Effect of phase-transformation on mechanical-behavior of dual-phase steel plate

The mechanical behavior of dual phase steel plates is affected by internal stresses created during martensite transformation. Analytical modelling of this effect is made by considering a unit cell made of martensite inclusion in a ferrite matrix. A large strain finite element analysis is then performed to obtain the plane stress deformation state. Displayed numerically are the development of the plastic zone and distribution of local state of stress and strain. Studied also are the shape configuration of the martensite (hard-phase) that influences the interfacial condition as related to stress transmission and damage. Internal stresses are found to enhance the global flow stress after yield initiation in the ferrite matrix. Good agreement is obtained between the analytical results and experimental observations.

Quantum Efficiency And Temperature Coefficients Of Gainp/Gaas Dual-Junction Solar Cell

GaInP/GaAs dual-junction solar cell with a conversion efficiency of 25.2% has been fabricated using metalorganic chemical vapor deposition (MOCVD) technique. Quantum efficiencies of the solar cell were measured within a temperature range from 25 to 160A degrees C. The results indicate that the quantum efficiencies of the subcells increase slightly with the increasing temperature. And red-shift phenomena of absorption limit for all subcells are observed by increasing the cell's work temperature, which are consistent with the viewpoint of energy gap narrowing effect. The short-circuit current density temperature coefficients dJ (sc)/dT of GaInP subcell and GaAs subcell are determined to be 8.9 and 7.4 mu A/cm(2)/A degrees C from the quantum efficiency data, respectively. And the open-circuit cell voltage temperature coefficients dV (oc)/dT calculated based on a theoretical equation are -2.4 mV/A degrees C and -2.1 mV/A degrees C for GaInP subcell and GaAs subcell.

Some engineering issues of an FBG sensor with the dual gratings parallel matched interrogation method

The key issues of engineering application of the dual gratings parallel matched interrogation method are expanding the measurable range, improving the usability, and lowering the cost by adopting a compact and simple setup based on existing conditions and improving the precision of the data-processing scheme. A credible and effective data-processing scheme based on a novel divisional look-up table is proposed based on the advantages of other schemes. Any undetermined data is belonged to a certain section, which can be confirmed at first, then it can be looked up in the table to correspond to microstrain by the scheme. It not only solves inherent problems of the traditional one (double value and small measurable range) but also enhances the precision, which improves the performance of the system. From the experimental results, the measurable range of the system is 525 mu epsilon, and the precision is +/- 1 mu epsilon based on normal matched gratings. The system works in real time, which is competent for most engineering measurement requirements. (C) 2007 Elsevier GmbH. All rights reserved.

Mode properties of off-axis one-sided hybrid resonator for novel high average power dual-slab laser

A novel dual-slab laser with off-axis one-sided hybrid resonator is presented. The mode properties of the hybrid resonator are calculated using a fast Fourier transform method (FFT). The influence of wavefront distoration on the output beam quality is considered. Results indicate that the novel dual-slab laser is better than the normal dual-slab laser with off-axis one-sided hybrid resonator.

Modelling and simulation of the second-order Doppler error of a laser dual-frequency interferometer

Only the first- order Doppler frequency shift is considered in current laser dual- frequency interferometers; however; the second- order Doppler frequency shift should be considered when the measurement corner cube ( MCC) moves at high velocity or variable velocity because it can cause considerable error. The influence of the second- order Doppler frequency shift on interferometer error is studied in this paper, and a model of the second- order Doppler error is put forward. Moreover, the model has been simulated with both high velocity and variable velocity motion. The simulated results show that the second- order Doppler error is proportional to the velocity of the MCC when it moves with uniform motion and the measured displacement is certain. When the MCC moves with variable motion, the second- order Doppler error concerns not only velocity but also acceleration. When muzzle velocity is zero the second- order Doppler error caused by an acceleration of 0.6g can be up to 2.5 nm in 0.4 s, which is not negligible in nanometric measurement. Moreover, when the muzzle velocity is nonzero, the accelerated motion may result in a greater error and decelerated motion may result in a smaller error.

