Recent progresses of Si-based photonics in chinese main land

Si-based photonic materials and devices, including SiGe/Si quantum structures, SOI and InGaAs bonded on Si, PL of Si nanocrystals, SOI photonic crystal filter, Si based RCE (Resonant Cavity Enhanced) photodiodes, SOI TO (thermai-optical) switch matrix were investigated in Institute of Serniconductors, Chinese Academy of Sciences. The main results in recent years are presented in the paper. The mechanism of PL from Si NCs embedded in SiO2 matrix was studied, a greater contribution of the interface state recombination (PL peak in 850 similar to 900 nm) is associated with larger Si NCs and higher interface state density. Ge dots with density of order of 10(11) cm(-2) were obtained by UHV/CVD growth and 193 nm excimer laser annealing. SOI photonic crystal filter with resonant wavelength of 1598 nm and Q factor of 1140 was designed and made. Si based hybrid InGaAs RCE PD with eta of 34.4% and FWHM of 27 nut were achieved by MOCVD growth and bonding technology between InGaAs epitaxial and Si wafers. A 16x16 SOI optical switch matrix were designed and made. A new current driving circuit was used to improve the response speed of a 4x4 SOI rearrangeable nonblocking TO switch matrix, rising and failing time is 970 and 750 ns, respectively.

基于量化权限的门限访问控制方案

研究了在引入量化权限观点后从访问控制角度实现秘密保护的问题.元权限是从哲学上"质"和"量"的角度认识传统意义上的权限所探究出的新概念,较以往访问控制中认识和使用权限而言,它全面而深入地反映了权限这一概念的本质.进一步结合门限思想和基于角色的访问控制机制所提出的基于量化权限的门限访问控制方案,从访问控制的角度研究了秘密保护问题.在秘密保护方面,基于量化权限的门限访问控制方案具有一些独特的优点,比如分发给参与者的秘密分片和要保护的秘密无知识上的联系、可以反映出参与者信任度的差异以及运算量低.

谓词μ演算和模态图的语义一致性

模态图是谓词μ演算的一种有效的图形表示形式。证明了谓词μ演算和模态图的语义一致性，详细讨论了谓词μ演算公式、嵌套谓词等式系和模态图之间的关系，并给出了一种优化的从线性公式到嵌套谓词等式系的转换算法。

一个特殊的安全双方计算协议

安全多方计算是近几年国际密码学界研究的一个热点问题。基于Φ-隐藏假设及同态公钥加密体制的语义安全性假设,给出了一个特殊的安全双方计算协议--保密比较协议,该协议同时确保公平性、安全性、有效性和顽健性,并使用安全多方计算对安全性的严格定义,对协议的正确性与安全性进行了证明。与先前工作相比,本文的方案更富有公平性、有效性和安全性。该文在网上投标、拍卖、电子选举等领域中有着广阔的应用前景。

一种基于PDCA的软件过程控制与改进模型

CMM/CMMI(capabilitymaturitymodel/CMMintegration)自1999年开始为中国软件企业所接受并逐步得以推广,但目前中国实施CMM/CMMI的企业还不多,有些企业实施效果并不理想.通过调查软件企业在实施CMM/CMMI过程中存在的问题,并对发现的问题及其负面影响进行分析,提出了基于PDCA(plan-do-check-action)的软件过程控制与改进模型,开发了SoftPM软件质量管理平台.该平台的广泛应用表明,该模型对提高CMM/CMMI的企业软件过程的效率和改善实施效果很有帮助.

Photochromic fulgide for holographic recording

(N-4'-methoxy-2-methyl-5-phenyl)-3-pyrryl-ethylidene (isopropylidene) succinic anhydride fulgide, doped in PMMA matrix, exhibits photochromic behavior. The fatigue resistance experiment shows no photodegradation is detected after more than 450 writing-erasing cycles. Study of fulgide material for holographic recording media shows the optimal exposure and the diffraction efficiency is 1047 mJ/cm(2) and 2.26%, respectively, with 10 mum thickness polymer film. Holographic grating with 1680 lines/mm at writing angle theta = 30degrees is also obtained. (C) 2004 Elsevier B.V. All rights reserved.

Microscopic analysis of defects in a high resistivity silicon detector irradiated to 1.7x10(15)n/cm(2)

Current-based microscopic defect analysis methods with optical filling techniques, namely current deep level transient spectroscopy (I-DLTS) and thermally stimulated current (TSC), have been used to study defect levels in a high resistivity silicon detector (p(+)-n-n(+)) induced by very high fluence neutron (VHFN) irradiation (1.7x10(15) n/cm(2)). As many as fourteen deep levels have been detected by I-DLTS. Arrhenius plots of the I-DLTS data have shown defects with energy levels ranging from 0.03 eV to 0.5 eV in the energy band gap. Defect concentrations of relatively shallow levels (E(t) < 0.33 eV) are in the order of 10(13)cm(-3), while those for relatively deep levels (E(t) > 0.33 eV) are in the order of 10(14) cm(-3). TSC data have shown similar defect spectra. A full depletion voltage of about 27,000 volts has been estimated by C-V measurements for the as-irradiated detector, which corresponds to an effective space charge density (N-eff) in the order of 2x10(14) cm(-3). Both detector leakage current and full depletion voltage have been observed to increase with elevated temperature annealing (ETA). The increase of the full depletion voltage corresponds to the increase of some deep levels, especially the 0.39 eV level. Results of positron annihilation spectroscopy have shown a decrease of total concentration of vacancy related defects including vacancy clusters with ETA, suggesting the breaking up of vacancy clusters as possible source of vacancies for the formation of single defects during the reverse anneal.

脊形结构GaN蓝光激光器的热模拟分析

利用二维热传导模型分析了GaN激光器的温度特性.计算了有源区在连续工作条件下的最大温升,分析了激光器工作时的功率密度和p电极比接触电阻率等参数对温度特性的影响.模拟结果表明,采用不同衬底和不同装配形式对器件温度特性的影响很大,正装形式下,窄的脊形条宽能提高器件的高温工作稳定性.

Passively Mode Locked Diode-End-Pumped Nd∶YAG Laser with In0.25 Ga0.75 As as Output Coupler

A novel InGaAs(LT-In0.25 Ga0.75 As) absorber grown by metal organic chemical vapor deposition at low temperature is presented.Using it as well as an output coupler,passive mode locking,which produces pulses as short as several hundred picoseconds for diode-end-pumped Nd∶YAG laser at 1.06μm,is realized.The pulse frequency is 150MHz.