High Characteristic Temperature 1.3 mu m InAs/GaAs Quantum-Dot Lasers Grown by Molecular Beam Epitaxy

We report the molecular beam epitaxy growth of 1.3 mu m InAs/GaAs quantum-dot (QD) lasers with high characteristic temperature T-0. The active region of the lasers consists of five-layer InAs QDs with p-type modulation doping. Devices with a stripe width of 4 mu m and a cavity length of 1200 mu m are fabricated and tested in the pulsed regime under different temperatures. It is found that T-0 of the QD lasers is as high as 532K in the temperature range from 10 degrees C to 60 degrees C. In addition, the aging test for the lasers under continuous wave operation at 100 degrees C for 72 h shows almost no degradation, indicating the high crystal quality of the devices.

Evaluation of thermal radiation dependent performance of GaSb thermophotovoltaic cell based on an analytical absorption coefficient model

Applying the model dielectric function method, we have expressed the absorption coefficient of GaSb analytically at room temperature relating to the contribution of various critical points of its electronic band structure. The calculated absorption spectrum shows good agreement with the reported experimental data obtained by spectral ellipsometry on nominally undoped sample. Based on this analytical absorption spectrum, we have qualitatively evaluated the response of active absorbing layer structure and its photoelectric conversion properties of GaSb thermophotovoltaic device on the perturbation of external thermal radiation induced by the varying radiator temperature or emissivity. Our calculation has demonstrated that desirable thickness to achieve the maximum conversion efficiency should be decreased with the increment of radiator temperature and the performance degradation brought by any structure deviation from its optimal one would be stronger meanwhile. For the popular radiator temperature, no more than 1500 K in a real solar thermophotovoltaic system, and typical doping profile in GaSb cell, a reasonable absorbing layer structure parameter should be controlled within 100-300 nm for the emitter while 3000-5000 nm for the base.

Evaluating 0.53 eVGaInAsSbthermophotovoltaic diode based on an analytical absorption model

Radiant heat conversion performance dominated by the active layer of Ga0.84In0.16As0.14Sb0.86 diode has been systematically investigated based on an analytic absorption spectrum, which is suggested here by numerically fitting the limited experimental data. For the concerned diode configuration, our calculation demonstrates that the optimal base doping is 3-4 x 10(17) cm(-3), which is less sensitive to the variation of the external radiation spectrum. Given the scarcity of the alloy elements, an economical device configuration of the 0.2-0.6 mu m emitter and the 4-6 mu m base would be particularly acceptable because the corresponding conversion efficiency cannot exhibit discouraging degradation in comparison to the one for the optimal structure, the thickness of which may be up to 10 mu m. More importantly, the method we suggested here to calculate alloy absorption can be easily transferred to other composition, thus bringing great convenience for design or optimization of the optoelectronic device formed by these alloys.

Self-consistent analysis of AlSb/InAs high electron mobility transistor structures

The influences of channel layer width, spacer layer width, and delta-doping density on the electron density and its distribution in the AlSb/InAs high electron mobility transistors (HEMTs) have been studied based on the self-consistent calculation of the Schrodinger and Poisson equations with both the strain and nonparabolicity effects being taken into account. The results show that, having little influence on the total two dimensional electron gas (2DEG) concentration in the channel, the HEMT's channel layer width has some influence on the electron mobility, with a channel as narrow as 100-130 angstrom being more beneficial. For the AlSb/InAs HEMT with a Te delta-doped layer, the 2DEG concentration as high as 9.1 X 10(12) cm(-2) can be achieved in the channel by enhancing the delta-doping concentration without the occurrence of the parallel conduction. When utilizing a Si delta-doped InAs layer as the electron-supplying layer of the AlSb/InAs HEMT, the effect of the InAs donor layer thickness is studied on the 2DEG concentration. To obtain a higher 2DEG concentration in the channel, it is necessary to use an InAs donor layer as thin as 4 monolayer. To test the validity of our calculation, we have compared our theoretical results (2DEG concentration and its distribution in different sub-bands of the channel) with the experimental ones done by other groups and show that our theoretical calculation is consistent with the experimental results.

