Thermal redistribution of localized excitons and its effect on the luminescence band in InGaN ternary alloys

Temperature-dependent photoluminescence measurements have been carried out in zinc-blende InGaN epilayers grown on GaAs substrates by metalorganic vapor-phase epitaxy. An anomalous temperature dependence of the peak position of the luminescence band was observed. Considering thermal activation and the transfer of excitons localized at different potential minima, we employed a model to explain the observed behavior. A good agreement between the theory and the experiment is achieved. At high temperatures, the model can be approximated to the band-tail-state emission model proposed by Eliseev et al. [Appl. Phys. Lett. 71, 569 (1997)]. (C) 2001 American Institute of Physics.

Homoepitaxial growth and characterization of 4H-SiC epilayers by low-pressure hot-wall chemical vapor deposition

Horizontal air-cooled low-pressure hot-wall CVD (LP-HWCVD) system is developed to get high quality 4H-SiC epilayers. Homoepitaxial growth of 4H-SiC on off-oriented Si-face (0001) 4H-SiC substrates purchased from Cree is performed at a typical temperature of 1500 degrees C with a pressure of 40 Torr by using SiH4+C2H4+H-2 gas system. The surface morphologies and structural and optical properties of 4H-SiC epilayers are characterized with Nomarski optical microscope, atomic force microscopy (AFM), x-ray diffraction, Raman scattering, and low temperature photoluminescence (LTPL). The background doping of 32 pm-thick sample has been reduced to 2-5 x 10(15) cm(-3). The FWHM of the rocking curve is 9-16 arcsec. Intentional N-doped and B-doped 4H-SiC epilayers are obtained by in-situ doping of NH3 and B2H6, respectively. Schottky barrier diodes with reverse blocking voltage of over 1000 V are achieved preliminarily.

Homoepitaxial growth of 4H-SiC multi-epilayers and its application to UV detection

Homoepitaxial growth of 4H-SiC p(+)/pi/n(-) multi-epilayer on n(+) substrate and in-situ doping of p(+) and pi-epilayer have been achieved in the LPCVD system with SiH4+C2H4+H-2. The surface morphologies, homogeneities and doping concentrations of the n(-)-single-epilayers and the p(+)/pi/n(-) multi-epilayers were investigated by Nomarski, AFM, Raman and SIMS, respectively. AFM and Raman investigation showed that both single- and,multi-epilayers have good surface morphologies and homogeneities, and the SIMS analyses indicated the boron concentration in p+ layer was at least 100 times higher than that in pi layer. The UV photodetectors fabricated on 4H-SiC p(+)/pi/n(-) multi-epilayers showed low dark current and high detectivity in the UV range.

Heavily doped polycrystalline 3C-SiC growth on SiO2/Si(100) substrates for resonator applications

3C-SiC is a promising material for the development of microelectromechanical systems (MEMS) applications in harsh environments. This paper presents the LPCVD growth of heavily nitrogen doped polycrystalline 3C-SiC films on Si wafers with 2.0 mu m-thick silicon dioxide (SiO2) films for resonator applications. The growth has been performed via chemical vapor deposition using SiH4 and C2H4 precursor gases with carrier gas of H-2 in a newly developed vertical CVD chamber. NH3 was used as n-type dopant. 3C-SiC films were characterized by scanning electron microscopy (SEM), x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), secondary ion mass spectroscopy (SIMS), and room temperature Hall Effect measurements. It was shown that there is no voids at the interface between 3C-SiC and SiO2. Undoped 3C-SiC films show n-type conduction with resisitivity, Hall mobility, and carrier concentration at room temperature of about 0.56 Omega center dot cm, 54 cm(2)/Vs, and 2.0x 10(17) cm(-3), respectively. The heavily nitrogen doped polycrystalline 3C-SiC with the resisitivity of less than 10(-3) Omega center dot cm was obtained by in-situ doping. Polycrystalline SiC resonators have been fabricated preliminarily on these heavily doped SiC films with thickness of about 2 mu m. Resonant frequency of 49.1 KHz was obtained under atmospheric pressure.

