Micropatterning of polymeric semiconductor by selective lift-off method using epoxy mold

A simple and efficient method for patterning polymeric semiconductors for applications in the field of organic electronics is proposed. The entire polymer layer, except for the desired pattern, is selectively lifted off from a flat poly(dimethylsiloxane) (PDMS) stamp surface by an epoxy mold with a relief pattern. This is advantageous because the elastic deformation of the PDMS stamp around protrusions of a patterned stamp under pressure can assist the plastic deformation of a polymer film along the pattern edges, yielding large area and high quality patterns, and the PDMS surface has low surface energy, which allows the easy removal of the polymer film.

Efficient top-emitting organic light-emitting diodes with a V2O5 modified silver anode

We fabricated efficient top-emitting organic light-emitting diodes (OLEDs) with silver (Ag) as an anode and samarium (Sm) as a semi-transparent cathode. The hole-injection barrier at the Ag anode/hole transporter interface is reduced by inserting a buffer layer of vanadium oxide (V2O5) between them. The ultraviolet photoelectron spectroscopy analysis shows that the hole-injection barrier is reduced by 0.5 eV. Both the V2O5 thickness and the organic layer thickness are optimized. The optimized device achieves a maximum current efficiency of 5.46 cd A(-1) and a power efficiency of 3.90 lm W-1, respectively.

Electrical properties in vanadyl-phthalocyanine-based metal-insulator-semiconductor devices

We investigated electrical properties of vanadyl phthalocyanine (VOPc) metal-insulator-semiconductor (MIS) devices by the measurement of capacitance and conductance, which were fabricated on ordered para-sexiphenyl (p-6P) layer by weak epitaxy growth method. The VOPc/p-6P MIS diodes showed a negligible hysteresis effect at a gate voltage of +/- 20 V and small hysteresis effect at a gate voltage of +/- 40 V due to the low interface trap state density of about 1x10(10) eV(-1) cm(-2). Furthermore, a high transition frequency of about 10 kHz was also observed under their accumulation mode. The results indicated that VOPc was a promising material and was suitable to be applied in active matrix liquid crystal displays and organic logic circuits.

Near infrared light-emitting diodes based on composites of near infrared dye, CdSe/CdS quantum dots and polymer

Near infrared (NIR) light emitting diodes employing composites of an IR fluorescent dye, CdSe/CdScore/shell semiconductor quantum dots and poly( N-vinylcarbazole) (PVK) have been demonstrated. The device, with a configuration of indium-tin-oxide (ITO)//PEDOT:PSS//PVK:NIR Dye:CdSe/CdS//Al, had a turn-on voltage of 7 V, emitted the NIR light with a maximum at 890 nm and the irradiance intensity of 96 mu W. The electroluminescence efficiency of 0.02% was achieved at a current density of 13 mA cm(-2).

Reduced ambient reflection of organic light-emitting diodes by utilizing multilayer low-reflection cathodes

Ambient reflection of organic light-emitting diodes (OLEDs) is reduced by utilizing a multilayer low-reflection cathode. The low-reflection cathode structure consists of a semitransparent cathode layer, a transparent spacing layer and a high reflective layer. Metals with different optical properties, including silver (Ag) and samarium (Sm), are used as the semitransparent cathode layer, tris(8-quinolinolato) aluminium (Alq(3)) and aluminium (Al) are used as the spacing layer and high reflective layer, respectively. The incident ambient light could be reduced by the cathode structure via destructive optical interference. It is found that the Ag/Alq(3)/Al cathode shows a strong wavelength-dependent reflection. However, the Sm/Alq(3)/Al cathode demonstrates a low reflection in the whole visible range, and the resulting OLED shows a reduced luminous reflectance of 2.7% as compared to 81% for a control device with LiF/Al cathode. A further reduction to 0.9% is realized by replacing a multilayer of Alq(3)/Sm/Alq(3) for the single layer of Alq(3).

Room-temperature ferromagnetic semiconductor MnxGa1-xSb

Ferromagnetic semiconductor MnxGa1-xSb single crystals were fabricated by Mn-ions implantation, deposition, and the post annealing. Magnetic hysteresis-loops in the MnxGa1-xSb single crystals were obtained at room temperature (300 K). The structure of the ferromagnetic semiconductor MnxGa1-xSb single crystal was analyzed by Xray diffraction. The distribution of carrier concentrations in MnxGa1-xSb was investigated by electrochemical capacitance- voltage profiler. The content of Mn in MnxGa1-xSb varied gradually from x = 0.09 near the surface to x = 0 in the wafer inner analyzed by X-ray diffraction. Electrochemical capacitance-voltage profiler reveals that the concentration of p-type carriers in MnxGa1-xSb is as high as 1 1021 cm-3, indicating that most of the Mn atoms in MnxGa1-xSb take the site of Ga, and play a role of acceptors.

