无指盘臭蛙免疫调节肽、其基因和变异体及其在制药中的应用

本发明涉及无指盘臭蛙免疫调节肽、基因和变异体及其在制药中的应用，属生物医学技术领域。无指盘臭蛙免疫调节肽是一种环状多肽，分子量1791.12道尔顿，等电点 9.84，无指盘臭蛙免疫调节肽的全序列为：Thr Ser Arg Cys Tyr Ile Gly Tyr Arg Arg Lys Val Val Cys Ser(TSRCYIGYRRKVVCS)，其第4位的半胱氨酸和第14位的半胱氨酸形成分子内二硫键。编码的基因由307个核苷酸组成，其中编码成熟部分的为第 141-186位核苷酸。无指盘臭蛙免疫调节肽原始序列中第4个氨基酸发生替代所产生的变异体，人工合成的无指盘臭蛙免疫调节肽及其变异体具有强烈的免疫调节活性和肿瘤抑制活性，作为制备免疫调节、肿瘤治疗和化疗药物的应用。本发明还具有序列简单、合成方便等优点。

N49 phospholipase A(2), a unique subgroup of snake venom group II phospholipase A(2)

A novel phospholipase A(2) (PLA(2)) with Asn at its site 49 was purified from the snake venom of Protobothrops mucrosquamatus by using SP-Sephadex C25, Superdex 75, Heparin-Sepharose (FF) and HPLC reverse-phage C-18 chromatography and designated as TM-N49

Relaxation of selective constraints on avian mitochondrial DNA following the degeneration of flight ability

The evolution of flight is the most important feature of birds, and this ability has helped them become one of the most successful groups of vertebrates. However, some species have independently lost their ability to fly. The degeneration of flight abilit

5，6-二羟基-2-（4-羟苯基）-4-酮-4H-1-苯并吡喃基-7-羟基-β-D-葡萄糖醛酸在制药中的应用

本发明提供化合物5，6-二羟基-2-(4-羟苯基)-4-酮-4H-1-苯并吡喃基-7-羟基-β-D-葡萄糖醛酸在制备抗艾滋病药物中和在制备逆转录酶抑制剂药物中的应用。

天然水体中痕量微囊藻毒素的高效液相色谱测定方法优化

以微囊藻毒素LR(MC-LR)和微囊藻毒素RR(MC-RR)为材料,主要通过调节杂质淋洗液和毒素洗脱液中甲醇、水和三氟乙酸(TFA)的配比来改变极性和PH值,对高效液相色谱(HPLC)法分析MC环境样品的方法进行了优化。结果表明,含0.1%TFA的40%~45%的甲醇水溶液可以取得较好的杂质淋洗效果;含0.1%TFA的70%的甲醇水溶液可以将固相萃取柱(SPE)上的MC完全洗下。因此,建议在分析杂质较多的环境样品时,使用含0.1%TFA的40%~45%的甲醇水溶液对杂质进行淋洗,然后用含0.1%TFA的7

武汉莲花湖微囊藻毒素含量变化特征及其影响因素的研究

采用现场采样及室内测试方法,研究了武汉莲花湖水华消亡过程中微囊藻毒素和环境生态因子的变化规律,并探讨了环境生态因子对微囊藻毒素产生的影响。结果表明,莲花湖微囊藻毒素含量以MC-LR为主,在水华消亡时大量释放到水体中,且较高的藻毒素含量能持续数天。对环境因子的相关分析表明,水体中的微囊藻毒素含量与铵氮、总磷显著正相关,与氮磷比显著负相关(P<0.05)。根据多元逐步回归统计进一步分析,筛选出相对重要的影响因子及合并共线形因子。经显著性检验,逐步回归统计结果为MC=13.62+5.77×NH4+-0.48×T

Role of Bi3+ ions for Er3+ ions efficient 1.54 mu m light emission in Er/Bi codoped SiO2 thin film prepared by sol-gel method

