企鹅珍珠贝同工酶酶谱特征及其遗传分析

采用垂直板状聚丙烯酰胺梯度凝胶电泳分离技术,对企鹅珍珠贝闭壳肌、外套膜、鳃、消化盲囊、足组织的SOD、EST、LDH、G6PDH、MDH、ME 6种同工酶酶谱特征及其遗传控制进行了研究。6种同工酶在不同组织中的表达有明显的差异,同工酶分析共检测到18个位点,其中有16个位点具多态性,群体中,多态位点比例为88.8％,平均杂合度为0.396±0.029。有13个多态位点上的基因型频率与Hardy-Weinberg定律相符(P>0.05),位点Ldh-1、Ldh-2、Sod-2极显著偏离该平衡(P<0.01)

Codoping of magnesium with oxygen in gallium nitride nanowires

Codoping of p-type GaN nanowires with Mg and oxygen was investigated using first-principles calculations. The Mg becomes a deep acceptor in GaN nanowires with high ionization energy due to the quantum confinement. The ionization energy of Mg doped GaN nanowires containing passivated Mg-O complex decreases with increasing the diameter, and reduces to 300 meV as the diameter of the GaN nanowire is larger than 2.01 nm, which indicates that Mg-O codoping is suitable for achieving p-type GaN nanowires with larger diameters. The codoping method to reduce the ionization energy can be effectively used in other semiconductor nanostructures. (C) 2010 American Institute of Physics.

Tensile and compressive mechanical behavior of twinned silicon carbide nanowires

Molecular dynamics simulations with the Tersoff potential were used to study the response of twinned SiC nanowires under tensile and compressive strain. The critical strain of the twinned nanowires can be enhanced by twin stacking faults, and their critical strains are larger than those of perfect nanowires with the same diameters. Under axial tensile strain, the bonds of the nanowires are stretched just before failure. The failure behavior is found to depend on the twin segment thickness and the diameter of the nanowires. An atomic chain is observed for thin nanowires with small twin segment thickness under tension strain. Under axial compressive strain, the collapse of twinned SiC nanowires exhibits two different failure modes, depending on the length and diameter of the nanowires, i.e., shell buckling for short nanowires and columnar buckling for longer nanowires.

Defects in gallium nitride nanowires: First principles calculations

Atomic configurations and formation energies of native defects in an unsaturated GaN nanowire grown along the [001] direction and with (100) lateral facets are studied using large-scale ab initio calculation. Cation and anion vacancies, antisites, and interstitials in the neutral charge state are all considered. The configurations of these defects in the core region and outermost surface region of the nanowire are different. The atomic configurations of the defects in the core region are same as those in the bulk GaN, and the formation energy is large. The defects at the surface show different atomic configurations with low formation energy. Starting from a Ga vacancy at the edge of the side plane of the nanowire, a N-N split interstitial is formed after relaxation. As a N site is replaced by a Ga atom in the suboutermost layer, the Ga atom will be expelled out of the outermost layers and leaves a vacancy at the original N site. The Ga interstitial at the outmost surface will diffuse out by interstitialcy mechanism. For all the tested cases N-N split interstitials are easily formed with low formation energy in the nanowires, indicating N-2 molecular will appear in the GaN nanowire, which agrees well with experimental findings.

Realization of MMI power splitter by UV-light imprinting technique using hybrid sol-gel SiO2 materials

An efficient fabrication scheme of buried ridge waveguide devices is demonstrated by UV-light imprinting technique using organic-in organic hybrid sol-gel Zr-doped SiO2 materials. The refractive indices of a guiding layer and a cladding layer for the buried ridge waveguide structure are 1.537 and 1.492 measured at 1550 nm, respectively. The tested results show more circular mode profiles clue to existence of the cladding layer. A buried ridge single-mode waveguide operating at 1550 nm has a low propagation loss (0.088 dB/cm) and the 1 x 2 MMI power splitter exhibits uniform outputs, with a very low splitting loss of 0.029 dB at 1549 nm.

Structure and Electronic Properties of Saturated and Unsaturated Gallium Nitride Nanotubes

The atomic and electronic structures of saturated and unsaturated GaN nanotubes along the [001] direction with (100) lateral facets are studied using first-principles calculations. Atomic relaxation of nanotubes shows that appreciable distortion occurs in the unsaturated nanotubes. All the nanotubes considered, including saturated and unsaturated ones, exhibit semiconducting, with a direct band gap Surface states arisen from the 3-fold-coordinated N and Ga atoms at the lateral facets exist inside the bulklike band gap. When the nanotubes are saturated with hydrogen, these dangling bond bands are removed from the band gap, but the band gap decreases with increasing the wall thickness of the nanotubes.