Micro-raman investigation of defects in a 4H-SiC homoepilayer

Three types of defects, namely defect I, defect 11, defect 111, in the 4H-SiC homoepilayer were investigated by micro-raman scattering measurement. These defects all originate from a certain core and are composed of (1) a wavy tail region, (11) two long tails, the so called comet and (111) three plaits. It was found that there are 3C-SiC inclusions in the cores of defect 11 and defect III and the shape of inclusion determines the type of defect II or defect III. If the core contains a triangle-shaped inclusion, the defect III would be formed; otherwise, the defect 11 was formed. No inclusion was observed in the core of the defect I. The mechanisms of these defects are discussed.

线粒体 DNA 相关疾病的系统发育学研究

线粒体是细胞内提供能量的细胞器，并负责调节细胞的程序化死亡。因遗传 缺陷引起的线粒体功能障碍会导致ATP 合成障碍、能量产生不足而出现一系列 病症。线粒体DNA 相关疾病目前日益受到广泛的关注，然而在线粒体DNA 相 关疾病领域常用的病例对照法容易受到遗传背景、群体分层、数据质量等方面因 素的影响以致经常得到假阳性结果。系统发育分析方法有助于解决这些方面的问 题，因此我们以此分析方法开展了如下工作： 首先我们对线粒体DNA C1494T 突变及其所属单倍型类群和氨基糖苷类药 物性耳聋之间的关联进行了研究。之前有研究报道了两个中国氨基糖苷类药物性 耳聋的家系，经过对先征者的线粒体DNA 全序列测定在这两个家系中都发现了 C1494T 突变。我们采用系统发育方法分析这两个家系先征者的全序列后，发现 这两个个体都属于线粒体单倍型A。巧合的是，在我们之前的研究中，在一个来 自武汉的汉族样本WH6980 中也有C1494T 突变，而且该个体同样也属于单倍型 类群A。这不由得使人想到：C1494T 突变可能是单倍型类群A 中一个分支的界 定位点，或者，受母系遗传背景的影响，该突变偏好于在A 类群中发生。那么 很有可能单倍型类群A对能够引发氨基糖苷类药物性耳聋的C1494T 突变的发生 有促进作用。 为了验证这个假设，我们从三个省份随机选取了553 个正常个体来检测 C1494T 突变，以调查该突变在普通人群中的发生频率。另外，我们从1823 个中 国人样本中筛选出属于单倍型类群A 的111 个体，在这111 个个体中检测C1494T 突变，以调查该突变是否为单倍型类群A 特有的变异位点。我们的结果表明： 在553 个随机样本群中没有检测到C1494T 突变，这说明该突变是一个稀有的突 变，在正常人群中发生的频率极低。另外，在111 个属于单倍型类群A 的样本 群中，我们也没有检测到C1494T 突变的存在，这说明该突变并非单倍型类群A 特有的变异位点。经过对带有C1494T 突变的全序列进行综合的系统发育学分析 表明，这三条序列的C1494T 突变应是来源于同一次突变事件。同时，根据序列 之间共享变异位点的状况推断，两个耳聋家系具有很近的母系亲缘关系，我们推 测这两个家系的C1494T 突变是来源于一位共同的近期母系祖先。综合这些结果 表明，C1494T 突变的发生与单倍型类群即母系遗传背景没有相关性，是属于在人群中频率极低的散发性突变。 我们又将系统发育分析的方法应用于肿瘤相关的线粒体DNA 突变的研究 中。线粒体在细胞的自由基产生以及细胞凋亡中扮演重要角色；有研究报道线粒 体功能的缺陷能导致癌症的发生，同时又有很多报道指出癌变组织的线粒体基因 组存在异常。为探讨癌组织中线粒体基因组的变异情况及其在癌症的发生和发展 中所扮演的角色，我们选取乳腺癌早期患者为研究对象。 近年来，有大量的研究都报导了在癌组织中存在高频率高密度的线粒体 DNA 体细胞突变，并认为这些突变在肿瘤发生过程中可能具有功能相关性。