246 resultados para 45 degrees high-reflection mirror


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The performance of combustion driver ignited by multi-spark plugs distributed along axial direction has been analysed and tested. An improved ignition method with three circumferential equidistributed ignitors at main diaphragm has been presented, by which the produced incident shock waves have higher repeatability, and better steadiness in the pressure, temperature and velocity fields of flow behind the incident shock, and thus meets the requirements of aerodynamic experiment. The attachment of a damping section at the end of the driver can eliminate the high reflection pressure produced by detonation wave, and the backward detonation driver can be employed to generate high enthalpy and high density test flow. The incident shock wave produced by this method is well repeated and with weak attenuation. The reflection wave caused by the contracted section at the main diaphragm will weaken the unfavorable effect of rarefaction wave behind the detonation wave, which indicates that the forward detonation driver can be applied in the practice. For incident shock wave of identical strength, the initial pressure of the forward detonation driver is about 1 order of magnitude lower than that of backward detonation.

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The behaviors of a crack in body-centered-cubic metal Mo under different loading modes were studied using the molecular dynamics method. Dislocation emission was observed near the crack tip in response to mode II loading with theta = 0 degrees in which theta is the inclination angle of the slip plane with respect to the crack plane, and two full dislocations were observed at the stress level of K-II = 1.17 MPa m(1/2) without any evidence of crack extension. Within the range of 0 degrees less than or equal to theta less than or equal to 45 degrees, crack extension was observed in response to mode I loading, and the effect of crystal orientation on the crack propagation was studied, The crack propagated along the [111] slip direction without any evidence of dislocations emission.

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This paper combines the four-point bending test, SEM and finite element method to study the interface fracture property of PEO coatings on aluminum alloy. The interface failure mode of the coating on the compression side is revealed. The ceramic coating crack firstly along the 45 degrees to the interface, then the micro crack in the coating deduces the interface crack. The plastic deformation observed by SEM shows excellent adhesion property between the coating and substrate. The plastic deformation in the substrate is due to the interfacial crack extension, so the interface crack mode of PEO coatings is ductile crack. The results of FEM show that the compression strength is about 600 MPa. (C) 2008 Elsevier B.V. All rights reserved.

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An analytical fluid model for vacuum heating during the oblique incidence by an ultrashort ultraintense p-polarized laser on a solid-density plasma is proposed. The steepening of an originally smooth electron density profile as the electrons are pushed inward by the laser is included self-consistently. It is shown that the electrons being pulled out and then returned to the plasma at the interface layer by the wave field can lead to a phenomenon like wave breaking since the front part of the returning electrons always move slower than the trailing part. This can lead to heating of the plasma at the expense of the wave energy. An estimate for the efficiency of laser energy absorption by the vacuum heating is given. It is also found that for the incident laser intensity parameter, a(L)> 0.5, the absorption rate peaks at an incident angle 45 degrees-52 degrees and it reaches a maximum of 30% at a(L)approximate to 1.5.

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The electro-optic effect in uniaxial crystals for light propagating near the optic axis with any polarization has been analyzed. The passive and the electrically induced birefringences and the rotation of polarization direction in crystals have been calculated, and the conoscopic interference figures under orthogonal polariscopes for different polarizer directions have been plotted. The extinction areas caused by the rotation of polarization direction in crystals change with the polarizer direction, but the two heads of the induced optical axes do not vary, which are always on the induced principal axis with bigger refractive index. The directions of polariscopes are always extinction, and the +/- 45 degrees directions with polarizer are always complete transmission. The conoscopic interference figures for LiNbO3 crystals have been demonstrated experimentally by rotating polariscopes directions, which accord with the theoretically calculating plots. (c) 2006 Elsevier GmbH. All rights reserved.

