Pressure-induced phase transition of nanocrystalline zinc sulfide

In situ energy dispersive X-ray diffraction measurements on nanocrystalline zinc sulfide have been performed by using diamond anvil cell with synchrotron radiation. There is a phase transition which the ultimate structure is rocksalt when the pressure is up to 16.0GPa. Comparing the structure of body materials, the pressure of the phase transition of nano zinc sulfide is high. We fit the: Birch-Murnaghan equation of state and obtained its ambient pressure bulk modulus and its pressure derivative. The bulk modulus of nanocrystalline zinc sulfide is higher than that of body materials, it indicate that the rigidity of nanocrystalline zinc sulfide is high.

Effects of residual C and O impurities on photoluminescence in undoped GaN epilayers

Photoluminescence (PL) was investigated in undoped GaN from 4.8 K to room temperature. The 4.8 K spectra exhibited recombinations of free exciton, donor-acceptor pair (DAP), blue and yellow bands (Ybs). The blue band (BB) was also identified to be a DAP recombination. The YB was assigned to a recombination from deep levels. The energy-dispersive X-ray spectroscopy show that C and O are the main residual impurities in undoped GaN and that C concentration is lower in the epilayers with the stronger BB. The electronic structures of native defects, C and O impurities, and their complexes were calculated using ab initio local-density-functional (LDF) methods with linear muffin-tin-orbital and 72-atomic supercell. The theoretical analyses suggest that the electron transitions from O-N states to C-N and to V-Ga states are responsible for DAP and the BB, respectively, and the electron transitions between the inner levels of the C-N-O-N complex may be responsible for the YB in our samples. (C) 2002 Elsevier Science B.V. All rights reserved.

InxGa1-xAs/AlyGa1-yAs/AlzGa1-zAs asymmetric step quantum-well middle wavelength infrared detectors

InxGa1-xAs/AlyGa1-yAs/AlzGa1-zAs asymmetric step quantum-well middle wavelength (3-5 mum) infrared detectors are fabricated. The components display photovoltaic-type photocurrent response as well as the bias-controlled modulation of the peak wavelength of the main response, which is ascribed to the Stark shifts of the intersubband transitions from the local ground states to the extended first excited states in the quantum wells, at the 3-5.3 mum infrared atmospheric transmission window. The blackbody detectivity (D-bb*) of the detectors reaches to about 1.0x10(10) cm Hz(1/2)/W at 77 K under bias of +/-7 V. By expanding the electron wave function in terms of normalized plane wave basis within the framework of the effective-mass envelope-function theory, the linear Stark effects of the intersubband transitions between the ground and first excited states in the asymmetric step well are calculated. The obtained results agree well with the corresponding experimental measurements. (C) 2001 American Institute of Physics.

Disentangling mechanical and mass effects on nanomechanical resonators

Micro and nanomechanical resonators are powerful and label-free sensors of analytes in various environments. Their response, however, is a convolution of mass, rigidity, and nanoscale heterogeneity of adsorbates. Here we demonstrate a procedure to disentangle this complex sensor response, to simultaneously measure both mass and elastic properties of nanometer thick samples. This turns an apparent disadvantage of these resonators into a striking and unique asset, enabling them to measure more than mass alone.

Au(111)自组装膜表面原子力显微镜纳米刻蚀

在Au(111)硫醇自组装膜上通过原子力显微镜（AFM）纳米刻蚀加工了各种功能化纳米结构。本论文取得的主要成果如下： 1. “蘸笔”技术移除自组装膜及金基底 以烯丙基溴为墨水，用蘸笔技术在16－巯基十六羧酸（MHA）修饰的Au(111)基底上可以实现对金基底的直接加工，形成阴刻图案；并提出了详细的加工机理。 2. Au(111)自组膜表面的可逆加工 （1）利用乙醇修饰的导电AFM针尖通过电致刻蚀在Au(111)基底的烷基硫醇自组装膜上实现了阴阳刻图案的可逆加工。X射线光电子能谱分析表明阳刻图案的化学组成为氧化金，且此氧化金可被乙醇还原生成金得到阴刻图案。此阴刻图案可用作纳米模板，我们利用此模板加工了氧化铁磁性纳米结构和溶菌酶蛋白质纳米结构。 （2）用修饰硫醇的导电AFM针尖在Au(111)基底上实现了硫醇的可逆书写。 3. Au(111)自组膜表面官能团转化 用硫醇自组装膜修饰的Pt针在Au(111)基底的烷基硫醇自组装膜上实现了表面端基官能团转化。所得亲水性纳米图案可用作物理（如直接吸附纳米粒子）和化学纳米模板（如诱导硅烷自组装）。加工过程中基底自组装膜保持完整，未破坏Au-S键。 4. AFM研究适配子与血小板衍生生长因子－BB的相互作用 利用AFM电致刻蚀在HS-(CH2)12-(OCH2CH2)4-OH（EG4）/Au(111)上选择性移除EG4，在新暴露的金基底上生长血小板衍生生长因子－BB（PDGF-BB）适配子与EG4的混合自组装膜，通过PDGF-BB适配子与 PDGF-BB的特异性键合固定PDGF-BB，得到PDGF-BB的纳米图案。

