First charge collection and position-precision data on the medium-resistivity silicon strip detectors before and after neutron irradiation up to 2x10(14) n/cm(2)

Test strip detectors of 125 mu m, 500 mu m, and 1 mm pitches with about 1 cm(2) areas have been made on medium-resistivity silicon wafers (1.3 and 2.7 k Ohm cm). Detectors of 500 mu m pitch have been tested for charge collection and position precision before and after neutron irradiation (up to 2 x 10(14) n/cm(2)) using 820 and 1030 nm laser lights with different beam-spot sizes. It has been found that for a bias of 250 V a strip detector made of 1.3 k Ohm cm (300 mu m thick) can be fully depleted before and after an irradiation of 2 x 10(14) n/cm(2). For a 500 mu m pitch strip detector made of 2.7 k Ohm cm tested with an 1030 nm laser light with 200 mu m spot size, the position reconstruction error is about 14 mu m before irradiation, and 17 mu m after about 1.7 x 10(13) n/cm(2) irradiation. We demonstrated in this work that medium resistivity silicon strip detectors can work just as well as the traditional high-resistivity ones, but with higher radiation tolerance. We also tested charge sharing and position reconstruction using a 1030 nm wavelength (300 mu m absorption length in Si at RT) laser, which provides a simulation of MIP particles in high-physics experiments in terms of charge collection and position reconstruction, (C) 1999 Elsevier Science B.V. All rights reserved.

Molecular-beam epitaxial growth of position controlled InAs islands on cleaved edge of InGaAs/GaAs superlattice

A promising approach for positioning of InAs islands on (110)GaAs is demonstrated. By combining self-assembly of quantum dots with solid source molecular beam epitaxy (MBE) on cleaved edge of InGaAs/GaAs superlattice (SL), linear alignment of InAs islands on the InGaAs strain layers have been fabricated The cleaved edge of InGaAs/GaAs SL acts as strain nanopattern for InAs selective growth. Indium atoms incident on the surface will preferentially migrate to InGaAs regions where favorable bonding sites are available. The strain nanopattern's effect is studied by the different indium fraction and thickness of InxGa1-xAs/GaAs SL. The ordering of the InAs islands is found to depend on the properties of the underlying InGaAs strain layers.

Reflectance-difference spectroscopy study of the Fermi-level position of low-temperature-grown GaAs

The results of a reflectance-difference spectroscopy study of GaAs grown on (100) GaAs substrates by low-temperature molecular-beam epitaxy (LT-GaAs) are presented. In-plane optical anisotropy resonances which come from the linear electro-optic effect produced by the surface electric field are observed. The RDS line shape of the resonances clearly shows that the depletion region of LT-GaAs is indeed extremely narrow (much less than 200 Angstrom). The surface potential is obtained from the RDS resonance amplitude without the knowledge of space-charge density. The change of the surface potential with post-growth annealing temperatures reflects a complicated movement of the Fermi level in LT-GaAs. The Fermi level still moves for samples annealed at above 600 degrees C, instead of being pinned to the As precipitates. This behavior can be explained by the dynamic properties of defects in the annealing process.

First charge collection and position-precision data on the medium-resistivity silicon strip detectors before and after neutron irradiation up to 2x10(14) n/cm(2)

Test strip detectors of 125 mu m, 500 mu m, and 1 mm pitches with about 1 cm(2) areas have been made on medium-resistivity silicon wafers (1.3 and 2.7 k Ohm cm). Detectors of 500 mu m pitch have been tested for charge collection and position precision before and after neutron irradiation (up to 2 x 10(14) n/cm(2)) using 820 and 1030 nm laser lights with different beam-spot sizes. It has been found that for a bias of 250 V a strip detector made of 1.3 k Ohm cm (300 mu m thick) can be fully depleted before and after an irradiation of 2 x 10(14) n/cm(2). For a 500 mu m pitch strip detector made of 2.7 k Ohm cm tested with an 1030 nm laser light with 200 mu m spot size, the position reconstruction error is about 14 mu m before irradiation, and 17 mu m after about 1.7 x 10(13) n/cm(2) irradiation. We demonstrated in this work that medium resistivity silicon strip detectors can work just as well as the traditional high-resistivity ones, but with higher radiation tolerance. We also tested charge sharing and position reconstruction using a 1030 nm wavelength (300 mu m absorption length in Si at RT) laser, which provides a simulation of MIP particles in high-physics experiments in terms of charge collection and position reconstruction, (C) 1999 Elsevier Science B.V. All rights reserved.

