系电偶极谱线随等离子体电子密度增大发生红移,红移量与等离子体电子密度有近似的正比关系;随着等离子体电子温度的降低,光谱红移对等离子体电子密度的敏感性增大。另外,所研究的两条谱线间的能量间隔随等离子体电子密度的增大而减小,减小量随等离子体电子密度的变化也呈现出近似的线性规律。值得注意的是,类氦氖Kα线系中两条电偶极谱线分别为互组合线与共振谱线,而其能量差
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x射线激光探针干涉方法是诊断高温高密度激光等离子体电子密度等信息的重要工具.利用神光Ⅱ装置输出激光驱动的类镍-银x射线激光作为探针,成功地进行了马赫-曾德尔干涉法诊断实验,获得了清晰的包含等离子体信息的动态干涉条纹图像,并据此给出了待测C8H8等离子体临界面附近电子密度的空间分布。
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We investigate the nonlinear propagation of ultrashort pulses on resonant intersubband transitions in multiple semiconductor quantum wells. It is shown that the nonlinearity rooted from electron-electron interactions destroys the condition giving rise to self-induced transparency. However, by adjusting the area of input pulse, we find the signatures of self-induced transmission due to a full Rabi flopping of the electron density, and this phenomenon can be approximately interpreted by the traditional standard area theorem via defining the effective area of input pulse.