Bulk crystal growth and efficient diode-pumped laser performance of Yb 3+:Sc2SiO5

A bulk crystal of Yb:Sc2SiO5 (Yb:SSO) with favorable thermal properties was successfully obtained by the Czochralski method. The energy level diagrams for Yb:SSO crystal were determined by optical spectroscopic analysis and semi-empirical crystal-field calculations using the simple overlap model. The full width at half maximum of the absorption band centering at 976 nm was calculated to be 24 nm with a peak absorption cross-section of 9.2x10(-21) cm(2). The largest ground-state splitting of Yb3+ ions is up to 1027 cm(-1) in a SSO crystal host. Efficient diode-pumped laser performance of Yb:SSO was primarily demonstrated with a slope efficiency of 45% and output power of 3.55 W.

Crystal growth, spectroscopic characterization, and laser performance of Tm:LiLuF4 crystal

The National Science Foundation of China(Grant No. 60578044).

Effects and numerical analysis of argon gas flow on the oxygen concentration in Czochralski silicon single crystal growth

Argon gas, as a protective environment and carrier of latent heat, has an important effect on the temperature distribution in crystals and melts. Numeric simulation is a potent tool for solving engineering problems. In this paper, the relationship between argon gas flow and oxygen concentration in silicon crystals was studied systematically. A flowing stream of argon gas is described by numeric simulation for the first time. Therefore, the results of experiments can be explained, and the optimum argon flow with the lowest oxygen concentration can be achieved. (C) 2002 Elsevier Science B.V. All rights reserved.

PHYSICAL VAPOR TRANSPORT AND CRYSTAL-GROWTH OF GESEXTE1-X SOLID-SOLUTIONS

Physical vapor transport studies of GeSe(x)Te1 - x (x = 0.1, 0.2, 0.3, and 0.4) solid solutions demonstrated, that individual, large single crystals of these materials can be grown in closed ampoules. A compositional analysis of the grown crystals revealed, that the mass transport (crystal growth) process under steady-state conditions is pseudo-congruent and controlled by diffusion processes in the source material. From these experiments, the degree of non-stoichiometry (Ge-vacancy concentrations) of GeSe(x)Te1 - x single crystals could be estimated. The effects of the cubic to rhombohedral phase transformation during cooling on the microstructure and morphology of the grown mixed crystals are observed. This work provides the basis for subsequent defect studies and electrical measurements on these crystals.

Effects and numerical analysis of argon gas flow on the oxygen concentration in Czochralski silicon single crystal growth

Argon gas, as a protective environment and carrier of latent heat, has an important effect on the temperature distribution in crystals and melts. Numeric simulation is a potent tool for solving engineering problems. In this paper, the relationship between argon gas flow and oxygen concentration in silicon crystals was studied systematically. A flowing stream of argon gas is described by numeric simulation for the first time. Therefore, the results of experiments can be explained, and the optimum argon flow with the lowest oxygen concentration can be achieved. (C) 2002 Elsevier Science B.V. All rights reserved.

Effects of crystal growth conditions on morphology of crystalline syndiotactic 1,2-polybutadiene

The crystalline syndiotatic 1,2-polybutadiene was synthesized with a catalyst consisting of iron acetylacetonate (Fe(acac)(3))-triisobutylaluminum (Al(i-Bu)(3))-diethyl phosphite (DEP), and the effects of crystal growth conditions on morphology of thin films of the polymer were investigated by transmission electron microscopy (TEM) and electron diffraction (ED) techniques. The polymer with melting point 179 degreesC was found to have 89.3% 1,2-content and 86.5% syndiotacticity by C-13 NMR measurement. The results of electron microscopic studies indicate that the solution-cast thin films of the syndiotatic 1,2-polybutadiene consist of lath-like lamellae with the c-axis perpendicular to the film plane, while a- and b-axes are in the film plane. The morphology of isothermally crystallized thin films of the polymer is temperature dependent. At lower crystallization temperatures (130 degreesC), a spherulitic structure consisting of flat-on lamellae is formed. With an increase in the crystallization temperature (e.g., at 140 degreesC), the spherulites and single faceted crystals coexist. At higher crystallization temperatures (150 degreesC), single crystals with a hexagonal prismatic shape are produced.

Crystal growth and structural analysis of PrMnO3 and TbMnO3

Single crystals of PrMnO3 and TbMnO3 were grown by floating zone method and the crystal structure was determined by single crystal X-ray diffractometry. The structure of these compounds belongs to the orthorhombic system (space group is Pnma, No. 62) with the lattice parameters alpha approximate to root (.) - a(p), b approximate to 2 (.) a(p) , c approximate to root 2.a(p) and Z = 4, where a(p) is ideal cubic perovskite cell parameter.

Studies on the morphology transition of micro-crystal growth in polymer films in high vacuum and strong electrostatic field

The morphology of films of isotactic polypropylene poly (3-dodecylthiophene) and iPP/P3DDT blend formed in electrostatic fields has been investigated by using scanning electron microscope. The experiment results show that the micro-crystal morphology of polymer films was strongly dependent on electrostatic fields. It was found that the effect of the electrostatic field led to the formation of dendrite crystals aligned in the field direction, and some branches of P3DDT ruptured. However, the micro-crystals in these films grew into spherulites without electrostatic field,and have no crystal orientation.