Photovoltage and photoreflectance spectroscopy of InAs/GaAs self-organized quantum dots

We present a detailed study of the interband excitonic transitions of InAs/GaAs self-organized quantum dots (QDs) based on photovoltage (PV) photoreflectance (PR) and photoluminescence (PL) spectroscopy. At room temperature, the interband absorption transitions of QDs have been observed by using PV spectrum, which clearly exhibits four well-resolved excitonic absorption peaks. The absorption line shape is Gaussian-like. Furthermore, the corresponding excitonic transitions are also observed in PR experiment at 77 K. The first derivative of a Gaussian profile can fit the experimental data well. (C) 1998 American Institute of Physics. [S0003-6951(98)00743-8]

稀土铁双核配合物的合成

本文通过LnCl_3·nTHF和[C_5H_4(SiMe_3)]Na反应得到了两类配合物[C_5H_4(SiMe_3)] LnCl_2·nTHF (Ln = Nd，Sm，Gd；n = 0，1，2)、[C_5H_4(SiMe_3)] LnCl_2·HCl·nTHF (Ln = Nd，Sm，Gd；n = 1，2)。通过元素分析、红外分析、质谱、核磁共振和热重分析确定了配合物的分子组成，特别是带氯化氢的产品在红外光谱中有1250 cm~(-1)，835 cm~(-1)，748 cm~(-1)自的三甲基硅基特征吸收峰。对氯化稀上进行了结构分析，结果发现LnCl_3·4THF (Ln = Sm，Gd)是与NdCl_3·4THF之间存在着变态关系。GdCl_3·4THF。晶体属单斜晶系，空间群为P21/C，晶胞参数为a = 30.765(7)，b = 8.219(3)，C = 17.534(3)A~·，β = 93.71(2)°；SmCl_3·4THF。晶体属单斜晶系，空间群为P21/C，晶胞参数为a = 30.921(13)，b = 8.287(7)，C = 17.665(8)，β = 94.17(4)°。LnCl_3·4THF的单位晶胞中存在着八个分子，每对分子互相等同，但每对分子内部两个分子之间互不等同。SmCl_3·2THF·DME晶体属单斜晶系，空间群为P21/a，晶胞参数为a = 13.547(8)，b = 8.607(4)，C = 16.029(9)A°，β = 90.53(5)°。铲原子与三个氯原子。两个四氢呋喃中的氧原子以及DME中的两个氧原子键合，形成七配位的配合物，但是配位多面体不是理想的五角双锥，而是形成了比五角双锥(D_(5h))对称性更低的多面体(C_(3v))。它能看作是在正八面体的一个面的中心加上第七个原子的结果，而且这八面体主要受到决定上述那个面的三个原子伸展开的畸变。在制备C_5H_5SiMe_3时，如果不用减压蒸馏，而在常压下直接蒸馏，则得到的不是C_5H_5SiMe_3而是它的二聚体(C_5H_5SiMe_3)_2。用红外光谱和核磁共振确定了它的组成和结构，特别是在1650 cm~(-1)处出现(C_5H_5SiMe_3)_2的孤立双键吸收峰。用C_5H_5SiMe_3和Ee(CO)_5回流反应制得了[C_5H_4(SiMe_3) Ee(CO)_2]_2。经过元素分析，红外光谱，质谱，顺磁共振确定了配合物的组成，红外光谱中有桥羰基的吸收峰，质谱图中498的离子峰的出现标志着上述二聚体的存在。用[C_5H_5Fe(CO)_2]_2作为制备双金属配合物的原料，用Na/Hg并还原[C_5H_5Fe(CO)_2]_2。反应时间为6-7小时得到中间体[C_5H_5Fe(CO)_2]_2Na·4THF的深紫红色晶体。反应时间加长，中间体被破坏，反应到15小时时生成了[C_5H_5Fe(CO)_2]Na·TMEDA的黄色晶体，特别是中间体的获得及晶体结构的测定对我们解释反应的机理非常重要。[C_5H_5Fe(CO)_2]_2Na·4THF为单斜晶系，空间群为P21/n，晶胞参数为a = 10.155(5)，b = 17.121(4)，C = 18.667(6)A°，β = 97.61(3)°，V = 3216.9A°~3， 2 = 4。铁的配位数为七，钠的配位数为六，钠离子和桥连羰基氧以配位键结合，每个钠离子连结着两个[C_5H_5Fe(CO)_2]_2~-，而每个[C_5H_5Fe(CO)_2]_2~-又连结着两个钠离子，组成一个无限链状分子，键状分子间以Van de W力结合。[C_5H_5Fe(CO)_2]Na·TMEDA正交晶系，空间群为P_(2,2,2,)。晶胞参数为a = 6.001(4)，b = 10.644(6)，C = 24.214(11)A~·。α = β = r = 90°。z = 4 V = 1546·7A°~3，铁的配位数为五。钠的配位数为四，钠离子和羰基氧以配位键结合，每个钠离子连结着两个[C_5H_5Fe(CO)_2]~-，每个[C_5H_5Fe(CO)_2]~-又连结着两个钠离子，体系就是以这种连结方式或正负电荷交替的形式无限螺旋分子，每个链节存在着两个[C_5H_5Fe(CO)_2]Na·TMEDA分子，链节的长度为a轴的轴长，说明螺旋分子以a轴轴长向上平移。用LnCl_3·nTHF和[C_5H_5Fe(CO)_2]Na反应制得了[C_5H_5Fe(CO)_2] LnCl_2·nTHF (Ln = Nd, Sm, Gd; n = 1, 2)，用[C_5H_5Fe(CO)_2] LnCl_2和[C_5H_4(SiMe_3)]Na或用[C_5H-4(SiMe_3)] LnCl_2和[C_5H_5Fe(CO)_2]Na得到[C_5H_5Fe(CO)_2] [C_5H_4(SiMe_3)] LnCl·nTHF (Ln = Nd, Sm, Gd; n = 0, 1, 3)，配合物[C_5H_5Fe(CO)_2] LnCl_2·nTHF及[C_5H_5Fe(CO)_2] [C_5H_4(SiMe_3)] LnCl·nTHF中存在着2000 cm~(-1)左右的终端羰基吸收峰及1766 cm~(-1)左右的桥连羰基吸收峰。说明稀土和铁之间是以羰基相连的。在TOTOE质谱仪上，配合物[C_5H_5Fe(CO)_2]Gd~·Cl·THF出现[C_5H_5Fe(CO)]GdCl_2、[Fe(CO)_2] Gd~+Cl_2的离子峰，配合物[C_5H_5Fe(CO)_2]-[C_5H_4(SiMe_3)] GdCl·THF出现[C_5H_5Fe(CO)_2] [C_5H_4]Gd~+Cl、[C_5H_5Fe(CO)_2]Gd~+Cl·[C_5H_4C(SiMe_3)] Gd~+Cl等离子峰。所有稀土有机配合物都溶于四氢呋喃、苯，对空气和水敏感。