但 这些研究存在着不可回避的问题，总结来讲归为三个方面：①数据质量差：很多 前面报道的突变数据，经系统发育分析，发现存在不少因样本交叉污染所造成的 假阳性突变。②所测片断太短。大多数研究只是检测了D-loop 区，只占了整个 基因组的约十六分之一，很难全面反映问题。③对照设置有问题，许多研究进行 简单的case-control 分析，忽略了不同个体间母系遗传背景的差异，导致大量假 阳性突变的产生。 针对以上问题的存在，我们基于系统发育分析的方法在中国的乳腺癌病人中 开展了一项研究。分别取得10 例乳腺癌早期患者的癌组织、癌旁组织、以及远 端正常组织；提取了总DNA，对每一份组织样品进行线粒体全基因组测序。这 样做有两个研究目的：第一是调查在严格的质量控制手段下，排除交叉污染所造 成的假阳性突变后，在癌症病人中是否仍然能观察到高频率高密度的线粒体 DNA 体细胞突变。第二个目的是调查中国乳腺癌患者线粒体DNA 体细胞突变情 况，为乳腺癌早期诊断提供有效的信息。 为了避免过去部分研究中出现的问题，我们采取了相应的措施。首先是在严 格的质量控制下，我们对同一个病人的三种不同组织，即癌组织，癌旁组织，正 常组织中的线粒体基因组进行全序列测定的方式来检测体细胞突变。同时将所测 得线粒体全基因组序列进行系统发育的分析；结果表明属于同一个病人的不同组 织都能忠实的聚到一支，而且每一条全序列都完整的带有所属单倍型特有的界定 位点，不存在任何样本交叉或者污染的情况；这样进一步确证了我们数据的可靠 性。同时经过这样的比较，可以非常清晰的筛选出在某一种组织类型中所发生的 体细胞突变。来自10 例病人的癌组织，癌旁组织和正常组织的29 条（7#患者远端正常组 织没有得到）线粒体基因组全序列中，我们只检测到了两个体细胞突变（T2275C 和A8601G）。这两个突变经PCR 克隆试验的验证，在远端正常组织中均不存在， 是真实的体细胞突变。突变A8601G 同时出现在3#患者的癌组织和癌旁组织中； 提示线粒体DNA 的体细胞突变可能先于细胞的癌变，这可能对乳腺癌的早期临 床诊断具有一定的意义。突变T2275C 只出现在6#患者的癌组织中，该突变位于 16S rRNA 基因非常保守的位点上，我们对该突变位点潜在的生物学作用作了进 一步的讨论。 在我们研究的病例中体细胞突变的比率要远远低于先前的报道；造成差异的 主要原因可能是因为我们采取了严格的质量控制手段。综合我们的研究结果表 明，先前所报道的乳腺癌组织中的线粒体基因体细胞突变的频率存在被高估的现 象。目前线粒体突变与肿瘤发生的关系还有待于更深入的研究，同时我们呼吁本 领域的研究要加强数据质量的可靠性。我们的研究表明，系统发育的分析方法在 线粒体DNA 相关疾病的研究中是有效的，因此我们推荐在线粒体DNA 相关疾 病的研究中进行推广。

南海北部白云深水区之基础地质

白云深水区具有复杂而特殊的地质条件：位于中生代俯冲带的构造软弱带、新

离子注入GaAs实现双包层掺镱光纤激光器被动调Q锁模

用离子注入的半绝缘GaAs晶片作为吸收体和输出镜,在双包层掺镱光纤激光器上实现了调Q锁模.离子注入的能量为400keV的As+离子,注入剂量为1016/cm2,然后在600℃下退火20min.当抽运功率为5W时,脉冲平均输出功率为200mW,调Q包络重复频率为50kHz,半高宽为4μs,锁模脉冲重复频率为15MHz。

Optimization of evanescent wave imaging for the visualization of protein adsorption layers

We have optimized the settings of evanescent wave imaging for the visualization of a protein adsorption layer. The enhancement of the evanescent wave at the interface brought by the incident angle, the polarized state of light beam as well as a gold layer is considered. In order to improve the image contrast of a protein monolayer in experiments, we have optimized three factors-the incident angle, the polarization of light beam, and the thickness of an introduced thin gold layer with a theoretical simulation.