Raman spectroscopy of apatite irradiated with swift heavy ions with and without simultaneous exertion of high pressure

Durango apatite was irradiated with energetic U ions of 2.64 GeV and Kr ions of 2.1 GeV, with and without simultaneous exposure to a pressure of 10.5 GPa. Analysis by confocal Raman spectroscopy gives evidence of vibrational changes being marginal for fluences below 5x10(11) ions/cm(2) but becoming dominant when increasing the fluence to 8x10(12) ions/cm(2). Samples irradiated with U ions experience severe strain resulting in crystal cracking and finally breakage at high fluences. These radiation effects are directly linked to the formation of amorphous tracks and the fraction of amorphized material increasing with fluence. Raman spectroscopy of pressurized irradiated samples shows small shifts of the band positions with decreasing pressure but without a significant change of the Gruneisen parameter. Compared to irradiations at ambient conditions, the Raman spectra of apatite irradiated at 10.5 GPa exhibit fewer modifications, suggesting a higher radiation stability of the lattice by the pressure applied.

Raman investigation of ion-implanted ZnO films

ZnO thin films were implanted at room temperature with 80 keV N+ or 400 keV Xe+ ions. The implantation fluences of N+ and Xe+ ranged from 5.0 x 10(14) to 1.0 x 10(17)/cm(2), and from 2.0 x 10(14) to 5.0 x 10(15)/cm(2), respectively. The samples were analyzed using Raman spectroscopy and the Raman scattering modes of the N- and Xe-ion implanted samples varying with implantation fluences were investigated. It was found that Raman peaks (bands) at 130 and 578 cm(-1) appeared in the spectra of ion-implanted ZnO samples, which are independent of the ion species, whereas a new peak at 274 cm(-1) was found only in N-ion implanted samples, and Raman band at 470 cm(-1) was found clearly in Xe-ion implanted samples. The relative intensity (peak area) increased with the increasing of the implantation fluences. From the comparison of the Raman spectra of N- and Xe-ion implanted ZnO samples and considering the damage induced by the ions, we analyzed the origin of the observed new Raman peaks (bands) and discussed the structure changes of ZnO films induced by N- and Xe-ion implantations.

离子注入ZnO薄膜的拉曼光谱研究；Raman investigation of ion-implanted ZnO films

室温下,用80keVN+和400keVXe+离子注入ZnO薄膜,注入剂量分别为5.0×1014—1.0×1017/cm2和2.0×1014—5.0×1015/cm2.利用拉曼散射技术对注入前后的ZnO薄膜进行光谱测量和分析,研究了样品的拉曼光谱随离子注入剂量的变化规律.实验结果发现,未进行离子注入的样品在99,435cm-1处出现两个ZnO六方纤锌相的特征峰E2low和E2high;N+和Xe+注入样品在130和578cm-1附近均出现新峰(包),N+注入样品还在274cm-1出现新峰,而Xe+注入样品在470cm-1附近出现另一新峰包,且这些新峰(包)的相对面积随注入剂量的增大而增大.通过N+和Xe+注入样品拉曼光谱的对比分析,并考虑到注入离子在样品中产生的原子位移损伤,对新峰(包)对应的振动模来源进行了分析,探索了离子注入在ZnO薄膜中引起的结构变化.

Electrochemical polymerization and characterization of polypyrrole nanowires and nanotubules

Polypyrrole nanostructure arrays, including simultaneously large quantities of nanowires and small quantities of partially filled nanotubules have been electrochemically synthesized in home-made etched ion-track polycarbonate (PC) templates. Diameter of the prepared nanostructures varies from 45 to 320 nm with their lengths up to 30 microns. Morphological studies of these nanostructures were performed by field emission scanning electron microscopy (FESEM), high resolution transmission electron microscopy (HRTEM) and Raman spectroscopy. While optical absorption properties were studied by ultraviolet-visible-near infrared spectrophotometry (UV-vis-NIR). It has been observed that the absorption maximum of polypyrrole shifts to the longer wavelength side as the diameter of these nanostructures (nanowires and nanotubules) increases. (C) 2010 Elsevier B.V. All rights reserved.

薄膜硅材料的重离子辐照改性研究

选择具有重要应用价值的纳米晶硅及非晶硅薄膜材料，对比研究了快重离子辐照薄膜Si材料所引起的辐照效应，主要有如下工作： 1) 用等离子增强化学气相沉积法(PECVD)以及常压化学气相沉积法(APCVD)在玻璃衬底上制备纳米晶硅薄膜(nc-Si)与非晶硅(a-Si)薄膜。制备的nc-Si和a-Si薄膜的厚度分别为∼200 nm和∼400 nm。 2) 室温下，用94 MeV的Xe离子辐照nc-Si和a-Si薄膜以及单晶硅(c-Si，晶向(100)，电阻率0.001 Ω·cm，作为对比样品)，辐照量分别为1.0×1011、1.0×1012 和1.0×1013 ions/cm2。所有样品均在室温下用UV/VIS/NIR光谱仪、Raman谱仪进行检测分析，对比研究纳米晶、非晶、单晶硅样品的光学性能及结构的变化。 3) 通过UV/VIS/NIR谱，我们得到了不同结构硅材料的光学带隙值及折射率随辐照量的变化规律。通过分析硅材料辐照前后Raman谱的变化，讨论了不同晶体结构的影响。 4) 结合UV/VIS/NIR与Raman结果初步讨论了硅材料结构影响辐照效应的机理。对于a-Si薄膜样品，辐照可能引起了样品局域的再结晶。对于nc-Si薄膜样品，Xe离子辐照先引起nc-Si晶粒的破碎，使样品出现非晶化过程，然后再遵从a-Si薄膜样品中离子辐照效应变化规律

