Er离子在Inp、GaAs和Si中的1.54μm特征发光峰

分别在InP、GaAs和Si中以7×10＜′14＞和1×10＜′15＞cm＜′－2＞的剂量进行Er离子注入, 并采用闭管、快速和炉退火等热处理。低温光致发光（PL）、反射式高等电子衍射和卢瑟福背散射实验研究表明, 上述样品中Er＜′3＋＞离子特征发光的中心波长均出现在1．5μm处, 其中InP的发光峰最强, 而注入损伤的恢复是影响Er＜′3＋＞发光的重要因素之一。卢瑟福背散射分析进一步证实退火后Er原子在Si中向表面迁移, 而在InP中的外扩散较小, 并比较了Er在InP和Si晶格中的占位情况。图7参12

1.54 mu m near-infrared photoluminescent and electroluminescent properties of a new Erbium (111) organic complex

The crystal structure of Er(PM)(3)(TP)(2) [PM = 1-Phenyl-3-methyl-4-isobutyryl-5-pyrazoloiie, TP = triphenyl phosphine oxide] was reported and its photoluminescence properties were studied by UV-vis absorption, excited, and emission spectra. The Judd-ofelt theory was introduced to calculate the radiative transition rate and the radiative decay time of 3.65 ms for the I-4(13/2) -> I-4(15/2) transition of Er3+ ion in this complex.

1.54 mu m infrared photoluminescence and electroluminescence from an erbium organic compound

Infrared emission at 1.54 mu m excited optically and electrically from an erbium organic compound tris(acetylacetonato)(1,10-phenanthroline) erbium [Er(acac)(3)(phen)] is observed. The rare-earth complex is dispersed into a polymer matrix of poly(N-vinylcarbazole) (PVK) to fabricate an electroluminescent (EL) device with an ITO/PVK:Er(acac)(3)(phen)/Al:Li/Ag structure, where ITO represents indium-tin-oxide-coated glass. The device shows infrared EL emission at 1.54 mu m, which suggests a simple and cheap method to obtain a light source for 1.54-mu m-wavelength devices in optical communications. (C) 2000 American Institute of Physics. [S0021-8979(00)00301-7].

北京地区施硫肥对苜蓿品质及消化率的影响

在北京潮土地区施硫肥（S）显著提高了苜蓿粗蛋白和粗灰分含量，降低了粗纤维含量。苜蓿植株体内的S含量从0．19％提高到0．33％左右．增幅达50％～70％；同时施硫肥还提高了K的含量，但降低了P和Na的含量，显著降低了N：S。植株体内的S含量只与N、K含量高度正相关。施硫肥显著提高了含硫氨基酸（半胱氨酸和蛋氨酸）的含量；另外，还显著提高了第1，2茬的苏氨酸、丙氨酸和精氨酸的含量，对其他氨基酸含量的影响不一致。除谷氨酸和缬氨酸外．含硫氨基酸与其他氨基酸含量间均呈显著或极显著负相关。施硫肥还显著提高了干物质和有机质的消化率，而对粗蛋白的消化率影响不显著；干物质与有机质消化率与纤维索含量呈高度负相关．而与粗蛋白和粗灰分含量高度正相关。第1～3茬苜蓿适宜的含硫量范围分别为0.23％～0．38％，0．28％～0．37％和0．28％～0．38％，适宜的N：S为（9．0～12．8）：1。2种施硫肥的当年利用效率为87．5％和54．7％。