20种鲤科鱼类同工酶的表型分析及有关进化问题的探讨

本文对20种鲤科鱼类的同工酶表型进行了分析比较。鲌亚科中存在几种不同的LDH同工酶表型,以各种LDH同工酶表型所组成的一些类群,反映出亚科水平中属间的亲缘关系。按同工酶的表型可将它们分为4个类群,这些类群的划分和进化趋异的过程是与经典的系统分类相一致的。按LDH同工酶表型的异同可将鲌亚科、密鲴亚科和鲢亚科的鱼类划分成两个主要的支系。一支鱼类是具有相同迁移率的LDH-A-4 同工酶,其中包括鲌亚科的多数鱼类,由LDH 同工酶的表型推断它们与雅罗鱼亚科有较密切的亲缘关系;另一支鱼类则是具有相同迁移率的 LDH

Growing 20 cm Long DWNTs/TWNTs at a Rapid Growth Rate of 80-90 mu m/s

Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-04-13T16:03:37Z No. of bitstreams: 1 Growing 20 cm Long DWNTsTWNTs at a Rapid Growth Rate of 80-90 mu ms .pdf: 3229914 bytes, checksum: 0259795afb443dc6901c11df5ecd325a (MD5)

Mode characteristics of semiconductor equilateral triangle microcavities with side length of 5-20 mu m

Semiconductor equilateral triangle microresonators (ETRs) with side length of 5, 10, and 20 mum are fabricated by the two-step inductively coupled plasma (ICP) etching technique. The mode properties of fabricated InGaAsP ETRs are investigated experimentally by photoluminescence (PL) with the pumping source of a 980-nm semiconductor laser and distinct peaks are observed in the measured PL spectra. The wavelength spacings of the distinct peaks agree very well with the theoretical longitudinal mode intervals of the fundamental transverse modes in the ETRs, which verifies that the distinct peaks are corresponding to the enhancement of resonant modes. The mode quality factors are calculated from the width of the resonant peaks of the PL spectra, which are about 100 for the ETR with side length of 20 mum.

Selective and lithography-independent fabrication of 20 nm nano-gap electrodes and nano-channels for nanoelectrofluidics applications

A new method has been developed to selectively fabricate nano-gap electrodes and nano-channels by conventional lithography. Based on a sacrificial spacer process, we have successfully obtained sub-100-nm nano-gap electrodes and nano-channels and further reduced the dimensions to 20 nm by shrinking the sacrificial spacer size. Our method shows good selectivity between nano-gap electrodes and nano-channels due to different sacrificial spacer etch conditions. There is no length limit for the nano-gap electrode and the nano-channel. The method reported in this paper also allows for wafer scale fabrication, high throughput, low cost, and good compatibility with modern semiconductor technology.

A 20.1 W Solid-State Laser Pumped by 887 nm with High Efficiency and TEM00 Mode

High efficiency, TEM00 mode, high repetition rate laser pumped by 887 nm is reported. 20.1 W output laser emitting at 1064 nm is achieved in a 0.3 at % Nd-doped Nd:YVO4, which absorbs pumping light of 30.7 W at 887 nm. The opto-optic efficiency and the slope efficiency are 65.5 and 88.5%, respectively. The stable Q-switching operation worked well at 100 kHz and the beam quality is near diffraction-limit with M-2 factor measured as M-2 approximate to 1.2. And the pulse waveform is analyzed in this paper.

A面(11-20)ZnO薄膜中杂质的偏振PL谱研究

本文通过分析A面(11-20)ZnO薄膜的低温PL(光致发光)光谱偏振特性来研究ZnO光致发光谱中杂质峰的来源.低温(4 K)下观察到476、479 nm两处新的杂质峰以及390 nm处激子峰,根据两个杂质峰的偏振特性,初步判定476nm峰来源于氧空位能级到价带轻空穴的跃迁,479 nm峰来源于氧空位价带重空穴的跃迁.

All-Optical Clock Recovery for 20 Gb/s Using an Amplified Feedback DFB Laser

We report all optical clock recovery based on a monolithic integrated four-section amplified feedback semiconductor laser (AFL), with the different sections integrated based on the quantum well intermixing (QWI) technique. The beat frequency of an AFL is continuously tunable in the range of 19.8-26.3 GHz with an extinction ratio above 8 dB, and the 3-dB linewidth is close to 3 MHz. All-optical clock recovery for 20 Gb/s was demonstrated experimentally using the AFL, with a time jitter of 123.9 fs. Degraded signal clock recovery was also successfully demonstrated using both the dispersion and polarization mode dispersion (PMD) degraded signals separately.