Effects of Magnetohydrodynamic Interaction-Zone Position on Shock-Wave/Boundary-Layer Interaction

A third-order weighted essentially nonoscillatory and non-free-parameter difference scheme magnetohydrodynamic solver has been established to investigate the mechanisms of magnetohydrodynamics controlling separation induced by an oblique shock wave impinging on a flat plate. The effects of magnetohydrodynamic interaction-zone location on the separation point, reattachment point, separation-bubble size, and boundary-layer velocity profiles are analyzed. The results show that there exists a best location for the magnetohydrodynamic zone to be applied, where the separation point is delayed the farthest, and the separation bubble is decreased up to about 50% in size compared to the case without magnetohydrodynamic control, which demonstrated the promising of magnetohydrodynamics suppressing the separation induced by shock-wave/boundary-layer interactions.

A proposal design of a multi-hit two-dimensional position-sensitive energy spectrum detector

A new non-linear comparison method of charge-division readout scheme is conceived and the first design of a multi-hit two-dimensional position-sensitive energy spectrum Si(Au) surface barrier detector with a continuous sensitive area is proposed.

Restoration of the signals from multi-hit three-layer delay-line anode position-sensitive detector

Multi-hit 3-layer delay-line anode (Hexanode) has an increased ability to detect multi-hit events in a collision experiment. Coupled with a pair of micro-channel plates, it can provide position information of the particles even if the particles arrive at the same time or within small time dwell. But it suffers from some ambiguous outputs and signal losses due to timing order and triggering thresholds etc. We have developed a signal reconstruction program to correct those events. After the program correction, the dead time only exists when 2 paxticles arrive at the same time and the same position within a much smaller range. With the combination of Hexanode and the program, the experimental efficiencies will be greatly improved in near threshold double ionization on He collisions.

HIRFL-CSR电子冷却束流位置测量系统；A Beam Position Monitor System for Electron Cooler in HIRFL-CSR

高效率的电子冷却过程,要求电子束与离子束位置平行且重叠。为了同时测量电子束与离子束的位置,在HIRFL-CSR电子冷却装置上研发了以容性圆筒形极板为感应电极的束流位置探测系统。系统测量束流通过探针时产生的脉冲感应信号,并进行傅里叶变换得到频谱信号,分析4个不同电极上频谱信号强度获取束流的位置信息。测量结果表明,该束流位置探测系统测量准确,为定量研究储存环离子累积和电子冷却过程与两种束流相对位置及角度的依赖关系提供了条件。

64通道一维位置灵敏电流分布探测器及其数据获取系统；A 64-Channel Position Sensitive Current Distribution Detector with Data Acquisition System

针对高流强粒子束与绝缘毛细管相互作用的特点,设计制作了一套64通道一维位置灵敏电流分布探测器及其配套的数据获取系统,该探测器可分辨最小直径为1mm的束斑,通过数据获取系统可实现可视化自动数据采集。用2nA和200—2000eV电子对探测器进行了定标,并用10μA和2000eV的电子束穿越锥形毛细管后的出射电子,对探测器及数据获取系统进行测试,获得了出射粒子的位置分布谱及能量信息。

A TOF-PET prototype with position sensitive PMT readout

A prototype of time-of-flight positron emission computed tomography (TOF-PET) has been developed for acquiring the coincident detection of 511 keV gamma-rays produced from positron annihilation. It consists of two 80.5 mmx80.5 mm LYSO scintillator arrays (composed of 35 x35 pixel finger crystals) with the position sensitive photomultiplier tubes R2487 as the readout. Each array is composed of 2 mm x2 mm x 15 mm finger crystals and the average pixel pitch is 2.30 mm. The measured results indicate that the TOF information has the potential to significantly enhance the image quality by improving the noise variance in the image reconstruction. The best spatial resolution (FWHM) of the prototype for the pairs of 511 keV gamma-rays is 1.98 mm and 2.16 mm in the x and y directions, respectively, which are smaller than the average pixel pitch of 2.30 mm.