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单长周期光栅迈克耳孙(Michelson)干涉仪是由尾纤端面蒸镀高反膜的单根长周期光纤光栅构成。入射光经长周期光栅后,部分被耦合到包层中传输。经过包层和纤芯传输的光信号经尾纤端面反射后,重新耦合回到长周期光栅中,在光栅区域形成干涉。通过理论计算分析了各种因素对其光谱响应的影响。从实验上得到了干涉光谱的谐振峰波长位移与光纤段温度变化成良好的线性关系,测得其温度系数为31.3pm/℃。表明这种结构可用于高温传感或作为波分复用滤波器。

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In the present paper, we propose a novel method for measuring the even aberrations of lithographic projection optics by use of optimized phase-shifting marks on the test mask. The line/space ratio of the phase-shifting marks is optimized to obtain the maximum sensitivities of Zernike coefficients corresponding to even aberrations. Spherical aberration and astigmatism can be calculated from the focus shifts of phase-shifting gratings oriented at 0 degrees, 45 degrees, 90 degrees and 135 degrees at multiple illumination settings. The PROLITH simulation results show that, the measurement accuracy of spherical aberration and astigmatism obviously increase, after the optimization of the measurement mark. (C) 2008 Elsevier B.V. All rights reserved.

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Nanocrystalline Zn0.95 - xNi0.05AlxO (x = 0.01, 0.02, 0.05 and 0.10) diluted magnetic semiconductors have been synthesized by an auto-combustion method. X-ray diffraction measurements indicate that all Al-doped Zn0.95Ni0.05O samples have the pure wurtzite structure. Transmission electron microscope analyses show that the as-synthesized powders are of the size 40 - 45 nm. High-resolution transmission electron microscope, energy dispersive spectrometer and X-ray photoemission spectroscope analyses indicate that Ni2+ and Al3+ uniformly substitute Zn2+ in the wurtzite structure without forming any secondary phases. The Al doping concentration dependences of cell parameters (a and c), resistance and the ratio of green emission to UV emission have the similar trends. (c) 2007 Elsevier B.V. All rights reserved.

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本文主要研究了真空中有机污染物对薄膜阈值的影响。采用电子枪蒸镀的方式制备了由TiO2/SiO2两种材料组合而成的1064nm高反膜,分别在大气和真空中对其损伤阈值进行了测量。发现在真空中污染物易黏附于光学元件表面,导致损伤;真空中的氧分子会加速损伤过程,根据破斑形貌的分析认为是由于在激光作用下氧分子与有机污染物发生反应造成的;真空中的有机污染物被去除后,真空和大气中的损伤阈值差别不大,破斑形貌相似。结果表明有机污染物是真空中损伤阈值降低的主要原因。

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Glancing angle deposition is a novel method to prepare graded index coatings. By using this method and physical vapour deposition, ZrO2 is used to engineer graded index filter on BK7 glass substrate. Controlling the deposition rate and the periodic oscillation of oblique angle of deposited material, a 10-period graded index ZrO2 filter with high reflection near 532 nm and high transmittance at wavelength 1064 nm is fabricated. The causes of difference between the theoretical and experimental results are discussed in detail. The material properties and electron gun nonlinearity are possibly the main origins of the difference, which result in the variations in both thickness control and deposition rate of the Elm material.

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A normal-incidence nonpolarizing guided-mode resonance filter is designed. There are two waveguide layers and one grating layer in the filter. By adjusting the distance between the two waveguide layers, the same resonance wavelength for both TE and TM polarization can be achieved. An antireflection design method is also used to decrease the sideband reflection of the filter. The results show that the filter has high reflection, more than 99.9% at 500 nm, and the FW-HMs of TE- and TM-polarized light are 2.16 and 0.15 nm, respectively. (C) 2009 Optical Society of America