Er/Bi codoped SiO2 thin films were prepared by sol-gel method and spin-on technology with subsequent annealing process. The bismuth silicate crystal phase appeared at low annealing temperature while vanished as annealing temperature exceeded 1000 degrees C, characterized by X-ray diffraction, and Rutherford backscattering measurements well explained the structure change of the films, which was due to the decrease of bismuth concentration. Fine structures of the Er3+-related 1.54 mu m light emission (line width less than 7 nm) at room temperature was observed by photoluminescence (PL) measurement. The PL intensity at 1.54 gm reached maximum at 800 degrees C and decreased dramatically at 1000 degrees C. The PL dependent annealing temperature was studied and suggested a clear link with bismuth silicate phase. Excitation spectrum measurements further reveal the role of Bi3+ ions for Er3+ ions near infrared light emission. Through sol-gel method and thermal treatment, Bi3+ ions can provide a perfect environment for Er3+ ion light emission by forming Er-Bi-Si-O complex. Furthermore, energy transfer from Bi3+ ions to Er3+ ions is evidenced and found to be a more efficient way for Er3+ ions near infrared emission. This makes the Bi3+ ions doped material a promising application for future erbium-doped waveguide amplifier and infrared LED

Passive Q-switched mode locking of double-clading Yb : fiber laser with ion-implanted GaAs

We report the technique of the ion-implanted semi-insulating GaAs wafer used for passive Q-switched mode locking in double-cladding Yb:fiber laser. The wafer was implanted with 400-keV energy, 10(16)/cm(2) dose As+ ions, and was annealed at 600degreesC for 20 min. At the pump power of 5W, we achieved output power of 200mW. The repetition rate of envelope of Q-switched mode locking is 50-kHz with a FWHM envelope of 4mus. The repetition rate of mode locked pulse train was found to be 15-MHz. This is the first report of such a kind of laser to the best of our knowledge.

Thermal redistribution of localized excitons and its effect on the luminescence band in InGaN ternary alloys

Temperature-dependent photoluminescence measurements have been carried out in zinc-blende InGaN epilayers grown on GaAs substrates by metalorganic vapor-phase epitaxy. An anomalous temperature dependence of the peak position of the luminescence band was observed. Considering thermal activation and the transfer of excitons localized at different potential minima, we employed a model to explain the observed behavior. A good agreement between the theory and the experiment is achieved. At high temperatures, the model can be approximated to the band-tail-state emission model proposed by Eliseev et al. [Appl. Phys. Lett. 71, 569 (1997)]. (C) 2001 American Institute of Physics.

基于工作流的J2EE遗留系统改造

为了满足用户对软件系统内部业务过程定义的定制需求,针对流行的J2EE平台,以工作流技术为基础设计了对遗留软件系统的改造平台JSPMP。JSPMP利用工作流引擎的过程定义与任务管理能力驱动系统业务流程执行,赋予软件系统在业务过程定义方面的动态可定制性。实践证明,开发者利用此方案能够迅速改造遗留系统,满足用户多样化的过程定制需求,极大地降低了改造、定制成本。

南海名浅考

根据历史文献分析，已知南海海名最早出现于周宣王（827BC--782BC在位）时的《江汉》诗中。秦汉之间214

南海北部白云深水区之基础地质

白云深水区具有复杂而特殊的地质条件：位于中生代俯冲带的构造软弱带、新

离子注入GaAs实现双包层掺镱光纤激光器被动调Q锁模

用离子注入的半绝缘GaAs晶片作为吸收体和输出镜,在双包层掺镱光纤激光器上实现了调Q锁模.离子注入的能量为400keV的As+离子,注入剂量为1016/cm2,然后在600℃下退火20min.当抽运功率为5W时,脉冲平均输出功率为200mW,调Q包络重复频率为50kHz,半高宽为4μs,锁模脉冲重复频率为15MHz。