Isolation, expression and characterization of a novel dual serine protease inhibitor, OH-TCI, from king cobra venom

Snake venom Kunitz/BPTI members are good tools for understanding of structure-functional relationship between serine proteases and their inhibitors. A novel dual Kunitz/BPTI serine proteinase inhibitor named OH-TCI (trypsin- and chymotrypsin-dual inhibito

Quantum efficiency and temperature coefficients of GaInP/GaAs dual-junction solar cell

GaInP/GaAs dual-junction solar cell with a conversion efficiency of 25.2% has been fabricated using metalorganic chemical vapor deposition (MOCVD) technique. Quantum efficiencies of the solar cell were measured within a temperature range from 25 to 160A degrees C. The results indicate that the quantum efficiencies of the subcells increase slightly with the increasing temperature. And red-shift phenomena of absorption limit for all subcells are observed by increasing the cell's work temperature, which are consistent with the viewpoint of energy gap narrowing effect. The short-circuit current density temperature coefficients dJ (sc)/dT of GaInP subcell and GaAs subcell are determined to be 8.9 and 7.4 mu A/cm(2)/A degrees C from the quantum efficiency data, respectively. And the open-circuit cell voltage temperature coefficients dV (oc)/dT calculated based on a theoretical equation are -2.4 mV/A degrees C and -2.1 mV/A degrees C for GaInP subcell and GaAs subcell.

Properties of high k gate dielectric gadolinium oxide deposited on Si(100) by dual ion beam deposition (DIBD)

Gadolinium oxide thin films have been prepared on silicon (100) substrates with a low-energy dual ion-beam epitaxial technique. Substrate temperature was an important factor to affect the crystal structures and textures in an ion energy range of 100-500 eV. The films had a monoclinic Gd2O3 structure with preferred orientation ((4) over bar 02) at low substrate temperatures. When the substrate temperature was increased, the orientation turned to (202), and finally, the cubic structure appeared at the substrate temperature of 700 degreesC, which disagreed with the previous report because of the ion energy. The AES studies found that Gadolinium oxide shared Gd2O3 structures, although there were a lot of oxygen deficiencies in the films, and the XPS results confirmed this. AFM was also used to investigate the surface images of the samples. Finally, the electrical properties were presented. (C) 2004 Elsevier B.V. All rights reserved.

Experimental study of mode field evolution of dual-core photonic crystal fiber

The accurate mode field profile of high negative dispersion dual-core photonic crystal fiber (DCPCF) is measured. The mode field evolution of DCPCF with wavelength is studied experimentally for the first time. The measurement result shows that no individual inner core mode or outer core mode exists, but two modes coexist simultaneously, and either one of them is dominant. The mode field evolution versus wavelength indicates that the wavelength range where the modes coupling takes place between inner core and outer core is broader than that of theoretical design.

Design of Si-based Electro-optical modulator employed dual capacitors - art. no. 68381B

Electro-optical modulator with dual capacitors is designed and based on this design basic configuration of device is realized in laboratory. Exceeding GHz switching speed and high phase modulation efficiency can be expected with this device.

On the design and simulation of high speed electro-optic modulator based on SOI waveguide MOS dual capacitor structure

zhangdi于2010-03-29批量导入

A V-shaped module technique for promoting generation photocurrent density of silicon solar cells

A V-shaped solar cell module consists of two tilted mono-crystalline cells [J. Li, China Patent No. 200410007708.6 (March, 2004)]. The angle included between the two tilted cells is 90 degrees. The two cells were fabricated by using polished silicon wafers. The scheme of both-side polished wafers has been proposed to reduce optical loss. Compared to solar cells in a planar way, the V-shaped structure enhances external quantum efficiency and leads to an increase of 15% in generation photocurrent density. The following three kinds of trapped photons are suggested to contribute to the increase: (1) infrared photons converted from visible photons due to a transformation mechanism, (2) photons reflected from top contact metal, and (3) a residual reflection which can not be eliminated by an antireflection coating.