Effect of dopant concentration on photocatalytic activity of TiO2 film doped by Mn non-uniformly

The thin films of TiO2 doped by Mn non-uniformly were prepared by sol-gel method under process control. In our preceding study, we investigated in detail, the effect of doping mode on the photocatalytic activity of TiO2 films showing that Mn non-uniform doping can greatly enhance the activity. In this study we looked at the effect of doping concentration on the photocatalytic activity of the TiO2 films. In this paper, the thin films were characterized by UV-vis spectrophotometer and electrochemical workstation. The activity of the photocatalyst was also evaluated by photocatalytic degradation rate of aqueous methyl orange under UV radiation. The results illustrate that the TiO2 thin film doped by Mn non-uniformly at the optimal dopant concentration (0.7 at %) is of the highest activity, and on the contrary, the activity of those doped uniformly is decreased. As a comparison, in 80 min, the degradation rate of methyl orange is 62 %, 12 % and 34 % for Mn non-uniform doping film (0.7 at %), the uniform doping film (0.7 at %) and pure titanium dioxide film, respectively. We have seen that, for the doping and the pure TiO2 films, the stronger signals of open circuit potential and transient photocurrent, the better photocatalytic activity. We also discusse the effect of dopant concentration on the photocatalytic activity of the TiO2 films in terms of effective separation of the photon-generated carriers in the semiconductor. (C) Versita Warsaw and Springer-Verlag Berlin Heidelberg. All rights reserved.

Preparation and luminescence properties of Eu2+ in SiO2 xerogels

Al-doped and B, Al co-doped SiO2 xerogels with Eu2+ ions were prepared only by sol-gel reaction in air without reducing heat-treatment or post-doping. The luminescence characteristics and mechanism of europium doping SiO2 xerogels were studied as a function of the concentration of Al, B, the europium concentration and the host composition. The emission spectra of the Al-doped and B, Al codoped samples all show an efficient emission broad band in the blue violet range. The blue emission of the Al-doped sample was centered at 437 nm, whereas the B, Al co-doped xerogel emission maximum shifted to 423 nm and the intensity became weaker. Concentration quenching effect occurred in both the Al-doped and B, Al co-doped samples, which probably is the result of the transfer of the excitation energy from Eu2+ ions to defects. The highest Eu2+ emission intensity was observed for samples with the Si(OC2H5)(4):C2H5OH:H2O molar ratio of 1:2:4. (c) 2006 Elsevier B.V. All rights reserved.

Fluorescence pH probe based on microstructured polymer optical fiber

A kind of optical pH sensor was demonstrated that is based on a pH-sensitive fluorescence dye-doped (eosin) cellulose acetate (CA) thin-film modified microstructured polymer optical fiber (MPOF). It was obtained by directly inhaling an eosin-CA-acetic acid mixed solution into array holes in a MPOF and then removing the solvent (acetic acid). The sensing film showed different fluorescence intensities to different pH solutions in a pH range of 2.5-4.5. Furthermore, the pH response range could be tailored through doping a surfactant, hexadecyl trimethyl ammonium bromide (CTAB), in the sensing film. (c) 2007 Optical Society of America.

All-optical switching application of germano-silicate optical fiber incorporated with Ag nanocrystals

银纳米晶体掺杂的高非线性石英光纤的全光转换应用

TCNQ电荷转移配合物薄膜的制备和表征

TCNQ电荷转移配合物作为一种新型有机材料具有很多特殊的物理、化学性质，由于它在材料研究方面的特殊贡献而成为研究热点。本论文在此领域的主要研究内容如下： 1. C18TCNQ和TMB电荷转移配合物LB膜的制备和表征 利用LB技术制备了TMB•C18TCNQ LB膜，与LB-Doping法相比省略了电子给体的液相掺杂步骤，简单、易行。研究结果表明，与TMB•C18TCNQ LB-Doping膜比较，LB膜的结构和表面形貌都发生了很大变化，LB膜中TMB和C18TCNQ的环面分别垂直于基底表面，脂肪烃链有向垂直于基底表面方向变化的趋势，5层LB膜的表面形貌是由许多堆积在一起的六边形片状微晶组成。所以，通过选择制备方法获得具有不同结构的配合物薄膜是可能的。 2. TMB•TCNQ和硬脂酸混合LB膜的制备和表征 利用LB技术组装了TMB•TCNQ和硬脂酸的混合LB膜。研究发现：本身没有两亲性的TMB•TCNQ可以通过硬脂酸的夹带作用转移到基底上。混合LB膜中硬脂酸与TMB•TCNQ是物理混合，很容易被除去，而且，可以根据实际应用需要来决定混合LB膜中硬脂酸的比例。 3. TMB•TCNQ和硬脂酸混合LB膜的热稳定性研究 利用变温红外光谱研究TMB•TCNQ和硬脂酸的混合LB膜的热稳定性。结果显示，混合LB膜中硬脂酸相变发生70-72 oC，TMB•TCNQ在142-144 oC发生反掺杂（分解）。 4. TCNQ和TMB电荷转移配合物自组装膜的制备和表征 利用layer-by-layer法制备了TMB•TCNQ自组装膜。结果表明，通过三氯锗丙酸的中介作用成功地将TMB和TCNQ组装到基底上并形成电荷转移配合物，电荷转移度约为0.48。 5. 利用红外光谱研究硬脂酸镉LB膜的亚晶胞堆积类型 利用红外光谱研究了沉积在CaF2基底上的1，3，5，7-层硬脂酸镉（CdSt）LB膜的亚晶胞堆积形式，以及交替沉积LB膜中氘代硬脂酸镉（d-CdSt）LB膜对1，2，3-层硬脂酸镉LB膜的亚晶胞堆积的影响。结果表明：1-层CdSt LB膜的亚晶胞是六方堆积，而厚度超过3层的CdSt LB膜的亚晶胞是正交堆积。只有相同种类的CdSt LB膜层与层之间的相互作用才会影响碳氢长链的堆积形式，而不同种类的CdSt LB膜和d-CdSt LB膜之间的相互作用不会影响碳氢长链的堆积形式，不论这种作用是亲水头基之间的还是疏水长链之间的。 6. 近红外光谱分辨率对定量分析的影响 利用近红外光谱分析方法建立了多组分混合物中对乙酰氨基苯酚和乙水杨胺的定量分析模型。研究发现，光谱分辨率对定量分析模型有重要影响，针对具体样品的特定组分，需要选择合适的光谱分辨率，进而获得最佳的定量分析结果。

