Optical anisotropy of InAs monolayer in (311)-oriented GaAs matrix

In-plane optical anisotropy which comes from the heavy hole and the light hole transitions in an InAs monolayer inserted in (311)-oriented GaAs matrix is observed by reflectance difference spectroscopy. The observed steplike density of states demonstrates that the InAs layer behaves like a two-dimensional quantum well rather than isolated quantum dots. The magnitude of the anisotropy is in good agreement with the intrinsic anisotropy of (311) orientation quantum wells, indicating that there is little structural or strain anisotropy of the InAs layer grown on (311)-oriented GaAs surface.

EFFECTIVE-MASS THEORY FOR GAAS/GA1-XALXAS QUANTUM WIRES AND CORRUGATED SUPERLATTICES GROWN ON (311)-ORIENTED SUBSTRATES

The electronic structures of GaAs/Ga1-xAlxAs quantum wires (corrugated superlattices) grown on (311)-oriented substrates are studied in the framework of the effective-mass envelope-function method. The electron and hole subband structure and optical transition matrix elements are calculated. When x=1, the results are compared with experiments, and it is found that the direct transition becomes an indirect transition as the widths of well and barrier become smaller.

Optical characterization of InAs monolayer quantum structures grown on (311)A, (311)B, and (100)GaAs substrates

Low-temperature photoluminescence and excitation spectra from InAs monolayer quantum structures, grown on (311)A, (311)B, and (100) GaAs substrates, are investigated, The structures were grown simultaneously by conventional molecular-beam epitaxy (MBE), The experimental results show that the quality of InAs monolayer on (311)B GaAs substrate is obviously better in crystal quality than those on the two other oriented GaAs substrates. In addition, the transition peaks of the InAs layer grown on (311) GaAs substrates shift to higher energy with respect to that from the InAs layer grown on (100) GaAs substrate.

GaAs（311）A衬底上自组装InAs量子点的结构和光学特性

于2010-11-23批量导入

生长在（311）A面GaAs衬底上的InAlAs/AlGaAsⅡ型量子点的光致发光研究

于2010-11-23批量导入

Optical anisotropy of InAs submonolayer quantum wells in a (311) GaAs matrix

The steplike density of states obtained from reflectance-difference spectroscopy demonstrates that ultrathin InAs layers should be regarded as two-dimensional quantum wells rather than isolated clusters, even for the sample with only 1/3 monolayer InAs in (311)-oriented GaAs. The degree of anisotropy is within the intrinsic anisotropy of (311)-oriented ultrathin quantum wells, indicating that there is little structural or strain anisotropy in the InAs islands. (C) 1998 Elsevier Science B.V.

Structural Failure Analysis and Numerical Simulation of Micro-Accelerometers under Impulsive Loading

Micromachined accelerometer is a kind of inertial MEMS devices, which usually operate under intensive impact loading. The reliability of micromachined accelerometers is one of the most important performance indices for their design, manufacture and commer

Preliminary Investigation of Fluid Flow in Meso-Scale Rectangular Tube

The fluid flow associated with micro and meso scale devices is currently of interest. Experiments were performed to study the fluid flow in meso-scale channels. A straight flow tube was fabricated with 1.0x4.0mm^2 in rectangular cross section and 200mm in length, which was made of quartz for flow visualization and PIV measurements. Reynolds numbers were ranged from 311 to over 3105. The corresponding pressure drop was from 0.65KPa to over 16.58KPa between the inlet and outlet of the tube. The micro PIV was developed to measure the velocity distribution in the tube. A set of microscope object lens was mounted ahead of CCD camera to obtain optimized optical magnification on the CCD chip. The velocity distributions near the outlet of the tube were measured to obtain full-developed flow. A CW laser beam was focused directly on the test section by a cylinder lens to form a small light sheet. Thus, high power density of light was formed on the view region. It is very important to the experiment while the velocity of the flow reaches to a few meters per second within millimeter scale. In this case, it is necessary to reduce exposure time to microseconds for PIV measurements. In the present paper, the experimental results are compared with the classical theories.

跨声速开槽壁超临界翼型洞壁干扰的N－S方程模拟

本文采用二维可压缩非定常Ｎ－Ｓ方程模拟了带有上下开槽壁的跨声速二维管风洞中超临界翼型绕流的流场。网格生成中内层采用解双曲型偏微分方程，外层采用代数生成法。开槽壁采用只有压力梯度没有顶板运动的Ｃｏｕｅｔｔｅ流动的解析解近似。推导出槽间流动与开闭比的三次方关系。上下壁边界层可由无滑移条件直接模拟，也可用平板边界层近似。本文对驻室压力作了几种近似处理，结果表明，所给Ｎ－Ｓ方程的边界条件与风洞实验多接近一步，其结果就符合得更好，这为下一步用Ｎ－Ｓ方程进行洞壁干扰修正打下了基础。

磁场约束的近圆弧形等离子体拱

等离子体弧是日冕中的一种基本结构,其高温观测特性意味着它有较高的等离子体压力。本文在二维近似下,讨论了等离子体拱被两个强磁场区域所约束时的平衡。对于较大的等离子体标高,等离子体具有近似圆弧形的结构。通过求出强磁场区域中的磁场位形,可以得到孤立的等离子体拱的平衡状态。由于总压守恒的边界条件是高度非线性的,整个问题是一类非线性的自由边界问题。在近圆弧形近似下,其基态是一维的非线性问题,而相对于基态的偏离是二维的线性问题。这样,整个问题可以给出分析解。

摄动法在研究弹-粘塑性波问题中的应用

采用控制金属材料宏观塑性流动的两个无量纲物理参数作为小参数,将一维弹/粘-塑性问题的解摄动展开,从而,求解非线性波动方程的问题可以转化成求解相应的齐次或非齐次电报方程的问题,用Laplace积分变换或级数展开技术首先得到零次精确解。然后,用Riemann函数方法可获得一次和高次摄动解。与非线性问题的数值解比较,在恒应力或恒速度边界条件下,一次摄动解给出了波动问题的良好近似。这就表明,摄动技术在研究一类广泛的弹/粘-塑波问题中是有效的。

托卡马克中等离子体平衡的数值计算

<正> 一.引言 环形等离子体的理想磁流体力学平衡的自由边界问题,等人做了研究,但是仅给出a/R《1的圆截面等离子体柱平衡的分析结果。目前建造大型托卡马克装置时,要求纵横比a/R比较大,并且要能够准确的求出等离子体的平衡位形。本文用超松弛法求解平衡方程,得到计算自由边界问题的磁面的方法。自由边界问

T.E. wave in inhomogeneous magnetized plasma-filled cylindrical waveguide

The T. E. wave in cylindrical wavegulde filled with inhomogeneous plasma immersed in the external uniform longitudinal magnetic field is investigated. The analytic solution expressed in polynomial formed by cutting the confluent hypergeometric function is obtained. Furthermore the eigenfrequency of T. E. wave is obtained.