The magnetic and structure properties of room-temperature ferromagnetic semiconductor (Ga,Mn)N

Diluted magnetic semiconductor (Ga,Mn)N were prepared by the implantation of Mn ions into GaN/Al2O3 substrate. Clear X-ray diffraction peak from (Ga,Mn)N is observed. It indicates that the solid solution (Ga,Mn)N phase was formed with the same lattice structure as GaN and different lattice constant. Magnetic hysteresis-loops of the (Ga,Mn)N were obtained at room temperature (293 K) with the coercivity of about 2496.97 A m(-1). (C) 2003 Elsevier B.V. All rights reserved.

Polaronic correction to the first excited electronic energy level in an anisotropic semiconductor quantum dot

Within the framework of second-order Rayleigh-Schrodinger perturbation theory, the polaronic correction to the first excited state energy of an electron in an quantum dot with anisotropic parabolic confinements is presented. Compared with isotropic confinements, anisotropic confinements will make the degeneracy of the excited states to be totally or partly lifted. On the basis of a three-dimensional Frohlich's Hamiltonian with anisotropic confinements, the first excited state properties in two-dimensional quantum dots as well as quantum wells and wires can also be easily obtained by taking special limits. Calculations show that the first excited polaronic effect can be considerable in small quantum dots.

Linear chirp control of infrared signal in a biased semiconductor thin film

Ultrashort light-matter interactions between a linear chirped pulse and a biased semiconductor thin film GaAs are investigated. Using different chirped pulses, the dependence of infrared spectra on chirp rate is demonstrated for a 5 fs pulse. It is found that the infrared spectra can be controlled by the linear chirp of the pulse. Furthermore, the infrared spectral intensity could be enhanced by two orders of magnitude via appropriately choosing values of the linear chirp rates. Our results suggest a possible scheme to control the infrared signal.

The local-field corrective effect on Rabi oscillation of ultrashort pulse excitation in semiconductor GaAs

Rabi oscillation of the thin bulk semiconductor GaAs, which takes into account the effect of the local-field correction induced by the interacting excitons, is investigated by numerically solving the semiconductor Bloch equations. It is found, for a 2 pi few-cycle pulse excitation, that two incomplete Rabi-floppings emerge due to the competition between the Rabi frequency of the incident pulse and the internal-field matrices. Furthermore, for a sub-cycle 2 pi pulse excitation a complete Rabi-flopping can occur because of the absolute phase effect. We ascribe these characteristics of the Rabi oscillation to the renormalized Rabi frequency.

Third harmonic enhancement due to Fano interference in semiconductor quantum well

We investigate the emission spectra of the semiconductor quantum well for few-cycle and sub-cycle pulse exciting. We find that Fano interference may induce third harmonic enhancement. Third harmonic enhancement varies with the magnitude and duration of the incident pulse, and may be enhanced by approximately one order of magnitude for the low intensity region of the sub-cycle incident pulse exciting.

The origin of the transverse relaxation time in optically excited semiconductor quantum wells

The origin of the transverse relaxation time in optically excited semiconductor quantum wells is investigated based on the vector property of the interband transition matrix elements. The dephasing rate due to carrier-carrier (CC) scattering is found to be equal to half of the common momentum relaxation rate. The analytical expression of the polarization dephasing due to CC scattering in two-dimension is established and the dependence of the dephasing rate Gamma(cc) on the carrier density N is determined to be Gamma(cc) = constant (.) N-1/2, which is used to explain the experimental results and provides a promising physical picture. (C) 2004 Elsevier B.V. All rights reserved.

Designing a coupler for the intersatellite optical communication system

Coupling a single-mode laser diode with 200 mW to a single-mode fiber (SMF) through an orthonormal aspherical cylindrical lens and a GRIN lens for the intersatellite optical communication system is proposed and demonstrated. We experimentally studied how the coupling efficiency changes with the SMF's position displacement and axial angle variation, and obtained 80 mW output power at the end of the SMF, which shows that the coupling units have satisfied the designed request. (c) 2007 Elsevier GmbH. All rights reserved.

Theoretical model for a periodically driven semiconductor laser subject to optical feedback from a microcantilever

We propose a theoretical model for analyzing the dynamics of a periodically driven semiconductor laser subject to optical feedback from a microcantilever. We numerically investigate the temporal evolution of the light intensity of the semiconductor laser, and we show the interspikes of the light intensity. These interspikes of light intensity are also demonstrated in our experiment. The validity of the theoretical model is verified. The observed phenomenon has a potential application for resonant sensing. (C) 2008 Optical Society of America.

Instabilities in a grating feedback external cavity semiconductor laser

Output power fluctuations in a grating external cavity diode laser with Littman configuration are described, showing peculiar chaotic behaviors of self-pulsation at the L-I curve kink points. Different spectral characteristics with multiple peaks are observed at upper and lower state of the self-pulsation. It is found also that P-N junction voltage jumps in a same pace with the pulsation. The observed phenomena reflect competition between different longitudinal modes, and transient variation of transverse modes in addition. These experimental results may contain information about the mechanisms of the chaotic instability in strong filtered feedback semiconductor lasers. (C) 2008 Optical Society of America