复合氟化物的合成及掺杂稀土离子的光谱性质

本论文通过水热、溶剂热、高温固相以及单晶生长法合成了复合氟化物及部分稀土离子激活的氧化物。运用近年来兴起的温和水热和溶剂热法探索了MAIF5（M＝Ca、Sr、Ba）和LIMAIFa（M＝Ca、Sr）系列复合氟化物的合成条件。以水作为溶剂，合成了CaAIF、SrAIF、BaA作ICaAIF6和L诏rAI凡化合物，从起始反应物、反应温度、反应时间及酸度儿方面考察了几种化合物的合成条件。对于溶剂热反应，选择了五种不同的溶剂作为反应介质，分别为乙二醇、乙醇、甲苯、毗咙、四氢「臾喃。以乙二醇和甲苯为溶剂，可以合成SrAlF5和LiSrAlF6民复合氟化物，而乙醇、毗咙、四氢「归喃作为反应介质没有得到l；l标产物。在五种汽半剂中均不能合成CoAIF6、BaAlF5和LiCaAlF6复合氟化物。通过水热、高温固相以及单晶生民法介成了KMgF3:Eu体系。水热合成的产，物具有氧含员低、物相纯等优点，同时该伙合成的多移，体存在史多的色心。比较三种方法合成的KMgFa:EU的光谱，发现水热和单晶样品中除了6P7/2→8S7/2的线发则外，还明显出现址火峰位置位于420nm处的带发射。结合退火实验，相刃刁又热样品的带发射是由于色心所致，而单晶样l界，的带峰则源于晶体中存在的色心、和少量氧所致，但以色心为主。在高温样品中，只有特征的线发射，没有观察到类似的带发射。结合退火前后线带发射弧度的变化及色心激发谱和翻”．6P7/2-8S7/2发射潜的乘补程度，得出Eu3+→色心的能址传递。通过高温固相反应合成Gd，Eu单掺、双掺的KMgFa、BaLiF3、BaY2F8三种磷光体，考察了Gd2+，Eu2+的光学性质，发现了双掺体系中（Gd3+→Eu2+的能里传递以生象，分析了能墩传递方式，并计算了前两个体系中Gd3+→Eu2+能最传递儿率。考察了Pr内+ 在KMgF2、LiYF4、BaY2F8基质中的光谱情况，指认了发射峰所对应的跃迁光潜项，具体讨论了KMgFa:Pr3+激发潜中352nm处的宽带激发峰。考察了Pr3+的发射弧度在KMg1-xCaxF3体系中的咨隋况，发现随枷含嫩的增加，Pr3+的在各发射区的发射强度显著增弧，分析了可能的原因。此外本论文也通过旋转试域熔融法生长了Ca2MgSi2O2单晶，详细讨论了生长品体的彩响因索，并以该化合物为纂质，考察了Eu的掺杂行为。在空气氛围下，没有发生Eu3+→Eu2+的还原，而是形成Ca2Eu8Si6O26化合物，这借助X-ray粉末衍射、组分分析及光谱分析得到证实。

DETERMINATION OF THE SUBBAND ENERGY IN THE V-SHAPED POTENTIAL WELL OF DELTA-DOPED GAAS BY DEEP-LEVEL TRANSIENT SPECTROSCOPY

Using deep level transient spectroscopy (DLTS) the conduction-subband energy levels in a V-shaped potential well induced by Si-delta doping in GaAs were determined. Self-consistent calculation gives four subbands in the well below the Fermi level. Experimentally, two DLTS peaks due to electron emission from these subbands were observed. Another two subbands with low electron concentration are believed to be merged into the adjacent DLTS peak. A good agreement between self-consistent calculation and experiment was obtained. (C) 1994 American Institute of Physics.