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We use a polarizer to investigate quantum-well infrared absorption, and report experimental results as follows. The intrasubband transition was observed in GaAs/AlxGa1-xAs multiple quantum wells (MQWs) when the incident infrared radiation (IR) is polarized parallel to the MQW plane. According to the selection rule, an intrasubband transition is forbidden. Up to now, most studies have only observed the intersubband transition between two states with opposite parity. However, our experiment shows not only the intersubband transitions, but also the intrasubband transitions. In our study, we also found that for light doping in the well (4x10(18) cm(-3)), the intrasubband transition occurs only in the lowest subband, while for the heavy doping (8x10(18) cm(-3)), such a transition occurs not only in the lowest subband, but also in the first excited one, because of the electron subband filling. Further experimental results show a linear dependence of the intrasubband transition frequency on the root of the well doping density. These data are in good agreement with our numerical results. Thus we strongly suggest that such a transition can be attributed to plasma oscillation. Conversely, when the incident IR is polarized perpendicular to the MQW plane, intersubband-transition-induced signals appear, while the intrasubband-transition-induced spectra disappear for both light and heavy well dopings. A depolarization blueshift was also taken into account to evaluate the intersubband transition spectra at different well dopings. Furthermore, we performed a deep-level transient spectroscopy (DLTS) measurement to determine the subband energies at different well dopings. A good agreement between DLTS, infrared absorption, and numerical calculation was obtained. In our experiment, two important phenomena are noteworthy: (1) The polarized absorbance is one order of magnitude higher than the unpolarized spectra. This puzzling result is well explained in detail. (2) When the IR, polarized perpendicular to the well plane, normally irradiates the 45 degrees-beveled edge of the samples, we only observed intersubband transition spectra. However, the intrasubband transition signals caused by the in-plane electric-field component are significantly absent. The reason is that such in-plane electric-field components can cancel each other out everywhere during the light propagating in the samples. The spectral widths of bound-to-bound and bound-to-continuum transitions were also discussed, and quantitatively compared to the relaxation time tau, which is deduced from the electron mobility. The relaxation times deduced from spectral widths of bound-to-bound and bound-to-continuum transitions are also discussed, and quantitatively compared to the relaxation time deduced from electron mobility. [S0163-1829(98)01912-2].

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InGaAsP-InP square microlasers with a vertex output waveguide are fabricated by planar processes, and the etched sidewalls of the lasers are confined by insulating layer SiO2 and p-electrode TiAu metals. For a square microlaser with a side length of 30 mu m and a 2-mu m-wide output waveguide, a continuous-wave threshold current is 26 mA at room temperature and output power is 0.72 mW at 86 mA. The mode interval of 21 and 7.4 nm is observed for the microlasers with the side length of 10 and 30 mu m, respectively. Finite-difference time-domain (FDTD) simulations indicate that the lasing modes have incident angles of about 45 degrees at the boundaries of the resonator. In addition, square resonators surrounded by air, SiO2-Ti-Au, and SiO2-Au are compared by FDTD simulations.

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A single longitudinal mode and narrow line width external cavity semiconductor laser is proposed. It is constructed with a semiconductor laser, collimator, a flame grating, and current and temperature control systems. The one facet of semiconductor laser is covered by high transmission film, and another is covered by high reflection film. The flame grating is used as light feedback element to select the mode of the semiconductor laser. The temperature of the constructed external cavity semiconductor laser is stabilized in order of 10(-3)degreesC by temperature control system. The experiments have been carried out and the results obtained-the spectral fine width of this laser is compressed to be less than 1.4MHz from its original line-width of more than 1200GHz and the output stability (including power and mode) is remarkably enhanced.

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We describe a first-principles-based strategy to predict the macroscopic toughness of a gamma-Ni(Al)/alpha-Al2O3 interface. Density functional theory calculations are used to ascertain energy changes upon displacing the two materials adjacent to the interface, with relaxation conducted over all atoms located within adjoining rows. Traction/displacernent curves are obtained from derivatives of the energy. Calculations are performed in mode I (opening), mode II (shear) and at a phase angle of 45 degrees. The shear calculations are conducted for displacements along < 110 > and < 112 > of the Ni lattice. A generalized interface potential function is used to characterize the results. Initial fitting to both the shear and normal stress results is required to calibrate the unknowns. Thereafter, consistency is established by using the potential to predict other traction quantities. The potential is incorporated as a traction/displacement function within a cohesive zone model and used to predict the steady-state toughness of the interface. For this purpose, the plasticity of the Ni alloy must be known, including the plasticity length scale. Measurements obtained for a gamma-Ni superalloy are used and the toughness predicted over the full range of mode mixity. Additional results for a range of alloys are used to demonstrate the influences of yield strength and length scale.