高性能树脂环状预聚体和含官能团芳香环状低聚物的合成与表征

芳香环状低聚物的合成是应现代航天、航空、电子、机械等高技术领域对先进复合材料的需求而在八十年代末期发展起来的研究领域，其特有的结构和性能决定了芳香环状低聚物的广泛应用前景。芳香环状低聚物不仅在开环聚合制备先进树脂基复合材料方面具有重要的应用价值，而且在其侧链上引入各种官能团，开展其在功能材料方面的研究也具有十分重要的意义。本文以开拓这类新型芳香大环化合物的应用为目的，“假高稀”条件下，合成了22种新型结构的芳香大环化合物，并对它们进行了精确的结构表征。本文从开环聚合制备高性能树脂的思想出发，以6氟双酚A为单体合成了一系列的含氟聚芳醚环状预聚体，环状低聚物的产率达到74%，并在1 wt%的联苯二酚钾的引发下，进行快速地熔融开环聚合，得到了重均分子量约为6万，分子量分布约为2.6的线性含氟聚芳醚；本文设计了酮亚胺路线合成得到了聚醚醚酮(PEEK)环状预聚体。开创了由AA，BB型单体一步法合成PEEK环状中间体的新方法，这种合成方法具有反应时间短，所得环状低聚物的环尺寸较小，环张力较大，易于进行开环聚合的特点。PEEK环状预聚体成功地进行了阴离子开环聚合得到高分子量的线性聚合物，这一新方法的开拓将把PEEK在先进复合材料领域的实际应用向前推进一步。建立了一套先进的分析芳香环状低聚物的方法，结合质谱、核磁、GPC、单晶X．射线衍射和DSC等手段表征了各种环状低聚物并揭示了环状低聚物的组成。本文着重研究了激光质谱(MALDI-TOF MS)和电喷雾质谱(ESI MS)在芳香环状低聚物分析中的应用，特别在基质的选择上，经对比研究表明1,8,9-葸三酚是分析芳香环状低聚物的最为有效的基质，并已广泛地应用在我们的研究工作中，同时还发现了一种适用于芳香环状聚酯分析的新型基质，α-氰基-4-羟基肉桂酸。用软硬酸碱理论解释了芳香环状低聚物与不同阳离子的亲合选择性。本文首次运用电喷雾质谱来分析芳香环状低聚物，证明电喷雾质谱与激光质谱有明显的互补性，是继激光质谱之后新发现的表征芳香大环化合物的有效手段，特别适用于含极性基团的芳香大环化合物的表征，进一步完善了芳香大环化合物的表征体系。自从美国G.E.公司利用环状聚碳酸酯的开环聚合制备线性聚碳酸酯以来，大多数芳香环状低聚物的开环聚合是经阴离子途径进行的，聚合后部分引发剂的端基残存于聚合产物中，常用的阴离子引发剂含有无机盐和酚氧碱金属离子，这些基团的存在将对聚合物的加工和性能带来一定的影响，因而探索其它的开环聚合途径具有重要意义。本文在“假高稀”条件下，高选择性地合成CSA、CSK和CSS三种含硫醚键的芳香环状低聚物，通过四圆衍射首次对含硫醚键芳香环状二聚体的晶体结构进行了研究，结果表明这些含硫醚键的芳香环状低聚物为缺乏环张力的大环。自由基聚合反应是重要的聚合方法之一，本文通过CSA和CSK环状低聚物的开环聚合深入、细致地研究了通过硫醚交换反应进行的自由基开环聚合，并利用顺磁共振波谱证实了其自由基开环聚合的性质。本文合成了一系列含溴、硝基、羧基及磺酸钠基团的芳香环状低聚物，以期开拓非开环聚合用的芳香大环化合物的研究领域。另外在芳香环状聚醚的合成新方法上做出了创新性的工作，首次通过界面缩聚方法高产率地合成了含硝基的芳香环状聚醚砜，并对芳香大环化合物的化学反应，修饰改性及功能化研究进行了探索。

GaAs基短周期InAs/GaSb超晶格红外探测器研究

采用分子束外延(MBE)方法,在(001)GaAs衬底上生长了短周期Ⅱ型超晶格(SLs):InAs/GaSb (2ML/8ML)和InAs/GaSb (8ML/8ML).从X射线衍射(HRXRD)中计算出超晶格周期分别为31.2(A)和57.3(A).室温红外透射光谱表明两种超晶格结构在短波2.1μm和中波5μm处有明显吸收.通过腐蚀、光刻和欧姆接触,制备了短波和中波的单元光导探测器.在室温和低温下进行光谱响应测试和黑体测试,77K下,50%截止波长分别为2.1μm和5.0μm,黑体探测率D~·_(bb)均超过2×10~8cmHz~(1/2)/W.室温下短波探测器D~·_(bb)超过10~8cmHz~(1/2)/W.

