190 resultados para 303-U1308


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We have investigated ultraviolet (UV) photorefractive effect of lithium niobate doubly doped with Ce and Cu. It is found the diffraction efficiency shows oscillating behavior Under UV-1ight-recording. A model in which electrons and holes can be excited from impurity centers in the UV region is proposed to study the oscillatory behavior of the diffraction efficiency. Oil the basis of the material equations and the coupled-wave equations, we found that the oscillatory behavior is due to the oscillation of the relative spatial phase shift Phi. And the electron-hole competition may cause the oscillation of the relative spatial phase shift. A switch point from electron grating to hole grating is chosen to realize nonvolatile readout by a red light with high sensitivity (0.4 cm/J). (c) 2005 Elsevier GmbH. All rights reserved.

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A four-frame phase shift method and an associated algorithm using unequal phase steps are presented. The unique advantage of this method is that it becomes insensitive to phase shifter nonlinearity because of the performance of a special procedure, in which the phase shifts are shared out between the reference beam and the object beam. By this means, any phase shifter can work as long as one phase shift is accurately known. On the basis of the technique, a simple calibration method for the linear phase shifter is suggested. The influences of phase shifter miscalibration, detector nonlinearity and random noise on the algorithm are investigated, and the optimal phase shifts are given.

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The Er3+-Yb3+ codoped Al2O3 has been prepared by the sol-gel method using the aluminium isopropoxide [Al(OC3H7)(3)]-derived Al2O3 sols with addition of the erbium nitrate [Er(NO3)(3) center dot 5H(2)O] and ytterbium nitrate [Yb(NO3)(3) center dot 5H(2)O]. The phase structure, including only two crystalline types of doped Al2O3 phases, theta and gamma, was obtained for the 1 mol% Er3+ and 5 mol% Yb3+ codoped Al2O3 at the sintering temperature of 1,273 K. By a 978 nm semiconductor laser diodes excitation, the visible up-conversion emissions centered at about 523, 545, and 660 nm were obtained. The temperature dependence of the green up-conversion emissions was studied over a wide temperature range of 300-825 K, and the reasonable agreement between the calculated temperature by the fluorescence intensity ratio (FIR) theory and the measured temperature proved that Er3+-Yb3+ codoped Al2O3 plays an important role in the application of high temperature sensor.

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Nonpolar a-plane (1 1 2 0) ZnO films are fabricated on (3 0 2)gamma-LiAlO2 substrate by pulsed laser deposition. When substrate temperature is low, c-plane ZnO is dominant. As growth temperature increases to similar to 500 degrees C, pure (1 1 2 0)-oriented ZnO film can be obtained. The X-ray rocking curve of a-plane ZnO film broadens sharply when growth temperature is up to similar to 650 degrees C; such a broadening may be related to the anisotropic lateral growth rate of (1 12 0)-oriented ZnO grains. Atomic force microscopy reveals the surface morphology changes of ZnO films deposited at different temperatures. Raman spectra reveal that a compressive stress exists in the a-plane ZnO film. (C) 2007 Published by Elsevier B.V.

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用磁控溅射法制备了顶层分别是Mo膜层和Si膜层的两个系列的Mo/Si多层膜,它们的周期厚度相同但是膜层数各不相同。Mo/Si多层膜的周期厚度和界面粗糙度由小角X射线衍射(SAXRD)曲线拟和得到。用原子力显微镜测量了Mo/Si多层膜的表面粗糙度。在国家同步辐射实验室测量了Mo/Si多层膜的软X射线反射率。通过理论和试验研究,发现Mo/Si多层膜的软X射线反射率主要由周期数和界面粗糙度决定,表面粗糙度对Mo/Si多层膜的软X射线反射率影响较小。

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在特定波长下,用四层结构模型模拟了Mo/Si多层膜的软X射线反射率.研究了扩散屏障层dMo-on-Si和dSi-on-Mo对Mo/Si多层膜软X射线反射率的影响.研究发现,扩散屏障层并不总是损害Mo/Si多层膜的光学性能,通过合理设计dMo-on-Si和dSi-on-Mo厚度,增加dMo-on-Si与dSi-on-Mo的比值,也能提高多层膜的软X射线反射率.

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