基于Vif-APOBEC3G相互作用的抗HIV-1药物研究

载脂蛋白B mRNA编辑酶催化多肽样蛋白3G(apolipoprotein B mRNA-editing enzyme catalyticpolypeptidelike3G,APOBEC3G或A3G)是人体天然抗病毒分子,可以使病毒逆转录形成的cDNA的胞嘧啶(C)脱氨为尿嘧啶(U),产生鸟嘌呤(G)→腺嘌呤(A)超突变,导致病毒转录产物突变,从而达到抑制病毒复制的作用。HIV-1的辅助蛋白Vif,可与APOBEC3G相互作用并导致其被降解,使得这一天然抗病毒机制失效,进而增强了HIV的感染力。Vif与APOBEC3G这种相互作用为抗HIV药物提供了新靶点。针对Vif-APOBEC3G相互作用的抗HIV抑制剂已经成为研究热点。本文综述了Vif和APOBEC3G的结构、二者的相互作用,以及基于这一相互作用的抗HIV-1抑制剂研究进展。

HIV抗原抗体联合检测试剂盒适用于体外病毒感染p24抗原检测

比较Vironostika HIV UniformⅡAg/Ab抗原抗体联合检测试剂盒、Vironostika HIV-1 p24抗原检测试剂盒和自制p24单克隆抗体在实验室检测不同HIV毒株体外细胞感染复制的灵敏度。比较3种检测方法在抗HIV药物筛选研究中的应用。方法：HIV抗原抗体联合检测试剂盒和p24抗原检测试剂盒检测严格按说明书操作。自制p24单克隆抗体检测HIV-1 p24抗原采用Fc抗体捕捉双抗夹心法。结果: 3种检测方法检测病毒谱相同，p24抗原检测试剂盒灵敏度最高，HIV抗原抗体联合检测试剂盒其次，自制p24抗原检测法灵敏度最低。检测抗HIV药物AZT 和 IDV抑制病毒复制的剂量曲线，HIV抗原抗体联合检测试剂盒与自制p24抗原检测法均可呈现很好的“S”型剂量曲线，检测IC50一致。HIV抗原抗体联合检测试剂盒灵敏度比自制p24抗原检测法高20倍。p24抗原检测试剂盒灵敏度高但检测范围窄(5-80pg/mL)，导致剂量曲线不明显。 结论: HIV抗原抗体联合检测试剂盒适用于实验室体外病毒感染复制的p24抗原检测。

