Improvement in refractive-index change in LiNbO3 : Ce : Cu by applying an external electric field

By jointly solving two-centre material equations with a nonzero external electric field and coupled-wave equations, we have numerically studied the dependence of the non-volatile holographic recording in LiNbO3:Ce:Cu crystals on the external electric field. The dominative photovoltaic effect of the non-volatile holographic recording in doubly doped LiNbO3 crystals is directly verified. And an external electric field that is applied in the positive direction along the c-axis (or a large one in the negative direction of the c-axis) in the recording phase and another one that is applied in the negative direction of the c-axis in the fixing phase are both proved to benefit strong photorefractive performances. Experimental verifications are given with a small electric field applied externally.

Electric and magnetic losses and gains in determining the sign of refractive index

Within the framework of classic electromagnetic theories, we have studied the sign of refractive index of optical medias with the emphases on the roles of the electric and magnetic losses and gains. Starting from the Maxwell equations for an isotropic and homogeneous media, we have derived the general form of the complex refractive index and its relation with the complex electric permittivity and magnetic permeability, i.e. n = root epsilon mu, in which the intrinsic electric and magnetic losses and gains are included as the imaginary parts of the complex permittivity and permeability, respectively, as epsilon = epsilon(r) + i(epsilon i) and mu = mu(r) + i mu(i). The electric and magnetic losses are present in all passive materials, which correspond, respectively, to the positive imaginary permittivity and permeability epsilon(i) > 0 and mu(i) > 0. The electric and magnetic gains are present in materials where external pumping sources enable the light to be amplified instead of attenuated, which correspond, respectively, to the negative imaginary permittivity and permeability epsilon(i) < 0 and mu(i) < 0. We have analyzed and determined uniquely the sign of the refractive index, for all possible combinations of the four parameters epsilon(r), mu(r), epsilon(i), and mu(i), in light of the relativistic causality. A causal solution requires that the wave impedance be positive Re {Z} > 0. We illustrate the results for all cases in tables of the sign of refractive index. One of the most important messages from the sign tables is that, apart from the well-known case where simultaneously epsilon < 0 and mu < 0, there are other possibilities for the refractive index to be negative n < 0, for example, for epsilon(r) < 0, mu(r) > 0, epsilon(i) > 0, and mu(i) > 0, the refractive index is negative n < 0 provided mu(i)/epsilon(i) > mu(r)/vertical bar epsilon(r)vertical bar. (c) 2006 Elsevier B.V. All rights reserved.

Thermal and electric conductivity of near-zero thermal expansion ZrW 2O8//ZrO2 composites

In this work, the microstructure, thermal and electric conductivity properties of near-zero thermal expansion ZrW2O8/ZrO2 and Al2O3 added ZrW2O8/ZrO2 composites were studied. Both the two composites exhibit very low thermal conductivity and the thermal conductivity decreases slightly as the temperature increases. The electric conductivity of the two composites increases with the increasing of the measurement temperature. The Al2O3 added ZrW2O8/ZrO2 composite has higher thermal and electric conductivity than ZrW2O8/ZrO2 composite. The most important factor which causes the difference of the thermal and electric conductivity of the composites is the porosity. (C) 2008 The Ceramic Society of Japan. All rights reserved.

Electric field enhancement in guided-mode resonance filters

Electric fields inside guided-mode resonance filters (GMRFs) may be intensified by resonance effects. The electric field enhancement is investigated in two GMRFs: one is resonant at normal incidence, the other at oblique incidence. It is shown that the two GMRFs exhibit different behaviors in their electric enhancement. Differences between the electric field distributions of the two GMRFs arise because coupling between counter-propagating modes occurs in the first case. It is also shown that the order of the electric field of maximum amplitude can be controlled by modulation of the dielectric constant of the grating. (c) 2006 Optical Society of America.

Electric field distribution in resonant reflection filters under normal incidence

Electric field distributions inside resonant reflection filters constructed using planar periodic waveguides are investigated in this paper. The electric fields may be intensified by resonance effects. Although the resonant reflection peaks can be quite narrow using weakly modulated planar periodic waveguides, the strong electric field enhancement limits their use in high-power laser systems. Strongly modulated waveguides may be used to reduce the electric field enhancement and a cover layer may be used to narrow the bandwidth at the same time. Desired results (i.e. almost no electric field enhancement together with narrow bandwidth) can be realized using this simple structure.

Avoidant Learning Ability in Free Flying Housefly (Aldrichina grahami)by Electric Shock

下载PDF阅读器研究证实:蜜蜂和果蝇具有良好的学习记忆能力.利用自主改良的研究装置对另一种具有强大生存本能的双翅目昆虫--巨尾阿丽蝇(Aldrichina grahami)在自由状态下电击同避学习能力进行研究.结果表明,巨尾阿丽蝇具有良好的学习记忆能力,因为当刺激电压范围为5V到45V时,观察到巨尾阿丽蝇有显著的回避电刺激行为,而当电压达到60V时会受到明显伤害.由此推测,巨尾阿丽蝇适合作为神经系统研究的动物模型.该实验所采用的实验范例较以往有所改进,适合作为自由状态下研究昆虫的工具.

