57 resultados para Angular distortion


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We propose a sinusoidal phase-modulating laser diode interferometer for measuring small angular displacement. The interferometer is based on a Fabry-Perot plate. It has a simple structure and is insensitive to external disturbance. Sinusoidal phase-modulating interferometry is used for improving the measurement accuracy. A charge-coupled device (CCD) image sensor is used for measuring the distance between the reflected beams from two faces of the Fabry-Perot plate. From the distance, the initial angle of incidence is calculated. Compared with Michelson interferometers and autocollimators, this interferometer has the advantage of compact size and simple structure. The numerical calculation and experimental results verify the usefulness of this novel interferometer. (C) 2004 Society of Photo-Optical Instrumentation Engineers.

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We describe the rigorous results of a wide-angle laser beam scanner, obtained with the help of the vector refraction theory. Using the rigorous results, the distortion of the beam shape is discussed. The distortion to the beam varies with the different relative angles of double prisms. The scanner expands the beam in some directions while it contracts the beam in other directions. According to the conservation of energy, the distribution of the laser intensity is changed as well. (c) 2006 Society of Photo-Optical Instrumentation Engineers.

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We describe the rigorous results of a wide-angle laser beam scanner, obtained with the help of the vector refraction theory. Using the rigorous results, the distortion of the beam shape is discussed. The distortion to the beam varies with the different relative angles of double prisms. The scanner expands the beam in some directions while it contracts the beam in other directions. According to the conservation of energy, the distribution of the laser intensity is changed as well. (c) 2006 Society of Photo-Optical Instrumentation Engineers.

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The application of digital holographic interferometry on the quantitative measurement of the domain inversion in a RuO2: LiNbO3 crystal wafer is presented. The recorded holograms are reconstructed by the angular spectrum method. From the reconstructed phase distribution we can clearly observe the boundary between the inverted and un-inverted domain regions. Comparisons with the results reconstructed by use of the Fresnel transform method are given. Factors that influence the measurement include the spectrum filter size and the spectrum movement are discussed. The spectrum filter size has an effect on the measurement of the details. Although the spectrum movement affects every single reconstructed image, it has no influence on the final measurement.

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A parallel plate interferometer with a reflecting mirror for measuring angular displacement is proposed. A deflection angle of a beam caused by an angular displacement is amplified by use of a reflecting mirror to increase the optical path difference (OPD) in the plane-parallel plate, which provides high sensitivity of the phase measurement. Detection of light transmitted through the plane-parallel plate with a position sensitive detector (PSD) enables high accurate measurement of the initial angle of incidence to the plane-parallel plate with insensitivity to stray light. The improved parallel plate interferometer achieves a measurement repeatability of 10(-8) rad. (C) 2007 The Optical Society of Japan.

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Optical frequency domain phase conjugation (FDPC) is based on phase conjugation of spectrum of an input signal. It is equivalent to the phase conjugation and the time reversal of the temporal envelope of an input signal. The use of FDPC to control polarization signal distortion in birefringent optical fiber systems is proposed. Evolution of polarization signals in the system using midway FDPC is analyzed theoretically and simulated numerically. It is shown that the distortion of polarization signals can be controlled effectively by FDPC. The impairments due to dispersion and nonlinear effects can be suppressed simultaneously.

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The measurement accuracy of a parallel-plate interferometer for angular displacement measurement is analyzed. The measurement accuracy of angular displacement is not only related to the accuracy of phase extraction, but also related to initial incident angle, refraction index and thickness of plane-parallel plate as well as wavelength's stability of laser diode, etc. Theoretical analysis and computer simulation show that the measurement error of the angular displacement bears a minimum value when choosing an optimal initial incident angle in a large range. These analytical results serve as a guide in practical measurement. In this interferometer, reducing the refraction index or increasing the thickness of the parallel plate can improve the measurement accuracy; and the relative error of the phase measurement is 3.0 x 10(-4) corresponding to 1 degrees C temperature variation. Based on these theoretical and experimental results, the measurement accuracy of the parallel-plate interferometer is up to an order of 10(-8) rad. (c) 2007 Elsevier Ltd. All rights reserved.

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The depth distribution of the strain-related tetragonal distortion e(T) in the GaN epilayer with low-temperature AlN interlayer (LT-AlN IL) on Si(111) substrate is investigated by Rutherford backscattering and channeling. The samples with the LT-AlN IL of 8 and 16 nm thickness are studied, which are also compared with the sample without the LT-AlN IL. For the sample with 16-nm-thick LT-AlN IL, it is found that there exists a step-down of e(T) of about 0.1% in the strain distribution. Meanwhile, the angular scan around the normal GaN <0001> axis shows a tilt difference about 0.01degrees between the two parts of GaN separated by the LT-AlN IL, which means that these two GaN layers are partially decoupled by the AlN interlayer. However, for the sample with 8-nm-thick LT-AlN IL, neither step-down of e(T) nor the decoupling phenomenon is found. The 0.01degrees decoupled angle in the sample with 16-nm-thick LT-AlN IL confirms the relaxation of the LT-AlN IL. Thus the step-down of e(T) should result from the compressive strain compensation brought by the relaxed AlN interlayer. It is concluded that the strain compensation effect will occur only when the thickness of the LT-AlN IL is beyond a critical thickness. (C) 2004 American Institute of Physics.