First principles study of N-N split interstitial in GaN nanowires

Atomic and electronic properties of N-N split interstitial in GaN nanowires have been investigated using first principles calculations. The formation energy calculations show that the N-N interstitial favors substituting an N atom at the surface of the nanowires. The interstitial induces localized states in the band gap of GaN nanowires.

Charge Separation in Wurtzite/Zinc-Blende Heterojunction GaN Nanowires

The electronic properties of wurtzite/zinc-blende (WZ/ZB) heterojunction GaN are investigated using first-principles methods. A small component of ZB stacking formed along the growth direction in the WZ GaN nanowires does not show a significant effect on the electronic property, whereas a charge separation of electrons and holes occurs along the directions perpendicular to the growth direction in the ZB stacking. The later case provides an efficient way to separate the charge through controlling crystal structure. These results have significant implications for most state of the art excitonic solar cells and the tuning region in tunable laser diodes.

基于人工神经网络的区域水环境承载力评价模型及其应用

在分析水环境承载力概念及人工神经网络技术基础之上,从阈值角度出发,建立了基于人工神经网络的区域水环境承载力评价模型,并将其应用于辽宁省水环境承载力评价,通过模型计算得到该省水环境承载能力指数。结果表明,2000—2004年,辽宁省水环境承载能力指数分别为0·29、0·36、0·32、0·37和0·43,整体上呈上升趋势,但承载力依然较弱。本文提出的水环境承载力评价模型具有结构简单、建模方便的特点,评价结果可以直观地反映区域水环境承载状态。

Efficient organic electroluminescent devices based on an organosamarium complex

Several organic electroluminescent devices with different device structures were fabricated based on an organosamarium complex Sm(HFNH)(3)phen[HFNH=4, 4, 5, 5, 6, 6, 6-heptafluoro-l-(2-naphthvl)hexane-1, 3-dione; phen=1, 10-phenanthroline] as emitter. Their electroluminescent properties were investigated in detail. Although the devices with the optimal structure ITO/TPD (50nm)/ Sm(HFNH)(3)phen (xwt%):CBP (50nm)/BCP (20nm)/AIQ (30nm)/LiF (1 nm),/Al (200nm) show high brightness (more than 400cd/m(2)) and high current efficiency (about 1 cd/A), there are emissions from CBP, BCP and even from AIQ existing in the electroluminescence (EL) spectra besides emission from Sm(HFNH)(3)Phen. The reason to this was discussed. The device with the structure ITO/TPD (50 nm)/ Sm(HFNH)(3)phen (50 nm)/AIQ (30 nm)/LiF (1 nm)/Al (200 nm) exhibits the maximum brightness of 118 cd/m(2) and current efficiency of 0.029 cd/A, and shows emissions from AIQ and Sm(HFNH)(3)phen at high voltages. However, with the BCP hole-block layer added, the device [ITO/TPD (50 nm)/Sm(HFNH)(3)phen (50 nm)/BCP (20 nm)/AIQ (30 nm)/LiF (1 nm)/Al (200 nm)] exhibits pure Sm3+ emission in 2 the EL spectra even at high voltages, with the maximum current efficiency of 0.29cd/A and brightness of 82cd/m(2)

(η~5-C_9H_7)_2Yb(THF)_2的晶体结构

双(茚基)镱(Ⅱ)四氢呋喃配合物(η~5-C_9H_7)_2Yb(THF)_2的晶体属单斜晶系,C_c空间群,晶体学参数a=13.506(4),b=11.081(2),c=15.577(5),β=92.68(3)°,V=2329(1),D_c=1.56g/cm~3,Z=4,μ=42.4cm~(-1),F(000)=1088,最终编离因子R=0.029,R_w=0.031。中心离子Yb~(2+)与两个茚基以η~5形式成键且与两个四氢呋喃中的氧成键,茚基的两个质心和四氢呋喃中的两个氧形成扭曲的四面体,Yb~(2+)在四面体的中心。Yb~(2+)的配位数为8。Yb~(2+)到质心In1的距离为2.52,到质心In2的距离为2.40。Yb~(2+)到O(1)的键长为2.356(7),到O(2)的键长为2.417(5)。