TEMPERATURE EFFECT ON POROUS SILICON LUMINESCENCE

A theoretical surface-state model of porous-silicon luminescence is proposed. The temperature effect on the PhotoLuminescence (PL) spectrum for pillar and spherical structures is considered, and it is found that the effect is dependent on the doping concentration, the excitation strength, and the shape and dimensions of the Si microstructure. The doping concentration has an effect on the PL intensity at high temperatures and the excitation strength has an effect on the PL intensity at low temperaturs. The variations of the PL intensity with temperature are different for the pillar and spherical structures. At low temperatures the PL intensity increases in the pillar structure, while in the spherical structure the PL intensity decreases as the temperature increases, at high temperatures the PL intensities have a maximum for both models. The temperature, at which the PL intensity reaches its maximum, depends on the doping concentration. The PL spectrum has a broader peak structure in the spherical structure than in the pillar structure. The theoretical results are in agreement with experimental results.

RADIATIVE RECOMBINATION IN N-TYPE AND P-TYPE GAAS COMPENSATED WITH LI

We report fundamental changes of the radiative recombination in a wide range of n-type and p-type GaAs after diffusion with the group-I element Li. These optical properties are found to be a bulk property and closely related to the electrical conductivity of the samples. In the Li-doped samples the radiative recombination is characterized by emissions with excitation-dependent peak positions which shift to lower energies with increasing degree of compensation and concentration of Li. These properties are shown to be in qualitative agreement with fluctuations of the electrostatic potential in strongly compensated systems. For Li-diffusion temperatures above 700-800-degrees-C semi-insulating conditions with electrical resistivity exceeding 10(7) OMEGA cm are obtained for all conducting starting materials. In this heavy Li-doping regime, the simple model of fluctuating potentials is shown to be inadequate for explaining the. experimental observations unless the number of charged impurities is reduced through complexing with Li. For samples doped with low concentrations of Li, on the other hand, the photoluminescence properties are found to be characteristic of impurity-related emissions.

LITHIUM PASSIVATION OF ZN AND CD ACCEPTORS IN P-TYPE GAAS

We report lithium passivation of the shallow acceptors Zn and Cd in p-type GaAs which we attribute to the formation of neutral Li-Zn and Li-Cd complexes. Similar to hydrogen, another group-I element, lithium strongly reduces the concentration of free holes when introduced into p-type GaAs. The passivation is inferred from an increase of both the hole mobility and the resisitivity throughout the bulk of the sample. It is observed most clearly for Li concentrations comparable to the shallow-acceptor concentration. In addition, compensation of shallow acceptors by randomly distributed donors is present in varying degree in the Li-diffused samples. Unlike hydrogenation of n-type GaAs, Li doping shows no evidence of neutralizing shallow donors in GaAs.

SELF-CONSISTENT TREATMENT OF 3-DIMENSIONAL - 2-DIMENSIONAL AND 2-DIMENSIONAL - 2-DIMENSIONAL RESONANT-TUNNELING IN DOUBLE-BARRIER STRUCTURES

By using a transfer-matrix method on the basis of two-dimensional (2D) Bloch sums in accordance with a tight-binding scheme, a self-consistent calculation on the resonant tunneling in asymmetric double-barrier structures is presented, in which contributions to resonant tunneling from both three-dimensional (3D) electrons in the contacts and 2D electrons in the spacer or accumulation layers are considered simultaneously. The charge buildup effect on the current versus voltage (I-V) curves is evaluated systematically, showing quantitatively how it results in the I-V bistability and enhanced differences between I-V curves for positive and negative bias in an asymmetric double-barrier structure. Special attention is focused on the interaction between 3D-2D and 2D-2D resonant-tunneling processes, including the suppression of 2D-2D resonant tunneling by the charge buildup in the well accompanying the 3D-2D resonant tunneling. The effects of the emitter doping condition (doping concentration, spacer thickness) on the presence of two types of quasi-2D levels in the emitter accumulation layers, and on the formation of a potential bulge in the emitter region, are discussed in detail in relation to the tunneling process.