268 resultados para contact epitaxy


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The fabrication of organic semiconductor thin films is extremely important in organic electronic devices. This tutorial review-which should particularly appeal to chemists and physicists interested in organic thin-film growth, organic electronic devices and organic semiconductor materials-summarizes the method of weak epitaxy growth (WEG) and its application in the fabrication of high quality organic semiconductor thin films.

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Weak epitaxy growth (WEG) behavior and mechanism of copper hexadecafluorophthalocyanine (F16CuPc) on p-sexiphenyl (p-6P) monolayer film were investigated by atomic force microscopy (AFM), selected area electron diffraction (SEAD), and wide-angle X-ray diffraction (WAXD). High-quality F16CuPc films with high order, large size, and molecular-level smoothness were obtained successfully by WEG method. It was identified that there exists incommensurate epitaxial relation between highly oriented F16CuPc and p-6P films. The geometrical channels of p-6P monolayer surface induce the nucleation and growth of F16CuPc molecules.

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A dense clad overlay with chemical inertness was achieved on top of the plasma-sprayed YSZ thermal barrier coatings by laser in order to protect them from hot-corrosion attack. The Al2O3-clad YSZ coating exhibited good hot-corrosion behavior in contact with salt mixture of vanadium pentoxide (V2O5) and sodium sulfate (Na2SO4) for a longtime of 100 h at 1173 K. The LaPO4-clad YSZ coating showed corrosion resistance inferior to the Al2O3-clad one. Yttria was leached from YSZ by reaction between Y2O3 and V2O5, which caused progressive destabilization transformation of YSZ from tetragonal (t) to monoclinic (m) phase. The chemical inertness of the clad layers and the restrained infiltration of the molten corrosive salts by the dense clad layers were primary contributions to improvement of the hot-corrosion resistances.

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Thin films of phthalocyanine compounds show weak epitaxial growth on a monodomain film of a rod-like molecule (see figure). The resulting organic electronic devices exhibit high charge carrier mobilities close to those of the single-crystal devices.

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An organic thin-film transistor (OTFT) having a low-dielectric polymer layer between gate insulator and source/drain electrodes is investigated. Copper phthalocyanine (CuPc), a well-known organic semiconductor, is used as an active layer to test performance of the device. Compared with bottom-contact devices, leakage current is reduced by roughly one order of magnitude, and on-state current is enhanced by almost one order of magnitude. The performance of the device is almost the same as that of a top-contact device. The low-dielectric polymer may play two roles to improve OTFT performance. One is that this structure influences electric-field distribution between source/drain electrodes and semiconductor and enhances charge injection. The other is that the polymer influences growth behavior of CuPc thin films and enhances physical connection between source/drain electrodes and semiconductor channel. Advantages of the OTFT having bottom-contact structure make it useful for integrated plastic electronic devices.

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An interesting interface structure between diamond film and silicon substrate has been observed. That is, according to the deformation of the diamond film crystal sturcture, a strictly 3:2 matching of the two lattices across the interface is obtained. This result clearly indicates that misfit dislocations at the interface and "epitaxial tilting" are not the only two ways to overcome the 1.5% residual misfit.

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Crystallization behavior of syndiotactic polypropylene(sPP) on the (100) lattice plane of high-density polyethylene(HDPE) crystals was studied by means of transmission electron microscopy and electron diffraction. The results indicate that sPP crystals can grow epitaxially on the (100) PE lattice plane with their chain directions +/-37 degrees apart from the chain direction of the HDPE substrate. The contact planes are (100) lattice planes for both polymers. This kind of epitaxy is explained in terms of parallel alignment of HDPE chains along the rows formed by the {CH3, CH2,CH3} groups in the (100) lattice plane of the sPP crystals. This implies that in the epitaxial crystallization of sPP with fiber oriented HDPE substrate, not only the (110) but also the (100) HDPE lattice planes can act as the oriented nucleation sites. Furthermore, according to the poor matching between HDPE chains in the (100) lattice plane and the {CH3, CH2, CH3} group rows in the (100) lattice plane of the sPP crystals, it is concluded that the geometric matching is not the only controlling factor for the occurrence of polymer epitaxy.

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The contact angles theta of polar liquids on PP-g-AM copolymer (AM content 0.19, 0.26, and 0.37 wt%) were measured. The critical surface tension gamma(c) of PP-g-AM films were evaluated by the Zisman plot (cos theta versus gamma(L)), the Young-Dupre-Good-Girifalco plot (1 + cos theta) versus 1/gamma(L)(0.5), and the log(1 + cos theta) versus log gamma(L) plot. The gamma(L) values estimated by the plot log(1 + cos theta) versus log gamma(L) were smaller than those obtained by the other plots.

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The contact angles theta of some liquids on ethylene-propylene copolymer-grafted-glycidyl methacrylate (EPM-g-GMA) were measured. The critical surface tensions r(c) of EPM-g-GMA were evaluated by the Zisman Plot (cos theta versus r(L)), Young-Dupre-Good-Girifalco plot (1 + cos theta versus 1/r(L)(0.5)) and log (1 + cos theta) versus log(r(L)) plot. The following results were obtained: the r(c) values varied significantly with the estimation methods. The critical surface tension r(c) decreased with the increase of the degree of grafting of EPM-g-GMA.

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The effective thermal conductivity of graded composites with contact resistance on the inclusion surface is investigated. As an example, we have considered the graded composite media with a spherical particle embedded in a homogeneous matrix, where the thermal conductivity of spherical inclusion is an exponential function k(i) = c exp(betar) (where r is the inside distance of a point in particle from the center of the spherical particle in a spherical coordinate). For both heat contact resistance and perfect contact cases, we have given a reasonable effective medium approximation to calculate the effective conductivity. (C) 2003 Elsevier B.V. All rights reserved.

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The perturbation expansion method is used to find the effective thermal conductivity of graded nonlinear composites having thermal contact resistance on the inclusion surface. As an example, we have studied the graded composites with cylindrical inclusions immersed in a homogeneous matrix. The thermal conductivity of the cylindrical inclusion is assumed to have a power-law profile of the radial distance r measured from its origin. For weakly nonlinear constitutive relations between the heat flow density q and the temperature field T, namely, q = -mu del T - chi vertical bar del T vertical bar(2) del T, in both the inclusion and the matrix regions, we have derived the temperature distributions using the perturbation expansion method. A nonlinear effective medium approximation of graded composites is proposed to estimate the effective linear and nonlinear thermal conductivities. by considering the temperature singularity on the inclusion surface due to the heat contact resistance. (c) 2006 Elsevier B.V. All rights reserved.