UV-B辐射增强对长白山五种藓类植物生长的影响

对生长在中国长白山的5种藓类植物——垂枝藓、拟垂枝藓、塔藓、星塔藓和高山金发藓分别以辐射强度为0.2(自然光照,对照)、3.0(紫外线中等辐射强度)和6.0kJ.m-2.d-1(高剂量辐射强度)的UV-B照射40d后,测定其株高、生物量及叶绿素含量.结果表明:中等和高强度的UV-B辐射使拟垂枝藓和塔藓的株高、生物量和叶绿素含量分别下降了32.3%、62.4%、81.3%和21.4%、59.4%、62.8%,其相对生长速率均为负值;高剂量UV-B辐射处理下垂枝藓的生物量稍有上升,而高山金发藓地下部分的生物量增加1倍,但叶绿素含量变化不明显.高山金发藓和垂枝藓抵抗UV-B辐射的能力较强,拟垂枝藓和塔藓对UV-B辐射较敏感.

UV-B增强对番茄的伤害及H_2O_2的防护作用

UVB辐射使番茄叶片的叶绿素a,叶绿素b及总叶绿素含量先升高后降低,同样使叶片的抗氧化酶过氧化氢酶(CAT)和过氧化物酶(POD)活性先升高随后降低,而使超氧化物歧化酶(SOD)活性升高,膜脂过氧化产物MDA的含量增加;中等剂量(5mmol·l-1)的H2O2预处理能提高叶绿素b的含量,明显提高抗氧化酶的活性,并延缓CAT活性的降低,抑制膜质过氧化产物MDA的产生.中等浓度H2O2预处理能提高番茄对UVB增强的抗性.

不同UV-C辐射时间对豌豆幼苗光合特性及抗氧化酶活性的影响

研究了不同UV-C辐射时间对豌豆幼苗光合特性及抗氧化酶活性的影响。结果表明,UV-C辐射增强使叶片光合速率减弱,气孔导度、胞间CO2浓度、蒸腾速率和羧化效率明显降低,CO2补偿点升高。随着UV-C辐射时间的延长,POD和CAT活性先升高随后降低,SOD活性、叶绿素含量则逐渐降低,但丙二醛含量逐渐增加。这说明UV-C辐射增强引起抗氧化酶活性降低,使膜脂过氧化,导致光合作用减弱。

Structural characteristics and redox behaviors of Ce1-xCuxOy solid solutions

Nanosized Ce1-xCuxOy materials were prepared by complexation-combustion method. The structural characteristics and redox behaviors were investigated using X-ray diffraction (XRD), temperature programmed reduction (H-2-TPR), UV-Vis, and Raman spectroscopies. In XRD patterns, no evidence of CuO diffraction peaks are observed for the Ce1-xCuxOy samples calcinated at 650 degreesC for 5 h, until the Cu/(Ce + Cu) ratio is higher than 0.4. The stepwise decrease of the 2theta value of CeO2 in Ce1-xCuxOy with the increasing of Cu concentration suggests that the CU2+ ions incorporate into the CeO2 lattice to form Ce1-xCuxOy solid solutions for low Cu/(Ce + Cu) ratios (x less than or equal to 0.1). The CuO phase begins to segregate from the solid solutions with the further increasing of Cu/(Ce+Cu) ratio. The Raman mode at 1176 cm(-1) ascribed to the enhanced defects appears for CeO2 and the Ce0.9Cu0.1Oy solid solution. Compared with CeO2 alone, the Raman mode of cubic CeO2 shifts from 462 to 443 cm(-1) for the Ce0.9Cu0.1Oy solid solution. The H-2 consumption of the fresh Ce0.95Cu0.05Oy is 1.65 times higher than that needed to reduce CuO to Cu, and it increases to 2.4 after a reoxidation of the partially reduced Ce0.95Cu0.05Oy at 300 degreesC, which indicates that the CeO2 phase is also extensively reduced. Compared with the high Cu/(Ce+Cu) ratio sample Ce0.7Cu0.3Oy, the Ce0.9Cu0.1Oy solid solution shows high and stable redox property even after different reoxidation temperatures. When the reoxidation temperature exceeds 200 degreesC, the a peak (similar to170 degreesC) ascribed to the reduction of surface oxygen disappears, and the P peak (similar to190 degreesC) ascribed to the reduction of Cu2+ species and the partial reduction of bulk CeO2 shifts to higher temperatures with the H-2 consumption 1.16 times higher than that for fresh sample. The result demonstrates that the redox property of the CeO2 is Significantly improved by forming the Ce1-xCuxOy solid solutions.

Direct determination of sialic acids in serum by capillary electrophoresis with UV detection

A novel method for the determination of N-acetylneuraminic acid (NANA) and N-glycolylneuraminic acid (NGNA) has been developed using high-performance capillary electrophoresis with UV detection at 195 nm, without pre or post-column derivatisation. The acids were separated in a 50-cm, fused-silica capillary (50 mu m i.d, 45.5-cm effective length) with Na2B4O7-Na2HPO4 buffer. The detection limit for NANA is a concentration of 9.6 x 10(-6) M or, in terms of mass: 3.879 x 10(-14) mol (39 fmol). This method is applicable to determination of NANA in normal human serum. The results were also compared with those of the colorimetrie method.