Effects of residual C and O impurities on photoluminescence in undoped GaN epilayers

Photoluminescence (PL) was investigated in undoped GaN from 4.8 K to room temperature. The 4.8 K spectra exhibited recombinations of free exciton, donor-acceptor pair (DAP), blue and yellow bands (Ybs). The blue band (BB) was also identified to be a DAP recombination. The YB was assigned to a recombination from deep levels. The energy-dispersive X-ray spectroscopy show that C and O are the main residual impurities in undoped GaN and that C concentration is lower in the epilayers with the stronger BB. The electronic structures of native defects, C and O impurities, and their complexes were calculated using ab initio local-density-functional (LDF) methods with linear muffin-tin-orbital and 72-atomic supercell. The theoretical analyses suggest that the electron transitions from O-N states to C-N and to V-Ga states are responsible for DAP and the BB, respectively, and the electron transitions between the inner levels of the C-N-O-N complex may be responsible for the YB in our samples. (C) 2002 Elsevier Science B.V. All rights reserved.

Transition from the exhibition to the nonexhibition of negative differential thermal resistance in the two-segment Frenkel-Kontorova model

An extensive study of the one-dimensional two-segment Frenkel-Kontorova FK model reveals a transition from the counterintuitive existence to the ordinary nonexistence of a negative-differential-thermal-resistance NDTR regime, when the system size or the intersegment coupling constant increases to a critical value. A “phase” diagram which depicts the relevant conditions for the exhibition of NDTR was obtained. In the existence of a NDTR regime, the link at the segment interface is weak and therefore the corresponding exhibition of NDTR can be explained in terms of effective phonon-band shifts. In the case where such a regime does not exist, the theory of phonon-band mismatch is not applicable due to sufficiently strong coupling between the FK segments. The findings suggest that the behavior of a thermal transistor will depend critically on the properties of the interface and the system size.

NADPH oxidase-mediated generation of reactive oxygen species: A new mechanism for X-ray-induced HeLa cell death

Oxidative damage is an important mechanism in X-ray-induced cell death. Radiolysis of water molecules is a source of reactive oxygen species (ROS) that contribute to X-ray-induced cell death. In this study, we showed by ROS detection and a cell survival assay that NADPH oxidase has a very important role in X-ray-induced cell death. Under X-ray irradiation, the upregulation of the expression of NADPH oxidase membrane Subunit gp91(phox) was dose-dependent. Meanwhile, the cytoplasmic subunit p47(phox) was translocated to the cell membrane and localized with p22(phox) and gp91(phox) to form reactive NADPH oxidase. Our data Suggest, for the first time, that NADPH oxidase-mediated generation of ROS is an important contributor to X-ray-induced cell death. This suggests a new target for combined gene transfer and radiotherapy.

Topological constraints on scroll and spiral waves in excitable media

A conservation equation for topological charges of phase singularities (scroll and spiral waves) in excitable media is given. It provides some topological properties of scroll (spiral) waves: for example, the topological charge of the generated or annihilated spiral pair must be opposite. Additionally, we obtain another equation on scroll waves, which shows that singular filaments of scroll waves occur on a set of one-dimensional curves which may be either closed loops or infinite lines.

Asymmetric heat conduction in nonlinear lattices

In this Letter, we conduct an extensive study of the two-segment Frenkel-Kontorova model. We show that the rectification effect of the heat flux reported in recent literature is possible only in the weak interfacial coupling limit. The rectification effect will be reversed when the properties of the interface and the system size change. These two types of asymmetric heat conduction are governed by different mechanisms though both are induced by nonlinearity. An intuitive physical picture is proposed to interpret the reversal of the rectification effect. Since asymmetric heat conduction depends critically on the properties of the interface and the system size, it is probably not an easy task to fabricate a thermal rectifier or thermal diode in practice.

Properties of alpha-decay to ground and excited states of heavy nuclei

Branching ratios and half-lives of alpha-decay to the ground-state rotational bands as well as the high-lying excited states of even-even nuclei have been calculated in the framework of the generalized liquid drop model (GLDM) and Royer's formula that we improved very recently. The calculation covers the isotopic chains from Ra to No in the mass regions 222 <= A <= 252 and 88 <= Z <= 102. The agreement between the calculated results and the experimental data indicates the reliability of investigating the properties of the unfavored alpha-decay with our method, especially the improved Royer's formula, which is very valuable for the analysis of experimental data. In addition, the dependence of half-lives on excitation energies of daughter nuclei has been investigated. It is shown that the influence on half-lives becomes stronger and stronger with the increase of the excitation energies.