Reversible disconnection of the hippocampal-prelimbic cortical circuit impairs spatial learning but not passive avoidance learning in rats

Wistar rats, treated with the GABA(A) receptor agonist muscimol, were used to investigate the role of the hippocampal-prelimbic cortical (Hip-PLC) circuit in spatial learning in the Morris water maze task, and in passive avoidance learning in the step-thr

Compact Reconfigurable Binary-Decision-Diagram Logic Circuit on a GaAs Nanowire Network

We describe a reconfigurable binary-decision-diagram logic circuit based on Shannon's expansion of Boolean logic function and its graphical representation on a semiconductor nanowire network. The circuit is reconfigured by using programmable switches that electrically connect and disconnect a small number of branches. This circuit has a compact structure with a small number of devices compared with the conventional look-up table architecture. A variable Boolean logic circuit was fabricated on an etched GaAs nanowire network having hexagonal topology with Schottky wrap gates and SiN-based programmable switches, and its correct logic operation together with dynamic reconfiguration was demonstrated.

Tuning photoluminescence of single InAs quantum dot by electric field

By using photoluminescence (PL) and time-resolved PL spectra, the optical properties of single InAs quantum dot (QD) embedded in the p-1-n structure have been studied under an applied electric field With the increasing of electric field, the exciton lifetime increases due to the Stark effect. We noticed that the decrease or quenching of PL intensity with increasing the electric field is mainly due to the decrease of the carriers captured by QD.

The effect of an electric field on the nonlinear response of InAs/GaAs quantum dots

The refractive nonlinearities of InAs/GaAs quantum dots under a dc electric field at photon energies above its band gap energy have been studied using the reflection Z-scan technique. The effect of the dc electric field on the nonlinear response of InAs/GaAs quantum dots showed similar linear and quadratic electro-optic effects as in the linear response regime at low fields. This implies that the electro-optic effect in the nonlinear regime is analogous to the response in the linear regime for semiconductor quantum dots. Our experimental results show the potential for voltage tunability in InAs quantum dot-based nonlinear electro-optic devices.

Small-Signal Equivalent-Circuit Model and Characterization of 1.55-mu m Buried Tunnel Junction Vertical-Cavity Surface-Emitting Lasers

The work was supported in part by the National Natural Science Foundation of China under Grant 60536010, Grant 60606019, Grant 60777029, and Grant 60820106004, and in part by the National Basic Research Program of China under Grant 2006CB604902, Grant 2006CB302806, and Grant 2006dfa11880.

Electric tunable of electron spin polarization in hybrid magnetic-electric barrier structures

Electron spin-dependent transport properties have been theoretically investigated in two-dimensional electron gas (2DEG) modulated by the magnetic field generated by a pair of anti-parallel magnetization ferromagnetic metal stripes and the electrostatic potential provided by a normal metal Schottky stripe. It is shown that the energy positions of the spin-polarization extremes and the width of relative spin conductance excess plateau could be significantly manipulated by the electrostatic potential strength and width, as well as its position relative to the FM stripes. These interesting features are believed useful for designing the electric voltage controlled spin filters. (C) 2008 Elsevier B.V. All rights reserved.

Electric-field switching of exciton spin splitting in coupled quantum dots

We investigate theoretically the spin splitting of the exciton states in semiconductor coupled quantum dots (CQDs) containing a single magnetic ion. We find that the spin splitting can be switched on/off in the CQDs via the sp-d exchange interaction using the electric field. An interesting bright-to-dark exciton transition can be found and it significantly affects the photoluminescence spectrum. This phenomenon is induced by the transition of the ground exciton state, arising from the hole mixing effect, between the bonding and antibonding states. (C) 2008 American Institute of Physics.

Highly anisotropic and electric field tunable Zeeman splittings in Mn-doped CdS nanowires

The electronic structure, Zeeman splitting, and g factor of Mn-doped CdS nanowires are studied using the k center dot p method and the mean field model. It is found that the Zeeman splittings of the hole ground states can be highly anisotropic, and so can their g factors. The hole ground states vary a lot with the radius. For thin wire, g(z) (g factor when B is along the z direction or the wire direction) is a little smaller than g(x). For thick wire, g(z) is mcuh larger than g(x) at small magnetic field, and the anisotropic factor g(z)/g(x) decreases as B increases. A small transverse electric field can change the Zeeman splitting dramatically, so tune the g(x) from nearly 0 to 70, in thick wire. The anisotropic factor decreases rapidly as the electric field increases. On the other hand, the Zeeman splittings of the electron ground states are always isotropic.